公开(公告)号：US5463231A

公开(公告)日：1995-10-31

申请号：US353385

申请日：1994-12-02

申请人： Tsuneo Ogura ,  Kiminori Watanabe ,  Akio Nakagawa ,  Yoshihiro Yamaguchi ,  Norio Yasuhara ,  Tomoko Matsudai ,  Shigeru Hasegawa ,  Kazuya Nakayama

发明人： Tsuneo Ogura ,  Kiminori Watanabe ,  Akio Nakagawa ,  Yoshihiro Yamaguchi ,  Norio Yasuhara ,  Tomoko Matsudai ,  Shigeru Hasegawa ,  Kazuya Nakayama

IPC分类号： H01L27/06 ,  H01L29/74 ,  H01L29/745 ,  H01L29/749 ,  H01L31/111

CPC分类号： H01L27/0617 ,  H01L29/7436 ,  H01L29/7455 ,  H01L29/749

摘要： A thyristor with insulated gates includes turn-off and turn-on MOSFETs. The turn-on MOSFET has a turn-on gate employing a p-type base as a channel and extending over an n-type base and an n-type emitter. The turn-off MOSFET has n-type drain and source layers formed in a p-type base layer, and a turn-off gate extending over the drain and source layers. The n-type drain layer is short-circuited with the p-type base layer via a drain electrode. The drain electrode is formed near an n-type emitter layer. When the thyristor is to be turned off, the first voltage is applied to the turn-on gate, and the second voltage is applied to the turn-off gate while the first voltage is applied to the turn-on gate. After the application of the second voltage continues for a predetermined period of time, the application of the first voltage to the turn-on gate is stopped. With this operation, the thyristor can be turned off even with a large current.

公开(公告)号：US5315134A

公开(公告)日：1994-05-24

申请号：US896422

申请日：1992-06-10

申请人： Tsuneo Ogura ,  Kiminori Watanabe ,  Akio Nakagawa ,  Yoshihiro Yamaguchi ,  Norio Yasuhara ,  Tomoko Matsudai

发明人： Tsuneo Ogura ,  Kiminori Watanabe ,  Akio Nakagawa ,  Yoshihiro Yamaguchi ,  Norio Yasuhara ,  Tomoko Matsudai

IPC分类号： H01L29/745 ,  H01L29/74 ,  H01L31/111

CPC分类号： H01L29/7455

摘要： A thyristor with an insulated gate includes a p-type emitter layer, an n-type base layer, a p-type base layer, and an n-type emitter layer. A drain electrode contacting the p-type base layer is formed adjacent to one side of the n-type emitter layer. An n-type drain layer, which is short-circuited with the p-type base layer by the drain electrode, is formed. An n-type source layer is formed a predetermined distance away from the n-type drain layer. A turn-off insulated gate is formed between the n-type source layer and the n-type drain layer. A source electrode is connected to a cathode electrode. Thereby, turn-off capability of the thyristor can be improved.

摘要翻译： 具有绝缘栅的晶闸管包括p型发射极层，n型基极层，p型基极层和n型发射极层。 与p型基极层接触的漏电极与n型发射极层的一侧相邻地形成。 形成了由漏电极与p型基极层短路的n型漏极层。 n型源极层与n型漏极层形成规定的距离。 在n型源极层和n型漏极层之间形成有截止绝缘栅极。 源电极连接到阴极电极。 由此，能够提高晶闸管的关断能力。

公开(公告)号：US5428228A

公开(公告)日：1995-06-27

申请号：US164756

申请日：1993-12-10

申请人： Tsuneo Ogura ,  Kiminori Watanabe ,  Akio Nakagawa ,  Yoshihiro Yamaguchi ,  Norio Yasuhara ,  Tomoko Matsudai ,  Shigeru Hasegawa ,  Kazuya Nakayama

