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    VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD
    1.
    发明申请
    VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD 有权
    真空加工设备和真空加工方法

    公开(公告)号：US20130053997A1

    公开(公告)日：2013-02-28

    申请号：US13236818

    申请日：2011-09-20

    申请人： Tomohiro Ohashi ,  Akitaka Makino ,  Hiroho Kitada ,  Hideki Kihara

    发明人： Tomohiro Ohashi ,  Akitaka Makino ,  Hiroho Kitada ,  Hideki Kihara

    IPC分类号： B25J9/10 ,  B25J13/08

    CPC分类号： H01L21/68 ,  H01L21/67742 ,  Y10S901/03 ,  Y10S901/46

    摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.

    摘要翻译： 真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。 调整装置根据预先执行的教学动作的结果调整机器人的动作。 在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

    Wafer processing based on sensor detection and system learning
    2.
    发明授权
    Wafer processing based on sensor detection and system learning 有权
    基于传感器检测和系统学习的晶片处理

    公开(公告)号：US08897906B2

    公开(公告)日：2014-11-25

    申请号：US13236818

    申请日：2011-09-20

    申请人： Tomohiro Ohashi ,  Akitaka Makino ,  Hiroho Kitada ,  Hideki Kihara

    发明人： Tomohiro Ohashi ,  Akitaka Makino ,  Hiroho Kitada ,  Hideki Kihara

    IPC分类号： H01L21/68 ,  H01L21/677

    CPC分类号： H01L21/68 ,  H01L21/67742 ,  Y10S901/03 ,  Y10S901/46

    摘要： A vacuum processing apparatus includes a robot connected to a vacuum container to carry a wafer on one of its two arms to or from a processing chamber; a unit to detect an amount of deviation of the wafer from a predetermined wafer mounting position on the arm that may occur when the robot carries the wafer into or out of the processing chamber; and an adjusting device to adjust the operation of the robot based on the detected amount of deviation. The adjusting device adjusts the robot operation based on the result of a teaching operation performed in advance. After being subjected to the initial teaching operation, the robot again undergoes a second teaching operation according to the information on the amount of wafer position deviation that is detected by moving the wafer in a predetermined transfer pattern, before the wafer processing is performed.

    摘要翻译： 真空处理装置包括连接到真空容器以将其两个臂中的一个上的晶片携带到处理室或从处理室移动的机器人; 用于检测当机器人将晶片进入或离开处理室时可能发生的晶片与在臂上的预定晶片安装位置的偏移量的单元; 以及基于检测到的偏差量来调整机器人的操作的调整装置。 调整装置根据预先执行的教学动作的结果调整机器人的动作。 在进行初始教导操作之后，根据关于在执行晶片处理之前通过以预定的传送图案移动晶片来检测的晶片位置偏差量的信息，机器人再次进行第二示教操作。

    Plasma processing apparatus and plasma processing method
    3.
    发明授权
    Plasma processing apparatus and plasma processing method 失效
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US08569177B2

    公开(公告)日：2013-10-29

    申请号：US13570433

    申请日：2012-08-09

    申请人： Tomohiro Ohashi ,  Akitaka Makino ,  Hiroho Kitada ,  Muneo Furuse ,  Tomoyuki Tamura

    发明人： Tomohiro Ohashi ,  Akitaka Makino ,  Hiroho Kitada ,  Muneo Furuse ,  Tomoyuki Tamura

    IPC分类号： H01L21/302

    CPC分类号： H01J37/32449

    摘要： A plasma processing apparatus is provided which includes an inert gas supply route connected to a process gas supply piping which supplies a process gas into a processing chamber in a vacuum vessel, a valve which opens or closes the inert gas supply route, and an adjuster which adjusts a flow rate of the inert gas. When processing of a sample is complete, an inert gas is supplied into the process gas supply piping so that a pressure in the process gas supply piping is maintained at a pressure higher than a pressure at which a compound of the process gas and a material of an inner wall of the process gas supply piping vaporizes.

    摘要翻译： 提供了一种等离子体处理装置，其包括连接到处理气体供应管线的惰性气体供给路径，该处理气体供应管路将处理气体供应到真空容器中的处理室中，打开或关闭惰性气体供应路径的阀，以及调节器 调节惰性气体的流量。 当样品的处理完成时，将惰性气体供应到工艺气体供应管道中，使得处理气体供应管道中的压力保持在高于处理气体和化合物的压力的压力 工艺气体供应管道的内壁蒸发。

    FUSED NITROGEN-COMPRISING HETEROCYCLIC COMPOUND
    4.
    发明申请
    FUSED NITROGEN-COMPRISING HETEROCYCLIC COMPOUND 审中-公开
    熔融氮化物杂环化合物

    公开(公告)号：US20100234351A1

    公开(公告)日：2010-09-16

    申请号：US12280228

    申请日：2007-02-22

    申请人： Masaki Seto ,  Tomohiro Ohashi

    发明人： Masaki Seto ,  Tomohiro Ohashi

    IPC分类号： A61K31/55 ,  C07D487/04 ,  A61P35/00 ,  A61K31/519

    CPC分类号： C07D487/04

    摘要： A compound of the formula: wherein ring A is a 7-membered or 8-membered nitrogen-containing ring optionally further substituted, ring B is an optionally substituted aryl group or an optionally substituted heteroaryl group, X1 is a group represented by —NR3—Y1—, —O—, —S—, —SO—, —SO2— or —CHR3— wherein R3 is a hydrogen atom or an optionally substituted aliphatic hydrocarbon group, or R3 may be bonded to the carbon atom of ring B to form an optionally substituted ring structure, and Y1 is a bond or an optionally substituted alkylene, R1 is a hydrogen atom, or an optionally substituted group bonded via a carbon atom or a sulfur atom, the formula shows a single bond or a double bond, when R2 is —R2, R2 is a hydrogen atom, or an optionally substituted group bonded via a carbon atom, a nitrogen atom, an oxygen atom or a sulfur atom, and when R2 is ═R2, R2 is an oxo group, an optionally substituted alkylidene group, or an optionally substituted imino group.

