公开(公告)号：US5955770A

公开(公告)日：1999-09-21

申请号：US877911

申请日：1997-06-18

申请人： Tsiu C. Chan ,  Gregory C. Smith

发明人： Tsiu C. Chan ,  Gregory C. Smith

IPC分类号： H01L21/336 ,  H01L29/08 ,  H01L29/417 ,  H01L29/78 ,  H01L29/94

CPC分类号： H01L29/6659 ,  H01L29/0847 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/66628 ,  H01L29/7833

摘要： A method is provided for forming a planar transistor of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of field oxide regions are formed overlying a substrate electrically isolating a plurality of transistors encapsulated in a dielectric. LDD regions are formed in the substrate adjacent the transistors and the field oxide regions. Doped polysilicon raised source and drain regions are formed overlying the LDD regions and a tapered portion of the field oxide region and adjacent the transistor. These polysilicon raised source and drain regions will help to prevent any undesired amount of the substrate silicon from being consumed, reducing the possibility of junction leakage and punchthrough as well as providing a more planar surface for subsequent processing steps.

摘要翻译： 提供一种用于形成半导体集成电路的平面晶体管的方法和根据该集成电路形成的集成电路。 形成多个场氧化物区域，覆盖基板，电绝缘封装在电介质中的多个晶体管。 LDD区域形成在与晶体管和场氧化物区域相邻的衬底中。 掺杂的多晶硅凸起的源极和漏极区域形成为覆盖LDD区域和场氧化物区域的锥形部分并且与晶体管相邻。 这些多晶硅升高的源极和漏极区域将有助于防止任何不希望量的衬底硅被消耗，减少了结漏电和穿透的可能性，并且为随后的处理步骤提供了更平的表面。

公开(公告)号：US5682055A

公开(公告)日：1997-10-28

申请号：US480857

申请日：1995-06-07

申请人： Kuei-wu Huang ,  Tsiu C. Chan ,  Gregory C. Smith

发明人： Kuei-wu Huang ,  Tsiu C. Chan ,  Gregory C. Smith

IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/762 ,  H01L21/768 ,  H01L29/08 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/94 ,  H01L29/04

CPC分类号： H01L29/6659 ,  H01L21/28123 ,  H01L21/762 ,  H01L29/0847 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/42316 ,  H01L29/66628 ,  H01L29/7833

摘要： A method is provided for forming an improved planar structure of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A field oxide is grown across the integrated circuit patterned and etched to form an opening with substantially vertical sidewalls exposing a portion of an upper surface of a substrate underlying the field oxide where an active area will be formed. A gate electrode comprising a polysilicon gate electrode and a gate oxide are formed over the exposed portion of the substrate. The polysilicon gate has a height at its upper surface above the substrate at or above the height of the upper surface of the field oxide. The gate electrode preferably also comprises a silicide above the polysilicon and an oxide capping layer above the silicide. LDD regions are formed in the substrate adjacent the gate electrode and sidewall spacers are formed along the sides of the gate electrode including the silicide and the capping layer.

摘要翻译： 提供一种用于形成半导体集成电路的改进的平面结构的方法和根据该集成电路形成的集成电路。 跨越集成电路生长的场氧化物被图案化和蚀刻以形成具有基本上垂直的侧壁的开口，暴露出将形成有源区域的场氧化物下面的衬底的上表面的一部分。 在衬底的暴露部分上形成包括多晶硅栅电极和栅极氧化物的栅电极。 多晶硅栅极在场氧化物的上表面的高度处或其上方的衬底上方具有高度。 栅极优选还包括多晶硅上方的硅化物和硅化物上方的氧化物覆盖层。 LDD区域形成在与栅电极相邻的衬底中，并且沿着包括硅化物和覆盖层的栅电极的侧面形成侧壁间隔物。

