利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

14 条记录 (耗时 0.022 秒)

    The method for producing an Al-stabilized superconducting wire
    1.
    发明授权
    The method for producing an Al-stabilized superconducting wire 失效
    制造Al稳定超导线的方法

    公开(公告)号：US4659007A

    公开(公告)日：1987-04-21

    申请号：US666632

    申请日：1984-10-31

    申请人： Toshitada Onishi ,  Hiroshi Tateishi ,  Kenichi Koyama ,  Shigeo Saito ,  Masayuki Nagata

    发明人： Toshitada Onishi ,  Hiroshi Tateishi ,  Kenichi Koyama ,  Shigeo Saito ,  Masayuki Nagata

    IPC分类号： H01B5/08 ,  H01L39/14 ,  H01L39/24

    CPC分类号： H01B12/08 ,  H01L39/14 ,  Y02E40/641 ,  Y10S505/887 ,  Y10S505/927 ,  Y10S505/93 ,  Y10T29/49014

    摘要： A method for producing an aluminum-stabilized superconducting wire is dislcosed herein, which comprises alternately winding superconducting elementary wires and high purity wires around a core, such as an electrically insulated copper wire core, impregnating the entire wire arrangement with solder to bind the wires together and subsequently forming or drawing the wire arrangement to increase the adhesion between the wires. In another embodiment, the thus-impregnated wire arrangement is subjected to a heat treatment to recover the residual resistance ratio of the aluminum. The impregnated wire arrangement is characterized by having a high mechanical toughness and improved electrical contact for greater electrical stability.

    摘要翻译： 本发明涉及一种用于在诸如脉冲磁体等的充电磁场中使用的超导磁体中的Al稳定超导线材，特别涉及具有尺寸减小和重量轻的特性的Al稳定超导线材， 高电流密度，高稳定性，低AC损耗等，及其制造方法。 所述Al稳定超导线具有选自超导基本线，电绝缘Cu或Cu合金或非磁性金属或其合金的芯，并且其中超导基本线和高纯度Al线交替地围绕所述 核心。 绞合的电缆通过用焊料浸渍而进行接合，或者进一步经受还原处理和热处理，从而可以获得具有所述高性能的铝稳定的超导线。

    Al-stabilized superconducting wire and the method for producing the same
    2.
    发明授权
    Al-stabilized superconducting wire and the method for producing the same 失效
    铝稳定超导线及其制造方法

    公开(公告)号：US4506109A

    公开(公告)日：1985-03-19

    申请号：US382363

    申请日：1982-05-26

    申请人： Toshitada Onishi ,  Hiroshi Tateishi ,  Kenichi Koyama ,  Shigeo Saito ,  Masayuki Nagata

    发明人： Toshitada Onishi ,  Hiroshi Tateishi ,  Kenichi Koyama ,  Shigeo Saito ,  Masayuki Nagata

    IPC分类号： H01B5/08 ,  H01L39/14 ,  H01B12/00

    CPC分类号： H01B12/08 ,  H01L39/14 ,  Y02E40/641 ,  Y10S505/887 ,  Y10S505/927 ,  Y10S505/93 ,  Y10T29/49014

    摘要： The invention relates an Al-stabilized superconducting wire for use in a superconducting magnet used in a charging magnetic field, such as a pulse magnet and the like, and particularly to an Al-stabilized superconducting wire having the properties of reduced size and light weight, high current density, high stability, low AC loss, etc., and a method for producing the same. The said Al-stabilized superconducting wire has a core chosen from a superconducting elementary wire, an electrically insulated Cu or a Cu alloy, or a nonmagnetic metal or alloys thereof, and wherein the superconducting elementary wires and high purity Al wires are alternately stranded around said core. The stranded cable is bonded by impregnating it with solder, or further by subjecting it to a reduction process and heat treatment thereby making it possible to obtain an aluminum stabilized superconducting wire having said high properties.

