公开(公告)号：US20120111427A1

公开(公告)日：2012-05-10

申请号：US13061356

申请日：2009-08-27

申请人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

发明人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

IPC分类号： F16K15/00 ,  B08B5/00

CPC分类号： C23C16/4412 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862 ,  Y10T137/7837

摘要： A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path.

摘要翻译： 等离子体处理装置设置有从排气孔向下延伸的第一排气路径; 第二排气通道，其沿着排气方向连接到第一排气通路的下游端部，并且沿与第一排气通路延伸的方向垂直的方向延伸，其横截面与排气通道 方向为水平长，使得宽度方向长度大于横截面中的垂直长度; 第三排气路径，其沿排气方向连接到第二排气路径的下游端部，并且沿与第二排气通路延伸的方向垂直的方向延伸; 泵，其在排气方向上连接到第三排气路径的下游端部，并且减压处理容器的内部; 设置在第二排气路径中的压力控制阀，包括能够关闭第二排气通路并控制排气方向上游侧和下游侧的压力的压力控制阀板; 以及截止阀，其设置在所述第三排气路径中并且包括打开和关闭所述第三排气路径的截止阀板。

公开(公告)号：US08973527B2

公开(公告)日：2015-03-10

申请号：US13061356

申请日：2009-08-27

申请人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

发明人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/52 ,  H01J37/32 ,  C23C16/44 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4412 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862 ,  Y10T137/7837

摘要： A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path.

摘要翻译： 等离子体处理装置设置有从排气孔向下延伸的第一排气路径; 第二排气通道，其沿着排气方向连接到第一排气通路的下游端部，并且沿与第一排气通路延伸的方向垂直的方向延伸，其横截面与排气通道 方向为水平长，使得宽度方向长度大于横截面中的垂直长度; 第三排气路径，其沿排气方向连接到第二排气路径的下游端部，并且沿与第二排气通路延伸的方向垂直的方向延伸; 泵，其在排气方向上连接到第三排气路径的下游端部，并且减压处理容器的内部; 设置在第二排气路径中的压力控制阀，包括能够关闭第二排气通路并控制排气方向上游侧和下游侧的压力的压力控制阀板; 以及截止阀，其设置在所述第三排气路径中并且包括打开和关闭所述第三排气路径的截止阀板。

公开(公告)号：US08967082B2

公开(公告)日：2015-03-03

申请号：US13496540

申请日：2010-09-14

申请人： Masahide Iwasaki ,  Toshihisa Nozawa

发明人： Masahide Iwasaki ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/02 ,  C23C16/455 ,  H01L21/28

CPC分类号： H01L21/02274 ,  C23C16/45517 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/28194

摘要： A plasma processing apparatus 31 includes a processing chamber 32; a gas supply unit 33 for supplying a plasma processing gas into a processing chamber 32; a mounting table 34 configured to hold the target substrate W thereon; a plasma generating device 39 configured to generate plasma within the processing chamber 32; and a gas supply device 61. The gas supply device 61 includes a head unit 62 configured to move between a first position above the mounting table 34 and a second position different from the first position and to supply a gas, and the head unit 62 is configured to supply a film forming gas to a small-volume region formed between the mounting table 34 and the head unit 62 when the head unit 62 is positioned at the first position and to adsorb the film forming gas on the target substrate W.

摘要翻译： 等离子体处理装置31包括处理室32; 用于将等离子体处理气体供给到处理室32中的气体供给单元33; 配置成将目标基板W保持在其上的安装台34; 构造成在处理室32内产生等离子体的等离子体产生装置39; 气体供给装置61.气体供给装置61包括头单元62，其构造成在安装台34上方的第一位置和与第一位置不同的第二位置之间移动并供给气体，头单元62为 构造成当头单元62位于第一位置时，将成膜气体供给到形成在安装台34和头单元62之间的小体积区域，并将成膜气体吸附在目标基板W上。

公开(公告)号：US20120186521A1

公开(公告)日：2012-07-26

申请号：US13496540

申请日：2010-09-14

申请人： Masahide Iwasaki ,  Toshihisa Nozawa

发明人： Masahide Iwasaki ,  Toshihisa Nozawa

IPC分类号： C23C16/50 ,  C23C16/511

CPC分类号： H01L21/02274 ,  C23C16/45517 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/28194

摘要： A plasma processing apparatus 31 includes a processing chamber 32; a gas supply unit 33 for supplying a plasma processing gas into a processing chamber 32; a mounting table 34 configured to hold the target substrate W thereon; a plasma generating device 39 configured to generate plasma within the processing chamber 32; and a gas supply device 61. The gas supply device 61 includes a head unit 62 configured to move between a first position above the mounting table 34 and a second position different from the first position and to supply a gas, and the head unit 62 is configured to supply a film forming gas to a small-volume region formed between the mounting table 34 and the head unit 62 when the head unit 62 is positioned at the first position and to adsorb the film forming gas on the target substrate W.

