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公开(公告)号:US20180233383A1
公开(公告)日:2018-08-16
申请号:US15703630
申请日:2017-09-13
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Hiroaki ASHIDATE , Hiroyasu Iimori , Katsuhiro Sato
IPC: H01L21/67 , H01L21/311
CPC classification number: H01L21/6708 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/31111 , H01L21/67086 , H01L21/67253
Abstract: According to an embodiment, a substrate treatment apparatus includes a tank and a control mechanism. The tank houses a substrate including a silicon oxide film and a silicon nitride film, and receives a supply of a phosphoric acid solution capable of selectively etching the silicon nitride film rather than the silicon oxide film. The control mechanism controls an etching state of the silicon nitride film in the tank, by alternately switching two modes based on preset time allocation. The two modes include a first mode in which a first phosphoric acid solution is contact with the substrate and a second mode in which a second phosphoric acid solution with a selection ratio of the silicon nitride film to the silicon oxide film different from that of the first phosphoric acid solution, is contact with the substrate.
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公开(公告)号:US20190214277A1
公开(公告)日:2019-07-11
申请号:US16357151
申请日:2019-03-18
Applicant: Toshiba Memory Corporation
Inventor: Yoshihiro Uozumi , Shinsuke Kimura , Yoshihiro Ogawa , Hiroyasu Iimori , Tatsuhiko Koide , Hideaki Hirabayashi , Yuji Nagashima
IPC: H01L21/67 , G03F7/40 , G03F7/16 , H01L21/68 , H01L21/677
CPC classification number: H01L21/67075 , G03F7/162 , G03F7/405 , H01L21/67017 , H01L21/67028 , H01L21/67051 , H01L21/67098 , H01L21/6715 , H01L21/67739 , H01L21/68
Abstract: According to one embodiment, a substrate processing method is disclosed. The method can include treating a substrate with a first liquid. The substrate has a structural body formed on a major surface of the substrate. The method can include forming a support member supporting the structural body by bringing a second liquid into contact with the substrate wetted by the first liquid, and changing at least a portion of the second liquid into a solid by carrying out at least one of causing the second liquid to react, reducing a quantity of a solvent included in the second liquid, and causing at least a portion of a substance dissolved in the second liquid to be separated. The method can include removing the support member by changing at least a part of the support member from a solid phase to a gaseous phase, without passing through a liquid phase.
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公开(公告)号:US10290490B2
公开(公告)日:2019-05-14
申请号:US15239243
申请日:2016-08-17
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Tomohiko Sugita , Hiroyasu Iimori , Yoshihiro Ogawa
Abstract: In one embodiment, a dust collecting apparatus includes a container configured to contain a fluid that includes particles to be collected. The apparatus further includes one or more sound sources configured to generate, in the container, a standing sound wave including at least one node to trap the particles in a vicinity of the node. The one or more sound sources are configured to generate the standing sound wave so that the node does not contact a wall face of the container or contacts a predetermined portion of the wall face of the container. The predetermined portion is formed of a member that prevents the particles from leaving from the node located in a vicinity of the predetermined portion.
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公开(公告)号:US10199209B2
公开(公告)日:2019-02-05
申请号:US14986977
申请日:2016-01-04
Applicant: Toshiba Memory Corporation
Inventor: Tomohiko Sugita , Katsuhiro Sato , Hiroyasu Iimori , Yoshihiro Ogawa
Abstract: In one embodiment, a substrate treatment apparatus includes cleaning and rinse modules configured to clean and rinse a surface of a substrate provided with a pattern, and a solidifying agent containing liquid supplying module configured to supply a solidifying agent containing liquid that contains a solidifying agent to the cleaned and rinsed surface of the substrate. The apparatus further includes a precipitation module configured to precipitate the solidifying agent as solid on the surface of the substrate, and a decomposition module configured to decompose and gasify the solid to remove the solid from the surface of the substrate. The solidifying agent contains an ammonium salt, and the ammonium salt contains an ammonium ion or an ion having a structure in which at least one of four hydrogen atoms of an ammonium ion is substituted with another atom or atom group.
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公开(公告)号:US10453729B2
公开(公告)日:2019-10-22
申请号:US15915559
申请日:2018-03-08
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Tatsuhiko Koide , Hiroyasu Iimori , Shinsuke Kimura
IPC: H01L21/68 , H01L21/673 , H01L21/02 , H01L21/67 , H01L21/677
Abstract: According to an embodiment, a substrate treatment apparatus includes a support unit, a silane coupler supplier, an organic functional group remover, and a drive mechanism. The support supports a substrate having a patterned film. The silane coupler supplier supplies the film with a silane coupler. The organic functional group remover removes an organic functional group from the film silylated with the silane coupler. The drive mechanism drives at least one of the support, the silane coupler supplier, and the organic functional group remover in such a way that the supply of the silane coupler and the supply of light or gas are repeated by a predetermined number.
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公开(公告)号:US20190080947A1
公开(公告)日:2019-03-14
申请号:US15915559
申请日:2018-03-08
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Tatsuhiko Koide , Hiroyasu Iimori , Shinsuke Kimura
IPC: H01L21/68 , H01L21/673 , H01L21/677 , H01L21/67 , H01L21/02
CPC classification number: H01L21/68 , H01L21/02164 , H01L21/02282 , H01L21/02348 , H01L21/67028 , H01L21/67051 , H01L21/67115 , H01L21/67379 , H01L21/67383 , H01L21/67706 , H01L21/6776
Abstract: According to an embodiment, a substrate treatment apparatus includes a support unit, a silane coupler supplier, an organic functional group remover, and a drive mechanism. The support supports a substrate having a patterned film. The silane coupler supplier supplies the film with a silane coupler. The organic functional group remover removes an organic functional group from the film silylated with the silane coupler. The drive mechanism drives at least one of the support, the silane coupler supplier, and the organic functional group remover in such a way that the supply of the silane coupler and the supply of light or gas are repeated by a predetermined number.
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