公开(公告)号：US20130260650A1

公开(公告)日：2013-10-03

申请号：US13882280

申请日：2011-11-07

申请人： Toshio Shinoda ,  Kayoko Nagahara ,  Yutaka Inoue ,  Shuhei Takahashi ,  Toshihiro Miwa

发明人： Toshio Shinoda ,  Kayoko Nagahara ,  Yutaka Inoue ,  Shuhei Takahashi ,  Toshihiro Miwa

IPC分类号： C09G1/02 ,  B24B31/00

CPC分类号： C09G1/02 ,  B24B31/003 ,  H01L21/02024

摘要： Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface.

摘要翻译： 本发明提供一种抛光组合物，其含有磨粒，至少一种选自碳原子数2〜6的脂肪族醇和碳原子数3〜10的二醇醚的醇类化合物，至少一种选自 由季铵盐和碱金属盐组成的组和水。 磨粒的平均一次粒径为5〜50nm。 抛光组合物中醇化合物的含量为0.01〜1质量％。 抛光组合物主要用于研磨半导体衬底表面的应用中。

公开(公告)号：US09090799B2

公开(公告)日：2015-07-28

申请号：US13882280

申请日：2011-11-07

申请人： Toshio Shinoda ,  Kayoko Nagahara ,  Yutaka Inoue ,  Shuhei Takahashi ,  Toshihiro Miwa

发明人： Toshio Shinoda ,  Kayoko Nagahara ,  Yutaka Inoue ,  Shuhei Takahashi ,  Toshihiro Miwa

IPC分类号： B24B1/00 ,  C09G1/02 ,  H01L21/02 ,  B24B31/00

CPC分类号： C09G1/02 ,  B24B31/003 ,  H01L21/02024

摘要： Provided is a polishing composition containing abrasive grains, at least one type of alcohol compound selected from the group consisting of aliphatic alcohols with 2 to 6 carbon atoms and glycol ethers with 3 to 10 carbon atoms, at least one type of basic compound selected from the group consisting of quaternary ammonium salts and alkali metal salts, and water. The average primary particle diameter of the abrasive grains is 5 to 50 nm. The content of the alcohol compound in the polishing composition is 0.01 to 1% by mass. The polishing composition is mainly used in an application of polishing a semiconductor substrate surface.

摘要翻译： 本发明提供一种抛光组合物，其含有磨粒，至少一种选自碳原子数2〜6的脂肪族醇和碳原子数3〜10的二醇醚的醇类化合物，至少一种选自 由季铵盐和碱金属盐组成的组和水。 磨粒的平均一次粒径为5〜50nm。 抛光组合物中醇化合物的含量为0.01〜1质量％。 抛光组合物主要用于研磨半导体衬底表面的应用中。

公开(公告)号：US20050205837A1

公开(公告)日：2005-09-22

申请号：US11084415

申请日：2005-03-18

申请人： Toshihiro Miwa

发明人： Toshihiro Miwa

IPC分类号： B24B37/00 ,  B44C1/22 ,  C09G1/02 ,  C09K3/14 ,  C09K13/00 ,  H01L21/302 ,  H01L21/304 ,  H01L21/306

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/02024

摘要： A polishing composition includes silicon dioxide, an alkaline compound, an anionic surfactant, and water. The silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The alkaline compound is, for example, potassium hydroxide, sodium hydroxide, ammonia, tetramethylammonium hydroxide, piperazine anhydride, or piperazine hexahydrate. The anionic surfactant is at least one selected from a sulfonic acid surfactant, a carboxylic acid surfactant, and a sulfuric acid ester surfactant. The polishing composition can be suitably used in applications for polishing a silicon wafer.

