公开(公告)号：US07135773B2

公开(公告)日：2006-11-14

申请号：US10787640

申请日：2004-02-26

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  David Vaclav Horak ,  Charles William Koburger, III ,  Mark Eliot Masters ,  Peter H. Mitchell ,  Stanislav Polonsky

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  David Vaclav Horak ,  Charles William Koburger, III ,  Mark Eliot Masters ,  Peter H. Mitchell ,  Stanislav Polonsky

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： B82Y10/00 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/842 ,  H01L2924/00

摘要： Conductive paths in an integrated circuit are formed using multiple undifferentiated carbon nanotubes embedded in a conductive metal, which is preferably copper. Preferably, conductive paths include vias running between conductive layers. Preferably, composite vias are formed by forming a metal catalyst pad on a conductor at the via site, depositing and etching a dielectric layer to form a cavity, growing substantially parallel carbon nanotubes on the catalyst in the cavity, and filling the remaining voids in the cavity with copper. The next conductive layer is then formed over the via hole.

摘要翻译： 集成电路中的导电路径使用嵌入导电金属中的多个未分化碳纳米管形成，优选为铜。 优选地，导电路径包括在导电层之间运行的通孔。 优选地，通过在通孔位置的导体上形成金属催化剂垫，沉积和蚀刻介电层以形成空腔，在空腔中的催化剂上基本上平行地生长碳纳米管，并填充其中的剩余空隙来形成复合通孔 有铜的腔。 然后在通孔上形成下一导电层。

公开(公告)号：US07473633B2

公开(公告)日：2009-01-06

申请号：US11458726

申请日：2006-07-20

申请人： Toshiharu Furukawa ,  Mark Charles Hakey ,  David Vaclav Horak ,  Charles William Koburger, III ,  Mark Eliot Masters ,  Peter H Mitchell ,  Stanislav Polonsky

发明人： Toshiharu Furukawa ,  Mark Charles Hakey ,  David Vaclav Horak ,  Charles William Koburger, III ,  Mark Eliot Masters ,  Peter H Mitchell ,  Stanislav Polonsky

IPC分类号： H01L21/4763

CPC分类号： B82Y10/00 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/842 ,  H01L2924/00

摘要： Conductive paths in an integrated circuit are formed using multiple undifferentiated carbon nanotubes embedded in a conductive metal, which is preferably copper. Preferably, conductive paths include vias running between conductive layers. Preferably, composite vias are formed by forming a metal catalyst pad on a conductor at the via site, depositing and etching a dielectric layer to form a cavity, growing substantially parallel carbon nanotubes on the catalyst in the cavity, and filling the remaining voids in the cavity with copper. The next conductive layer is then formed over the via hole.

摘要翻译： 集成电路中的导电路径使用嵌入导电金属中的多个未分化碳纳米管形成，优选为铜。 优选地，导电路径包括在导电层之间延伸的通孔。 优选地，通过在通孔位置的导体上形成金属催化剂垫，沉积和蚀刻介电层以形成空腔，在空腔中的催化剂上基本上平行地生长碳纳米管，并填充其中的剩余空隙来形成复合通孔 有铜的腔。 然后在通孔上形成下一导电层。

公开(公告)号：US20060292861A1

公开(公告)日：2006-12-28

申请号：US11458726

申请日：2006-07-20

申请人： Toshiharu Furukawa ,  Mark Hakey ,  David Horak ,  Charles Koburger ,  Mark Masters ,  Peter Mitchell ,  Stanislav Polonsky

发明人： Toshiharu Furukawa ,  Mark Hakey ,  David Horak ,  Charles Koburger ,  Mark Masters ,  Peter Mitchell ,  Stanislav Polonsky

IPC分类号： H01L21/4763

CPC分类号： B82Y10/00 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/842 ,  H01L2924/00

摘要： Conductive paths in an integrated circuit are formed using multiple undifferentiated carbon nanotubes embedded in a conductive metal, which is preferably copper. Preferably, conductive paths include vias running between conductive layers. Preferably, composite vias are formed by forming a metal catalyst pad on a conductor at the via site, depositing and etching a dielectric layer to form a cavity, growing substantially parallel carbon nanotubes on the catalyst in the cavity, and filling the remaining voids in the cavity with copper. The next conductive layer is then formed over the via hole.

