公开(公告)号：US06579465B1

公开(公告)日：2003-06-17

申请号：US09668126

申请日：2000-09-21

申请人： Toshiyuki Takamatsu ,  Shuzo Fujimura

发明人： Toshiyuki Takamatsu ,  Shuzo Fujimura

IPC分类号： B44C122

CPC分类号： H01J37/32357 ,  H01L21/31116

摘要： A method for treating a surface of an object using a hydrogen bearing compound. The method includes a step of generating a plasma from a Gas-C in a plasma source, where the Gas-C includes at least a gas-A and a gas-B. Gas-A is selected from a compound including at least a nitrogen bearing compound (e.g., N2) or an other gas, e.g., gas of in elements in group 18 classified in the atomic periodic table. Gas-B has at least a H2O bearing compound or is preferably H2O. The method also includes a step of injecting a Gas-D downstream of the plasma source of said Gas C, and setting an object downstream of the Gas-D injection and downstream of the plasma source. The object has a surface to be processed. The method also includes a step of processing the surface of said object by a mixture species generated from the Gas-C in the plasma and the Gas-D. The H2O bearing compound in Gas-C includes a H2O bearing compound that is lower in concentration than a Gas-A concentration.

摘要翻译： 使用含氢化合物处理物体的表面的方法。 该方法包括从等离子体源中的气体-C产生等离子体的步骤，其中气体-C至少包括气体A和气体-B。 气体-A选自包括至少含氮化合物（例如N 2）或其它气体的化合物，例如分类为原子周期表的第18组元素中的气体。 气体-B至少具有含H 2 O的化合物或者优选H 2 O. 该方法还包括将气体C的等离子体源下游的气体-D注入气体D注入和下游等离子体源的步骤。 物体有待处理的表面。 该方法还包括通过等离子体中的气体-C和Gas-D产生的混合物来处理所述物体的表面的步骤。 Gas-C中含H 2 O的化合物包括浓度低于Gas-A浓度的含H2O的化合物。

公开(公告)号：US6149829A

公开(公告)日：2000-11-21

申请号：US45979

申请日：1998-03-17

申请人： Toshiyuki Takamatsu ,  Shuzo Fujimura

发明人： Toshiyuki Takamatsu ,  Shuzo Fujimura

IPC分类号： H01L21/311 ,  B44C1/22

CPC分类号： H01J37/32357 ,  H01L21/31116

摘要： A method for treating a surface of an object using a hydrogen bearing compound. The method includes a step of generating a plasma from a Gas-C in a plasma source, where the Gas-C includes at least a gas-A and a gas-B. Gas-A is selected from a compound including at least a nitrogen bearing compound (e.g., N.sub.2) or an other gas, e.g., gas of in elements in group 18 classified in the atomic periodic table. Gas-B has at least a H.sub.2 O bearing compound or is preferably H.sub.2 O. The method also includes a step of injecting a Gas-D downstream of the plasma source of said Gas C, and setting an object downstream of the Gas-D injection and downstream of the plasma source. The object has a surface to be processed. The method also includes a step of processing the surface of said object by a mixture species generated from the Gas-C in the plasma and the Gas-D. The H.sub.2 O bearing compound in Gas-C includes a H.sub.2 O bearing compound that is lower in concentration than a Gas-A concentration.

公开(公告)号：US07014788B1

公开(公告)日：2006-03-21

申请号：US09328939

申请日：1999-06-09

申请人： Shuzo Fujimura ,  Toshiyuki Takamatsu

发明人： Shuzo Fujimura ,  Toshiyuki Takamatsu

IPC分类号： H01L21/00

CPC分类号： H01L21/02046 ,  C23G5/00 ,  H01J37/32192 ,  H01J37/32357

摘要： A method for treating material surface utilizing atomic hydrogen. The method includes utilizing atomic hydrogen by mixing halogen and/or halide to a gas which is used for generating, atomic hydrogen in the plasma. The present method also includes utilizing a characteristics of plasma downstream (11) in which the objective surface is prevented from physical damage caused by high energy particle and undesirable reactive species are controlled so as to avoid their influence. In an alternative embodiment, the present invention includes a method for a material surface treatment utilizing atomic hydrogen without the influence of atomic oxygen by using a gas, as a plasma source, containing the molecule and/or compound of chlorine, bromine and/or iodine and not containing molecules with oxygen atom.

摘要翻译： 一种利用原子氢处理材料表面的方法。 该方法包括通过将卤素和/或卤素混合到用于产生等离子体中的原子氢的气体中来利用原子氢。 本方法还包括利用等离子体下游（11）的特征，其中防止物镜表面被高能粒子引起的物理损伤，并且控制不期望的反应物种以避免其影响。 在替代实施例中，本发明包括使用含有氯，溴和/或碘的分子和/或化合物的气体作为等离子体源，利用原子氢而不受原子氧的影响的材料表面处理方法 不含有氧原子的分子。

公开(公告)号：US06255197B1

公开(公告)日：2001-07-03

申请号：US09328937

申请日：1999-06-09

申请人： Shuzo Fujimura ,  Toshiyuki Takamatsu

发明人： Shuzo Fujimura ,  Toshiyuki Takamatsu

IPC分类号： H01L21322

CPC分类号： H01L21/28176 ,  H01J2237/336 ,  H01L21/3003 ,  H01L21/324

摘要： A processing method includes providing a first gas including a hydrogen atom into a first chamber, igniting a plasma within the first chamber to provide a source of hydrogen atoms, passing the plasma downstream through a cavity to a second chamber disposed separately from the first chamber, and heating an object disposed within the second chamber.