公开(公告)号：US06410985B1

公开(公告)日：2002-06-25

申请号：US09563958

申请日：2000-05-02

申请人： Tsiu C. Chan ,  Anthony M. Chiu ,  Gregory C. Smith

发明人： Tsiu C. Chan ,  Anthony M. Chiu ,  Gregory C. Smith

IPC分类号： H01L2348

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

摘要： Silver interconnects are formed by etching deep grooves into an insulating layer over the contact regions, exposing portions of the contact regions and defining the interconnects. The grooves are etched with a truncated V- or U-shape, wider at the top than at any other vertical location, and have a minimum width of 0.25 &mgr;m or less. An optional adhesion layer and a barrier layer are sputtered onto surfaces of the groove, including the sidewalls, followed by sputter deposition of a seed layer. Where aluminum is employed as the seed layer, a zincating process may then be optionally employed to promote adhesion of silver to the seed layer. The groove is then filled with silver by plating in a silver solution, or with silver and copper by plating in a copper solution followed by plating in a silver solution. The filled groove which results does not exhibit voids ordinarily resulting from sputter deposition of metal into such narrow, deep grooves, although seams may be intermittently present in portions of the filled groove where metal plated from the opposing sidewalls did not fuse flawlessly at the point of convergence. Portions of the silver and other layers above the insulating material are then removed by chemical-mechanical polishing, leaving a silver interconnect connected to the exposed portion of the contact region and extending over adjacent insulating regions to another contact region or a bond pad. Silver interconnects thus formed may have smaller cross-sections, and thus a greater density in a given area, than conventional metallic interconnects.

摘要翻译： 通过在接触区域上将深槽蚀刻成绝缘层，暴露接触区域的部分并限定互连形成银互连。 凹槽被蚀刻成具有截顶的V形或U形，在顶部比在任何其它垂直位置处更宽，并且具有0.25μm或更小的最小宽度。 将可选的粘合层和阻挡层溅射到包括侧壁的凹槽的表面上，然后溅射沉积种子层。 当铝用作种子层时，可以任选地使用锌化工艺以促进银与种子层的粘附。 然后通过在银溶液中电镀银，或者通过在铜溶液中电镀银和铜，然后在银溶液中电镀来填充槽。 导致的填充凹槽通常不会由金属溅射沉积到这样窄的深沟槽中而产生空隙，尽管接缝可以间歇地存在于填充凹槽的部分中，其中从相对的侧壁电镀的金属在 收敛。 然后通过化学机械抛光去除绝缘材料上方的银和其它层的部分，留下连接到接触区域的暴露部分并在相邻绝缘区域上延伸到另一接触区域或接合焊盘的银互连。 如此形成的银互连可以具有比常规金属互连更小的横截面，并且因此在给定区域中具有更大的密度。

公开(公告)号：US6100194A

公开(公告)日：2000-08-08

申请号：US102431

申请日：1998-06-22

申请人： Tsiu C. Chan ,  Anthony M. Chiu ,  Gregory C. Smith

发明人： Tsiu C. Chan ,  Anthony M. Chiu ,  Gregory C. Smith

IPC分类号： C23C18/31 ,  C25D3/46 ,  C25D7/12 ,  H01L21/288 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/52 ,  H01L23/532 ,  H01L21/4763

CPC分类号： H01L21/76873 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53242 ,  H01L23/53252 ,  H01L2221/1089 ,  H01L2924/0002

摘要： Silver interconnects are formed by etching deep grooves into an insulating layer over the contact regions, exposing portions of the contact regions and defining the interconnects. The grooves are etched with a truncated V- or U-shape, wider at the top than at any other vertical location, and have a minimum width of 0.25 .mu.m or less. An optional adhesion layer and a barrier layer are sputtered onto surfaces of the groove, including the sidewalls, followed by sputter deposition of a seed layer. Where aluminum is employed as the seed layer, a zincating process may then be optionally employed to promote adhesion of silver to the seed layer. The groove is then filled with silver by plating in a silver solution, or with silver and copper by plating in a copper solution followed by plating in a silver solution. The filled groove which results does not exhibit voids ordinarily resulting from sputter deposition of metal into such narrow, deep grooves, although seams may be intermittently present in portions of the filled groove where metal plated from the opposing sidewalls did not fuse flawlessly at the point of convergence. Portions of the silver and other layers above the insulating material are then removed by chemical-mechanical polishing, leaving a silver interconnect connected to the exposed portion of the contact region; and extending over adjacent insulating regions to another contact region or a bond pad. Silver interconnects thus formed may have smaller cross-sections, and thus a greater density in a given area, than conventional metallic interconnects.

摘要翻译： 通过在接触区域上将深槽蚀刻成绝缘层，暴露接触区域的部分并限定互连形成银互连。 蚀刻具有截断的V形或U形的凹槽，在顶部比在任何其它垂直位置处更宽，并且具有0.25μm或更小的最小宽度。 将可选的粘合层和阻挡层溅射到包括侧壁的凹槽的表面上，然后溅射沉积种子层。 当铝用作种子层时，可以任选地使用锌化工艺以促进银与种子层的粘附。 然后通过在银溶液中电镀银，或者通过在铜溶液中电镀银和铜，然后在银溶液中电镀来填充槽。 导致的填充凹槽通常不会由金属溅射沉积到这样窄的深沟槽中而产生空隙，尽管接缝可以间歇地存在于填充凹槽的部分中，其中从相对的侧壁电镀的金属在 收敛。 然后通过化学机械抛光去除绝缘材料上方的银和其它层的部分，留下连接到接触区域的暴露部分的银互连; 并且在相邻的绝缘区域上延伸到另一个接触区域或接合焊盘。 如此形成的银互连可以具有比常规金属互连更小的横截面，并且因此在给定区域中具有更大的密度。

