摘要:
An optical shutter array comprising a transparent substrate of a material exhibiting an electrooptic effect having parallel channels and electrodes of a conductive resin composition disposed in the channels can be driven with a lower voltage while minimizing cross-talk. Contact pads on the channel electrodes facilitate wire bonding to the electrodes, and a transparent dielectric film covering the substrate surface prevents damage to the electrodes by air discharge and provides abrasion resistance. The use of an anisotropic conductive connector and a flexible printed wiring connector ensures simple positive wire connection.
摘要:
A charge-coupled solid-state imaging device is arranged in such a manner that the pixel signal generated at each pixel is transferred through a plurality of divided transfer elements generated at each vertical charge transfer path and that the divided transferred pixel signals are synthesized at the horizontal charge transfer path and then outputted as the original pixel signal. The charge transfer capacity is therefore increased even if the width of each vertical charge transfer path is narrowed, thereby preventing blooming and dynamic range reduction. In addition, the narrowing of the width of each vertical charge transfer path allows the aperture to be increased commensurate with the degree of narrowing to thereby improve light receiving sensitivity and result in an advantageous high-resolution imaging device.
摘要:
A function separated type electrophotographic light-sensitive member and a process for production thereof are described, said member comprising an electrically conductive support, a light-sensitive layer made of a hydrogen-doped amorphous silicon semiconductor, and an organic electric charge transport layer containing at least one positive charge transport carrier selected from the group consisting of pyrazolines, aryl-alkanes, arylketones, arylamines and chalcones.
摘要:
A solid state image pickup device having: a vertical addition unit for adding electric charges of two or more photoelectric conversion elements on a vertical charge transfer path, by controlling read gates and the vertical charge transfer path to read electric charges from some of the plurality of photoelectric conversion elements to the vertical charge transfer path, transfer the read electric charges on the vertical charge transfer path to the downstream side in the vertical direction, and read electric charges from others of the plurality of photoelectric elements on the downstream side to the vertical charge transfer path; and a horizontal addition unit for adding electric charges transferred from two or more of the vertical charge transfer paths, on the horizontal charge transfer path, by controlling transfer gates and the horizontal charge transfer path to transfer electric charges from some of the plurality of vertical charge transfer paths to the horizontal charge transfer path, transfer the electric charges on the horizontal charge transfer path to the downstream side in the horizontal direction, and transfer electric charges from others of the plurality of vertical charge transfer paths on the downstream side to the horizontal charge transfer path.
摘要:
A solid-state CCD image pick-up device includes optoelectric transducing elements corresponding to pixels vertically and horizontally arrayed in a matrix forming column linear arrays defining a column direction and at least one vertical charge transfer path associated with a corresponding adjacent column linear array. Pixel signals are vertically transferred from the column linear arrays to the vertical charge transfer paths such that gate signals occurring at predetermined times are applied to gate electrodes of the vertical charge transfer paths to permit the pixel signals to be scan read by a horizontal charge transfer path. Switching elements are provided for transfer gate electrodes and a drive circuit sequentially generates drive signals for groups of gate electrodes during periods in which the switching elements are rendered conductive to allow a full frame scan read to be performed by supplying a predetermined number of timing signals to the gate electrodes. The pick-up device can be fabricated with high density integration and high pixel density and can be provided with an improved vertical overflow drain structure. The image pick-up device also provides an electronic shutter function having improved vertical resolution. A shift register for producing improved vertical resolution is also disclosed.
摘要:
A control method for a solid state image pickup device has: a preliminary trial image pickup step of making a plurality type of photoelectric conversion elements generate and accumulate electric charges during a predetermined charge accumulation time and detecting a charge amount corresponding to an intensity of light of each color; a calculation step of calculating a charge accumulation time of photosensitive conversion elements independently for each color so as to obtain a good white balance, in accordance with the charge amount corresponding to the intensity of light of each color detected by the preliminary trial image pickup step; and a final image pickup step of controlling the charge accumulation time of photosensitive conversion elements independently for each color by using the electronic shutters and a mechanical shutter and through reading electric charges from the photoelectric conversion elements to vertical charge transfer paths, in accordance with the calculated charge accumulation times, and making the plurality type of photoelectric conversion elements generate and accumulate electric charges. An image having a good white balance and an image with good color reproductivity can be obtained by controlling the charge accumulation times of photoelectric conversion elements independently for each color.
摘要:
A solid-state CCD image pick-up device includes optoelectric transducing elements corresponding to pixels vertically and horizontally arrayed in a matrix forming column linear arrays defining a column direction and at least one vertical charge transfer path associated with a corresponding adjacent column linear array. Pixel signals are vertically transferred from the column linear arrays to the vertical charge transfer paths such that gate signals occurring at predetermined times are applied to gate electrodes of the vertical charge transfer paths to permit the pixel signals to be scan read by a horizontal charge transfer path. Switching elements are provided for transfer gate electrodes and a drive circuit sequentially generates drive signals for groups of gate electrodes during periods in which the switching elements are rendered conductive to allow a full frame scan read to be performed by supplying a predetermined number of timing signals to the gate electrodes. The pick-up device can be fabricated with high density integration and high pixel density and can be provided with an improved vertical overflow drain structure. The image pick-up device also provides an electronic shutter function having improved vertical resolution. A shift register for producing improved vertical resolution is also disclosed.
摘要:
A solid-state CCD image pick-up device includes optoelectric transducing elements corresponding to pixels vertically and horizontally arrayed in a matrix forming column linear arrays defining a column direction and at least one vertical charge transfer path associated with a corresponding adjacent column linear array. Pixel signals are vertically transferred from the column linear arrays to the vertical charge transfer paths such that gate signals occurring at predetermined times are applied to gate electrodes of the vertical charge transfer paths to permit the pixel signals to be scan read by a horizontal charge transfer path. Switching elements are provided for transfer gate electrodes and a drive circuit sequentially generates drive signals for groups of gate electrodes during periods in which the switching elements are rendered conductive to allow a full frame scan read to be performed by supplying a predetermined number of timing signals to the gate electrodes. The pick-up device can be fabricated with high density integration and high pixel density and can be provided with an improved vertical overflow drain structure. The image pick-up device also provides an electronic shutter function having improved vertical resolution. A shift register for producing improved vertical resolution is also disclosed.
摘要:
An electrophotographic light-sensitive element and process for the production thereof are described, wherein the element comprises an electrically conductive support coated with a photoconductive layer composed of a silicon- and carbon-based amorphous material doped with hydrogen and fluorine.