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公开(公告)号：US10174420B2
公开(公告)日：2019-01-08
申请号：US14916363
申请日：2014-08-25
申请人： Toyo Kohan Co., Ltd.
发明人： Yusuke Hashimoto , Teppei Kurokawa , Takashi Koshiro , Hironao Okayama , Tatsuoki Nagaishi , Kotaro Ohki , Genki Honda
IPC分类号： C23C14/35 , C30B29/16 , C23C14/08 , C30B23/02 , H01L39/24 , C23C14/54 , C23C28/00 , C30B29/22
摘要： This invention provides a method for forming an oxide layer on a metal substrate, which enables manufacture of an oxide layer with improved crystal orientation in comparison with that of the outermost layer of a metal substrate. The method for forming an oxide layer on a metal substrate 20 via RF magnetron sputtering comprises a step of subjecting the crystal-oriented metal substrate 20 exhibiting a c-axis orientation of 99% on its outermost layer to RF magnetron sputtering while adjusting the angle α formed by a perpendicular at a film formation position 20a on the metal substrate 20 and a line from the film formation position 20a to a point 10a at which the perpendicular magnetic flux density is zero on the target 10 located at the position nearest to the film formation position 20a to 15 degrees or less.
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2.发明申请公开(公告)号：US20170338008A1
公开(公告)日：2017-11-23
申请号：US15522378
申请日：2015-10-23
发明人： Teppei Kurokawa , Yusuki Hashimoto , Hironao Okayama , Tatsuoki Nagaishi , Kotaro Ohki , Genki Honda
CPC分类号： H01B12/06 , B32B15/01 , B32B15/015 , B32B33/00 , H01B5/02 , H01B13/00 , H01L39/2454
摘要： This invention provides a substrate for a superconducting wire used for manufacturing a superconducting wire with excellent superconductivity and a method for manufacturing the same. Such substrate for a superconducting wire exhibits the crystal orientation of metals on the outermost layer, such as a c-axis orientation rate of 99% or higher, a Δω of 6 degrees or less, and a percentage of an area in which the crystal orientation is deviated by 6 degrees or more from the (001) [100] per unit area of 6% or less.
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公开(公告)号：US10748678B2
公开(公告)日：2020-08-18
申请号：US15522378
申请日：2015-10-23
发明人： Teppei Kurokawa , Yusuke Hashimoto , Hironao Okayama , Tatsuoki Nagaishi , Kotaro Ohki , Genki Honda
摘要： This invention provides a substrate for a superconducting wire used for manufacturing a superconducting wire with excellent superconductivity and a method for manufacturing the same. Such substrate for a superconducting wire exhibits the crystal orientation of metals on the outermost layer, such as a c-axis orientation rate of 99% or higher, a Δω of 6 degrees or less, and a percentage of an area in which the crystal orientation is deviated by 6 degrees or more from the (001) [100] per unit area of 6% or less.
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4.发明申请METHOD FOR FORMING OXIDE LAYER, LAMINATED SUBSTRATE FOR EPITAXIAL GROWTH, AND METHOD FOR PRODUCING THE SAME 审中-公开用于形成氧化层的方法，用于外延生长的层压基板及其制造方法公开(公告)号：US20160194750A1
公开(公告)日：2016-07-07
申请号：US14916363
申请日：2014-08-25
发明人： Yusuke Hashimoto , Teppei Kurokawa , Takashi Koshiro , Hironao Okayama , Tatsuoki Nagaishi , Kotaro Ohki , Genki Honda
CPC分类号： C23C14/35 , C23C14/08 , C23C14/083 , C23C14/541 , C23C28/321 , C23C28/322 , C23C28/3455 , C30B23/02 , C30B29/16 , C30B29/22 , H01L39/2461
摘要： This invention provides a method for forming an oxide layer on a metal substrate, which enables manufacture of an oxide layer with improved crystal orientation in comparison with that of the outermost layer of a metal substrate. The method for forming an oxide layer on a metal substrate 20 via RF magnetron sputtering comprises a step of subjecting the crystal-oriented metal substrate 20 exhibiting a c-axis orientation of 99% on its outermost layer to RF magnetron sputtering while adjusting the angle α formed by a perpendicular at a film formation position 20a on the metal substrate 20 and a line from the film formation position 20a to a point 10a at which the perpendicular magnetic flux density is zero on the target 10 located at the position nearest to the film formation position 20a to 15 degrees or less.
摘要翻译： 本发明提供一种在金属基板上形成氧化物层的方法，与金属基板的最外层相比，能够制造具有改善的晶体取向的氧化物层。 通过RF磁控溅射在金属基板20上形成氧化物层的方法包括以下步骤：在最外层将表现出99％的c轴取向的晶体取向金属基板20进行RF磁控溅射，同时调节角度α 由位于金属基板20上的成膜位置20a处的垂直线和从成膜位置20a到位于最靠近膜形成位置的靶10上的垂直磁通密度为零的点 位置20a至15度或更小。
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