公开(公告)号：US20120111427A1

公开(公告)日：2012-05-10

申请号：US13061356

申请日：2009-08-27

申请人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

发明人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

IPC分类号： F16K15/00 ,  B08B5/00

CPC分类号： C23C16/4412 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862 ,  Y10T137/7837

摘要： A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path.

摘要翻译： 等离子体处理装置设置有从排气孔向下延伸的第一排气路径; 第二排气通道，其沿着排气方向连接到第一排气通路的下游端部，并且沿与第一排气通路延伸的方向垂直的方向延伸，其横截面与排气通道 方向为水平长，使得宽度方向长度大于横截面中的垂直长度; 第三排气路径，其沿排气方向连接到第二排气路径的下游端部，并且沿与第二排气通路延伸的方向垂直的方向延伸; 泵，其在排气方向上连接到第三排气路径的下游端部，并且减压处理容器的内部; 设置在第二排气路径中的压力控制阀，包括能够关闭第二排气通路并控制排气方向上游侧和下游侧的压力的压力控制阀板; 以及截止阀，其设置在所述第三排气路径中并且包括打开和关闭所述第三排气路径的截止阀板。

公开(公告)号：US20090194238A1

公开(公告)日：2009-08-06

申请号：US12361066

申请日：2009-01-28

申请人： Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Shinji Komoto

发明人： Kiyotaka Ishibashi ,  Toshihisa Nozawa ,  Shinya Nishimoto ,  Shinji Komoto

IPC分类号： C23F1/08 ,  C23C16/54

CPC分类号： H01L21/68728 ,  H01L21/68735

摘要： Provided is a plasma processing apparatus capable of easily processing a top surface of a mounting table to have a smooth shape, and also capable of preventing a temperature of a peripheral portion of a substrate from decreasing. A plasma processing apparatus 5 processes a substrate W in a processing vessel 20 by converting a processing gas, which is supplied into the processing vessel 20, into plasma, wherein a mounting table 21 for mounting the substrate W on a top surface thereof is installed in the processing vessel 20, and positioning pins 25 for positioning a peripheral portion of the substrate W are installed to be protruded in plural locations on the top surface of the mounting table 21, and the positioning pins 25 are inserted into recess portions 26 formed in the top surface of the mounting table 21.

摘要翻译： 提供一种等离子体处理装置，其能够容易地将安装台的顶面加工成具有平滑的形状，并且还能够防止基板的周边部分的温度下降。 等离子体处理装置5通过将供给到处理容器20的处理气体转换成等离子体来处理处理容器20中的基板W，其中，安装基板W的顶面的安装台21安装在 处理容器20和用于定位基板W的周边部分的定位销25安装成在安装台21的上表面上的多个位置突出，并且定位销25插入形成在安装台21的凹部26中。 安装台21的顶面。

公开(公告)号：US08973527B2

公开(公告)日：2015-03-10

申请号：US13061356

申请日：2009-08-27

申请人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

发明人： Toshihisa Nozawa ,  Shinji Komoto ,  Masahide Iwasaki

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/52 ,  H01J37/32 ,  C23C16/44 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/4412 ,  C23C16/50 ,  C23C16/511 ,  C23C16/52 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32834 ,  H01J37/32862 ,  Y10T137/7837

摘要： A plasma processing apparatus is provided with a first exhaust path which extends downward from an exhaust hole; a second exhaust path which is connected to a downstream end portion of the first exhaust path in the exhausting direction and extends in a direction perpendicular to a direction in which the first exhaust path extends, and whose cross-section, which orthogonally intersects with the exhausting direction, is horizontally long such that a widthwise length is greater than a vertical length in the cross-section; a third exhaust path which is connected to a downstream end portion of the second exhaust path in the exhausting direction and extends in a direction perpendicular to the direction in which the second exhaust path extends; a pump which is connected to a downstream end portion of the third exhaust path in the exhausting direction and depressurizes an inside of a processing container; a pressure control valve which is provided in the second exhaust path, and comprises a pressure control valve plate which is capable of closing the second exhaust path and controls a pressure at upstream and downstream sides in the exhausting direction; and a shut-off valve which is provided in the third exhaust path and comprises a shut-off valve plate which opens and closes the third exhaust path.