摘要翻译： 等离子体处理装置31包括处理室32; 用于将等离子体处理气体供给到处理室32中的气体供给单元33; 配置成将目标基板W保持在其上的安装台34; 构造成在处理室32内产生等离子体的等离子体产生装置39; 气体供给装置61.气体供给装置61包括头单元62，其构造成在安装台34上方的第一位置和与第一位置不同的第二位置之间移动并供给气体，头单元62为 构造成当头单元62位于第一位置时，将成膜气体供给到形成在安装台34和头单元62之间的小体积区域，并将成膜气体吸附在目标基板W上。

公开(公告)号：US08815014B2

公开(公告)日：2014-08-26

申请号：US13024328

申请日：2011-02-10

申请人： Jacques Faguet ,  Masahide Iwasaki ,  Toshihisa Nozawa

发明人： Jacques Faguet ,  Masahide Iwasaki ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32623 ,  H05H2245/123

摘要： A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space.

摘要翻译： 描述了在衬底上等离子体辅助薄膜气相沉积的方法和系统。 该系统包括处理室，该处理室包括具有第一体积的第一处理空间，耦合到处理室的衬底台，并被配置为支撑衬底并将衬底暴露于第一处理空间;耦合到处理室的等离子体产生系统，以及 被配置为在所述第一处理空间的至少一部分中产生等离子体，以及耦合到所述处理室并被配置为抽空所述第一处理空间的至少一部分的真空泵送系统。 所述系统还包括处理容积调节机构，其耦合到所述处理室并且被配置为创建包括所述第一处理空间的至少一部分并且具有小于所述第一体积的第二容积的第二处理空间，所述衬底暴露于 第二个处理空间。

公开(公告)号：US20110135842A1

公开(公告)日：2011-06-09

申请号：US13024328

申请日：2011-02-10

申请人： Jacques FAGUET ,  Masahide Iwasaki ,  Toshihisa Nozawa

发明人： Jacques FAGUET ,  Masahide Iwasaki ,  Toshihisa Nozawa

IPC分类号： C23C16/511 ,  C23C16/00 ,  C23C16/455

CPC分类号： C23C16/45502 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/45565 ,  C23C16/45589 ,  C23C16/5096 ,  C23C16/511 ,  H01J37/32082 ,  H01J37/32449 ,  H01J37/32623 ,  H05H2245/123

摘要： A method and system for plasma-assisted thin film vapor deposition on a substrate is described. The system includes a process chamber including a first process space having a first volume, a substrate stage coupled to the process chamber and configured to support a substrate and expose the substrate to the first process space, a plasma generation system coupled to the process chamber and configured to generate plasma in at least a portion of the first process space, and a vacuum pumping system coupled to the process chamber and configured to evacuate at least a portion of the first process space. The system further includes a process volume adjustment mechanism coupled to the process chamber and configured to create a second process space that includes at least a part of the first process space and that has a second volume less than the first volume, the substrate being exposed to the second process space.

摘要翻译： 描述了在衬底上等离子体辅助薄膜气相沉积的方法和系统。 该系统包括处理室，该处理室包括具有第一体积的第一处理空间，耦合到处理室的衬底台，并被配置为支撑衬底并将衬底暴露于第一处理空间;耦合到处理室的等离子体产生系统，以及 被配置为在所述第一处理空间的至少一部分中产生等离子体，以及耦合到所述处理室并被配置为抽空所述第一处理空间的至少一部分的真空泵送系统。 所述系统还包括处理容积调节机构，其耦合到所述处理室并且被配置为创建包括所述第一处理空间的至少一部分并且具有小于所述第一体积的第二容积的第二处理空间，所述衬底暴露于 第二个处理空间。

公开(公告)号：US09691591B2

公开(公告)日：2017-06-27

申请号：US14127286

申请日：2012-06-29

申请人： Masahide Iwasaki

发明人： Masahide Iwasaki

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32

CPC分类号： H01J37/32201 ,  H01J37/32211 ,  H01J37/3222

摘要： The microwave plasma processing apparatus includes a power feeding rod that applies high frequency wave for RF bias, the upper end of which is connected to a susceptor, and the lower end of which is connected to a high frequency output terminal of a matcher in a matching unit; a cylindrical external conductor that encloses around the power feeding rod serving as an internal conductor; and a coaxial line. The coaxial line is installed with a choke mechanism configured to block undesired microwave that enters the line from a plasma producing space in a chamber, and leakage of the microwave to an RF feeding line is prevented in the middle of the line, thereby suppressing the microwave leakage.

