公开(公告)号：US07718526B2

公开(公告)日：2010-05-18

申请号：US11778494

申请日：2007-07-16

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光晶片边缘的上表面的三个抛光滚筒，研磨滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止导致晶片边缘上的薄膜脱落的障碍物的出现。

公开(公告)号：US20100227474A1

公开(公告)日：2010-09-09

申请号：US12781816

申请日：2010-05-18

申请人： Toshiyuki ARAI ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki ARAI ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光晶片边缘的上表面的三个抛光滚筒，研磨滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止导致晶片边缘上的薄膜脱落的障碍物的出现。

公开(公告)号：US07250365B2

公开(公告)日：2007-07-31

申请号：US11167253

申请日：2005-06-28

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光晶片边缘的上表面的三个抛光滚筒，研磨滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止导致晶片边缘上的薄膜脱落的障碍物的出现。

公开(公告)号：US20050250331A1

公开(公告)日：2005-11-10

申请号：US11167253

申请日：2005-06-28

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/76 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L21/30 ,  H01L21/302 ,  H01L21/46 ,  H01L21/461

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光晶片边缘的上表面的三个抛光滚筒，研磨滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止导致晶片边缘上的薄膜脱落的障碍物的出现。

公开(公告)号：US07977234B2

公开(公告)日：2011-07-12

申请号：US12781816

申请日：2010-05-18

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光晶片边缘的上表面的三个抛光滚筒，研磨滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止导致晶片边缘上的薄膜脱落的障碍物的出现。

公开(公告)号：US20070259522A1

公开(公告)日：2007-11-08

申请号：US11778494

申请日：2007-07-16

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the wafer, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edge of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

公开(公告)号：US06979649B2

公开(公告)日：2005-12-27

申请号：US10085063

申请日：2002-03-01

申请人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

发明人： Toshiyuki Arai ,  Ryousei Kawai ,  Hirofumi Tsuchiyama ,  Fumiyuki Kanai ,  Shinichi Nakabayashi

IPC分类号： H01L21/76 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/768 ,  H01L21/302

CPC分类号： H01L21/76843 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/3105 ,  H01L21/321 ,  H01L21/76807 ,  H01L21/76819 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/7685

摘要： A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the water, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edges of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

摘要翻译： 例如，制造半导体集成电路器件的方法包括抛光晶片边缘的整个区域，使用抛光滚筒抛光水边缘上表面的三个抛光滚筒，抛光滚筒抛光 晶片边缘的中心部分和抛光滚筒抛光晶片边缘的下表面，从而防止造成晶片边缘上薄膜脱落的障碍物。

公开(公告)号：US06524961B1

公开(公告)日：2003-02-25

申请号：US09359760

申请日：1999-07-22

申请人： Souichi Katagiri ,  Kan Yasui ,  Ryousei Kawai ,  Sadayuki Nishimura ,  Masahiko Sato ,  Yoshio Kawamura ,  Shigeo Moriyama

发明人： Souichi Katagiri ,  Kan Yasui ,  Ryousei Kawai ,  Sadayuki Nishimura ,  Masahiko Sato ,  Yoshio Kawamura ,  Shigeo Moriyama

IPC分类号： H01L21461

CPC分类号： B24B37/245 ,  B24D3/32 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/7684

摘要： A film formed on a surface of a wafer on which an integrated circuit is to be constructed can be planarized by using a fixed abrasive tool regardless of the width of elements of a pattern underlying the film. The fixed abrasive tool is liable to form scratches in the surface of the film. A planarizing process of the present invention employs a fixed abrasive tool containing substances harder than the film to be planarized in a content of 10 ppm or below and having a mean pore diameter of 0.2 &mgr;m or below.

公开(公告)号：US06723144B2

公开(公告)日：2004-04-20

申请号：US10308088

申请日：2002-12-03

申请人： Souichi Katagiri ,  Kan Yasui ,  Ryousei Kawai ,  Sadayuki Nishimura ,  Masahiko Sato ,  Yoshio Kawamura ,  Shigeo Moriyama

发明人： Souichi Katagiri ,  Kan Yasui ,  Ryousei Kawai ,  Sadayuki Nishimura ,  Masahiko Sato ,  Yoshio Kawamura ,  Shigeo Moriyama

IPC分类号： B24D302

CPC分类号： B24B37/245 ,  B24D3/32 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76819 ,  H01L21/7684

摘要： A film formed on a surface of a wafer on which an integrated circuit is to be constructed can be planarized by using a fixed abrasive tool regardless of the width of elements of a pattern underlying the film. The fixed abrasive tool is liable to form scratches in the surface of the film. A planarizing process of the present invention employs a fixed abrasive tool containing substances harder than the film to be planarized in a content of 10 ppm or below and having a mean pore diameter of 0.2 &mgr;m or below.

摘要翻译： 形成在其上将要构造集成电路的晶片的表面上的膜可以通过使用固定的研磨工具进行平面化，而与薄膜下面的图案的元件的宽度无关。 固定的研磨工具易于在膜表面形成划痕。 本发明的平面化方法使用含有比待平坦化的膜更硬的物质的固定研磨工具，其含量为10ppm以下，平均孔径为0.2μm以下。

公开(公告)号：US06612912B2

公开(公告)日：2003-09-02

申请号：US09371003

申请日：1999-08-10

申请人： Kan Yasui ,  Souichi Katagiri ,  Shigeo Moriyama ,  Yoshio Kawamura ,  Ryousei Kawai ,  Sadayuki Nishimura ,  Masahiko Sato

发明人： Kan Yasui ,  Souichi Katagiri ,  Shigeo Moriyama ,  Yoshio Kawamura ,  Ryousei Kawai ,  Sadayuki Nishimura ,  Masahiko Sato

IPC分类号： B24B100

CPC分类号： B24B53/017 ,  B24B1/04 ,  B24B37/042 ,  B24B53/12

摘要： A method for fabricating a semiconductor device includes grindstone surface activation treatment by means of a brush or ultrasonic wave carried out when a concave/convex pattern of a semiconductor wafer is planarized by polishing a semiconductor wafer held by a wafer holder by using a grindstone constituted of abrasive grains and material for holding the abrasive grains onto which the semiconductor wafer is pressed with relative motion. The semiconductor wafer is processed with high removal rate and the polishing thickness is controlled accurately.

摘要翻译： 一种制造半导体器件的方法包括：当半导体晶片的凹凸图案通过使用由晶片保持器保持的半导体晶片进行平面化而进行的刷子或超声波的磨石表面激活处理， 磨料颗粒和用于保持磨料颗粒的材料，半导体晶片被相对运动地压在其上。 半导体晶片以高去除率进行处理，并且精确地控制抛光厚度。