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公开(公告)号:US20180076186A1
公开(公告)日:2018-03-15
申请号:US15822039
申请日:2017-11-24
Applicant: Toshiba Memory Corporation
Inventor: Hayato MASUBUCHI , Naoki Kimura , Manabu Matsumoto , Toyota Morimoto
IPC: H01L25/18 , H05K1/02 , H05K3/30 , H01L23/528 , H01L23/498 , H01L25/00 , H01L27/115
CPC classification number: H01L25/18 , G11C5/02 , H01L23/3121 , H01L23/3142 , H01L23/49822 , H01L23/49838 , H01L23/5286 , H01L23/552 , H01L23/562 , H01L25/0655 , H01L25/50 , H01L27/115 , H01L2924/0002 , H05K1/0225 , H05K1/0271 , H05K1/0298 , H05K1/181 , H05K3/305 , H05K2201/09136 , H05K2201/09681 , H05K2201/10159 , Y02P70/613 , H01L2924/00
Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.
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公开(公告)号:US09754632B2
公开(公告)日:2017-09-05
申请号:US15254825
申请日:2016-09-01
Applicant: Toshiba Memory Corporation
Inventor: Hayato Masubuchi , Naoki Kimura , Manabu Matsumoto , Toyota Morimoto
IPC: G11C5/02 , H05K3/30 , H01L23/498 , H01L27/115 , H01L23/552 , H01L23/00 , H01L25/065 , H05K1/18 , H01L23/31 , H05K1/02
CPC classification number: H01L25/18 , G11C5/02 , H01L23/3121 , H01L23/3142 , H01L23/49822 , H01L23/49838 , H01L23/5286 , H01L23/552 , H01L23/562 , H01L25/0655 , H01L25/50 , H01L27/115 , H01L2924/0002 , H05K1/0225 , H05K1/0271 , H05K1/0298 , H05K1/181 , H05K3/305 , H05K2201/09136 , H05K2201/09681 , H05K2201/10159 , Y02P70/613 , H01L2924/00
Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.
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公开(公告)号:US10388640B2
公开(公告)日:2019-08-20
申请号:US15822039
申请日:2017-11-24
Applicant: Toshiba Memory Corporation
Inventor: Hayato Masubuchi , Naoki Kimura , Manabu Matsumoto , Toyota Morimoto
IPC: G11C5/02 , H01L25/18 , H05K1/02 , H05K3/30 , H01L23/498 , H01L27/115 , H01L23/31 , H01L23/552 , H01L23/00 , H01L25/065 , H05K1/18 , H01L23/528 , H01L25/00
Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.
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公开(公告)号:US11063031B2
公开(公告)日:2021-07-13
申请号:US16800398
申请日:2020-02-25
Applicant: Toshiba Memory Corporation
Inventor: Hayato Masubuchi , Naoki Kimura , Manabu Matsumoto , Toyota Morimoto
IPC: G11C5/06 , H01L25/18 , H05K1/02 , H05K3/30 , H01L23/498 , H01L27/115 , G11C5/02 , H01L23/31 , H01L23/552 , H01L23/00 , H01L25/065 , H05K1/18 , H01L23/528 , H01L25/00
Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.
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公开(公告)号:US10607979B2
公开(公告)日:2020-03-31
申请号:US16502288
申请日:2019-07-03
Applicant: Toshiba Memory Corporation
Inventor: Hayato Masubuchi , Naoki Kimura , Manabu Matsumoto , Toyota Morimoto
IPC: G11C5/06 , H01L25/18 , H05K1/02 , H05K3/30 , H01L23/498 , H01L27/115 , G11C5/02 , H01L23/31 , H01L23/552 , H01L23/00 , H01L25/065 , H05K1/18 , H01L23/528 , H01L25/00
Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.
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公开(公告)号:US09859264B2
公开(公告)日:2018-01-02
申请号:US15378947
申请日:2016-12-14
Applicant: Toshiba Memory Corporation
Inventor: Hayato Masubuchi , Naoki Kimura , Manabu Matsumoto , Toyota Morimoto
IPC: G11C5/06 , H01L25/18 , H01L23/498 , H01L27/115 , H01L25/00 , H01L23/528 , H05K1/02 , H05K3/30
CPC classification number: H01L25/18 , G11C5/02 , H01L23/3121 , H01L23/3142 , H01L23/49822 , H01L23/49838 , H01L23/5286 , H01L23/552 , H01L23/562 , H01L25/0655 , H01L25/50 , H01L27/115 , H01L2924/0002 , H05K1/0225 , H05K1/0271 , H05K1/0298 , H05K1/181 , H05K3/305 , H05K2201/09136 , H05K2201/09681 , H05K2201/10159 , Y02P70/613 , H01L2924/00
Abstract: According to one embodiment, a semiconductor memory system includes a substrate, a plurality of elements and an adhesive portion. The substrate has a multilayer structure in which wiring patterns are formed, and has a substantially rectangle shape in a planar view. The elements are provided and arranged along the long-side direction of a surface layer side of the substrate. The adhesive portion is filled in a gap between the elements and in a gap between the elements and the substrate, where surfaces of the elements are exposed.
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