公开(公告)号：US09275837B2

公开(公告)日：2016-03-01

申请号：US12951380

申请日：2010-11-22

申请人： Yohei Yamazawa ,  Naoki Matsumoto ,  Masahide Iwasaki ,  Naohiko Okunishi

发明人： Yohei Yamazawa ,  Naoki Matsumoto ,  Masahide Iwasaki ,  Naohiko Okunishi

IPC分类号： H01J37/32 ,  H05H1/46

CPC分类号： H01J37/32174 ,  H01J37/32091 ,  H01J37/32522 ,  H05H1/46

摘要： A parallel resonance frequency can be adjusted in order to stably and securely block different high frequency noises flowing into a line such as a power feed line or a signal line from electric members including a high frequency electrode within a processing chamber. A filter 102(1) coaxially accommodates a coil 104(1) within a cylindrical outer conductor 110, and a ring member 122 is coaxially installed between the coil 104(1) and the outer conductor 110. The ring-shaped member 122 may be a plate body of a circular ring shape on a plane orthogonal to an axial direction of the outer conductor 110 and made of a conductor such as cupper or aluminum and electrically connected with the outer conductor 110 while electrically insulated from the coil 104(1).

摘要翻译： 可以调节并联谐振频率，以便稳定且可靠地阻止流入来自包括处理室内的高频电极的电气部件的馈电线或信号线的线路的不同高频噪声。 过滤器102（1）在圆柱形外部导体110内同轴地容纳线圈104（1），并且环形构件122同轴地安装在线圈104（1）和外部导体110之间。环形构件122可以是 在与外导体110的轴向正交的平面上并且由诸如铜或铝的导体制成并且与外导体110电连接并且与线圈104（1）电绝缘的平板体。

公开(公告)号：US07419567B2

公开(公告)日：2008-09-02

申请号：US11092910

申请日：2005-03-30

申请人： Masahide Iwasaki ,  Koji Miyata

发明人： Masahide Iwasaki ,  Koji Miyata

IPC分类号： H01L21/00 ,  C23C16/00 ,  C23C14/00

CPC分类号： H01J37/32082 ,  H01J37/32623 ,  H01J37/3266

摘要： A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form first, second, and third magnetic fields within the peripheral plasma region. The first magnetic field includes magnetic force lines extending along a vertical first cylindrical plane. The second magnetic field includes magnetic force lines extending along a vertical second cylindrical plane located inside the first cylindrical plane. The third magnetic field includes magnetic force lines extending along vertical radial planes located between the first and second cylindrical planes.

摘要翻译： 等离子体处理装置包括处理室中的工作台，以在其上水平放置目标基板。 在处理室内的工作台上方和周围限定了等离子体产生空间。 等离子体产生空间包括分别位于放置在工作台上的目标基板的外边缘的外侧和内侧的外围等离子体区域和主等离子体区域。 该装置还包括磁场形成机构，其构造成在外围等离子体区域内形成第一，第二和第三磁场。 第一磁场包括沿着垂直的第一圆柱面延伸的磁力线。 第二磁场包括沿位于第一圆柱面内的垂直第二圆柱面延伸的磁力线。 第三磁场包括沿位于第一和第二圆柱形平面之间的垂直径向平面延伸的磁力线。

公开(公告)号：US08182869B2

公开(公告)日：2012-05-22

申请号：US12781527

申请日：2010-05-17

申请人： Masahide Iwasaki

发明人： Masahide Iwasaki

IPC分类号： C23C16/00

CPC分类号： G05D23/1902 ,  H01J37/32724 ,  H01L21/67109 ,  H01L21/67248

摘要： A method for controlling a temperature of a mounting table includes a first and a second temperature control mode in which a first and a second coolant passageway of a coolant circulator are connected in parallel between an output port and a return port of the coolant circulator. The first temperature control mode includes: making a part of a coolant of a reference temperature flow in the first coolant passageway after raising or lowering the temperature thereof to a desired set temperature; and making a residual coolant flow in the second coolant passageway while substantially maintaining the reference temperature thereof. The second temperature control mode includes: making a part of the coolant flow in the first coolant passageway while substantially maintaining the reference temperature thereof; and making a residual coolant flow in the second coolant passageway while substantially maintaining the reference temperature thereof.

摘要翻译： 用于控制安装台的温度的方法包括第一和第二温度控制模式，其中冷却剂循环器的第一和第二冷却剂通道并联连接在冷却剂循环器的输出端口和返回端口之间。 第一温度控制模式包括：在升高或降低其温度至所需设定温度之后，使第一冷却剂通道中参考温度的冷却剂的一部分流动; 并且使第二冷却剂通道中的剩余冷却剂流动基本上保持其基准温度。 第二温度控制模式包括：在基本保持其基准温度的同时使一部分冷却剂流入第一冷却剂通道; 并且使第二冷却剂通道中的剩余冷却剂流动基本上保持其基准温度。