摘要翻译： 集成电路中的导电路径使用嵌入导电金属中的多个未分化碳纳米管形成，优选为铜。 优选地，导电路径包括在导电层之间运行的通孔。 优选地，通过在通孔位置的导体上形成金属催化剂垫，沉积和蚀刻介电层以形成空腔，在空腔中的催化剂上基本上平行地生长碳纳米管，并填充其中的剩余空隙来形成复合通孔 有铜的腔。 然后在通孔上形成下一导电层。

公开(公告)号：US20050189655A1

公开(公告)日：2005-09-01

申请号：US10787640

申请日：2004-02-26

申请人： Toshiharu Furukawa ,  Mark Hakey ,  David Horak ,  Charles Koburger ,  Mark Masters ,  Peter Mitchell ,  Stanislav Polonsky

发明人： Toshiharu Furukawa ,  Mark Hakey ,  David Horak ,  Charles Koburger ,  Mark Masters ,  Peter Mitchell ,  Stanislav Polonsky

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L23/522 ,  H01L23/48

CPC分类号： B82Y10/00 ,  H01L21/28562 ,  H01L21/76877 ,  H01L23/5226 ,  H01L2221/1094 ,  H01L2924/0002 ,  Y10S977/742 ,  Y10S977/842 ,  H01L2924/00

摘要： Conductive paths in an integrated circuit are formed using multiple undifferentiated carbon nanotubes embedded in a conductive metal, which is preferably copper. Preferably, conductive paths include vias running between conductive layers. Preferably, composite vias are formed by forming a metal catalyst pad on a conductor at the via site, depositing and etching a dielectric layer to form a cavity, growing substantially parallel carbon nanotubes on the catalyst in the cavity, and filling the remaining voids in the cavity with copper. The next conductive layer is then formed over the via hole.

摘要翻译： 集成电路中的导电路径使用嵌入导电金属中的多个未分化碳纳米管形成，优选为铜。 优选地，导电路径包括在导电层之间延伸的通孔。 优选地，通过在通孔位置的导体上形成金属催化剂垫，沉积和蚀刻介电层以形成空腔，在空腔中的催化剂上基本上平行地生长碳纳米管，并填充其中的剩余空隙来形成复合通孔 有铜的腔。 然后在通孔上形成下一导电层。

公开(公告)号：US09453831B2

公开(公告)日：2016-09-27

申请号：US13452857

申请日：2012-04-21

申请人： Stanislav Polonsky ,  Ali Afzali-Ardakani ,  Hongbo Peng ,  Gustavo A. Stolovitzky ,  Ajay A. Royyuru ,  Mark N. Wegman

发明人： Stanislav Polonsky ,  Ali Afzali-Ardakani ,  Hongbo Peng ,  Gustavo A. Stolovitzky ,  Ajay A. Royyuru ,  Mark N. Wegman

IPC分类号： G01N33/487 ,  G01N33/543

CPC分类号： G01N33/48721 ,  G01N33/54373

摘要： A nanopore capture system may include a material configured to pass through a nanopore device in a controlled manner based upon its interaction with the nanopore device. The system may also include a capture mechanism connected to one end of the material. The capture mechanism may be configured to catch a particular type of molecule while ignoring other types of molecules. The system may also include a controller to manipulate and/or detect the particular type of molecule.

公开(公告)号：US08641879B2

公开(公告)日：2014-02-04

申请号：US13611662

申请日：2012-09-12

申请人： Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen M. Rossnagel ,  Ajay K. Royyuru ,  Gustavo A. Stolovitzky ,  George F. Walker

发明人： Stefan Harrer ,  Binquan Luan ,  Glenn J. Martyna ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen M. Rossnagel ,  Ajay K. Royyuru ,  Gustavo A. Stolovitzky ,  George F. Walker

IPC分类号： G01N27/26

CPC分类号： B82Y15/00 ,  C12Q1/6869 ,  C12Q2565/631

摘要： A technique for controlling the motion of one or more charged entities linked to a polymer through a nanochannel is provided. A first reservoir and a second reservoir are connected by the nanochannel. An array of electrodes is positioned along the nanochannel, where fluid fills the first reservoir, the second reservoir, and the nanochannel. A first electrode is in the first reservoir and a second electrode is in the second reservoir. The first and second electrodes are configured to direct the one or more charged entities linked to the polymer into the nanochannel. An array of electrodes is configured to trap the one or more charged entities in the nanochannel responsive to being controlled for trapping. The array of electrodes is configured to move the one or more charged entities along the nanochannel responsive to being controlled for moving.

公开(公告)号：US08598018B2

公开(公告)日：2013-12-03

申请号：US12820487

申请日：2010-06-22

申请人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

发明人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/283

CPC分类号： C23C8/02 ,  C23C8/36 ,  C23C14/5853 ,  G01N33/48721

摘要： The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.

