公开(公告)号：US20090321017A1

公开(公告)日：2009-12-31

申请号：US12206021

申请日：2008-09-08

申请人： Tsunehiko Tsubone ,  Hiroho Kitada ,  Yosuke Sakai ,  Ken Yoshioka ,  Yutaka Omoto ,  Mamoru Yakushiji ,  Yutaka Kouzuma

发明人： Tsunehiko Tsubone ,  Hiroho Kitada ,  Yosuke Sakai ,  Ken Yoshioka ,  Yutaka Omoto ,  Mamoru Yakushiji ,  Yutaka Kouzuma

IPC分类号： C23F1/00

CPC分类号： H01L21/67109 ,  H01J2237/2001 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/6831

摘要： There is disclosed a plasma processing apparatus wherein a sample placed on the top surface of the sample table located within the processing chamber contained in a vacuum vessel is processed with plasma formed in the processing chamber, comprising a set of ducts cut within the sample table through which cooling medium flows; a film-shaped heater whose heating elements are concentrically embedded in the dielectric film serving as the top surface of the sample table; plural temperature controllers which set up the temperature of the cooling medium flowing through the ducts at different values, respectively; and a control unit which switches over the circulations through the ducts of the cooling medium supplied from the plural temperature controllers.

摘要翻译： 公开了一种等离子体处理装置，其中放置在位于真空容器中的处理室内的样品台的顶表面上的样品用处理室中形成的等离子体进行处理，其包括在样品台内切割的一组导管 哪个冷却介质流动？ 其加热元件同心地嵌入在作为样品台的顶表面的电介质膜中的膜状加热器; 多个温度控制器分别设置以不同的值流过管道的冷却介质的温度; 以及控制单元，其通过从多个温度控制器供给的冷却介质的管道切换循环。

公开(公告)号：US20060291132A1

公开(公告)日：2006-12-28

申请号：US11370102

申请日：2006-03-08

申请人： Seiichiro Kanno ,  Tsunehiko Tsubone ,  Masakazu Isozaki ,  Toshio Masuda ,  Go Miya ,  Hiroho Kitada ,  Tooru Aramaki

发明人： Seiichiro Kanno ,  Tsunehiko Tsubone ,  Masakazu Isozaki ,  Toshio Masuda ,  Go Miya ,  Hiroho Kitada ,  Tooru Aramaki

IPC分类号： H01T23/00

CPC分类号： H01L21/67109 ,  H01L21/67103 ,  H01L21/6831

摘要： An electrostatic chuck which is built in a heater and can change, at a high speed, the temperature distribution of a wafer being processed by a plasma is provided at low cost. Also, there is provided a processing method which realizes uniform etching by suppressing CD variations in the plane of the wafer even when etching conditions change. The electrostatic chuck includes a base material in which multiple coolant grooves are formed, a high resistance layer which is formed on the base material, multiple heaters which are formed by thermally spraying conductors within the high resistance layer, multiple electrostatic chuck electrodes which are formed similarly by thermally spraying conductors within the high resistance layer, and temperature measuring means, and adjusts outputs of the heaters on the basis of temperature information of the temperature measuring means.

摘要翻译： 以低成本提供内置在加热器中并能够以高速度改变由等离子体处理的晶片的温度分布的静电卡盘。 此外，提供了一种通过抑制晶片的平面中的CD变化即使在蚀刻条件改变时实现均匀蚀刻的处理方法。 静电卡盘包括形成有多个冷却剂槽的基材，形成在基材上的高电阻层，通过热喷涂高电阻层内的导体形成的多个加热器，形成类似的多个静电卡盘电极 通过热电喷涂高电阻层内的导体和温度测量装置，并且基于温度测量装置的温度信息来调节加热器的输出。

公开(公告)号：US20090178764A1

公开(公告)日：2009-07-16

申请号：US12073082

申请日：2008-02-29

申请人： Seiichiro Kanno ,  Tsunehiko Tsubone ,  Hiroho Kitada

发明人： Seiichiro Kanno ,  Tsunehiko Tsubone ,  Hiroho Kitada

IPC分类号： H01L21/3065

CPC分类号： H01L21/67103 ,  H01L21/6831

摘要： A plasma processing apparatus is provided that includes a heater-built-in electrostatic chuck, prevents a direct-current potential difference from being made in the plane of a wafer during plasma processing, and performs plasma processing while controlling the temperature of the wafer with good responsiveness without damaging a semiconductor device. The heater-built-in electrostatic chuck of the plasma processing apparatus has a structure in which an insulator, two heaters, an insulator, two electrostatic chuck electrodes having approximately identical areas, and a dielectric film are laminated in ascending order on a conductive base material to which a bias voltage is to be applied. The heaters have approximately identical areas, and are disposed below the two electrostatic chuck electrodes, respectively. Power is provided to the heaters via a low-path filter and a coaxial cable.