公开(公告)号：US5683924A

公开(公告)日：1997-11-04

申请号：US486347

申请日：1995-06-07

申请人： Tsiu C. Chan ,  Gregory C. Smith

发明人： Tsiu C. Chan ,  Gregory C. Smith

IPC分类号： H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/08 ,  H01L29/417 ,  H01L29/45 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L29/6659 ,  H01L21/28518 ,  H01L29/0847 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/456 ,  H01L29/66628 ,  H01L29/7833

摘要： A method is provided for forming a planar transistor of a semiconductor integrated circuit, and an integrated circuit formed according to the same. A plurality of field oxide regions are formed overlying a substrate electrically isolating a plurality of transistors encapsulated in a dielectric. LDD regions are formed in the substrate adjacent the transistors and the field oxide regions. Doped polysilicon raised source and drain regions are formed overlying the LDD regions and a tapered portion of the field oxide region and adjacent the transistor. These polysilicon raised source and drain regions will help to prevent any undesired amount of the substrate silicon from being consumed, reducing the possibility of junction leakage and punchthrough as well as providing a more planar surface for subsequent processing steps.

摘要翻译： 提供一种用于形成半导体集成电路的平面晶体管的方法和根据该集成电路形成的集成电路。 形成多个场氧化物区域，覆盖基板，电绝缘封装在电介质中的多个晶体管。 LDD区域形成在与晶体管和场氧化物区域相邻的衬底中。 掺杂的多晶硅凸起的源极和漏极区域形成为覆盖LDD区域和场氧化物区域的锥形部分并且与晶体管相邻。 这些多晶硅升高的源极和漏极区域将有助于防止任何不希望量的衬底硅被消耗，减少了结漏电和穿透的可能性，并且为随后的处理步骤提供了更平的表面。

公开(公告)号：US07712460B2

公开(公告)日：2010-05-11

申请号：US11820486

申请日：2007-06-19

申请人： Miroslav A. Simo ,  Gregory C. Smith

发明人： Miroslav A. Simo ,  Gregory C. Smith

IPC分类号： F41B5/18

CPC分类号： F41B5/1469 ,  F41B5/1415

摘要： A release device with a follow-through or recoil motion for use with mechanically launched projectiles. A recoil motion is in a direction opposite the path of the projectile. Releasing an arrow from a bow provides correct form and follow-through motion of a user hand directly opposite to a direction of a path of the launched arrow, to improve flight accuracy. The release device includes a housing, a trigger, a keeper and a recoil assembly. This invention also relates to a method of using the release device.

摘要翻译： 具有随机或反冲运动的释放装置，用于机械发射的射弹。 反冲运动在与弹丸的路径相反的方向。 从箭头释放箭头可以提供正确的形式和用户手的直接运动，直接与发射箭头的路径方向相对，以提高飞行精度。 释放装置包括壳体，触发器，保持器和反冲组件。 本发明还涉及一种使用该释放装置的方法。

公开(公告)号：US07710396B2

公开(公告)日：2010-05-04

申请号：US11329876

申请日：2006-01-11

申请人： Gregory C. Smith ,  Thomas J. Quinn ,  James J. Leftwich

发明人： Gregory C. Smith ,  Thomas J. Quinn ,  James J. Leftwich

IPC分类号： G09G5/08

CPC分类号： H04N21/812 ,  G06F3/017 ,  G06F3/0346 ,  G06F3/0354 ,  G06F3/0481 ,  G08C2201/32 ,  G11B15/023 ,  G11B19/025 ,  H04N5/4403 ,  H04N5/44582 ,  H04N5/76 ,  H04N21/42222 ,  H04N21/47 ,  H04N2005/4432

摘要： A user interface for multimedia centers advantageously utilizes hand-held inertial-sensing user input devices to select channels and quickly navigate the dense menus of options. Extensive use of the high resolution and bandwidth of such user input devices is combined with strategies to avoid unintentional inputs and with dense and intuitive interactive graphical displays.