    摘要翻译： 下式的化合物：其中环A为任选进一步取代的7-元或8-元含氮环，环B为任选取代的芳基或任选取代的杂芳基，X 1为-NR 3 - Y 1，-O - ， - S - ， - SO - ， - SO 2 - 或-CHR 3 - ，其中R 3是氢原子或任选取代的脂族烃基，或者R 3可以键合到环B的碳原子上以形成 任选取代的环结构，并且Y 1是键或任选取代的亚烷基，R 1是氢原子或经由碳原子或硫原子键合的任选取代的基团，该式表示单键或双键，当 R2是-R2，R2是氢原子或通过碳原子，氮原子，氧原子或硫原子键合的任选取代的基团，当R 2是= R 2时，R 2是氧代基， 亚烷基或任选取代的亚氨基。

    Vacuum chamber
    6.
    发明授权
    Vacuum chamber 失效
    真空室

    公开(公告)号：US08532818B2

    公开(公告)日：2013-09-10

    申请号：US12712861

    申请日：2010-02-25

    申请人： Tomohiro Ohashi ,  Tsutomu Nakamura ,  Hidenobu Tanimura ,  Michiaki Kobayashi

    发明人： Tomohiro Ohashi ,  Tsutomu Nakamura ,  Hidenobu Tanimura ,  Michiaki Kobayashi

    IPC分类号： G06F7/00

    CPC分类号： H01L21/67766 ,  H01L21/67778

    摘要： A vacuum chamber includes: a vacuum vessel arranged at the backward side, where a wafer of a processing subject is processed inside an internal processing chamber; a transfer chamber arranged at the forward side, where said wafer is transferred at the inside thereof under atmospheric pressure; a cassette stage arranged at the forward of this transfer chamber, where a cassette storing said wafer is mounted; a lock chamber connected with said transfer chamber at the backward of said transfer chamber; a robot arranged inside said transfer chamber, where said wafer is transferred between said cassette and said lock chamber; and an aligning machine for making position of said wafer fit with the predetermined position, wherein the wafer is transferred to said lock chamber, after performing alignment of said wafer on said aligning machine, in the case where displacement amount of position of this wafer is larger than the predetermined value.

    摘要翻译： 真空室包括：设置在后方的真空容器，处理对象的晶片在内部处理室内处理; 传送室，其布置在前侧，其中所述晶片在其大气压下在其内部传送; 设置在该传送室前方的盒级，其中安装有存储所述晶片的盒; 在所述传送室的后方与所述传送室连接的锁定室; 布置在所述传送室内部的机器，其中所述晶片在所述盒和所述锁定室之间传送; 以及用于使所述晶片的位置与所述预定位置配合的对准机，其中在所述晶片位于所述对准机器的位置的位移量较大的情况下，在将所述晶片对准所述对准机器之后，将所述晶片转移到所述锁定室 超过预定值。

    FUSED HETEROCYCLIC COMPOUND
    10.
    发明申请
    FUSED HETEROCYCLIC COMPOUND 审中-公开
    熔融杂环化合物

    公开(公告)号：US20100004238A1

    公开(公告)日：2010-01-07

    申请号：US12518596

    申请日：2007-12-11

    申请人： Tomoyasu Ishikawa ,  Hiroshi Banno ,  Youichi Kawakita ,  Tomohiro Ohashi ,  Osamu Kurasawa

    发明人： Tomoyasu Ishikawa ,  Hiroshi Banno ,  Youichi Kawakita ,  Tomohiro Ohashi ,  Osamu Kurasawa

    IPC分类号： A61K31/5377 ,  C07D487/04 ,  A61K31/519 ,  A61K31/4985

    CPC分类号： C07D487/04

    摘要： The present invention provides a fused heterocyclic compound having a tyrosine kinase inhibitory action, which is represented by the formula: wherein R1 is a hydrogen atom, a halogen atom, or an optionally substituted group bonded via a carbon atom, a nitrogen atom or an oxygen atom; R2 is a hydrogen atom, or an optionally substituted group bonded via a carbon atom or a sulfur atom, or R1 and R2, or R2 and R3 are optionally bonded to each other to form an optionally substituted ring structure; R3 is a hydrogen atom or an optionally substituted aliphatic hydrocarbon group, or R3 is optionally bonded to the carbon atom on ring A to form an optionally substituted ring structure; ring A is an optionally substituted benzene ring; and ring B is (i) an optionally substituted fused ring, or (ii) a pyridine ring having optionally substituted carbamoyl (the pyridine ring is optionally further substituted).

    摘要翻译： 本发明提供具有酪氨酸激酶抑制作用的稠合杂环化合物，其由下式表示：其中R1是氢原子，卤原子或经由碳原子，氮原子或氧键键合的任意取代的基团 原子; R2是氢原子，或通过碳原子或硫原子键合的任选取代的基团，或者R 1和R 2，或R 2和R 3相互结合形成任选取代的环结构; R3是氢原子或任选取代的脂族烃基，或R3任选地键合到环A上的碳原子上以形成任选取代的环结构; 环A是任选取代的苯环; 和环B是（i）任选取代的稠合环，或（ii）具有任选取代的氨基甲酰基的吡啶环（吡啶环任选进一步被取代）。