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公开(公告)号：US10177199B2
公开(公告)日：2019-01-08
申请号：US15145733
申请日：2016-05-03
发明人： Yu-Dan Zhao , Qun-Qing Li , Xiao-Yang Xiao , Guan-Hong Li , Yuan-Hao Jin , Shou-Shan Fan
摘要： A method for making a metal oxide semiconductor carbon nanotube thin film transistor circuit. A p-type carbon nanotube thin film transistor and a n-type carbon nanotube thin film transistor are formed on an insulating substrate and stacked with each other. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.
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公开(公告)号：US09735367B2
公开(公告)日：2017-08-15
申请号：US15361588
申请日：2016-11-28
发明人： Guan-Hong Li , Qun-Qing Li , Yuan-Hao Jin , Shou-Shan Fan
CPC分类号： H01L51/0048 , H01L29/0673 , H01L29/7869 , H01L33/26 , H01L51/5012 , H01L51/5092 , H01L2251/303 , H01L2924/12041 , H01L2924/12044
摘要： A light emitting diode includes an insulating substrate, a first MgO layer, a semiconductor carbon nanotube layer, a second MgO layer, a functional dielectric layer, a first electrode, and a second electrode. The semiconductor carbon nanotube layer has a first surface and a second surface. The first MgO layer coats entire the first surface. The second surface is divided into a first region and a second region. The first region is coated with the second MgO layer. The second MgO layer is covered by the functional dielectric layer. The second region is exposed. The first electrode is electrically connected to the first region. The second electrode is electrically connected to the second region.
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公开(公告)号：US09202944B2
公开(公告)日：2015-12-01
申请号：US13858735
申请日：2013-04-08
发明人： Jun-Ku Liu , Guan-Hong Li , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L31/0224 , G01J4/04 , H01L31/09 , H01L31/18
CPC分类号： H01L31/0224 , G01J4/04 , H01L31/09 , H01L31/1884 , Y02E10/50
摘要： A polarized light detection system includes a detection apparatus, a power source, and a photoresistor. The detection apparatus, power source and photoresistor are electrically connected with wires to form a galvanic circle. The photoresistor includes a photosensitive material layer with a first surface and a second surface opposite to each other, a first electrode layer located on the first surface of the photosensitive material layer, and a second electrode layer located on the second surface of the photosensitive material layer. The first electrode layer includes a carbon nanotube film structure.
摘要翻译： 偏振光检测系统包括检测装置，电源和光敏电阻。 检测装置，电源和光敏电阻器与电线电连接以形成电流圈。 光敏电阻器包括具有彼此相对的第一表面和第二表面的感光材料层，位于感光材料层的第一表面上的第一电极层和位于感光材料层的第二表面上的第二电极层 。 第一电极层包括碳纳米管膜结构。
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公开(公告)号：US10192930B2
公开(公告)日：2019-01-29
申请号：US15927293
申请日：2018-03-21
发明人： Yu-Dan Zhao , Qun-Qing Li , Xiao-Yang Xiao , Guan-Hong Li , Yuan-Hao Jin , Shou-Shan Fan
摘要： A metal oxide semiconductor carbon nanotube thin film transistor circuit includes a p-type carbon nanotube thin film transistor and an n-type carbon nanotube thin film transistor stacked on one another. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.
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公开(公告)号：US09640770B2
公开(公告)日：2017-05-02
申请号：US14985224
申请日：2015-12-30
发明人： Guan-Hong Li , Qun-Qing Li , Yuan-Hao Jin , Shou-Shan Fan
CPC分类号： H01L51/0525 , B82Y10/00 , H01L51/0048 , H01L51/0529 , H01L51/0545 , H01L51/0558
摘要： An thin film transistor includes an insulating substrate, an MgO layer, a semiconductor carbon nanotube layer, a functional dielectric layer, a source electrode, a drain electrode, and a gate electrode. The semiconductor carbon nanotube layer is sandwiched between the MgO layer and the functional dielectric layer. The source electrode and the drain electrode electrically connect the semiconductor carbon nanotube layer. The gate electrode is sandwiched between the insulating substrate and the MgO layer.
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公开(公告)号：US09564594B2
公开(公告)日：2017-02-07
申请号：US14983610
申请日：2015-12-30
发明人： Guan-Hong Li , Qun-Qing Li , Yuan-Hao Jin , Shou-Shan Fan
CPC分类号： H01L51/0048 , H01L33/18 , H01L33/26 , H01L51/5092 , H01L2251/303
摘要： An light emitting diode includes an insulating substrate, a P-type semiconductor layer, a semiconductor carbon nanotube layer, an MgO layer, a functional dielectric layer, and a first electrode, and a second electrode. The P-type semiconductor layer is located on the insulating substrate. The semiconductor carbon nanotube layer is located on the P-type semiconductor layer. The MgO layer is located on the semiconductor carbon nanotube layer. The functional dielectric layer covers the MgO layer. The first electrode is electrically connected to the P-type semiconductor layer. The second electrode is electrically connected to the semiconductor carbon nanotube layer.
