公开(公告)号：US07718526B2

公开(公告)日：2010-05-18

申请号：US11778494

申请日：2007-07-16

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光晶片边缘的上表面的三个抛光滚筒，研磨滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止导致晶片边缘上的薄膜脱落的障碍物的出现。

公开(公告)号：US07250365B2

公开(公告)日：2007-07-31

申请号：US11167253

申请日：2005-06-28

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光晶片边缘的上表面的三个抛光滚筒，研磨滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止导致晶片边缘上的薄膜脱落的障碍物的出现。

公开(公告)号：US20050250331A1

公开(公告)日：2005-11-10

申请号：US11167253

申请日：2005-06-28

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/76 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L21/30 ,  H01L21/302 ,  H01L21/46 ,  H01L21/461

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光晶片边缘的上表面的三个抛光滚筒，研磨滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止导致晶片边缘上的薄膜脱落的障碍物的出现。

公开(公告)号：US20100227474A1

公开(公告)日：2010-09-09

申请号：US12781816

申请日：2010-05-18

申请人： Toshiyuki ARAI ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki ARAI ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光晶片边缘的上表面的三个抛光滚筒，研磨滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止导致晶片边缘上的薄膜脱落的障碍物的出现。

公开(公告)号：US07977234B2

公开(公告)日：2011-07-12

申请号：US12781816

申请日：2010-05-18

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光晶片边缘的上表面的三个抛光滚筒，研磨滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止导致晶片边缘上的薄膜脱落的障碍物的出现。

公开(公告)号：US20070259522A1

公开(公告)日：2007-11-08

申请号：US11778494

申请日：2007-07-16

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

公开(公告)号：US06979649B2

公开(公告)日：2005-12-27

申请号：US10085063

申请日：2002-03-01

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/76 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L21/302

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the water, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edges of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光水边缘上表面的三个抛光滚筒，抛光滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止造成晶片边缘上薄膜脱落的障碍物。

公开(公告)号：US06468817B2

公开(公告)日：2002-10-22

申请号：US09934561

申请日：2001-08-23

申请人： Shinichi Nakabayashi ,  Hisahiko Abe ,  Hirofumi Tsuchiyama ,  Yukio Kenbo ,  Yoshiteru Katsumura

发明人： Shinichi Nakabayashi ,  Hisahiko Abe ,  Hirofumi Tsuchiyama ,  Yukio Kenbo ,  Yoshiteru Katsumura

IPC分类号： H01L2166

CPC分类号： H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In the manufacturing method, micro scratches are detected without performing a breakdown inspection on wafers flowing through a mass production process. The method comprises: forming an insulating film on main surfaces of a plurality of first wafers which flow through a mass-production process; preparing a dummy wafer for monitoring, on which a silicon-oxide-based insulating film is formed; performing chemical mechanical polishing on the insulating films respectively formed on main surfaces of the plurality of first wafers and the dummy wafer; performing etching on the insulating film of the dummy wafer with use of a solution containing hydrofluoric acid, after the step of performing the chemical mechanical polishing; and measuring a number of scratches on the insulating film of the dummy wafer subjected to the etching.

摘要翻译： 在制造方法中，在对通过批量生产工艺流动的晶片进行击穿检测的情况下，检测到微小的划痕。 该方法包括：在流过批量生产过程的多个第一晶片的主表面上形成绝缘膜; 制备用于监测的伪晶片，其上形成氧化硅基绝缘膜; 对分别形成在多个第一晶片和虚设晶片的主表面上的绝缘膜执行化学机械抛光; 在进行化学机械抛光的步骤之后，使用含有氢氟酸的溶液在虚拟晶片的绝缘膜上进行蚀刻; 并测量经过蚀刻的虚设晶片的绝缘膜上的划痕数。

公开(公告)号：US06514864B2

公开(公告)日：2003-02-04

申请号：US09854578

申请日：2001-05-15

申请人： Shinichi Nakabayashi ,  Hisahiko Abe ,  Katsuhiro Ota

发明人： Shinichi Nakabayashi ,  Hisahiko Abe ,  Katsuhiro Ota

IPC分类号： H01L21302

CPC分类号： H01L21/31053 ,  H01L21/76229 ,  H01L27/10852

摘要： For carrying out chemical mechanical polishing while supplying a polishing slurry to a surface to be processed of individual wafers running through a mass-production process so as to suppress occurrence of microscratches by reducing the density of coagulated particles in the polishing slurry used in a chemical mechanical polishing step, the polishing slurry used is allowed to stand in a condition filled in a container for at least 30 days or over, preferably 40 days or over, and more preferably 50 days or over so that the concentration of coagulated particles having a size of 1 &mgr;m or over is at 200,000 particles/0.5 cc, preferably 50,000 particles/0.5 cc, and more preferably 20,000 particles/0.5 cc.

摘要翻译： 为了进行化学机械抛光，同时将抛光浆料供给到通过批量生产过程的各个晶片的待处理表面，以通过降低用于化学机械的抛光浆料中的凝结颗粒的密度来抑制微细化的发生 抛光步骤，将所使用的抛光浆液在填充在容器中的状态下静置至少30天或更长时间，优选40天或更长时间，更优选50天或更长时间，使得具有尺寸的凝固颗粒的浓度 1mum以上为200,000个/ 0.5cc，优选为50,000个/ 0.5cc，更优选为20,000个/ 0.5cc。