摘要翻译： 提供一种等离子体处理装置，其包括加热器内置的静电卡盘，防止在等离子体处理期间在晶片的平面中产生直流电位差，并且在良好地控制晶片的温度的同时进行等离子体处理 响应性而不损坏半导体器件。 等离子体处理装置的加热器内置的静电卡盘具有这样的结构，其中绝缘体，两个加热器，绝缘体，具有近似相同面积的两个静电卡盘电极和电介质膜以升序层叠在导电基材上 施加偏置电压。 加热器具有大致相同的面积，分别设置在两个静电吸盘电极的下方。 通过低通滤波器和同轴电缆将功率提供给加热器。

公开(公告)号：US08828257B2

公开(公告)日：2014-09-09

申请号：US12379641

申请日：2009-02-26

申请人： Hiroho Kitada ,  Kazunori Nakamoto ,  Yosuke Sakai

发明人： Hiroho Kitada ,  Kazunori Nakamoto ,  Yosuke Sakai

IPC分类号： H05H1/00 ,  H01L21/306 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01J37/32 ,  H01L21/687

CPC分类号： H01L21/68742 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/20

摘要： In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage.

摘要翻译： 在等离子体处理装置中，包括在真空容器中的处理室，以在压力降低的处理室中形成等离子体，处理室内部的下部的样品台，其上表面上加有待处理的晶片 通过等离子体放置，样品台中的多个针在垂直方向上移动，使得销抵靠晶片的后侧，以将晶片上下移动到样品台的上表面上，并且多个 形成在样品台的上表面中的开口，使得销在开口中移动，当晶片未放置在样品的上表面上时，气体通过开口从与开口连通的供应端口进入处理室 阶段。

公开(公告)号：US20100163403A1

公开(公告)日：2010-07-01

申请号：US12379641

申请日：2009-02-26

申请人： Hiroho Kitada ,  Kazunori Nakamoto ,  Yosuke Sakai

发明人： Hiroho Kitada ,  Kazunori Nakamoto ,  Yosuke Sakai

IPC分类号： H05H1/00 ,  H01L21/306

CPC分类号： H01L21/68742 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/20

摘要： In a plasma processing apparatus including a processing chamber in a vacuum container to form plasma in the processing chamber in which pressure is reduced, a sample stage in lower part of inside of the processing chamber and having an upper surface on which a wafer to be processed by plasma is put, a plurality of pins in the sample stage to be moved in vertical direction so that the pins abut against rear side of the wafer to move the wafer up and down over the upper surface of the sample stage, and a plurality of openings formed in the upper surface of the sample stage so that the pins are moved in the openings, gas is fed from supply ports communicating with the openings into the processing chamber through the openings when the wafer is not put on the upper surface of the sample stage.

摘要翻译： 在等离子体处理装置中，包括在真空容器中的处理室，以在压力降低的处理室中形成等离子体，处理室内部的下部的样品台，其上表面上加有待处理的晶片 通过等离子体放置，样品台中的多个针在垂直方向上移动，使得销抵靠晶片的后侧，以将晶片上下移动到样品台的上表面上，并且多个 形成在样品台的上表面中的开口，使得销在开口中移动，当晶片未放置在样品的上表面上时，气体通过开口从与开口连通的供应端口进入处理室 阶段。

公开(公告)号：US20050193951A1

公开(公告)日：2005-09-08

申请号：US10793782

申请日：2004-03-08

申请人： Muneo Furuse ,  Masanori Kadotani ,  Masatsugu Arai ,  Hiroho Kitada

发明人： Muneo Furuse ,  Masanori Kadotani ,  Masatsugu Arai ,  Hiroho Kitada

IPC分类号： C23C16/00 ,  C23F1/00

CPC分类号： H01L21/68757 ,  H01J37/32559

摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.

