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    Photo video camera device
    1.
    发明授权
    Photo video camera device 失效
    摄影摄像机设备

    公开(公告)号：US5218439A

    公开(公告)日：1993-06-08

    申请号：US819773

    申请日：1992-01-13

    申请人： Motoshi Mizoguchi ,  Tetsuya Yagi ,  Kenichi Hamano ,  Toshio Tomiyoshi ,  Masami Torizuka ,  Mitsuru Hachiya ,  Kaneharu Nemoto

    发明人： Motoshi Mizoguchi ,  Tetsuya Yagi ,  Kenichi Hamano ,  Toshio Tomiyoshi ,  Masami Torizuka ,  Mitsuru Hachiya ,  Kaneharu Nemoto

    IPC分类号： G03B33/00 ,  H04N1/028 ,  H04N1/195 ,  H04N5/225 ,  H04N5/253

    CPC分类号： H04N1/19594 ,  H04N1/028 ,  H04N1/195 ,  H04N5/2253 ,  H04N5/2259 ,  H04N2201/0404 ,  H04N2201/0432

    摘要： A photo video camera device for photographing a visible image on a negative film and/or a positive film developed. The photo video camera device includes a lens barrel, a solid-state image pickup device fixed to the lens barrel, a rotating mechanism for rotating the lens barrel with the solid-state image pickup device, and a supporting member for supporting the lens barrel with the solid-state image pickup device so that the lens barrel and the solid-state image pickup device are rotatable together relative to the supporting member by the rotating mechanism. Accordingly, there occurs no misalignment of axes between a lens system retained in the lens barrel and the solid-state image pickup device, and no dust or the like sticks to the lens system and the solid-state image pickup device.

    摘要翻译： 用于拍摄负片上的可见图像和/或正片的照相摄像机装置。 照相摄像机装置包括透镜镜筒，固定在透镜镜筒上的固态摄像装置，用固态摄像装置旋转透镜镜筒的旋转机构，以及用于支撑透镜镜筒的支撑部件， 固态图像拾取装置，使得透镜筒和固态图像拾取装置可通过旋转机构相对于支撑构件一起旋转。 因此，保持在镜筒中的透镜系统与固态图像拾取装置之间的轴线不发生偏移，并且没有灰尘等粘附到透镜系统和固态图像拾取装置。

    FILM THICKNESS MEASUREMENT METHOD
    3.
    发明申请
    FILM THICKNESS MEASUREMENT METHOD 有权
    薄膜厚度测量方法

    公开(公告)号：US20140239181A1

    公开(公告)日：2014-08-28

    申请号：US14346306

    申请日：2011-10-26

    申请人： Ryo Hattori ,  Kenichi Hamano

    发明人： Ryo Hattori ,  Kenichi Hamano

    IPC分类号： G01B11/06 ,  G01B9/02

    CPC分类号： G01B11/06 ,  G01B9/02044 ,  G01B9/02084 ,  G01B11/0625

    摘要： A measurement target including a semiconductor substrate, and a first epitaxial layer and a second epitaxial layer stacked in this order on the semiconductor substrate and having no difference in refractive index of a real part from the semiconductor substrate is subjected to reflection interference analysis using a Fourier transform infrared spectroscopy. The thickness of the first epitaxial layer is used as a fitting parameter so as to prevent shift between an interference waveform of a resultant reflection interference pattern containing distortion appearing in a wave number range near an abnormal dispersion range of a refractive index caused by phonon absorption and an interference waveform of a numerically calculated reflection interference pattern in the same wave number range. The thickness of the first epitaxial layer determined during the fitting of the numerically calculated reflection interference pattern is defined as a measured value of the thickness of the first epitaxial layer.

    摘要翻译： 在半导体基板上依次层叠半导体衬底以及第一外延层和第二外延层，并且与半导体衬底的实部折射率无差异的测量对象，使用傅里叶 转换红外光谱。 使用第一外延层的厚度作为拟合参数，以便防止出现在由声子吸收引起的折射率的异常色散范围附近的波数范围内出现的失真的合成反射干涉图案的干涉波形与第 在相同波数范围内的数值计算的反射干涉图案的干涉波形。 在将数值计算的反射干涉图案拟合期间确定的第一外延层的厚度定义为第一外延层的厚度的测量值。

    Method for manufacturing silicon carbide semiconductor device
    5.
    发明授权
    Method for manufacturing silicon carbide semiconductor device 有权
    制造碳化硅半导体器件的方法

    公开(公告)号：US08569106B2

    公开(公告)日：2013-10-29

    申请号：US13148537

    申请日：2010-02-15

    申请人： Kenichi Hamano ,  Kenichi Ohtsuka ,  Nobuyuki Tomita ,  Masayoshi Tarutani

    发明人： Kenichi Hamano ,  Kenichi Ohtsuka ,  Nobuyuki Tomita ,  Masayoshi Tarutani

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7802 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7828 ,  H01L29/872

    摘要： A film of an epitaxial layer that allows the reduction in both the height of a bunching step and crystal defects caused by a failure in migration of reactive species on a terrace is formed on a SiC semiconductor substrate having an off angle of 5 degrees or less. A film of a first-layer epitaxial layer is formed on and in contact with a surface of the SiC semiconductor substrate having an off angle of 5 degrees or less. Subsequently, the temperature in a reactor is lowered. A second-layer epitaxial layer is caused to epitaxially grow on and in contact with a surface of the first-layer epitaxial layer. In the above-described manner, the epitaxial layer is structured with two layers, and the growth temperature for the second epitaxial layer is set lower than the growth temperature for the first epitaxial layer.