发明人： Tsuneo Ogura ,  Kiminori Watanabe ,  Akio Nakagawa ,  Yoshihiro Yamaguchi ,  Norio Yasuhara ,  Tomoko Matsudai ,  Shigeru Hasegawa ,  Kazuya Nakayama

IPC分类号： H01L27/06 ,  H01L29/74 ,  H01L29/745 ,  H01L29/749 ,  H01L29/747

CPC分类号： H01L27/0617 ,  H01L29/7436 ,  H01L29/7455 ,  H01L29/749

摘要： A thyristor with insulated gates includes turn-off and turn-on MOSFETs. The turn-on MOSFET has a turn-on gate employing a p-type base as a channel and extending over an n-type base and an n-type emitter. The turn-off MOSFET has n-type drain and source layers formed in a p-type base layer, and a turn-off gate extending over the drain and source layers. The n-type drain layer is short-circuited with the p-type base layer via a drain electrode. The drain electrode is formed near an n-type emitter layer. When the thyristor is to be turned off, the first voltage is applied to the turn-on gate, and the second voltage is applied to the turn-off gate while the first voltage is applied to the turn-on gate. After the application of the second voltage continues for a predetermined period of time, the application of the first voltage to the turn-on gate is stopped. With this operation, the thyristor can be turned off even with a large current.

摘要翻译： 具有绝缘栅极的晶闸管包括关断和导通MOSFET。 导通MOSFET具有采用p型基极作为沟道并在n型基极和n型发射极上延伸的导通栅极。 关断MOSFET具有形成在p型基极层中的n型漏极和源极层，以及在漏极和源极层上延伸的截止栅极。 n型漏极层经由漏电极与p型基极层短路。 在n型发射极层附近形成漏电极。 当晶闸管关断时，第一电压被施加到导通栅极，并且第二电压被施加到关断栅极，同时第一电压被施加到导通栅极。 在第二电压的施加持续预定时间段之后，停止向导通门施加第一电压。 通过这种操作，即使使用大电流，晶闸管也可以关闭。

公开(公告)号：US5985708A

公开(公告)日：1999-11-16

申请号：US816596

申请日：1997-03-13

申请人： Akio Nakagawa ,  Naoharu Sugiyama ,  Tomoko Matsudai ,  Norio Yasuhara ,  Atsusi Kurobe ,  Hideyuki Funaki ,  Yusuke Kawaguchi ,  Yoshihiro Yamaguchi

发明人： Akio Nakagawa ,  Naoharu Sugiyama ,  Tomoko Matsudai ,  Norio Yasuhara ,  Atsusi Kurobe ,  Hideyuki Funaki ,  Yusuke Kawaguchi ,  Yoshihiro Yamaguchi

IPC分类号： H01L27/12 ,  H01L29/73 ,  H01L29/739 ,  H01L29/786 ,  H01L21/8249

CPC分类号： H01L29/78696 ,  H01L27/1203 ,  H01L29/7317 ,  H01L29/7394 ,  H01L29/78612 ,  H01L29/78624 ,  H01L29/78639 ,  H01L29/78645 ,  H01L29/78687

摘要： A semiconductor apparatus comprising a vertical type semiconductor device having a first conducting type semiconductor substrate, a drain layer formed on the surface of the semiconductor substrate, a drain electrode formed on the surface of the drain layer, a second conducting type base layer selectively formed on the surface of the semiconductor substrate opposite to the drain layer, a first conducting type source layer selectively formed on the surface of the second conducting type base layer, a source electrode formed on the first conducting type source layer and the second conducting type base layer, and a gate electrode formed in contact with the first conducting type source layer, the second conducting type base layer and the semiconductor substrate through a gate insulating film and a lateral semiconductor device having an insulating layer formed in a region of the surface of the semiconductor substrate different from the second conducting type base layer, and a polycrystalline semiconductor layer formed on the insulating layer and having a first conducting type region and a second conducting type region, wherein the first conducting type source layer of the vertical semiconductor device and the first conducting type region of the polycrystalline semiconductor layer are simultaneously formed.

