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公开(公告)号：US10483472B2
公开(公告)日：2019-11-19
申请号：US15846213
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
摘要： A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.
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公开(公告)号：US10381585B2
公开(公告)日：2019-08-13
申请号：US15846215
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
摘要： A thin film transistor includes a gate electrode, a insulating medium layer and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating medium layer. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating medium layer. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.
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公开(公告)号：US10347854B2
公开(公告)日：2019-07-09
申请号：US15817534
申请日：2017-11-20
发明人： Yu-Dan Zhao , Yu-Jia Huo , Xiao-Yang Xiao , Ying-Cheng Wang , Tian-Fu Zhang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L51/05 , H01L29/786 , H01L21/285 , H01L27/12 , H01L27/32 , H01L51/00 , H01L29/16 , H01L29/24 , H03K19/094 , H01L27/06
摘要： The disclosure relates to a logic circuit. The logic circuit includes two ambipolar thin film transistors. Each of the two ambipolar thin film transistors includes a substrate; a semiconductor layer located on the substrate and including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are located on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer located on the substrate and covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The two ambipolar thin film transistors share the same substrate, the same gate, and the same drain.
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公开(公告)号：US10297696B2
公开(公告)日：2019-05-21
申请号：US15846222
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L29/47 , H01L51/00 , H01L29/00 , H01L29/87 , H01L29/16 , H01L29/66 , H01L51/05 , H01L29/872 , H01L29/24 , H01L29/20 , H01L29/04 , H01L21/28 , H01L29/06 , B82Y10/00 , H01L29/49 , H01L29/786 , H01L29/775
摘要： A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure is nano-scale semiconductor structure. The second electrode is located on the second end.
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公开(公告)号：US10199513B2
公开(公告)日：2019-02-05
申请号：US15846224
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
IPC分类号： H01L51/00 , H01L51/05 , H01L29/87 , H01L27/08 , H01L29/47 , H01L29/49 , H01L29/06 , H01L29/872 , H01L29/20 , H01L29/16 , H01L29/04 , H01L29/417 , H01L29/24 , H01L29/786
摘要： A Schottky diode includes a first electrode, a second electrode and a semiconducting structure. The first electrode includes a first metal layer and a second metal layer. The second electrode includes a third metal layer and a fourth metal layer. The semiconductor structure includes a first end and a second end. The first end is sandwiched by the first metal layer and the second metal layer, the second end is sandwiched by the third metal layer and the fourth metal layer. The semiconductor structure is a nano-scale semiconductor structure.
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公开(公告)号：US10177199B2
公开(公告)日：2019-01-08
申请号：US15145733
申请日：2016-05-03
发明人： Yu-Dan Zhao , Qun-Qing Li , Xiao-Yang Xiao , Guan-Hong Li , Yuan-Hao Jin , Shou-Shan Fan
摘要： A method for making a metal oxide semiconductor carbon nanotube thin film transistor circuit. A p-type carbon nanotube thin film transistor and a n-type carbon nanotube thin film transistor are formed on an insulating substrate and stacked with each other. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.
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公开(公告)号：US10431662B2
公开(公告)日：2019-10-01
申请号：US15817520
申请日：2017-11-20
发明人： Yu-Jia Huo , Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Tian-Fu Zhang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L29/423 , H01L21/02 , H01L51/00 , H01L29/16 , H01L29/06 , H01L29/24 , C08L67/02 , H01L29/66 , H01L51/05 , H01L29/786
摘要： The disclosure relates to a thin film transistor and a method for making the same. The thin film transistor includes a substrate; a semiconductor layer on the substrate, wherein the semiconductor layer includes nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are on the substrate, spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer on the semiconductor layer, wherein the dielectric layer includes a first sub-dielectric layer and a second sub-dielectric layer stacked on one another, and the first sub-dielectric layer is a first oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the first sub-dielectric layer. The thin film transistor almost has no current hysteresis.
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公开(公告)号：US10326089B2
公开(公告)日：2019-06-18
申请号：US15817540
申请日：2017-11-20
发明人： Yu-Dan Zhao , Yu-Jia Huo , Xiao-Yang Xiao , Ying-Cheng Wang , Tian-Fu Zhang , Yuan-Hao Jin , Qun-Qing Li , Shou-Shan Fan
IPC分类号： H01L29/745 , H01L51/05 , H01L29/786 , H01L21/285 , H01L27/12 , H01L27/32 , H01L51/00 , H01L29/51 , H03K19/094 , H01L27/06 , H01L29/778
摘要： The disclosure relates to a logic circuit. The logic circuit includes a n-type thin film transistor and a p-type thin film transistor. Each thin film transistor includes a substrate; a semiconductor layer including nano-scaled semiconductor materials; a source and a drain, wherein the source and the drain are spaced apart from each other, and electrically connected to the semiconductor layer; a dielectric layer covering the semiconductor layer, wherein the dielectric layer includes a normal dielectric layer and an abnormal dielectric layer stacked on one another, and the abnormal dielectric layer is an oxide dielectric layer grown by magnetron sputtering; and a gate in direct contact with the abnormal dielectric layer. The n-type thin film transistor and the p-type thin film transistor share the same substrate and the same gate.
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公开(公告)号：US10192930B2
公开(公告)日：2019-01-29
申请号：US15927293
申请日：2018-03-21
发明人： Yu-Dan Zhao , Qun-Qing Li , Xiao-Yang Xiao , Guan-Hong Li , Yuan-Hao Jin , Shou-Shan Fan
摘要： A metal oxide semiconductor carbon nanotube thin film transistor circuit includes a p-type carbon nanotube thin film transistor and an n-type carbon nanotube thin film transistor stacked on one another. The p-type carbon nanotube thin film transistor includes a first semiconductor carbon nanotube layer, a first drain electrode, a first source electrode, a functional dielectric layer, and a first gate electrode. The n-type carbon nanotube thin film transistor includes a second semiconductor carbon nanotube layer, a second drain electrode, a second source electrode, a first insulating layer, and a second gate electrode. The first drain electrode and the second drain electrode are electrically connected with each other. The first gate electrode and the second gate electrode are electrically connected with each other.
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公开(公告)号：US20180212171A1
公开(公告)日：2018-07-26
申请号：US15846213
申请日：2017-12-19
发明人： Yu-Dan Zhao , Xiao-Yang Xiao , Ying-Cheng Wang , Yuan-Hao Jin , Tian-Fu Zhang , Qun-Qing Li
CPC分类号： H01L51/0579 , H01L51/0005 , H01L51/0048
摘要： A Schottky diode includes an insulating substrate and at least one Schottky diode unit. The at least one Schottky diode unit is located on a surface of the insulating substrate. The at least one Schottky diode unit includes a first electrode, a semiconductor structure and a second electrode. The semiconductor structure comprising a first end and a second end. The first end is laid on the first electrode, the second end is located on the surface of the insulating substrate. The semiconducting structure includes a carbon nanotube structure. The second electrode is located on the second end.
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