    摘要翻译： 本发明涉及一种用于在诸如脉冲磁体等的充电磁场中使用的超导磁体中的Al稳定超导线材，特别涉及具有尺寸减小和重量轻的特性的Al稳定超导线材， 高电流密度，高稳定性，低AC损耗等，及其制造方法。 所述Al稳定超导线具有选自超导基本线，电绝缘Cu或Cu合金或非磁性金属或其合金的芯，并且其中超导基本线和高纯度Al线交替地围绕所述 核心。 绞合的电缆通过用焊料浸渍而进行接合，或者进一步经受还原处理和热处理，从而可以获得具有所述高性能的铝稳定的超导线。

    Method of manufacturing Al-stabilized superconductor
    3.
    发明授权
    Method of manufacturing Al-stabilized superconductor 失效
    制造Al稳定超导体的方法

    公开(公告)号：US4537642A

    公开(公告)日：1985-08-27

    申请号：US571761

    申请日：1984-01-18

    申请人： Shigeo Saito ,  Masayuki Nagata

    发明人： Shigeo Saito ,  Masayuki Nagata

    IPC分类号： H01B12/10 ,  H01B13/00 ,  H01L39/24 ,  H01B12/00

    CPC分类号： H01L39/2403 ,  Y10S505/806 ,  Y10S505/815 ,  Y10S505/928 ,  Y10T29/49014

    摘要： A method of manufacturing an Al-stabilized superconductor is disclosed. The method comprises combining into a composite a thin elongated Al member and a superconductive wire. The Al member is preferably comprised of high purity Al having a purity of not less than 99.9% and the superconductive wire is comprised of copper or a copper alloy matrix. The method produces a composite with strong adhesion between the Al member and the superconductive wire even under adverse conditions. Further, the method can be easily and quickly carried out.

    摘要翻译： 公开了一种制造Al稳定超导体的方法。 该方法包括将细长的Al构件和超导导线组合成复合材料。 Al成分优选由纯度不低于99.9％的高纯度Al组成，超导线由铜或铜合金基体构成。 该方法即使在不利的条件下也产生了Al构件和超导线之间具有很强粘附性的复合材料。 此外，该方法可以容易且快速地进行。

    Seismic response controlled frame of bending deformation control type
    6.
    发明授权
    Seismic response controlled frame of bending deformation control type 失效
    地震反应控制框架的弯曲变形控制型

    公开(公告)号：US5671569A

    公开(公告)日：1997-09-30

    申请号：US564408

    申请日：1995-11-29

    申请人： Takuji Kobori ,  Yukihiro Omika ,  Masayuki Nagata ,  Jun Okawa ,  Yukimasa Yamamoto

    发明人： Takuji Kobori ,  Yukihiro Omika ,  Masayuki Nagata ,  Jun Okawa ,  Yukimasa Yamamoto

    IPC分类号： E04H9/02 ,  E04B1/98

    CPC分类号： E04H9/021 ,  E04H2009/026

    摘要： In a multi-storied frame building, a controlled frame member having means to damp seismic forces of deformation. A first vertical wall column has a top connected to a horizontal wall girder overhanging the wall column. A second wall column is erected in vertical alignment beneath the tip end of the wall girder co-planar with, but spaced from, the first wall column. A seismic response control apparatus connected between the tip end of the wall girder and the top of the second wall column generates damping force when the tip end of the wall girder and the top of the second wall column are displaced relative to each other. Additional girders are arranged on lower stories of the building as required to further strengthen the building against seismic deformation.

    摘要翻译： 在多层框架建筑中，受控的框架构件具有减轻变形地震力的装置。 第一垂直壁柱具有顶部连接到悬垂在壁柱上的水平壁梁。 第二壁柱竖立在垂直对齐在与同一第一壁柱共同平行的壁梁的顶端下方。 连接在壁梁的顶端和第二壁塔的顶部之间的地震响应控制装置在壁梁的顶端和第二壁柱的顶部相对于彼此移位时产生阻尼力。 额外的大梁被安排在建筑物的低层上，以进一步加强建筑物抵抗地震变形。

    Process for fabricating semiconductor device and photolithography mask
    7.
    发明授权
    Process for fabricating semiconductor device and photolithography mask 有权
    制造半导体器件和光刻掩模的工艺