摘要翻译： 一种半导体装置，包括具有第一导电型半导体衬底的垂直型半导体器件，形成在半导体衬底的表面上的漏极层，形成在漏极层的表面上的漏电极，第二导电型基极层， 所述半导体衬底的与所述漏极层相对的表面，选择性地形成在所述第二导电型基极层的表面上的第一导电型源极层，形成在所述第一导电型源极层和所述第二导电型基极层上的源电极， 以及通过栅极绝缘膜与第一导电型源极层，第二导电型基极层和半导体基板接触形成的栅电极，以及在半导体基板的表面的区域中形成有绝缘层的侧面半导体装置 不同于第二导电型基底层，和多晶 半导体层形成在绝缘层上并具有第一导电类型区域和第二导电类型区域，其中垂直半导体器件的第一导电型源极层和多晶半导体层的第一导电类型区域同时形成。

公开(公告)号：US5640040A

公开(公告)日：1997-06-17

申请号：US481097

申请日：1995-06-07

申请人： Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai ,  Yoshihiro Yamaguchi ,  Ichiro Omura ,  Hideyuki Funaki

发明人： Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai ,  Yoshihiro Yamaguchi ,  Ichiro Omura ,  Hideyuki Funaki

IPC分类号： H01L21/336 ,  H01L21/74 ,  H01L21/762 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739 ,  H01L29/74 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861 ,  H01L23/58

CPC分类号： H01L29/404 ,  H01L21/74 ,  H01L21/76264 ,  H01L21/76297 ,  H01L27/0623 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66772 ,  H01L29/7394 ,  H01L29/7436 ,  H01L29/7455 ,  H01L29/749 ,  H01L29/7824 ,  H01L29/7835 ,  H01L29/78624 ,  H01L29/8611 ,  H01L21/76275 ,  H01L21/76286 ,  H01L29/78603 ,  H01L2924/0002

摘要： A high breakdown voltage semiconductor device comprising a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active layer formed on the insulating layer and made of a high resistance semiconductor of a first conductivity type, a first impurity region of the first conductivity type formed in the active layer, and a second impurity region of a second conductivity type formed in the active layer and spaced apart from the first impurity region by a predetermined distance. The first impurity region is formed of diffusion layers. The diffusion layers are superimposed one upon another and differ in diffusion depth or diffusion window width, or both.

摘要翻译： 一种高耐压电压半导体器件，包括半导体衬底，形成在半导体衬底上的绝缘层，形成在绝缘层上并由第一导电类型的高电阻半导体形成的有源层，第一导电类型的第一杂质区 形成在有源层中的第二杂质区和形成在有源层中并与第一杂质区隔开预定距离的第二导电类型的第二杂质区。 第一杂质区由扩散层形成。 扩散层彼此叠加并且扩散深度或扩散窗宽度不同，或两者均不同。

公开(公告)号：US5592014A

公开(公告)日：1997-01-07

申请号：US484864

申请日：1995-06-07

申请人： Hideyuki Funaki ,  Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai ,  Yoshihiro Yamaguchi ,  Ichiro Omura

发明人： Hideyuki Funaki ,  Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai ,  Yoshihiro Yamaguchi ,  Ichiro Omura

IPC分类号： H01L21/336 ,  H01L21/762 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/06 ,  H01L29/40 ,  H01L29/739 ,  H01L29/74 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861 ,  H01L23/58

CPC分类号： H01L29/404 ,  H01L21/76264 ,  H01L27/0623 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/402 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66772 ,  H01L29/7394 ,  H01L29/7436 ,  H01L29/7455 ,  H01L29/749 ,  H01L29/7824 ,  H01L29/7835 ,  H01L29/78624 ,  H01L29/8611 ,  H01L21/76275 ,  H01L21/76286 ,  H01L2924/0002