摘要翻译： 一种处理方法包括向第一室提供包括氢原子的第一气体，点燃第一室内的等离子体以提供氢原子源，使等离子体向下游流过空腔至与第一室分开设置的第二室， 以及加热设置在第二室内的物体。

公开(公告)号：US06419772B1

公开(公告)日：2002-07-16

申请号：US09402652

申请日：1999-10-08

申请人： Toshiyuki Takamatsu ,  Toshinori Takao ,  Masayoshi Suzue ,  Hazime Hara ,  Hiroshi Nagata ,  Kazuhiko Mori ,  Masato Tani ,  Takashi Hamauzu

发明人： Toshiyuki Takamatsu ,  Toshinori Takao ,  Masayoshi Suzue ,  Hazime Hara ,  Hiroshi Nagata ,  Kazuhiko Mori ,  Masato Tani ,  Takashi Hamauzu

IPC分类号： B32B3100

CPC分类号： H05K9/0003 ,  H01Q1/12 ,  H01Q17/008 ,  Y10S52/10

摘要： The present invention attains a microwave absorber attachment in a readily, rapidly and stable manner. According to the microwave absorber attaching method and structure of the present invention, a plurality of ferrite plates 4 are bonded to a shield plate 2 at an installation place such as the ceiling, a wall, the floor or the like; the base portion of a support rod 6 is connected to the ferrite plates 4, causing the support rod 6 to project therefrom; a microwave absorber 1 is placed with its base portion placed along the ferrite plates 4; the support rod 6 passes through a tip opening 11 of the microwave absorber 1, causing the support rod 6 to project therethrough; a covering tray 8 allows for the support rod 6 to pass therethrough to cover the microwave absorber 1; and a fastening member is fastened to a tip threaded portion 12 of the support rod 6, thus attaching the microwave absorber 1 to the installation place. The gaps between adjacent ferrite plates 4 are filled with a magnetic sealing agent.

摘要翻译： 本发明以容易，快速和稳定的方式实现微波吸收器的附着。 根据本发明的微波吸收器的贴装方法和结构，在天花板，墙壁，地板等的安装场所，将多个铁氧体板4接合在屏蔽板2上。 支撑杆6的基部连接到铁氧体板4，使得支撑杆6从其突出; 放置微波吸收体1，其基部沿着铁氧体板4放置; 支撑杆6穿过微波吸收器1的尖端开口11，使支撑杆6突出; 覆盖托盘8允许支撑杆6穿过其以覆盖微波吸收器1; 并且紧固构件紧固到支撑杆6的尖端螺纹部分12，从而将微波吸收器1附接到安装位置。 相邻的铁氧体板4之间的间隙用磁性密封剂填充。

公开(公告)号：US06472299B2

公开(公告)日：2002-10-29

申请号：US09811785

申请日：2001-03-20

申请人： Kenzo Hiraoka ,  Chiharu Miyata ,  Toshiyuki Takamatsu

发明人： Kenzo Hiraoka ,  Chiharu Miyata ,  Toshiyuki Takamatsu

IPC分类号： H01L2120

CPC分类号： C23C16/452 ,  Y10T117/1016

摘要： A substrate M having a thin film on its surface is supported on a support 4. A gas discharge opening 12A of hydrogen radicals which faces the thin film on the substrate is provided. A semiconductor thin film is deposited on the substrate M by supplying the thin film with hydrogen radicals H from the gas discharge opening 12A while the substrate M is cooled via to 40 K or less through heat conduction via the support 4 by means of refrigerator 3.

摘要翻译： 在其表面上具有薄膜的基板M被支撑在支撑件4上。提供了与基板上的薄膜相对的氢自由基气体排出口12A。 通过借助于冰箱3经由支撑件4通过热传导将衬底M冷却至40K以下，从气体排出口12A向薄膜供给氢原子H，从而将半导体薄膜沉积在衬底M上。

公开(公告)号：US20050212626A1

公开(公告)日：2005-09-29

申请号：US10513427

申请日：2003-05-06

申请人： Toshiyuki Takamatsu

发明人： Toshiyuki Takamatsu

IPC分类号： H01P1/20 ,  H01P3/12 ,  H05B6/64 ,  H05B6/80

CPC分类号： H05B6/806 ,  H05B6/70

摘要： A high frequency reaction processing system comprising an outer container (40) made of a dielictric material and having two end faces, which can close the inner cavity, one or more high frequency wave coupling portion (42) disposed at arbitrary position on the outer surface of the outer container (40), one or more inner container (41) made of a dielectric material and having two end faces, which can closeg the inner cavity, disposed at a position for receiving a high frequency wave guided through the high frequency wave coupling portion (42) without touching the inner side face of the outer container (40), and a covering portion (43) made of a conductive material, for covering the outer surface of the outer container except for the area occupied with the high frequency wave coupling portion (42) and sustaining the potential at a level equal to the ground potential of a waveguide line.

