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    Method and apparatus for manufacturing single-crystal ingot
    1.
    发明授权
    Method and apparatus for manufacturing single-crystal ingot 有权
    制造单晶锭的方法和装置

    公开(公告)号：US06858076B1

    公开(公告)日：2005-02-22

    申请号：US09569086

    申请日：2000-05-10

    申请人： Hirotaka Nakajima ,  Toshirou Kotooka ,  Yoshiyuki Shimanuki ,  Hiroshi Inagaki ,  Shigeki Kawashima ,  Makoto Kamogawa

    发明人： Hirotaka Nakajima ,  Toshirou Kotooka ,  Yoshiyuki Shimanuki ,  Hiroshi Inagaki ,  Shigeki Kawashima ,  Makoto Kamogawa

    IPC分类号： C30B15/14 ,  C30B29/06 ,  C30B13/30

    CPC分类号： C30B15/14 ,  C30B29/06 ,  Y10T117/1032 ,  Y10T117/1068

    摘要： There are provided a system for manufacturing a single-crystal ingot which is equipped with a cooler for cooling the single-crystal ingot being pulled and is capable of forming a tail without involvement of excessive heating of a crucible, as well as to a method for controlling the system. In a system for manufacturing a single-crystal ingot having a cooler for cooling a single-crystal ingot which is being pulled from molten raw material (called a single-crystal pulled ingot), when a tail of the single-crystal pulled ingot is formed, the cooler is moved away from the solid/melt interface between the single-crystal ingot and the molten raw material, to thereby reduce the power dissipated by the system. In the system, the cooler is moved upward after the end of a product area of the single-crystal ingot has been cooled until it passes through a grown-in defect temperature range.

    摘要翻译： 提供了一种用于制造单晶锭的系统，其具有用于冷却被拉动的单晶锭的冷却器，并且能够形成尾部而不涉及坩埚的过度加热，以及用于 控制系统。 在用于制造用于冷却从熔融原料（称为单晶拉锭）中拉出的单晶锭的冷却器的单晶锭的系统中，当形成单晶拉晶锭的尾部时 ，将冷却器从单晶锭和熔融原料之间的固体/熔融界面移开，从而减少系统消耗的功率。 在系统中，冷却器在单晶锭的产品区域结束已经被冷却直到其通过生长的缺陷温度范围之后向上移动。

    Device for manufacturing single crystals
    2.
    发明授权
    Device for manufacturing single crystals 有权
    单晶制造装置

    公开(公告)号：US6117402A

    公开(公告)日：2000-09-12

    申请号：US287232

    申请日：1999-04-06

    申请人： Toshirou Kotooka ,  Yoshiyuki Shimanuki ,  Makoto Kamogawa

    发明人： Toshirou Kotooka ,  Yoshiyuki Shimanuki ,  Makoto Kamogawa

    IPC分类号： C30B15/00 ,  C30B15/14 ,  H01L21/208 ,  B01D9/00 ,  C30B35/00

    CPC分类号： C30B15/14 ,  Y10T117/1068

    摘要： This invention provides a device for manufacturing single crystals provided with an after-cooler that causes an abrupt temperature gradient along the axis of the crystal being lifted. The device according to this invention can further increase the lifting speed of single crystals. The after-cooler (4) is disposed between the single crystal (5) being lifted and the heat-shield plate (1). Both the inner surface facing the single crystal (5) and the outer surface facing the heat-shield plate (1) of the after-cooler have a surface emissivity value larger than 0.6. Furthermore, the after-cooler (4) is made of cooling pipes or cooling jackets, and the surfaces of the after-cooler (4) are treated by oxidizing or nitriding so as to increase their emissivity values.

    摘要翻译： 本发明提供一种用于制造单晶的装置，该装置具有沿着被提升的晶体的轴线的突然温度梯度的后冷却器。 根据本发明的装置可以进一步提高单晶的提升速度。 后冷却器（4）设置在被提升的单晶（5）和隔热板（1）之间。 面向单晶（5）的内表面和与后冷却器的隔热板（1）相对的外表面都具有大于0.6的表面发射率值。 此外，后冷却器（4）由冷却管或冷却夹套构成，后冷却器（4）的表面通过氧化或氮化进行处理，以提高其发射率值。

    Apparatus for fabricating single-crystal silicon
    3.
    发明授权
    Apparatus for fabricating single-crystal silicon 失效
    单晶硅制造装置

    公开(公告)号：US6071341A

    公开(公告)日：2000-06-06

    申请号：US861340

    申请日：1997-05-21

    申请人： Yoshiyuki Shimanuki ,  Toshimichi Kubota ,  Toshirou Kotooka ,  Makoto Kamogawa

    发明人： Yoshiyuki Shimanuki ,  Toshimichi Kubota ,  Toshirou Kotooka ,  Makoto Kamogawa

    IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06 ,  H01L21/208

    CPC分类号： C30B29/06 ,  C30B15/206 ,  Y10T117/1004 ,  Y10T117/1032 ,  Y10T117/1068 ,  Y10T117/1072

    摘要： An apparatus for fabricating single-crystal silicon easily controlling a temperature gradient based on the Czochralski (CZ) method, and more particularly preventing as-grown defects created in order to obtain high-quality single-crystal silicon.The above-mentioned apparatus includes a first thermal shield member surrounding the pulling single-crystal silicon and a second thermal shield member inside the first thermal shield member, surrounding the pulling single-crystal silicon. The second thermal shield member is fixed on the first thermal shield member by a support located on the external surface of the second thermal shield member and connected to the first thermal shield member. The surroundings of a solid-liquid interface are extremely cooled by using the first thermal shield member, thereby a stable shape of the single-crystal silicon is formed. The temperature gradient of the temperature region of 1000.degree. C..about.1200.degree. C. where the single-crystal silicon passes is decreased by using the second thermal shield member so as to reduce the crystal defect density, thereby obtaining single-crystal silicon having a stronger oxide film voltage breakdown characteristic. If the support length is changed, the second thermal shield member can be adjusted in the upper or lower direction in order to make the expected portion of single-crystal silicon cool slowly.

    摘要翻译： 一种用于制造单晶硅的装置，其基于切克劳斯基（CZ）方法容易地控制温度梯度，更特别地防止为获得高质量单晶硅而产生的生长缺陷。 上述装置包括围绕牵引单晶硅的第一热屏蔽构件和围绕拉出单晶硅的第一热屏蔽构件内的第二热屏蔽构件。 第二热屏蔽构件通过位于第二热屏蔽构件的外表面上的支撑件固定在第一热屏蔽构件上，并连接到第一热屏蔽构件。 通过使用第一热屏蔽部件，固体 - 液体界面的周围环境极其冷却，从而形成单晶硅的稳定形状。 通过使用第二热屏蔽部件降低单晶硅通过的1000℃的温度区域的温度梯度，从而降低晶体缺陷密度，由此获得具有 更强的氧化膜电压击穿特性。 如果支撑长度改变，则可以在上或下方向上调节第二热屏蔽构件，以使单晶硅的预期部分缓慢地冷却。

    Apparatus for manufacturing semiconductor single crystals
    4.
    发明授权
    Apparatus for manufacturing semiconductor single crystals 失效
    半导体单晶制造装置

    公开(公告)号：US5935326A

    公开(公告)日：1999-08-10

    申请号：US975678

    申请日：1997-11-21

    申请人： Toshirou Kotooka ,  Toshimichi Kubota ,  Makoto Kamogawa ,  Yoshiyuki Shimanuki

    发明人： Toshirou Kotooka ,  Toshimichi Kubota ,  Makoto Kamogawa ,  Yoshiyuki Shimanuki

    IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B29/06 ,  H01L21/208 ,  C30B35/00

    CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    摘要： An cylindrical after-heater surrounding a single crystal being lifted and a cylindrical heat-retaining cylinder installed between the after-heater and the single crystal are provided above a reversed frustrated heat-shielding sleeve disposed near the melted liquid. The heat history of the single crystal can be controlled by adjusting the output of the after-heater and the location of the heat-retaining cylinder. By such an arrangement, rapid respond to the change of the heat environment in a furnace can be made and control of the temperature gradient of the single crystal can be achieved. The single crystal, throughout the whole length, is maintained in the range of from 1000.degree. C. to 1200.degree. C. for more than one hour during lifting operation.

    摘要翻译： 围绕提升的单晶的圆柱形后置加热器和安装在后加热器和单晶之间的圆柱形保温筒设置在设置在熔融液体附近的反向受热的热屏蔽套筒的上方。 可以通过调节后加热器的输出和保温筒的位置来控制单晶的热历史。 通过这样的布置，可以快速响应炉中的热环境的变化，并且可以实现单晶温度梯度的控制。 整个长度的单晶在提升操作期间保持在1000℃至1200℃的范围内超过1小时。

    Method and apparatus for fabricating semiconductor single crystal
    5.
    发明授权
    Method and apparatus for fabricating semiconductor single crystal 失效
    制造半导体单晶的方法和装置

    公开(公告)号：US5900059A

    公开(公告)日：1999-05-04

    申请号：US59770

    申请日：1998-04-14

    申请人： Yoshiyuki Shimanuki ,  Toshimichi Kubota ,  Toshirou Kotooka ,  Makoto Kamogawa

    发明人： Yoshiyuki Shimanuki ,  Toshimichi Kubota ,  Toshirou Kotooka ,  Makoto Kamogawa

