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    Memory system and control method thereof
    2.
    发明授权
    Memory system and control method thereof 有权
    存储系统及其控制方法

    公开(公告)号：US07958411B2

    公开(公告)日：2011-06-07

    申请号：US12551213

    申请日：2009-08-31

    申请人： Shinichi Kanno ,  Hirokuni Yano ,  Toshikatsu Hida ,  Kazuya Kitsunai ,  Junji Yano

    发明人： Shinichi Kanno ,  Hirokuni Yano ,  Toshikatsu Hida ,  Kazuya Kitsunai ,  Junji Yano

    IPC分类号： G11C29/00 ,  G06F13/00 ,  G06F13/28

    CPC分类号： G11C16/349 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7211 ,  G11C16/16 ,  G11C29/76

    摘要： A memory system includes a nonvolatile memory including blocks as data erase units, a measuring unit which measures an erase time at which data in each block is erased, a block controller having a block table which associates a state value indicating one of a free state and a used state with the erase time for each block, a detector which detects blocks in which rewrite has collectively occurred within a short period, a first selector which selects a free block having an old erase time as a first block, a second selector which selects a block in use having an old erase time as a second block, and a leveling unit which moves data in the second block to the first block if the first block is included in the blocks detected by the detector.

    摘要翻译： 一种存储器系统，包括：包括作为数据擦除单元的块的非易失性存储器，测量擦除每个块中的数据的擦除时间的测量单元;具有块表的块控制器，其将指示空闲状态之一的状态值和 具有每个块的擦除时间的使用状态，检测在短时间内共同发生重写的块的检测器，选择具有旧擦除时间的空闲块作为第一块的第一选择器，选择 如果第一块被包括在由检测器检测到的块中，则将具有旧擦除时间的块用作第二块，以及调平单元，其将第二块中的数据移动到第一块。

    Method of controlling a semiconductor storage device
    5.
    发明授权
    Method of controlling a semiconductor storage device 有权
    控制半导体存储装置的方法

    公开(公告)号：US08583972B2

    公开(公告)日：2013-11-12

    申请号：US13486718

    申请日：2012-06-01

    申请人： Toshikatsu Hida ,  Shinichi Kanno ,  Hirokuni Yano ,  Kazuya Kitsunai ,  Shigehiro Asano ,  Junji Yano

    发明人： Toshikatsu Hida ,  Shinichi Kanno ,  Hirokuni Yano ,  Kazuya Kitsunai ,  Shigehiro Asano ,  Junji Yano

    IPC分类号： G11C29/00

    CPC分类号： G06F11/1412 ,  G06F11/1068 ,  G06F11/1402 ,  G06F12/02 ,  G11C16/0483 ,  G11C16/3418 ,  G11C16/3431

    摘要： A method of controlling a nonvolatile semiconductor memory including a plurality of blocks, each one of the plurality of blocks being a unit of data erasing, includes determining a monitored block as a candidate for refresh operation from among the plurality of blocks based on a predetermined condition. The method includes monitoring an error count of data stored in the monitored block and not monitoring an error count of data stored in blocks excluding the monitored block among the plurality of blocks. The method also includes performing the refresh operation on data stored in the monitored block in which the error count is larger than a first threshold value.

    摘要翻译： 一种控制包括多个块的非易失性半导体存储器的方法，所述多个块中的每一个是数据擦除单元，包括：基于预定条件，将所监视的块作为所述多个块中的刷新操作的候补确定 。 该方法包括监视存储在所监视的块中的数据的错误计数，并且不监视存储在多个块中的被监视块之外的块中存储的数据的错误计数。 该方法还包括对存储在监视块中的数据执行刷新操作，其中错误计数大于第一阈值。

    MEMORY SYSTEM AND CONTROL METHOD THEREOF
    6.
    发明申请
    MEMORY SYSTEM AND CONTROL METHOD THEREOF 有权
    存储系统及其控制方法

    公开(公告)号：US20100146228A1

    公开(公告)日：2010-06-10

    申请号：US12705431

    申请日：2010-02-12

    申请人： Shinichi Kanno ,  Hirokuni Yano ,  Toshikatsu Hida ,  Kazuya Kitsunai ,  Junji Yano

    发明人： Shinichi Kanno ,  Hirokuni Yano ,  Toshikatsu Hida ,  Kazuya Kitsunai ,  Junji Yano

    IPC分类号： G06F12/00 ,  G11C16/04 ,  G06F11/00

    CPC分类号： G11C16/349 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7211 ,  G11C16/16 ,  G11C29/76

    摘要： A memory system includes a nonvolatile memory including blocks as data erase units, a measuring unit which measures an erase time at which data in each block is erased, a block controller having a block table which associates a state value indicating one of a free state and a used state with the erase time for each block, a detector which detects blocks in which rewrite has collectively occurred within a short period, a first selector which selects a free block having an old erase time as a first block, a second selector which selects a block in use having an old erase time as a second block, and a leveling unit which moves data in the second block to the first block if the first block is included in the blocks detected by the detector.

    摘要翻译： 一种存储器系统，包括：包括作为数据擦除单元的块的非易失性存储器，测量擦除每个块中的数据的擦除时间的测量单元;具有块表的块控制器，其将指示空闲状态之一的状态值和 具有每个块的擦除时间的使用状态，检测在短时间内共同发生重写的块的检测器，选择具有旧擦除时间的空闲块作为第一块的第一选择器，选择 如果第一块被包括在由检测器检测到的块中，则将具有旧擦除时间的块用作第二块;以及调平单元，其将第二块中的数据移动到第一块。

    MEMORY SYSTEM AND CONTROL METHOD THEREOF
    9.
    发明申请
    MEMORY SYSTEM AND CONTROL METHOD THEREOF 审中-公开
    存储系统及其控制方法

    公开(公告)号：US20110219177A1

    公开(公告)日：2011-09-08

    申请号：US13107623

    申请日：2011-05-13

    申请人： Shinichi Kanno ,  Hirokuni Yano ,  Toshikatsu Hida ,  Kazuya Kitsunai ,  Junji Yano

    发明人： Shinichi Kanno ,  Hirokuni Yano ,  Toshikatsu Hida ,  Kazuya Kitsunai ,  Junji Yano

    IPC分类号： G06F12/06

    CPC分类号： G11C16/349 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7211 ,  G11C16/16 ,  G11C29/52 ,  G11C29/76

    摘要： A memory system includes a nonvolatile memory including blocks as data erase units, a measuring unit which measures an erase time at which data in each block is erased, a block controller having a block table which associates a state value indicating one of a free state and a used state with the erase time for each block, a detector which detects blocks in which rewrite has collectively occurred within a short period, a first selector which selects a free block having an old erase time as a first block, a second selector which selects a block in use having an old erase time as a second block, and a leveling unit which moves data in the second block to the first block if the first block is included in the blocks detected by the detector.

    摘要翻译： 一种存储器系统，包括：包括作为数据擦除单元的块的非易失性存储器，测量擦除每个块中的数据的擦除时间的测量单元;具有块表的块控制器，其将指示空闲状态之一的状态值和 具有每个块的擦除时间的使用状态，检测在短时间内共同发生重写的块的检测器，选择具有旧擦除时间的空闲块作为第一块的第一选择器，选择 如果第一块被包括在由检测器检测到的块中，则将具有旧擦除时间的块用作第二块;以及调平单元，其将第二块中的数据移动到第一块。