摘要翻译： 发光二极管包括绝缘基板，P型半导体层，半导体碳纳米管层，MgO层，功能介电层和第一电极以及第二电极。 P型半导体层位于绝缘基板上。 半导体碳纳米管层位于P型半导体层上。 MgO层位于半导体碳纳米管层上。 功能介电层覆盖MgO层。 第一电极与P型半导体层电连接。 第二电极与半导体碳纳米管层电连接。
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公开(公告)号：US20160190492A1
公开(公告)日：2016-06-30
申请号：US14985231
申请日：2015-12-30
发明人： Guan-Hong Li , Qun-Qing Li , Yuan-Hao Jin , Shou-Shan Fan
CPC分类号： H01L51/0541 , H01L51/0048 , H01L51/0096 , H01L51/0525 , H01L51/0558 , Y02E10/549
摘要： An N-type semiconductor layer includes an insulating substrate, an MgO layer, a semiconductor carbon nanotube layer, a functional dielectric layer, a source electrode, a drain electrode, and a gate electrode. The semiconductor carbon nanotube layer is sandwiched between the MgO layer and the functional dielectric layer. The source electrode and the drain electrode electrically connect the semiconductor carbon nanotube layer. The gate electrode is on the functional dielectric layer and insulated from the semiconductor carbon nanotube layer.
摘要翻译： N型半导体层包括绝缘基板，MgO层，半导体碳纳米管层，功能电介质层，源电极，漏电极和栅电极。 半导体碳纳米管层夹在MgO层和功能电介质层之间。 源电极和漏极电连接半导体碳纳米管层。 栅电极在功能电介质层上并与半导体碳纳米管层绝缘。
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公开(公告)号：US09548464B2
公开(公告)日：2017-01-17
申请号：US14985231
申请日：2015-12-30
发明人： Guan-Hong Li , Qun-Qing Li , Yuan-Hao Jin , Shou-Shan Fan
CPC分类号： H01L51/0541 , H01L51/0048 , H01L51/0096 , H01L51/0525 , H01L51/0558 , Y02E10/549
摘要： An N-type semiconductor layer includes an insulating substrate, an MgO layer, a semiconductor carbon nanotube layer, a functional dielectric layer, a source electrode, a drain electrode, and a gate electrode. The semiconductor carbon nanotube layer is sandwiched between the MgO layer and the functional dielectric layer. The source electrode and the drain electrode electrically connect the semiconductor carbon nanotube layer. The gate electrode is on the functional dielectric layer and insulated from the semiconductor carbon nanotube layer.
摘要翻译： N型半导体层包括绝缘基板，MgO层，半导体碳纳米管层，功能电介质层，源电极，漏电极和栅电极。 半导体碳纳米管层夹在MgO层和功能电介质层之间。 源电极和漏极电连接半导体碳纳米管层。 栅电极在功能电介质层上并与半导体碳纳米管层绝缘。
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公开(公告)号：US09548455B2
公开(公告)日：2017-01-17
申请号：US14983613
申请日：2015-12-30
发明人： Guan-Hong Li , Qun-Qing Li , Yuan-Hao Jin , Shou-Shan Fan
IPC分类号： H01L33/00 , H01L51/00 , H01L51/50 , H01L29/06 , H01L29/786
CPC分类号： H01L51/0048 , H01L29/0673 , H01L29/7869 , H01L33/26 , H01L51/5012 , H01L51/5092 , H01L2251/303 , H01L2924/12041 , H01L2924/12044
摘要： A light emitting diode includes an insulating substrate, a first MgO layer, a semiconductor carbon nanotube layer, a second MgO layer, a functional dielectric layer, a first electrode, and a second electrode. The semiconductor carbon nanotube layer has a first surface and a second surface. The first MgO layer coats entire the first surface. The second surface is divided into a first region and a second region. The first region is coated with the second MgO layer. The second MgO layer is covered by the functional dielectric layer. The second region is exposed. The first electrode is electrically connected to the first region. The second electrode is electrically connected to the second region.
摘要翻译： 发光二极管包括绝缘基板，第一MgO层，半导体碳纳米管层，第二MgO层，功能介电层，第一电极和第二电极。 半导体碳纳米管层具有第一表面和第二表面。 第一个MgO层涂覆整个第一个表面。 第二表面被分成第一区域和第二区域。 第一区域涂覆有第二MgO层。 第二MgO层被功能介电层覆盖。 第二个地区暴露。 第一电极电连接到第一区域。 第二电极电连接到第二区域。
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公开(公告)号：US20160190461A1
公开(公告)日：2016-06-30
申请号：US14983612
申请日：2015-12-30
发明人： Guan-Hong Li , Qun-Qing Li , Yuan-Hao Jin , Shou-Shan Fan
CPC分类号： H01L51/0048 , H01L51/5012 , H01L51/5092 , H01L2251/303
摘要： A light emitting diode includes an insulating substrate, an MgO layer, a semiconductor carbon nanotube layer, a functional dielectric layer, a first electrode, and a second electrode. The semiconductor carbon nanotube layer has a first surface and a second surface. The MgO layer coats entire the first surface. The second surface is divided into a first region and a second region. The first region is coated with the functional dielectric layer. The second region is exposed. The first electrode is electrically connected to the first region. The second electrode is electrically connected to the second region.
摘要翻译： 发光二极管包括绝缘衬底，MgO层，半导体碳纳米管层，功能电介质层，第一电极和第二电极。 半导体碳纳米管层具有第一表面和第二表面。 MgO层整个第一表面。 第二表面被分成第一区域和第二区域。 第一区域涂覆有功能介电层。 第二个地区暴露。 第一电极电连接到第一区域。 第二电极电连接到第二区域。
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