摘要： A high breakdown voltage semiconductor apparatus comprises a substrate having an insulating layer formed thereon, a high resistance semiconductor layer of a first conductivity type formed on said insulating layer, a base region of the first conductivity type formed selectively in a surface region of the high resistance semiconductor layer, a drift region of a second conductivity type formed selectively in the surface region of the high resistance semiconductor layer so as not to reach the insulating layer, a source region of the second conductivity type formed in the base region, a drain region formed in the drift region, a gate electrode formed on a region between the source region and the drift region, with a gate insulating film interposed between the gate electrode and the region between the source region and the drift region, a source electrode provided in contact with the base region and the source region, a drain electrode provided in contact with the drain region. The dosage of impurities in the high resistance semiconductor layer is 2.times.10.sup.12 cm.sup.-2 to 3.times.10.sup.12 cm.sup.-2 and the dosage of impurities in the drift layer is 1.times.10.sup.12 cm.sup.-2 to 2.times.10.sup.12 cm.sup.-2.

摘要翻译： 一种高耐压电压半导体装置，包括：在其上形成有绝缘层的基板，形成在所述绝缘层上的第一导电类型的高电阻半导体层，所述第一导电类型的基极区选择性地形成在所述高电阻的表面区域中 半导体层，选择性地形成在高电阻半导体层的表面区域中以便不到达绝缘层的第二导电类型的漂移区域，形成在基极区域中的第二导电类型的源极区域，形成的漏极区域 在漂移区域中，形成在源极区域和漂移区域之间的区域上的栅电极，栅极绝缘膜插入在栅极电极和源极区域与漂移区域之间的区域中，源极电极与 所述基极区域和所述源极区域，设置成与所述漏极区域接触的漏极电极。 高电阻半导体层中的杂质用量为2×10 12 cm -2至3×10 12 cm -2，漂移层中的杂质用量为1×10 12 cm -2至2×10 12 cm -2。

公开(公告)号：US5438220A

公开(公告)日：1995-08-01

申请号：US085056

申请日：1993-07-02

申请人： Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai ,  Yoshihiro Yamaguchi ,  Ichiro Omura ,  Hideyuki Funaki

发明人： Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai ,  Yoshihiro Yamaguchi ,  Ichiro Omura ,  Hideyuki Funaki

IPC分类号： H01L21/336 ,  H01L21/74 ,  H01L21/762 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/739 ,  H01L29/74 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

CPC分类号： H01L29/404 ,  H01L21/74 ,  H01L21/76264 ,  H01L21/76297 ,  H01L27/0623 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/0834 ,  H01L29/402 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66772 ,  H01L29/7394 ,  H01L29/7436 ,  H01L29/7455 ,  H01L29/749 ,  H01L29/7824 ,  H01L29/7835 ,  H01L29/78624 ,  H01L29/8611 ,  H01L21/76275 ,  H01L21/76286 ,  H01L29/78603 ,  H01L2924/0002

摘要： A high breakdown voltage semiconductor device includes a semiconductor substrate, an insulating layer formed on the semiconductor substrate, an active layer formed on the insulating layer and made of a high resistance semiconductor of a first conductivity type, a first impurity region of the first conductivity type formed in the active layer, and a second impurity region of a second conductivity type formed in the active layer and spaced apart from the first impurity region by a predetermined distance. The first impurity region is formed of diffusion layers. The diffusion layers are superimposed one upon another and differ in diffusion depth or diffusion window width, or both.

摘要翻译： 高耐压半导体器件包括半导体衬底，形成在半导体衬底上的绝缘层，形成在绝缘层上并由第一导电类型的高电阻半导体形成的有源层，第一导电类型的第一杂质区 形成在有源层中的第二杂质区和形成在有源层中并与第一杂质区隔开预定距离的第二导电类型的第二杂质区。 第一杂质区由扩散层形成。 扩散层彼此叠加并且扩散深度或扩散窗宽度不同，或两者均不同。