摘要翻译： 抛光组合物包括二氧化硅，碱性化合物，阴离子表面活性剂和水。 二氧化硅是例如胶体二氧化硅，热解二氧化硅或沉淀二氧化硅。 碱性化合物是例如氢氧化钾，氢氧化钠，氨，四甲基氢氧化铵，哌嗪酸酐或哌嗪六水合物。 阴离子表面活性剂是选自磺酸表面活性剂，羧酸表面活性剂和硫酸酯表面活性剂中的至少一种。 抛光组合物可以适用于抛光硅晶片的应用。

公开(公告)号：US20060151854A1

公开(公告)日：2006-07-13

申请号：US10533888

申请日：2003-11-07

申请人： Akihiro Kawase ,  Toshihiro Miwa ,  Kenji Sakamoto ,  Ichiro Hayashida

发明人： Akihiro Kawase ,  Toshihiro Miwa ,  Kenji Sakamoto ,  Ichiro Hayashida

IPC分类号： H01L29/30

CPC分类号： H01L21/02024 ,  C09G1/02 ,  C09K3/1463 ,  C11D7/20 ,  C11D7/36 ,  C11D11/0047 ,  H01L21/02052

摘要： A polishing composition and a rinsing composition according to the present invention can effectively suppress wafer contamination caused by metal impurities. The polishing composition includes a chelating agent, an alkali compound, silicon dioxide and water. The rinsing composition includes a chelating agent, an alkali compound and water. The chelating agent contained in the polishing composition and the rinsing composition is an acid represented by the following chemical formula (1) or a salt thereof. In the chemical formula (1), each of Y2 and Y3 represents an alkylene group, n is an integer of 0 to 4, each of 4+n substituents represented by R8 to R12 is an alkyl group. At least four of the alkyl groups have a phosphonic acid group.

摘要翻译： 根据本发明的抛光组合物和漂洗组合物可以有效地抑制由金属杂质引起的晶片污染。 抛光组合物包括螯合剂，碱性化合物，二氧化硅和水。 漂洗组合物包括螯合剂，碱性化合物和水。 抛光组合物和漂洗组合物中所含的螯合剂是由下列化学式（1）表示的酸或其盐。 在化学式（1）中，Y 2和Y 3各自表示亚烷基，n表示0〜4的整数，表示4 + n个取代基 由R 8至R 12是烷基。 至少四个烷基具有膦酸基团。

公开(公告)号：US07481949B2

公开(公告)日：2009-01-27

申请号：US10533888

申请日：2003-11-07

申请人： Akihiro Kawase ,  Toshihiro Miwa ,  Kenji Sakamoto ,  Ichiro Hayashida

发明人： Akihiro Kawase ,  Toshihiro Miwa ,  Kenji Sakamoto ,  Ichiro Hayashida

IPC分类号： C09K13/00 ,  H01L21/302

CPC分类号： H01L21/02024 ,  C09G1/02 ,  C09K3/1463 ,  C11D7/20 ,  C11D7/36 ,  C11D11/0047 ,  H01L21/02052

摘要： A polishing composition and a rinsing composition according to the present invention can effectively suppress wafer contamination caused by metal impurities. The polishing composition includes a chelating agent, an alkali compound, silicon dioxide and water. The rinsing composition includes a chelating agent, an alkali compound and water. The chelating agent contained in the polishing composition and the rinsing composition is an acid represented by the following chemical formula (1) or a salt thereof. In the chemical formula (1), each of Y2 and Y3 represents an alkylene group, n is an integer of 0 to 4, each of 4+n substituents represented by R8 to R12 is an alkyl group. At least four of the alkyl groups have a phosphonic acid group.

摘要翻译： 根据本发明的抛光组合物和漂洗组合物可以有效地抑制由金属杂质引起的晶片污染。 抛光组合物包括螯合剂，碱性化合物，二氧化硅和水。 漂洗组合物包括螯合剂，碱性化合物和水。 抛光组合物和漂洗组合物中所含的螯合剂是由下列化学式（1）表示的酸或其盐。 在化学式（1）中，Y2和Y3各自表示亚烷基，n为0〜4的整数，由R8〜R12表示的4 + n个取代基分别为烷基。 至少四个烷基具有膦酸基团。