摘要翻译： 等离子体处理装置设置有从排气孔向下延伸的第一排气路径; 第二排气通道，其沿着排气方向连接到第一排气通路的下游端部，并且沿与第一排气通路延伸的方向垂直的方向延伸，其横截面与排气通道 方向为水平长，使得宽度方向长度大于横截面中的垂直长度; 第三排气路径，其沿排气方向连接到第二排气路径的下游端部，并且沿与第二排气通路延伸的方向垂直的方向延伸; 泵，其在排气方向上连接到第三排气路径的下游端部，并且减压处理容器的内部; 设置在第二排气路径中的压力控制阀，包括能够关闭第二排气通路并控制排气方向上游侧和下游侧的压力的压力控制阀板; 以及截止阀，其设置在所述第三排气路径中并且包括打开和关闭所述第三排气路径的截止阀板。

公开(公告)号：US08091863B2

公开(公告)日：2012-01-10

申请号：US12401076

申请日：2009-03-10

申请人： Shinji Komoto ,  Toshihisa Nozawa

发明人： Shinji Komoto ,  Toshihisa Nozawa

IPC分类号： F16K1/16

CPC分类号： H01L21/67126 ,  Y10S251/90 ,  Y10S414/135

摘要： A gate valve of a semiconductor manufacturing apparatus, which is formed between a processing chamber in which processing is performed and a transfer chamber which carries a substrate on which the processing is performed, includes a gate valve at a side of the processing chamber; a sealing member which is formed in the gate valve at the side of the processing chamber; a gate valve at the side of the transfer chamber; a sealing member which is formed in the gate valve at the side of the transfer chamber; and a thermal insulator which is formed between the gate valve at the side of the processing chamber and the gate valve at the side of the transfer chamber.

摘要翻译： 半导体制造装置的闸阀形成在执行处理的处理室和承载执行了处理的基板的传送室之间，包括处理室侧的闸阀; 密封构件，其形成在处理室侧的闸阀中; 在转移室一侧的闸阀; 密封构件，其形成在所述输送室侧的所述闸阀中; 以及形成在处理室侧的闸阀与传送室一侧的闸阀之间的绝热体。

公开(公告)号：US09117764B2

公开(公告)日：2015-08-25

申请号：US13819038

申请日：2011-07-29

申请人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

发明人： Takaaki Matsuoka ,  Toshihisa Nozawa ,  Toshiyasu Hori

IPC分类号： H01L21/302 ,  H01L21/308 ,  H01J37/32 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  G03F7/004 ,  G03F7/075 ,  G03F7/09 ,  G03F7/20

CPC分类号： H01L21/3081 ,  G03F7/0046 ,  G03F7/0752 ,  G03F7/094 ,  G03F7/2041 ,  H01J37/32192 ,  H01L21/0212 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0276 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31122

摘要： A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

摘要翻译： 在作为被处理基板的硅基板上形成氟碳层（步骤A）。 在这样形成的碳氟化合物层上形成抗蚀剂层（步骤B）。 然后，通过使抗蚀剂层通过光致抗蚀剂层曝光（步骤C）将抗蚀剂层图案化为预定的形状。 使用图案化为预定形状的抗蚀剂层作为掩模来蚀刻氟碳层（步骤D）。 接下来，除去作为掩模的抗蚀剂层（步骤E）。 之后，使用残留的氟碳层作为掩模蚀刻硅衬底（步​​骤F）。 由于碳氟化合物层本身作为抗反射膜和危害掩模起作用，所以可以提高处理的可靠性，同时降低成本。

公开(公告)号：US08967082B2

公开(公告)日：2015-03-03

申请号：US13496540

申请日：2010-09-14

申请人： Masahide Iwasaki ,  Toshihisa Nozawa

发明人： Masahide Iwasaki ,  Toshihisa Nozawa

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/02 ,  C23C16/455 ,  H01L21/28

CPC分类号： H01L21/02274 ,  C23C16/45517 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/28194

摘要： A plasma processing apparatus 31 includes a processing chamber 32; a gas supply unit 33 for supplying a plasma processing gas into a processing chamber 32; a mounting table 34 configured to hold the target substrate W thereon; a plasma generating device 39 configured to generate plasma within the processing chamber 32; and a gas supply device 61. The gas supply device 61 includes a head unit 62 configured to move between a first position above the mounting table 34 and a second position different from the first position and to supply a gas, and the head unit 62 is configured to supply a film forming gas to a small-volume region formed between the mounting table 34 and the head unit 62 when the head unit 62 is positioned at the first position and to adsorb the film forming gas on the target substrate W.