摘要翻译： 本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。 等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面 位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体的材料并且包括Y 2 或其混合物作为其主要组分，其中R 1，R 2，R 3，R 3，R 3，R 3，

公开(公告)号：US20130053997A1

公开(公告)日：2013-02-28

申请号：US13236818

申请日：2011-09-20

申请人： Tomohiro Ohashi ,  Akitaka Makino ,  Hiroho Kitada ,  Hideki Kihara

发明人： Tomohiro Ohashi ,  Akitaka Makino ,  Hiroho Kitada ,  Hideki Kihara

IPC分类号： B25J9/10 ,  B25J13/08

CPC分类号： H01L21/68 ,  H01L21/67742 ,  Y10S901/03 ,  Y10S901/46

摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.

摘要翻译： 真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。 调整装置根据预先执行的教学动作的结果调整机器人的动作。 在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

公开(公告)号：US20080314321A1

公开(公告)日：2008-12-25

申请号：US12203804

申请日：2008-09-03

申请人： Muneo FURUSE ,  Masanori Kadotani ,  Masatsugu Arai ,  Hiroho Kitada

发明人： Muneo FURUSE ,  Masanori Kadotani ,  Masatsugu Arai ,  Hiroho Kitada

IPC分类号： C23C16/458

CPC分类号： H01L21/68757 ,  H01J37/32559

摘要： The object of the present invention is to provide a plasma processing apparatus capable of processing a substrate stably for a long period of time. The plasma processing apparatus has a substrate holder disposed in a processing chamber and an electrode cover for protecting a support stage of said substrate holder, for processing a wafer placed on said support stage using a plasma generated in the processing chamber, wherein at least a surface of said electrode cover that is positioned directly below an edge of the wafer, or at least a surface of said electrode cover that comes into contact with plasma, is coated with a material having resistance to plasma and comprising Y2O3, Yb2O3 or YF3, or a mixture thereof, as its main component.

摘要翻译： 本发明的目的是提供能够长时间稳定地处理基板的等离子体处理装置。 等离子体处理装置具有设置在处理室中的基板保持器和用于保护所述基板保持器的支撑台的电极盖，用于使用在处理室中产生的等离子体来处理放置在所述支撑台上的晶片，其中至少一个表面 位于晶片边缘正下方的至少一个与等离子体接触的电极盖的表面的电极盖被涂覆有耐等离子体并包含Y 2 O 3，Yb 2 O 3或YF 3的材料，或 它们的主要成分。

公开(公告)号：US20060157198A1

公开(公告)日：2006-07-20

申请号：US11065084

申请日：2005-02-25

申请人： Muneo Furuse ,  Masanori Kadotani ,  Hiroho Kitada ,  Shingo Kimura

发明人： Muneo Furuse ,  Masanori Kadotani ,  Hiroho Kitada ,  Shingo Kimura

IPC分类号： H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01J37/3255 ,  H01J37/32009

摘要： Provided is a plasma processing apparatus, which comprises, as a member facing plasma in a plasma processing chamber, a member composed of a material prepared by incorporating a conductive material in quartz or germanium which is an amorphous base material.

摘要翻译： 提供了一种等离子体处理装置，其包括作为在等离子体处理室中面向等离子体的构件，由通过将石英或锗中的导电材料并入作为非晶基材而制备的材料构成的构件。

公开(公告)号：US20080023139A1

公开(公告)日：2008-01-31

申请号：US11512116

申请日：2006-08-30

申请人： Naoki Yasui ,  Hiroho Kitada

发明人： Naoki Yasui ,  Hiroho Kitada

IPC分类号： H01L21/306 ,  C23F1/00 ,  C23C16/00

CPC分类号： H01L21/6833 ,  H01J2237/2001

摘要： The invention relates to a plasma processing apparatus and a plasma processing method and particularly relates to a plasma processing apparatus suitable for executing an etching processing of a work by using plasma.

摘要翻译： 等离子体处理装置和等离子体处理方法技术领域本发明涉及等离子体处理装置和等离子体处理方法，特别涉及一种适用于通过使用等离子体执行工件的蚀刻处