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公开(公告)号:US08583972B2
公开(公告)日:2013-11-12
申请号:US13486718
申请日:2012-06-01
申请人: Toshikatsu Hida , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
发明人: Toshikatsu Hida , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
IPC分类号: G11C29/00
CPC分类号: G06F11/1412 , G06F11/1068 , G06F11/1402 , G06F12/02 , G11C16/0483 , G11C16/3418 , G11C16/3431
摘要: A method of controlling a nonvolatile semiconductor memory including a plurality of blocks, each one of the plurality of blocks being a unit of data erasing, includes determining a monitored block as a candidate for refresh operation from among the plurality of blocks based on a predetermined condition. The method includes monitoring an error count of data stored in the monitored block and not monitoring an error count of data stored in blocks excluding the monitored block among the plurality of blocks. The method also includes performing the refresh operation on data stored in the monitored block in which the error count is larger than a first threshold value.
摘要翻译: 一种控制包括多个块的非易失性半导体存储器的方法,所述多个块中的每一个是数据擦除单元,包括:基于预定条件,将所监视的块作为所述多个块中的刷新操作的候补确定 。 该方法包括监视存储在所监视的块中的数据的错误计数,并且不监视存储在多个块中的被监视块之外的块中存储的数据的错误计数。 该方法还包括对存储在监视块中的数据执行刷新操作,其中错误计数大于第一阈值。
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公开(公告)号:US20120030528A1
公开(公告)日:2012-02-02
申请号:US13270788
申请日:2011-10-11
申请人: Toshikatsu HIDA , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
发明人: Toshikatsu HIDA , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
CPC分类号: G06F11/1412 , G06F11/1068 , G06F11/1402 , G06F12/02 , G11C16/0483 , G11C16/3418 , G11C16/3431
摘要: As a semiconductor storage device that can efficiently perform a refresh operation, provided is a semiconductor storage device comprising a non-volatile semiconductor memory storing data in blocks, the block being a unit of data erasing, and a controlling unit monitoring an error count of data stored in a monitored block selected from the blocks and refreshing data in the monitored block in which the error count is equal to or larger than a threshold value.
摘要翻译: 作为可以有效地执行刷新操作的半导体存储装置,提供了一种半导体存储装置,其包括以块为单位存储数据的非易失性半导体存储器,该块是数据擦除单元,以及监视数据的错误计数的控制单元 存储在从所述块中选择的监视块和所述监视块中的刷新数据中,其中所述错误计数等于或大于阈值。
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公开(公告)号:US20100313084A1
公开(公告)日:2010-12-09
申请号:US12529282
申请日:2008-09-22
申请人: Toshikatsu Hida , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
发明人: Toshikatsu Hida , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
CPC分类号: G06F11/1412 , G06F11/1068 , G06F11/1402 , G06F12/02 , G11C16/0483 , G11C16/3418 , G11C16/3431
摘要: As a semiconductor storage device that can efficiently perform a refresh operation, provided is a semiconductor storage device comprising a non-volatile semiconductor memory storing data in blocks, the block being a unit of data erasing, and a controlling unit monitoring an error count of data stored in a monitored block selected from the blocks and refreshing data in the monitored block in which the error count is equal to or larger than a threshold value.
摘要翻译: 作为可以有效地执行刷新操作的半导体存储装置,提供了一种半导体存储装置,其包括以块为单位存储数据的非易失性半导体存储器,该块是数据擦除单元,以及监视数据的错误计数的控制单元 存储在从所述块中选择的监视块和所述监视块中的刷新数据中,其中所述错误计数等于或大于阈值。
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公开(公告)号:US08219861B2
公开(公告)日:2012-07-10
申请号:US13270788
申请日:2011-10-11
申请人: Toshikatsu Hida , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
发明人: Toshikatsu Hida , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
IPC分类号: G11C29/00
CPC分类号: G06F11/1412 , G06F11/1068 , G06F11/1402 , G06F12/02 , G11C16/0483 , G11C16/3418 , G11C16/3431
摘要: As a semiconductor storage device that can efficiently perform a refresh operation, provided is a semiconductor storage device comprising a non-volatile semiconductor memory storing data in blocks, the block being a unit of data erasing, and a controlling unit monitoring an error count of data stored in a monitored block selected from the blocks and refreshing data in the monitored block in which the error count is equal to or larger than a threshold value.
摘要翻译: 作为可以有效地执行刷新操作的半导体存储装置,提供了一种半导体存储装置,其包括以块为单位存储数据的非易失性半导体存储器,该块是数据擦除单元,以及监视数据的错误计数的控制单元 存储在从所述块中选择的监视块和所述监视块中的刷新数据中,其中所述错误计数等于或大于阈值。
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公开(公告)号:US08060797B2
公开(公告)日:2011-11-15
申请号:US12529282
申请日:2008-09-22
申请人: Toshikatsu Hida , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
发明人: Toshikatsu Hida , Shinichi Kanno , Hirokuni Yano , Kazuya Kitsunai , Shigehiro Asano , Junji Yano
IPC分类号: G06F11/00
CPC分类号: G06F11/1412 , G06F11/1068 , G06F11/1402 , G06F12/02 , G11C16/0483 , G11C16/3418 , G11C16/3431
摘要: A semiconductor storage device can efficiently perform a refresh operation. A semiconductor storage device is provided which includes a non-volatile semiconductor memory storing data in blocks, the block being a unit of data erasing. A controlling unit is further included monitoring an error count of data stored in a monitored block selected from the blocks and for refreshing data in the monitored block in which the error count is equal to or larger than a threshold value.