    公开(公告)号：US06440802B1

    公开(公告)日：2002-08-27

    申请号：US09940060

    申请日：2001-08-28

    申请人： Keiji Hayashi ,  Masayuki Nagata

    发明人： Keiji Hayashi ,  Masayuki Nagata

    IPC分类号： H01L218238

    CPC分类号： H01L21/2652 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823481

    摘要： A process for fabricating a semiconductor device including MOS transistors of low breakdown voltage type and of high breakdown voltage type provided on a semiconductor substrate, the MOS transistor of high breakdown voltage type being operative at a higher voltage than the MOS transistor of low breakdown voltage type and having drift diffusion regions, the process comprises the steps of: forming a LOCOS oxide film on the semiconductor substrate; and performing ion implantation with the use of a single mask having openings respectively defining on the substrate a first region for formation of a first conductivity type MOS transistor of low breakdown voltage type, a second region in which the LOCOS oxide film is formed for isolation of a first conductivity type MOS transistor of high breakdown voltage type, and a third region for formation of a drift diffusion region of a second conductivity type MOS transistor of high breakdown voltage type, so that the first and third regions each have at least two concentration peaks of implanted ions at different depths in the semiconductor substrate, and the second region has a concentration peak of implanted ions in the vicinity of an interface between the LOCOS oxide film and the semiconductor substrate.

    摘要翻译： 一种制造半导体器件的方法，该半导体器件包括设置在半导体衬底上的具有低击穿电压型和高击穿电压型的MOS晶体管，高耐电压型MOS晶体管在比低击穿电压型MOS晶体管更高的电压下工作 并具有漂移扩散区域，该方法包括以下步骤：在半导体衬底上形成LOCOS氧化物膜; 以及使用具有分别限定在所述衬底上的开口的单个掩模进行离子注入，所述第一区域用于形成低击穿电压型的第一导电型MOS晶体管的第一区域，其中形成所述LOCOS氧化物膜以隔离 高击穿电压型的第一导电型MOS晶体管和用于形成高击穿电压型的第二导电型MOS晶体管的漂移扩散区域的第三区域，使得第一和第三区域各自具有至少两个浓度峰 的注入离子在半导体衬底中的不同深度处，并且第二区域具有在LOCOS氧化物膜和半导体衬底之间的界面附近的注入离子的浓度峰值。

    Remote controller
    8.
    发明申请
    Remote controller 失效
    遥控器

    公开(公告)号：US20060076220A1

    公开(公告)日：2006-04-13

    申请号：US11213988

    申请日：2005-08-30

    申请人： Hiroyasu Fukaya ,  Masayuki Nagata ,  Masato Wakabayashi ,  Sadaaki Shichino ,  Hiroshi Okazaki ,  Tomohiko Taki

    发明人： Hiroyasu Fukaya ,  Masayuki Nagata ,  Masato Wakabayashi ,  Sadaaki Shichino ,  Hiroshi Okazaki ,  Tomohiko Taki

    IPC分类号： H01H19/00

    CPC分类号： E03C1/055 ,  E03D5/105 ,  H01H9/0235 ,  H01H2221/088 ,  H03K17/965

    摘要： A remote controller 1 is capable of achieving switching operation even when the user presses substantially any place of a switch. A toilet seat open/close switch 12 has a tiltable member 20 which is tiltably supported at its front lower portion to an upper portion of a main body 2, a switch body 30 which is pressed by the tiltable member 20 when the tiltable member 20 tilts, and a cap 40 which is mounted to the upper portion of the main body 2 such that the cap 40 can be freely displaced in the anteroposterior direction and the vertical direction. The tiltable member 20 is disposed in a cavity 41 formed inside the cap 40. As the cap 40 is pressed from front or from above, the tiltable member 20 is pressed by the cap 40 to tilt, whereby the switch body 30 conducts the switching action.

    摘要翻译： 遥控器1即使当用户基本上按压开关的任何位置时也能够实现切换操作。 马桶座圈打开/关闭开关12具有可倾斜的构件20，该倾斜构件20在其前下部可倾斜地支撑到主体2的上部;开关体30，当可倾斜构件20倾斜时被可倾斜构件20按压 以及安装到主体2的上部的帽40，使得帽40能够在前后方向和垂直方向上自由移位。 可倾斜构件20设置在形成在盖40内的空腔41中。 当盖40从前方或从上方被按压时，可倾斜构件20被盖40按压以倾斜，由此开关体30进行切换动作。