INSULATING FILM-COATED METAL FOIL
    2.
    发明申请
    INSULATING FILM-COATED METAL FOIL 有权
    绝缘膜包覆金属箔

    公开(公告)号:US20140166337A1

    公开(公告)日:2014-06-19

    申请号:US14233576

    申请日:2012-07-19

    IPC分类号: H01B3/00 H01B13/06

    摘要: An insulating film-coated metal foil having on one or both surfaces thereof an organic-inorganic hybrid layer containing dimethylsiloxane and a metalloxane comprising a metal other than Si. Relative to the concentration [Si]1/4t of the Si at a depth of ¼t from the surface of the organic-inorganic hybrid layer in the thickness direction of the hybrid layer, the concentration [Si]3/4t of the Si at a depth of ¾t from the surface of the organic-inorganic hybrid layer in the thickness direction of the hybrid layer satisfies [Si]1/4t

    摘要翻译: 在其一个或两个表面上具有包含二甲基硅氧烷的有机 - 无机混合层和包含除了Si之外的金属的金属氧化物的绝缘膜涂覆的金属箔。 相对于混合层的厚度方向的距离有机 - 无机混合层的表面的深度为lt的Si的浓度[Si] 1 / 4t,a的Si的浓度[Si] 3 / 4t 在混合层的厚度方向上,有机 - 无机混合层的表面的深度为¾t满足[Si] 1 / 4t <[Si] 3 / 4t,([Si] 3 / 4t- [Si] 1 / 4t)/ [Si] 3 / 4t为0.02-0.23。 提供了可以用于表现出平坦度,柔韧性,绝缘性和耐热性的太阳能电池基板,柔性电路基板等中的金属箔,并且具有具有不易受划伤的表面的层 处理基材的过程,如运输和转运。

    COATING SOLUTION FOR FORMING FLAT-SURFACE INSULATING FILM, FLAT-SURFACE INSULATING FILM-COATED SUBSTRATE, AND PRODUCTION METHOD OF A FLAT-SURFACE INSULATING FILM-COATED SUBSTRATE
    3.
    发明申请
    COATING SOLUTION FOR FORMING FLAT-SURFACE INSULATING FILM, FLAT-SURFACE INSULATING FILM-COATED SUBSTRATE, AND PRODUCTION METHOD OF A FLAT-SURFACE INSULATING FILM-COATED SUBSTRATE 有权
    用于形成平坦表面绝缘膜,平坦表面绝缘膜包覆基材的涂料溶液和平面表面绝缘膜包覆基材的生产方法

    公开(公告)号:US20100048788A1

    公开(公告)日:2010-02-25

    申请号:US12450646

    申请日:2008-03-25

    IPC分类号: C08K5/057 B05D3/02

    摘要: A coating solution for forming a flat-surface insulating film, which is a coating solution obtained by dissolving a poly(diorgano)siloxane A having a mass average molecular weight of 900 to 10,000 and a metal alkoxide B in an organic solvent C and further adding water, wherein the molar ratio A/B of the poly(diorgano)siloxane A to 1 mol of the metal alkoxide B is from 0.05 to 1.5, the organic solvent C has a hydroxyl group, the solubility of water in 100 g of the organic solvent C is from 3 to 20 g, and the molar ratio C/A of the organic solvent C to 1 mol of the poly(diorgano)siloxane A is from 0.05 to 100. This coating solution for forming a flat-surface insulating film ensures that an organic modified silicate composed of a poly(diorgano)siloxane and a metal alkoxide can be formed as a thick film having 1 μm or more and can be an organic modified silicate insulating film causing no irregularities due to phase separation and having a low Young's modulus and flexibility high enough to follow the deformation of a substrate board, as well as high film surface flatness allowing for mounting of microcomponents of an electronic device or the like.

    摘要翻译: 一种用于形成平面绝缘膜的涂布溶液,其是通过将质均分子量为900〜10,000的聚(二有机基)硅氧烷A和金属醇盐B溶解在有机溶剂C中而得到的涂布溶液,并进一步添加 水,其中聚(二有机基)硅氧烷A与1mol金属醇盐B的摩尔比A / B为0.05至1.5,有机溶剂C具有羟基,水在100g有机溶剂中的溶解度 溶剂C为3〜20g,有机溶剂C与1mol聚(二有机基)硅氧烷A的摩尔比C / A为0.05〜100。这种用于形成平面绝缘膜的涂布液确保 可以形成由聚(二有机基)硅氧烷和金属醇盐构成的有机改性硅酸盐作为1μm以上的厚膜,并且可以是由于相分离而不引起由于相分离引起的不规则性并且具有低杨氏值的有机改性硅酸盐绝缘膜 模量和柔度足够高t o遵循基板的变形,以及允许安装电子设备等的微元件的高膜表面平坦度。

    Coating solution for forming flat-surface insulating film, flat-surface insulating film-coated substrate, and production method of a flat-surface insulating film-coated substrate
    6.
    发明授权
    Coating solution for forming flat-surface insulating film, flat-surface insulating film-coated substrate, and production method of a flat-surface insulating film-coated substrate 有权
    用于形成平面绝缘膜,平面绝缘膜涂覆基板的涂布溶液和平面绝缘膜涂覆基板的制造方法

    公开(公告)号:US07951458B2

    公开(公告)日:2011-05-31

    申请号:US12450646

    申请日:2008-03-25

    IPC分类号: B32B9/04 C09D183/06

    摘要: A coating solution for forming a flat-surface insulating film, which is a coating solution obtained by dissolving a poly(diorgano)siloxane A having a mass average molecular weight of 900 to 10,000 and a metal alkoxide B in an organic solvent C and further adding water, wherein the molar ratio A/B of the poly(diorgano)siloxane A to 1 mol of the metal alkoxide B is from 0.05 to 1.5, the organic solvent C has a hydroxyl group, the solubility of water in 100 g of the organic solvent C is from 3 to 20 g, and the molar ratio C/A of the organic solvent C to 1 mol of the poly(diorgano)siloxane A is from 0.05 to 100. This coating solution for forming a flat-surface insulating film ensures that an organic modified silicate composed of a poly(diorgano)siloxane and a metal alkoxide can be formed as a thick film having 1 μm or more and can be an organic modified silicate insulating film causing no irregularities due to phase separation and having a low Young's modulus and flexibility high enough to follow the deformation of a substrate board, as well as high film surface flatness allowing for mounting of microcomponents of an electronic device or the like.

    摘要翻译: 一种用于形成平面绝缘膜的涂布溶液,其是通过将质均分子量为900〜10,000的聚(二有机基)硅氧烷A和金属醇盐B溶解在有机溶剂C中而得到的涂布溶液,并进一步添加 水,其中聚(二有机基)硅氧烷A与1mol金属醇盐B的摩尔比A / B为0.05至1.5,有机溶剂C具有羟基,水在100g有机溶剂中的溶解度 溶剂C为3〜20g,有机溶剂C与1mol聚(二有机基)硅氧烷A的摩尔比C / A为0.05〜100。这种用于形成平面绝缘膜的涂布液确保 可以形成由聚(二有机基)硅氧烷和金属醇盐构成的有机改性硅酸盐作为1μm以上的厚膜,并且可以是由于相分离而不引起由于相分离引起的不规则性并且具有低杨氏值的有机改性硅酸盐绝缘膜 模量和柔度足够高t o遵循基板的变形,以及允许安装电子设备等的微元件的高膜表面平坦度。