摘要翻译: 半导体存储装置可以有效地执行刷新操作。 提供一种半导体存储装置,其包括以块为单位存储数据的非易失性半导体存储器,该块是数据擦除的单位。 还包括控制单元,用于监视存储在从块中选择的监视块中的数据的错误计数,以及用于刷新其中错误计数等于或大于阈值的监视块中的数据。
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公开(公告)号:US20100146228A1
公开(公告)日:2010-06-10
申请号:US12705431
申请日:2010-02-12
申请人: Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Kazuya Kitsunai , Junji Yano
发明人: Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Kazuya Kitsunai , Junji Yano
CPC分类号: G11C16/349 , G06F11/1068 , G06F12/0246 , G06F2212/7211 , G11C16/16 , G11C29/76
摘要: A memory system includes a nonvolatile memory including blocks as data erase units, a measuring unit which measures an erase time at which data in each block is erased, a block controller having a block table which associates a state value indicating one of a free state and a used state with the erase time for each block, a detector which detects blocks in which rewrite has collectively occurred within a short period, a first selector which selects a free block having an old erase time as a first block, a second selector which selects a block in use having an old erase time as a second block, and a leveling unit which moves data in the second block to the first block if the first block is included in the blocks detected by the detector.
摘要翻译: 一种存储器系统,包括:包括作为数据擦除单元的块的非易失性存储器,测量擦除每个块中的数据的擦除时间的测量单元;具有块表的块控制器,其将指示空闲状态之一的状态值和 具有每个块的擦除时间的使用状态,检测在短时间内共同发生重写的块的检测器,选择具有旧擦除时间的空闲块作为第一块的第一选择器,选择 如果第一块被包括在由检测器检测到的块中,则将具有旧擦除时间的块用作第二块;以及调平单元,其将第二块中的数据移动到第一块。
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公开(公告)号:US20100077266A1
公开(公告)日:2010-03-25
申请号:US12551213
申请日:2009-08-31
申请人: Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Kazuya Kitsunai , Junji Yano
发明人: Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Kazuya Kitsunai , Junji Yano
CPC分类号: G11C16/349 , G06F11/1068 , G06F12/0246 , G06F2212/7211 , G11C16/16 , G11C29/76
摘要: A memory system includes a nonvolatile memory including blocks as data erase units, a measuring unit which measures an erase time at which data in each block is erased, a block controller having a block table which associates a state value indicating one of a free state and a used state with the erase time for each block, a detector which detects blocks in which rewrite has collectively occurred within a short period, a first selector which selects a free block having an old erase time as a first block, a second selector which selects a block in use having an old erase time as a second block, and a leveling unit which moves data in the second block to the first block if the first block is included in the blocks detected by the detector.
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公开(公告)号:US07958411B2
公开(公告)日:2011-06-07
申请号:US12551213
申请日:2009-08-31
申请人: Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Kazuya Kitsunai , Junji Yano
发明人: Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Kazuya Kitsunai , Junji Yano
CPC分类号: G11C16/349 , G06F11/1068 , G06F12/0246 , G06F2212/7211 , G11C16/16 , G11C29/76
摘要: A memory system includes a nonvolatile memory including blocks as data erase units, a measuring unit which measures an erase time at which data in each block is erased, a block controller having a block table which associates a state value indicating one of a free state and a used state with the erase time for each block, a detector which detects blocks in which rewrite has collectively occurred within a short period, a first selector which selects a free block having an old erase time as a first block, a second selector which selects a block in use having an old erase time as a second block, and a leveling unit which moves data in the second block to the first block if the first block is included in the blocks detected by the detector.
摘要翻译: 一种存储器系统,包括:包括作为数据擦除单元的块的非易失性存储器,测量擦除每个块中的数据的擦除时间的测量单元;具有块表的块控制器,其将指示空闲状态之一的状态值和 具有每个块的擦除时间的使用状态,检测在短时间内共同发生重写的块的检测器,选择具有旧擦除时间的空闲块作为第一块的第一选择器,选择 如果第一块被包括在由检测器检测到的块中,则将具有旧擦除时间的块用作第二块,以及调平单元,其将第二块中的数据移动到第一块。
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公开(公告)号:US20100223424A1
公开(公告)日:2010-09-02
申请号:US12778484
申请日:2010-05-12
申请人: KAZUYA KITSUNAI , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
发明人: KAZUYA KITSUNAI , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
CPC分类号: G06F3/0604 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0647 , G06F3/0652 , G06F3/0659 , G06F3/0679 , G06F3/0685 , G06F12/0246 , G06F2212/1036 , G06F2212/7202 , G06F2212/7205 , G06F2212/7211
摘要: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.
摘要翻译: 存储器系统包括包括作为数据擦除单元的多个块的非易失性存储器,测量擦除每个块的数据的擦除时间的测量单元,以及写入从至少外部提供的数据到第一 块设置为空闲状态,擦除时间最长。
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公开(公告)号:US08015347B2
公开(公告)日:2011-09-06
申请号:US12552422
申请日:2009-09-02
申请人: Kazuya Kitsunai , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
发明人: Kazuya Kitsunai , Shinichi Kanno , Hirokuni Yano , Toshikatsu Hida , Junji Yano
IPC分类号: G06F13/00
CPC分类号: G06F3/0604 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0647 , G06F3/0652 , G06F3/0659 , G06F3/0679 , G06F3/0685 , G06F12/0246 , G06F2212/1036 , G06F2212/7202 , G06F2212/7205 , G06F2212/7211
摘要: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.
摘要翻译: 存储器系统包括包括作为数据擦除单元的多个块的非易失性存储器,测量擦除每个块的数据的擦除时间的测量单元,以及写入从至少外部提供的数据到第一 块设置为空闲状态,擦除时间最长。
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