公开(公告)号：US06794757B1

公开(公告)日：2004-09-21

申请号：US08866456

申请日：1997-05-30

申请人： Gregory C. Smith

发明人： Gregory C. Smith

IPC分类号： H01L2348

CPC分类号： H01L23/5226 ,  H01L21/76804 ,  H01L23/485 ,  H01L2924/0002 ,  Y10S438/97 ,  H01L2924/00

摘要： The contact opening through an insulating layer is formed having a straight sidewall portion and a bowl shaped sidewall portion. The bowl shaped sidewall portion is near the top of the insulation layer to provide an enlarged diameter of the contact opening at the top relative to the bottom. A conductive material is then formed in the contact opening in electrical contact with a lower conductive layer. The conductive material forms a plug having an enlarged head, such as a nail head or a flat heat screw shape. The enlarged head protects the silicon and a barrier layer, if present, within the contact from being etched by any subsequent anisotropic etches. Thus, when an electrical interconnection layer such as aluminum is formed overlying the contact plug, the plug acts as an etch stop to prevent etching of a barrier layer of the barrier layer within the contact opening.

摘要翻译： 通过绝缘层的接触开口形成为具有直的侧壁部分和碗形的侧壁部分。 碗状侧壁部分靠近绝缘层的顶部，以在顶部相对于底部提供接触开口的扩大直径。 然后在接触开口中形成与下导电层电接触的导电材料。 导电材料形成具有扩大的头部的塞子，例如钉头或平的热螺丝形状。 扩大的头部保护硅和阻挡层（如果存在）在接触件内被任何随后的各向异性蚀刻腐蚀。 因此，当诸如铝的电互连层形成在接触插塞上方时，插塞充当蚀刻停止件，以防止在接触开口内蚀刻阻挡层的阻挡层。

公开(公告)号：US6158728A

公开(公告)日：2000-12-12

申请号：US452426

申请日：1999-12-01

申请人： Gregory C. Smith

发明人： Gregory C. Smith

IPC分类号： B25B5/00 ,  B25B5/10 ,  B23Q3/02

CPC分类号： B25B5/006 ,  B25B5/104 ,  B25B5/105

摘要： A workpiece holding device for a T-slotted machine table includes a locator block having a planar bottom surface, a mounting hole that intersects the bottom surface to define a center point, at least one workpiece locating surface disposed a predetermined distance from the center point, and a key protruding from the bottom surface at a second point offset a predetermined distance from the center point. The protruding portion of the key has a width substantially the same as the T-slot opening so as to slidably mount in the T-slot. A fastener extends through the mounting hole and secures the locator block to a T-nut slidably mounted in the T-slot. A clamp secured to the locator block clamps the workpiece to the locating surface of the locator block. A method of using the device is also disclosed.

摘要翻译： 一种用于T型开槽机床的工件保持装置包括：具有平坦底面的定位块，与底面相交以限定中心点的安装孔，设置在离中心点一定距离的至少一个工件定位面， 以及在距离中心点偏移预定距离的第二点处从底表面突出的键。 键的突出部分具有与T形槽开口基本相同的宽度，从而可滑动地安装在T形槽中。 紧固件延伸穿过安装孔并将定位块固定到可滑动地安装在T形槽中的T形螺母。 固定到定位块的夹具将工件夹紧到定位块的定位表面。 还公开了使用该装置的方法。

公开(公告)号：US08340420B2

公开(公告)日：2012-12-25

申请号：US12573556

申请日：2009-10-05

申请人： Gregory C. Smith ,  Shana S. Smith

发明人： Gregory C. Smith ,  Shana S. Smith

IPC分类号： G06K9/00 ,  G06K9/34

CPC分类号： G06K9/4647 ,  G06K9/00818

摘要： A method for recognizing objects in images is disclosed. The method of the present invention comprises the following steps. First, acquire a digital image. Then, select one or more objects from the image according to a certain characteristic. Next, generate an x-axis histogram and/or a y-axis histogram from the segmented image. Then, find the zeroes and maxima for the x-axis histogram and/or the y-axis histogram and use the polynomial regression analysis to determine the shape, shape and location of each of the objects in the segmented image according to the zeroes and maxima. If the two curves linking two zeroes and one maximum in the x-axis histogram and the y-axis histogram are two sloped line, the corresponding object may be determined to be a triangle. If each of the four curves linking two zeroes and two maxima is a line, the corresponding object may be determined to be a rectangle.

摘要翻译： 公开了一种用于识别图像中的对象的方法。 本发明的方法包括以下步骤。 首先，获取数字图像。 然后，根据某一特性从图像中选择一个或多个对象。 接下来，从分割图像生成x轴直方图和/或y轴直方图。 然后，找到x轴直方图和/或y轴直方图的零点和最大值，并使用多项式回归分析根据零点和最大值确定分割图像中每个对象的形状，形状和位置 。 如果在x轴直方图和y轴直方图中连接两个零和一个最大值的两条曲线是两条倾斜线，则可以将相应的对象确定为三角形。 如果链接两个零和两个最大值的四个曲线中的每一个是一行，则相应的对象可以被确定为矩形。