摘要翻译： 本发明提供一种在其表面上形成具有降低的腐蚀和水分解的电极的方法。 导电层沉积在基底上。 导电层被氧等离子体工艺部分地氧化，将其一部分转化成氧化层，从而形成电极。 氧化物层没有表面缺陷，氧化物层的厚度为约0.09nm至约10nm，并且其间的范围可以0.2nm精度控制。

公开(公告)号：US08189931B2

公开(公告)日：2012-05-29

申请号：US11969451

申请日：2008-01-04

申请人： Tien Huynh ,  Stanislav Polonsky ,  Isidore Rigoutsos

发明人： Tien Huynh ,  Stanislav Polonsky ,  Isidore Rigoutsos

IPC分类号： G06K9/00 ,  G06F17/30

CPC分类号： G06F17/30985

摘要： A method and system are disclosed for matching input character sequences in a set of input patterns. The method comprises the steps of analyzing the set of input patterns, creating a pattern cluster look-up table (PCLT) based on said input patterns, and defining an offset value k. The PCLT is used to find, for each sequence s and offset k, a set of candidate patterns that can possibly match s, the set of candidate patterns is searched for patterns that match s, and all found matching patterns and sequences are reported.

摘要翻译： 公开了一种用于在一组输入模式中匹配输入字符序列的方法和系统。 该方法包括以下步骤：分析输入模式集，基于所述输入模式创建模式集群查找表（PCLT），并定义偏移值k。 PCLT用于针对每个序列s和偏移k找到一组可能匹配s的候选模式，搜索匹配s的模式的候选模式集合，并且报告所有找到的匹配模式和序列。

公开(公告)号：US20120065765A1

公开(公告)日：2012-03-15

申请号：US12881548

申请日：2010-09-14

申请人： IBRAHIM M. ELFADEL ,  Ying Liu ,  Stanislav Polonsky ,  Amith Singhee

发明人： IBRAHIM M. ELFADEL ,  Ying Liu ,  Stanislav Polonsky ,  Amith Singhee

IPC分类号： G06F19/00

CPC分类号： G03F7/705 ,  G03F7/70658

摘要： A method, system, and computer usable program product for detecting dose and focus variations during photolithography are provided in the illustrative embodiments. A test shape is formed on a wafer, the wafer being used to manufacture integrated circuits, the test shape being formed using a dose value and a focus value that are predetermined for the manufacturing. A capacitance of the test shape is measured. The capacitance is resolved to a second dosing value and a second focus value using an extraction model. A difference between the dosing value and the second dosing value is computed. A recommendation is made for dosing adjustment in the manufacturing based on the difference.

摘要翻译： 在说明性实施例中提供了用于在光刻期间检测剂量和聚焦变化的方法，系统和计算机可用程序产品。 在晶片上形成测试形状，该晶片用于制造集成电路，该测试形状使用为制造预定的剂量值和聚焦值形成。 测量测试形状的电容。 使用提取模型将电容解析为第二计量值和第二焦点值。 计算给药值和第二给药值之间的差异。 基于差异，建议制造中的剂量调整。

公开(公告)号：US20110312164A1

公开(公告)日：2011-12-22

申请号：US12820487

申请日：2010-06-22

申请人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

发明人： Ali Afzali-Azdakani ,  Shafaat Ahmed ,  Hariklia Deligianni ,  Dario L. Goldfarb ,  Stefan Harrer ,  Hongbo Peng ,  Stanislav Polonsky ,  Stephen Rossnagel ,  Xiaoyan Shao ,  Gustavo A. Stolovitzky

IPC分类号： H01L21/20 ,  H01L21/36 ,  C23C14/34 ,  G03F7/20 ,  C30B23/02 ,  C30B25/02 ,  C23C28/00 ,  B05D3/06 ,  C23C14/08

CPC分类号： C23C8/02 ,  C23C8/36 ,  C23C14/5853 ,  G01N33/48721

摘要： The present invention provides a method of forming an electrode having reduced corrosion and water decomposition on a surface thereof. A conductive layer is deposited on a substrate. The conductive layer is partially oxidized by an oxygen plasma process to convert a portion thereof to an oxide layer thereby forming the electrode. The oxide layer is free of surface defects and the thickness of the oxide layer is from about 0.09 nm to about 10 nm and ranges therebetween, controllable with 0.2 nm precision.

摘要翻译： 本发明提供一种在其表面上形成具有降低的腐蚀和水分解的电极的方法。 导电层沉积在基底上。 导电层被氧等离子体工艺部分地氧化，将其一部分转化成氧化层，从而形成电极。 氧化物层没有表面缺陷，氧化物层的厚度为约0.09nm至约10nm，并且其间的范围可以0.2nm精度控制。