Nitride-based semiconductor light emitting device and manufacturing method thereof
    3.
    发明授权
    Nitride-based semiconductor light emitting device and manufacturing method thereof 有权
    氮化物系半导体发光元件及其制造方法

    公开(公告)号:US07939349B2

    公开(公告)日:2011-05-10

    申请号:US11494845

    申请日:2006-07-27

    IPC分类号: H01L21/00

    CPC分类号: H01L33/22 H01L33/38 H01L33/42

    摘要: The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

    摘要翻译: 公开了氮化物系半导体发光元件及其制造方法:氮化物系半导体发光元件具备形成在支撑基板上的反射层,p型氮化物系半导体层,发光层 以及依次形成在所述反射层上的n型氮化物系半导体层,其中在位于所述n型氮化物基半导体层上方的光提取面上形成凹凸。

    Nitride-based semiconductor light emitting device and manufacturing method thereof
    4.
    发明申请
    Nitride-based semiconductor light emitting device and manufacturing method thereof 有权
    氮化物系半导体发光元件及其制造方法

    公开(公告)号:US20060267033A1

    公开(公告)日:2006-11-30

    申请号:US11494845

    申请日:2006-07-27

    IPC分类号: H01L33/00

    CPC分类号: H01L33/22 H01L33/38 H01L33/42

    摘要: The nitride-based semiconductor light-emitting device and manufacturing method thereof are disclosed: the nitride-based semiconductor light-emitting device includes a reflective layer formed on a support substrate, a p-type nitride-based semiconductor layer, a light-emitting layer and an n-type nitride-based semiconductor layer successively formed on the reflective layer, wherein irregularities are formed on a light extracting surface located above the n-type nitride-based semiconductor layer.

    摘要翻译: 公开了氮化物系半导体发光元件及其制造方法:氮化物系半导体发光元件具备形成在支撑基板上的反射层,p型氮化物系半导体层,发光层 以及依次形成在所述反射层上的n型氮化物系半导体层,其中在位于所述n型氮化物基半导体层上方的光提取面上形成凹凸。

    Nitride semiconductor light emitting device and manufacturing method thereof
    6.
    发明授权
    Nitride semiconductor light emitting device and manufacturing method thereof 有权
    氮化物半导体发光器件及其制造方法

    公开(公告)号:US06794685B2

    公开(公告)日:2004-09-21

    申请号:US10237468

    申请日:2002-09-06

    IPC分类号: H01L2715

    摘要: The light emitting device includes a p type nitride semiconductor layer, a light emitting layer and an n type nitride semiconductor layer stacked on an Si (silicon) substrate in this order from the side of the Si substrate. The Si substrate is partially removed to expose a part of the p type nitride semiconductor layer. On the exposed region of the p type nitride semiconductor layer, a p type electrode is formed.

    摘要翻译: 发光器件包括从Si衬底侧依次层叠在Si(硅)衬底上的p型氮化物半导体层,发光层和n型氮化物半导体层。 部分去除Si衬底以暴露p型氮化物半导体层的一部分。 在p型氮化物半导体层的露出区域上形成p型电极。

    Nitride type compound semiconductor light emitting element
    7.
    发明授权
    Nitride type compound semiconductor light emitting element 有权
    氮化物型化合物半导体发光元件

    公开(公告)号:US06720584B2

    公开(公告)日:2004-04-13

    申请号:US10004913

    申请日:2001-12-03

    IPC分类号: H01L2715

    摘要: In a nitride type compound semiconductor light emitting element, a phosphor layer is formed in a multilayer constituting the light emitting element. A highly-reflective layer is formed at a side plane of the light emitting element. The nitride type compound semiconductor light emitting element can emit white light or multi-colored light, and is superior in mass production and reliability. The wavelength of the emitted light can be converted into a different wavelength by the light emitting element alone.

    摘要翻译: 在氮化物型化合物半导体发光元件中,在构成发光元件的多层中形成荧光体层。 在发光元件的侧面形成高反射层。 氮化物型化合物半导体发光元件可以发出白光或多色光,并且生产和可靠性优异。 发射光的波长可以通过单独的发光元件转换成不同的波长。

    Nitride semiconductor light-emitting element and manufacturing method thereof
    8.
    发明申请
    Nitride semiconductor light-emitting element and manufacturing method thereof 审中-公开
    氮化物半导体发光元件及其制造方法

    公开(公告)号:US20070096123A1

    公开(公告)日:2007-05-03

    申请号:US11592478

    申请日:2006-11-02

    IPC分类号: H01L33/00

    CPC分类号: H01L33/22 H01L33/32 H01L33/42

    摘要: A nitride semiconductor light-emitting element, including a first-conductivity-type nitride semiconductor layer, an active layer, and a second-conductivity-type nitride semiconductor layer successively stacked on a substrate, in which a light extraction surface located above the second-conductivity-type nitride semiconductor layer has a conical or pyramidal projecting portion, as well as a method of manufacturing the nitride semiconductor light-emitting element are provided.

    摘要翻译: 一种氮化物半导体发光元件,包括依次层叠在基板上的第一导电型氮化物半导体层,有源层和第二导电型氮化物半导体层,其中位于第二导电型氮化物半导体层的上方的光提取面, 导电型氮化物半导体层具有锥形或金字塔状的突出部分,以及制造氮化物半导体发光元件的方法。

    Semiconductor light-emitting device and method of producing the same
    9.
    发明授权
    Semiconductor light-emitting device and method of producing the same 有权
    半导体发光器件及其制造方法

    公开(公告)号:US08461618B2

    公开(公告)日:2013-06-11

    申请号:US13185219

    申请日:2011-07-18

    IPC分类号: H01L33/00

    摘要: A semiconductor light-emitting device includes a substrate, an n-type semiconductor layer located above the substrate, a semiconductor light-emitting layer located on the n-type semiconductor layer, a p-type semiconductor layer located on the semiconductor light-emitting layer. The semiconductor light-emitting device also includes an insulation film located on part of the p-type semiconductor layer in an unexposed section, a first transparent conductive film located on substantially the whole of the p-type semiconductor layer where the insulation film is not located in the unexposed section, and a second transparent conductive film located on the insulation film and the first transparent conductive film. The semiconductor light-emitting device further includes an n-side electrode located above the n-type semiconductor layer in an exposed section and electrically connected to the n-type semiconductor layer, and a p-side electrode located on the second transparent conductive film above the insulation film and electrically connected to the p-type semiconductor layer.

    摘要翻译: 半导体发光器件包括衬底,位于衬底上方的n型半导体层,位于n型半导体层上的半导体发光层,位于半导体发光层上的p型半导体层 。 半导体发光装置还包括位于未曝光部分中的p型半导体层的一部分上的绝缘膜,位于绝缘膜不位于基本上整个p型半导体层的第一透明导电膜 以及位于绝缘膜和第一透明导电膜上的第二透明导电膜。 半导体发光装置还包括位于暴露部分中并与n型半导体层电连接的n型半导体层上方的n侧电极和位于上述第二透明导电膜上的p侧电极 绝缘膜并与p型半导体层电连接。