摘要翻译： 一种高频反应处理系统，包括由双折射材料制成的外容器（40），并且具有可以封闭所述内腔的两个端面，一个或多个设置在所述外表面上的任意位置的高频波耦合部分（42） 的外部容器（40）的一个或多个内部容器（41），并且具有可以封闭所述内部空腔的两个端面，所述内部容器（41）由电介质材料制成，所述两个端面设置在用于接收通过所述高频波引导的高频波 联接部分（42），而不接触外部容器（40）的内侧面;以及由导电材料制成的覆盖部分（43），用于覆盖外部容器的外表面，除了高频区域 波形耦合部分（42）并且将电位维持在等于波导管线的接地电位的电平。

公开(公告)号：US06562079B1

公开(公告)日：2003-05-13

申请号：US09743070

申请日：2001-01-04

申请人： Toshiyuki Takamatsu

发明人： Toshiyuki Takamatsu

IPC分类号： C23C1650

CPC分类号： H05H1/46 ,  C23C16/511 ,  H05H2001/4622

摘要： A discharge tube (31) provided inside the cavity of a waveguide (4) is so structured as to monotonously decrease the cross section of the cavity in the direction in which the microwave travels and thereby to close the cavity. The waveguide (34) has vent holes (34a, 34c) made through the tube wall. A metallic member (32) monotonously decreasing the cross section of the cavity in the direction in which the microwave travels and thereby closing the cavity is provided on the opposite side to the discharge tube (31) in the direction in which the microwave travels. A fluid is made to flow through the metallic member. A gas introducing port is provided in the discharge tube (31), and a gas exhaust port is provided also in the discharge tube (31) on the opposite side to the gas introducing port with respect to the center axis of the waveguide (34). Thus, no standing wave is generated from the time when a plasma is created, the plasma absorbs energy at high efficiency, the temperature at the wall of the discharge area little increases, and the density of active particles is high.

摘要翻译： 设置在波导（4）的腔体内部的放电管（31）被构造为单调地减小空腔在微波行进方向上的横截面，从而封闭空腔。 波导（34）具有通过管壁制成的通气孔（34a，34c）。 在微波行进方向上与放电管（31）相反的一侧设置有单向减小空腔的微波行进方向的截面从而封闭空腔的金属构件（32）。 使流体流过金属构件。 在放电管（31）中设置有气体导入口，在与导电口相反侧的放电管（31）中相对于波导管（34）的中心轴设置排气口， 。 因此，从等离子体产生时起不产生驻波，等离子体以高效率吸收能量，放电面积壁的温度几乎不增加，活性粒子的密度高。

公开(公告)号：US5259407A

公开(公告)日：1993-11-09

申请号：US715421

申请日：1991-06-14

申请人： Junichi Tuchida ,  Toshiyuki Takamatsu

发明人： Junichi Tuchida ,  Toshiyuki Takamatsu

IPC分类号： H01L21/00 ,  H01L21/306 ,  B08B3/04

CPC分类号： H01L21/02052 ,  H01L21/67017 ,  H01L21/67057 ,  Y10S134/902

摘要： A wafer surface treatment apparatus and method used in the apparatus including a treatment tank with a cylindrical inside with a bottom, a circular recess formed in the bottom of the tank, a plurality of lower fluid holes opened in the recess, and a horizontally long opening provided at lower part of the side wall of the tank. A movable wall is tightly but slidably installed in the cylindrical inside of the tank so that the movable wall forms a closed room with the recess when it comes into contact with the bottom of the tank. Also, a plurality of upper fluid holes are provided so as to communicate with the closed room, and a rinsing water and washing liquid supply/discharge device is connected to the upper and lower fluid holes. Surfaces of a semiconductor wafer is treated by placing one wafer in the recess, closing the opening, and then spouting a fluid (washing liquid and rinsing water) onto the both sides of the wafer repeatedly while the wafer is floating and rotated by a spouting force of the fluid in the closed room. The fluid used in the treatment is discharged from the tank while the treatment is being performed.

摘要翻译： 一种晶片表面处理装置和方法，该装置包括：具有圆筒形内部的处理槽，底部形成有圆形凹槽，在槽的底部形成有圆形凹槽，多个下部流体孔在凹部中敞开，水平长的开口 设置在罐的侧壁的下部。 可移动的壁紧紧地但可滑动地安装在罐的圆筒形内部，使得可移动壁当与槽的底部接触时形成具有凹部的封闭室。 此外，多个上部流体孔设置成与封闭的房间连通，并且冲洗水和洗涤液供给/排出装置连接到上部和下部流体孔。 半导体晶片的表面通过将一个晶片放置在凹槽中，闭合开口，然后在晶片浮动并通过喷射力旋转的同时将流体（洗涤液体和冲洗水）反复喷射到晶片的两侧上来进行处理 的流体在封闭的房间。 在进行处理时，处理中使用的流体从罐中排出。