    IPC分类号： C30B15/14 ,  C30B35/00

    CPC分类号： C30B15/14 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    摘要： This invention provides a method and apparatus for fabricating semiconductor single crystals. By using the method of this invention, the temperature gradient of the single crystal being lifted can be easily controlled. The as-grown defect density can be reduced, and it is possible to manufacture high quality semiconductor single crystals with high oxidation-film breakdown strength. A shield cylinder is used for surrounding the semiconductor single crystal 7 being lifted, the shield cylinder is made to be of the telescopic type and consists of a first shield duct 4, a second shield duct 5, a third shield duct 6. A wire 8 wrapping around a wind-up reel 10 is engaged with the third shield duct 6, and the shield cylinder can be driven to extend or retract by rotating the wind-up reel 10. An ascend and descend rod 3 is connected with the first duct 4, and the shield cylinder can be driven to move upward or downward by lifting or lowering the ascend and descend rod 3. The wind-up reel 10 is driven to retract part of the shield cylinder so that the lapped portion of the shield cylinder keeps a predetermined portion of the semiconductor single crystal 7 being lifted warm, and the temperature gradient of the semiconductor single crystal 7 can be reduced when it passes through the zone whose temperature is within a range from 1000.degree. C. to 1200.degree. C.

    摘要翻译： 本发明提供一种制造半导体单晶的方法和装置。 通过使用本发明的方法，可以容易地控制提升的单晶的温度梯度。 可以降低生长中的缺陷密度，并且可以制造具有高氧化膜击穿强度的高质量半导体单晶。 屏蔽筒用于围绕被提升的半导体单晶7，屏蔽筒制成伸缩型，由第一屏蔽导管4，第二屏蔽导管5，第三屏蔽导管6组成。导线8 绕卷绕卷轴10缠绕在第三屏蔽管道6上，并且可以通过旋转卷绕卷轴10来驱动屏蔽筒来延伸或缩回。上升杆3和下降杆3与第一管道4连接 ，并且可以通过升降上升杆3来驱动屏蔽筒向上或向下移动。卷绕卷轴10被驱动以使屏蔽筒的一部分缩回，使得屏蔽筒的重叠部分保持 半导体单晶7的预定部分被升温，并且当半导体单晶7的温度在1000℃至1200℃的范围内时，可以降低半导体单晶7的温度梯度。

    Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer
    9.
    发明授权
    Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon crystal wafer 有权
    单晶硅的制造方法和单晶锭的制造装置以及硅晶片的热处理方法

    公开(公告)号：US07141113B1

    公开(公告)日：2006-11-28

    申请号：US09856212

    申请日：1999-11-19

    申请人： Kozo Nakamura ,  Toshiaki Saishoji ,  Hirotaka Nakajima ,  Shinya Sadohara ,  Masashi Nishimura ,  Toshirou Kotooka ,  Yoshiyuki Shimanuki

    发明人： Kozo Nakamura ,  Toshiaki Saishoji ,  Hirotaka Nakajima ,  Shinya Sadohara ,  Masashi Nishimura ,  Toshirou Kotooka ,  Yoshiyuki Shimanuki

    IPC分类号： C30B33/02

    CPC分类号： C30B29/06 ,  C30B15/14 ,  C30B15/203 ,  C30B15/206

    摘要： A method for growing a silicon crystal by a Czochralsky method, wherein, let a pulling speed be V (mm/min) and an average value of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., be G (° C./mm), V/G ranges from 0.16 to 0.18 mm2/° C. min between a crystal center position and a crystal outer periphery position, and a ratio G outer/G center of an average value G of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., at a crystal outer surface to that at a crystal center is set to up to 1.10 to thereby obtain a high-quality perfect crystal silicon wafer. Such a perfect crystal silicon wafer, wherein an oxygen concentration is controlled to up to 13×1017 atoms/cm3, an initial heat treatment temperature is at least up to 500° C. and a temperature is raised at up to 1° C./min at least within 700 to 900° C., thereby making uniform a wafer radial distribution to an arbitrary oxygen precipitation density level.

    摘要翻译： 一种通过切克劳斯基法生长硅晶体的方法，其中，拉伸速度为V（mm / min），拉伸轴方向的晶体内温度梯度的平均值在温度范围内，硅熔点 至1350℃，为G（℃/ mm），V / G在晶体中心位置和晶体外周位置之间的范围为0.16至0.18mm 2 /℃， 以及在温度范围内的牵引轴方向的晶体内温度梯度的平均值G的比G外部/ G中心，硅熔点为1350℃，晶体外表面与晶体的晶体温度梯度 中心设置为1.10，从而获得高质量的完美晶体硅晶片。 这种完美的晶体硅晶片，其中氧浓度被控制到高达13×10 17原子/ cm 3，初始热处理温度至少高达500℃ 并且在至少在700至900℃之间将温度升至高达1℃/分钟，从而使得晶片的径向分布均匀到任意的氧析出浓度水平。