摘要翻译： 等离子体处理装置31包括处理室32; 用于将等离子体处理气体供给到处理室32中的气体供给单元33; 配置成将目标基板W保持在其上的安装台34; 构造成在处理室32内产生等离子体的等离子体产生装置39; 气体供给装置61.气体供给装置61包括头单元62，其构造成在安装台34上方的第一位置和与第一位置不同的第二位置之间移动并供给气体，头单元62为 构造成当头单元62位于第一位置时，将成膜气体供给到形成在安装台34和头单元62之间的小体积区域，并将成膜气体吸附在目标基板W上。

公开(公告)号：US08915999B2

公开(公告)日：2014-12-23

申请号：US12446913

申请日：2007-09-26

申请人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

发明人： Masahiro Okesaku ,  Tadahiro Ohmi ,  Tetsuya Goto ,  Takaaki Matsuoka ,  Toshihisa Nozawa ,  Atsutoshi Inokuchi ,  Kiyotaka Ishibashi

IPC分类号： C23C16/455 ,  H01J37/32 ,  H01L21/3065

CPC分类号： H01J37/3244 ,  C23C16/45565 ,  C23C16/45568 ,  H01J37/32192 ,  H01J37/32449 ,  H01J37/32477 ,  H01J37/3255

摘要： A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

摘要翻译： 喷淋板设置在等离子体处理装置的处理室中，等离子体激发气体释放到处理室中以产生等离子体。 具有多个直径为20μm至70μm的气体释放孔的陶瓷构件和/或具有气体连通方向上连通的最大直径不大于75μm的孔的多孔气体连通体被烧结 并且与用作等离子体激发气体的释放路径的多个垂直孔的每一个的内部一体地结合。

公开(公告)号：US20130302992A1

公开(公告)日：2013-11-14

申请号：US13885708

申请日：2011-11-16

申请人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

发明人： Toshihisa Nozawa ,  Caizhong Tian ,  Masaru Sasaki ,  Naoki Mihara ,  Naoki Matsumoto ,  Kazuki Moyama ,  Jun Yoshikawa

IPC分类号： H05H1/46

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32211 ,  H01J37/3244

摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.

摘要翻译： 一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一 第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。 来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

公开(公告)号：US20120186521A1

公开(公告)日：2012-07-26

申请号：US13496540

申请日：2010-09-14

申请人： Masahide Iwasaki ,  Toshihisa Nozawa

发明人： Masahide Iwasaki ,  Toshihisa Nozawa

IPC分类号： C23C16/50 ,  C23C16/511

CPC分类号： H01L21/02274 ,  C23C16/45517 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/28194

摘要： A plasma processing apparatus 31 includes a processing chamber 32; a gas supply unit 33 for supplying a plasma processing gas into a processing chamber 32; a mounting table 34 configured to hold the target substrate W thereon; a plasma generating device 39 configured to generate plasma within the processing chamber 32; and a gas supply device 61. The gas supply device 61 includes a head unit 62 configured to move between a first position above the mounting table 34 and a second position different from the first position and to supply a gas, and the head unit 62 is configured to supply a film forming gas to a small-volume region formed between the mounting table 34 and the head unit 62 when the head unit 62 is positioned at the first position and to adsorb the film forming gas on the target substrate W.

摘要翻译： 等离子体处理装置31包括处理室32; 用于将等离子体处理气体供给到处理室32中的气体供给单元33; 配置成将目标基板W保持在其上的安装台34; 构造成在处理室32内产生等离子体的等离子体产生装置39; 气体供给装置61.气体供给装置61包括头单元62，其构造成在安装台34上方的第一位置和与第一位置不同的第二位置之间移动并供给气体，头单元62为 构造成当头单元62位于第一位置时，将成膜气体供给到形成在安装台34和头单元62之间的小体积区域，并将成膜气体吸附在目标基板W上。

公开(公告)号：US08173928B2

公开(公告)日：2012-05-08

申请号：US12161591

申请日：2007-03-05

申请人： Toshihisa Nozawa ,  Tamaki Yuasa

发明人： Toshihisa Nozawa ,  Tamaki Yuasa

IPC分类号： B23K10/00

CPC分类号： H01L21/67126 ,  C23C16/4412 ,  C23C16/511 ,  C23C16/52 ,  H01J37/32834 ,  H01L21/67017 ,  Y10T137/85978

摘要： In a processing apparatus for performing a specified process on a target object at a predetermined process pressure, the apparatus includes an evacuable processing chamber having a gas exhaust port formed in a bottom portion thereof; a mounting table provided within the processing chamber for holding the target object; a pressure control valve connected to the gas exhaust port, the pressure control valve including a slide-type valve body for changing an area of an opening region of a valve port; and a gas exhaust system connected to the pressure control valve. The pressure control valve is eccentrically arranged such that a center axis of the mounting table lies within an opening region of the pressure control valve formed over a practical use region of a valve opening degree of the pressure control valve.

摘要翻译： 在用于以预定处理压力对目标物体进行特定处理的处理装置中，该装置包括：排气口，其具有形成在其底部的排气口; 设置在处理室内用于保持目标物体的安装台; 连接到排气口的压力控制阀，所述压力控制阀包括用于改变阀口的开口区域的面积的滑动式阀体; 以及连接到压力控制阀的排气系统。 压力控制阀偏心地布置成使得安装台的中心轴线位于在压力控制阀的阀开度的实际使用区域上形成的压力控制阀的开口区域内。