公开(公告)号：US20120111427A1

公开(公告)日：2012-05-10

申请号：US13061356

申请日：2009-08-27

申请人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

发明人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

IPC分类号： F16K15/00 ,  B08B5/00

CPC分类号： C23C16/4412 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862 ,  Y10T137/7837

摘要： A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path.

摘要翻译： 等离子体处理装置设置有从排气孔向下延伸的第一排气路径; 第二排气通道，其沿着排气方向连接到第一排气通路的下游端部，并且沿与第一排气通路延伸的方向垂直的方向延伸，其横截面与排气通道 方向为水平长，使得宽度方向长度大于横截面中的垂直长度; 第三排气路径，其沿排气方向连接到第二排气路径的下游端部，并且沿与第二排气通路延伸的方向垂直的方向延伸; 泵，其在排气方向上连接到第三排气路径的下游端部，并且减压处理容器的内部; 设置在第二排气路径中的压力控制阀，包括能够关闭第二排气通路并控制排气方向上游侧和下游侧的压力的压力控制阀板; 以及截止阀，其设置在所述第三排气路径中并且包括打开和关闭所述第三排气路径的截止阀板。

公开(公告)号：US08973527B2

公开(公告)日：2015-03-10

申请号：US13061356

申请日：2009-08-27

申请人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

发明人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/52 ,  H01J37/32 ,  C23C16/44 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4412 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862 ,  Y10T137/7837

摘要： A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path.

摘要翻译： 等离子体处理装置设置有从排气孔向下延伸的第一排气路径; 第二排气通道，其沿着排气方向连接到第一排气通路的下游端部，并且沿与第一排气通路延伸的方向垂直的方向延伸，其横截面与排气通道 方向为水平长，使得宽度方向长度大于横截面中的垂直长度; 第三排气路径，其沿排气方向连接到第二排气路径的下游端部，并且沿与第二排气通路延伸的方向垂直的方向延伸; 泵，其在排气方向上连接到第三排气路径的下游端部，并且减压处理容器的内部; 设置在第二排气路径中的压力控制阀，包括能够关闭第二排气通路并控制排气方向上游侧和下游侧的压力的压力控制阀板; 以及截止阀，其设置在所述第三排气路径中并且包括打开和关闭所述第三排气路径的截止阀板。

公开(公告)号：US20090194238A1

公开(公告)日：2009-08-06

申请号：US12361066

申请日：2009-01-28

申请人： Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Shinji Komoto

发明人： Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Shinji Komoto

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01L21/68728 ,  H01L21/68735

摘要： Provided is a plasma processing apparatus capable of easily processing a top surface of a mounting table to have a smooth shape, and also capable of preventing a temperature of a peripheral portion of a substrate from decreasing. A plasma processing apparatus 5 processes a substrate W in a processing vessel 20 by converting a processing gas, which is supplied into the processing vessel 20, into plasma, wherein a mounting table 21 for mounting the substrate W on a top surface thereof is installed in the processing vessel 20, and positioning pins 25 for positioning a peripheral portion of the substrate W are installed to be protruded in plural locations on the top surface of the mounting table 21, and the positioning pins 25 are inserted into recess portions 26 formed in the top surface of the mounting table 21.

摘要翻译： 提供一种等离子体处理装置，其能够容易地将安装台的顶面加工成具有平滑的形状，并且还能够防止基板的周边部分的温度下降。 等离子体处理装置5通过将供给到处理容器20的处理气体转换成等离子体来处理处理容器20中的基板W，其中，安装基板W的顶面的安装台21安装在 处理容器20和用于定位基板W的周边部分的定位销25安装成在安装台21的上表面上的多个位置突出，并且定位销25插入形成在安装台21的凹部26中。 安装台21的顶面。

公开(公告)号：US08091863B2

公开(公告)日：2012-01-10

申请号：US12401076

申请日：2009-03-10

申请人： Shinji Komoto ,  Toshihisa Nozawa

发明人： Shinji Komoto ,  Toshihisa Nozawa

IPC分类号： F16K1/16

CPC分类号： H01L21/67126 ,  Y10S251/90 ,  Y10S414/135

摘要： A gate valve of a semiconductor manufacturing apparatus, which is formed between a processing chamber in which processing is performed and a transfer chamber which carries a substrate on which the processing is performed, includes a gate valve at a side of the processing chamber; a sealing member which is formed in the gate valve at the side of the processing chamber; a gate valve at the side of the transfer chamber; a sealing member which is formed in the gate valve at the side of the transfer chamber; and a thermal insulator which is formed between the gate valve at the side of the processing chamber and the gate valve at the side of the transfer chamber.

摘要翻译： 半导体制造装置的闸阀形成在执行处理的处理室和承载执行了处理的基板的传送室之间，包括处理室侧的闸阀; 密封构件，其形成在处理室侧的闸阀中; 在转移室一侧的闸阀; 密封构件，其形成在所述输送室侧的所述闸阀中; 以及形成在处理室侧的闸阀与传送室一侧的闸阀之间的绝热体。

公开(公告)号：US08419859B2

公开(公告)日：2013-04-16

申请号：US12528734

申请日：2008-02-18

申请人： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

发明人： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

IPC分类号： B08B7/00

CPC分类号： C23C16/52 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32862

摘要： A method of cleaning a plasma processing apparatus for processing a target in a process container, which is vacuum-evacuatable, using plasma, includes performing a first cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a first pressure, and performing a second cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a second pressure that is higher than the first pressure. Accordingly, the plasma processing apparatus can be efficiently and rapidly cleaned without damaging at least one of the group consisting of inner surfaces of the process container and members in the process container.

摘要翻译： 一种清洗等离子体处理装置，用于使用等离子体进行真空抽真空处理的处理容器中的目标物的方法包括：通过向处理容器提供清洁气体以产生等离子体并将压力保持在 处理容器，并且通过向处理容器中提供清洁气体以产生等离子体并将处理容器中的压力保持在高于第一压力的第二压力下，执行第二清洁处理。 因此，等离子体处理装置可以被有效且快速地清洁，而不会损坏由处理容器的内表面和处理容器中的构件组成的组中的至少一个。

公开(公告)号：US20100175713A1

公开(公告)日：2010-07-15

申请号：US12528734

申请日：2008-02-18

申请人： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

发明人： Noriaki Fukiage ,  Shinji Komoto ,  Hiroyuki Takaba ,  Kiyotaka Ishibashi

IPC分类号： B08B7/00 ,  C23F1/08

CPC分类号： C23C16/52 ,  C23C16/4405 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/32862

摘要： A method of cleaning a plasma processing apparatus for processing a target in a process container, which is vacuum-evacuatable, using plasma, includes performing a first cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a first pressure, and performing a second cleaning process by supplying a cleaning gas into the process container to generate plasma and maintaining the pressure in the process container at a second pressure that is higher than the first pressure. Accordingly, the plasma processing apparatus can be efficiently and rapidly cleaned without damaging at least one of the group consisting of inner surfaces of the process container and members in the process container.

摘要翻译： 一种清洗等离子体处理装置，用于使用等离子体进行真空抽真空处理的处理容器中的目标物的方法包括：通过向处理容器提供清洁气体以产生等离子体并将压力保持在 处理容器，并且通过向处理容器中提供清洁气体以产生等离子体并将处理容器中的压力保持在高于第一压力的第二压力下，执行第二清洁处理。 因此，等离子体处理装置可以被有效且快速地清洁，而不会损坏由处理容器的内表面和处理容器中的构件组成的组中的至少一个。