    摘要翻译： 在偏离角度为5度以下的SiC半导体基板上，形成外延层的薄膜，该外延层能够降低聚束步骤的高度，并且由于活性物质在平台上的迁移失败而导致的晶体缺陷。 第一层外延层的膜形成在具有5度或更小的偏离角的SiC半导体衬底的表面上并与之接触。 随后，反应器中的温度降低。 使第二层外延层在第一层外延层的表面上外延生长并与其接触。 以上述方式，外延层由两层构成，第二外延层的生长温度被设定为低于第一外延层的生长温度。

    METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE 有权
    制造碳化硅半导体器件的方法

    公开(公告)号：US20110312161A1

    公开(公告)日：2011-12-22

    申请号：US13148537

    申请日：2010-02-15

    申请人： Kenichi Hamano ,  Kenichi Ohtsuka ,  Nobuyuki Tomita ,  Masayoshi Tarutani

    发明人： Kenichi Hamano ,  Kenichi Ohtsuka ,  Nobuyuki Tomita ,  Masayoshi Tarutani

    IPC分类号： H01L21/20

    CPC分类号： H01L29/7802 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02447 ,  H01L21/02529 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/0878 ,  H01L29/1608 ,  H01L29/6606 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7828 ,  H01L29/872

    摘要： A film of an epitaxial layer that allows the reduction in both the height of a bunching step and crystal defects caused by a failure in migration of reactive species on a terrace is formed on a SiC semiconductor substrate having an off angle of 5 degrees or less. A film of a first-layer epitaxial layer is formed on and in contact with a surface of the SiC semiconductor substrate having an off angle of 5 degrees or less. Subsequently, the temperature in a reactor is lowered. A second-layer epitaxial layer is caused to epitaxially grow on and in contact with a surface of the first-layer epitaxial layer. In the above-described manner, the epitaxial layer is structured with two layers, and the growth temperature for the second epitaxial layer is set lower than the growth temperature for the first epitaxial layer.

    摘要翻译： 在偏离角度为5度以下的SiC半导体基板上，形成外延层的薄膜，该外延层能够降低聚束步骤的高度，并且由于活性物质在平台上的迁移失败而导致的晶体缺陷。 第一层外延层的膜形成在具有5度或更小的偏离角的SiC半导体衬底的表面上并与之接触。 随后，反应器中的温度降低。 使第二层外延层在第一层外延层的表面上外延生长并与其接触。 以上述方式，外延层由两层构成，第二外延层的生长温度被设定为低于第一外延层的生长温度。

    Film thickness measurement method
    7.
    发明授权
    Film thickness measurement method 有权
    薄膜厚度测量方法

    公开(公告)号：US09400172B2

    公开(公告)日：2016-07-26

    申请号：US14346306

    申请日：2011-10-26

    申请人： Ryo Hattori ,  Kenichi Hamano

    发明人： Ryo Hattori ,  Kenichi Hamano

    IPC分类号： G01B11/06 ,  G01B9/02

    CPC分类号： G01B11/06 ,  G01B9/02044 ,  G01B9/02084 ,  G01B11/0625

    摘要： A measurement target including a semiconductor substrate, and a first epitaxial layer and a second epitaxial layer stacked in this order on the semiconductor substrate and having no difference in refractive index of a real part from the semiconductor substrate is subjected to reflection interference analysis using a Fourier transform infrared spectroscopy. The thickness of the first epitaxial layer is used as a fitting parameter so as to prevent shift between an interference waveform of a resultant reflection interference pattern containing distortion appearing in a wave number range near an abnormal dispersion range of a refractive index caused by phonon absorption and an interference waveform of a numerically calculated reflection interference pattern in the same wave number range. The thickness of the first epitaxial layer determined during the fitting of the numerically calculated reflection interference pattern is defined as a measured value of the thickness of the first epitaxial layer.

    摘要翻译： 在半导体基板上依次层叠半导体衬底以及第一外延层和第二外延层，并且与半导体衬底的实部折射率无差异的测量对象，使用傅里叶 转换红外光谱。 使用第一外延层的厚度作为拟合参数，以便防止出现在由声子吸收引起的折射率的异常色散范围附近的波数范围内出现的失真的合成反射干涉图案的干涉波形与第 在相同波数范围内的数值计算的反射干涉图案的干涉波形。 在将数值计算的反射干涉图案拟合期间确定的第一外延层的厚度定义为第一外延层的厚度的测量值。