公开(公告)号：US5343067A

公开(公告)日：1994-08-30

申请号：US829214

申请日：1992-01-31

申请人： Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai

发明人： Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai

IPC分类号： H01L21/336 ,  H01L21/74 ,  H01L21/762 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/06 ,  H01L29/40 ,  H01L29/739 ,  H01L29/74 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861

CPC分类号： H01L29/404 ,  H01L21/74 ,  H01L21/76264 ,  H01L21/76297 ,  H01L27/0623 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/402 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66772 ,  H01L29/7394 ,  H01L29/7436 ,  H01L29/7455 ,  H01L29/749 ,  H01L29/7824 ,  H01L29/7835 ,  H01L29/78624 ,  H01L29/8611 ,  H01L21/76275 ,  H01L21/76286

摘要： A high breakdown voltage semiconductor device comprising a semiconductor substrate an insulating layer formed on the semiconductor substrate, a high resistance semiconductor layer formed on the insulating layer, an isolation region formed in the high resistance semiconductor layer, an element region formed in the high resistance semiconductor layer isolated by the isolation region in a lateral direction, a first low resistance region of a first conductivity type formed in a central surface portion of the element region, and a second low resistance region of a second conductivity type formed in a peripheral surface portion of the element region. Dose of impurities in the element region is set such that a portion of the element region between the first low resistance region and the second low resistance region is completely depleted when voltage is applied between the first and second low resistance regions.

摘要翻译： 一种高耐压半导体器件，包括半导体衬底，形成在半导体衬底上的绝缘层，形成在绝缘层上的高电阻半导体层，形成在高电阻半导体层中的隔离区，形成在高电阻半导体中的元件区 在横向方向上被隔离区域隔离的层，形成在元件区域的中心表面部分中的第一导电类型的第一低电阻区域和形成在元件区域的中心表面部分中的第二导电类型的第二低电阻区域， 元素区域。 元件区域中的杂质的剂量被设定为使得当在第一和第二低电阻区域之间施加电压时，第一低电阻区域和第二低电阻区域之间的元件区域的一部分被完全耗尽。

公开(公告)号：US5536961A

公开(公告)日：1996-07-16

申请号：US396794

申请日：1995-03-01

申请人： Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai

发明人： Akio Nakagawa ,  Norio Yasuhara ,  Tomoko Matsudai

IPC分类号： H01L21/336 ,  H01L21/74 ,  H01L21/762 ,  H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/06 ,  H01L29/40 ,  H01L29/739 ,  H01L29/74 ,  H01L29/745 ,  H01L29/749 ,  H01L29/78 ,  H01L29/786 ,  H01L29/861 ,  H01L29/76

CPC分类号： H01L29/404 ,  H01L21/74 ,  H01L21/76264 ,  H01L21/76297 ,  H01L27/0623 ,  H01L27/0922 ,  H01L27/1203 ,  H01L29/402 ,  H01L29/405 ,  H01L29/407 ,  H01L29/408 ,  H01L29/66772 ,  H01L29/7394 ,  H01L29/7436 ,  H01L29/7455 ,  H01L29/749 ,  H01L29/7824 ,  H01L29/7835 ,  H01L29/78624 ,  H01L29/8611 ,  H01L21/76275 ,  H01L21/76286

摘要： A high breakdown voltage semiconductor device comprising a semiconductor substrate an insulating layer formed on the semiconductor substrate, a high resistance semiconductor layer formed on the insulating layer, an isolation region formed in the high resistance semiconductor layer, an element region formed in the high resistance semiconductor layer isolated by the isolation region in a lateral direction, a first low resistance region of a first conductivity type formed in a central surface portion of the element region, and a second low resistance region of a second conductivity type formed in a peripheral surface portion of the element region. Dose of impurities in the element region is set such that a portion of the element region between the first low resistance region and the second low resistance region is completely depleted when voltage is applied between the first and second low resistance regions.

公开(公告)号：US07579669B2

公开(公告)日：2009-08-25

申请号：US11549297

申请日：2006-10-16

申请人： Kazutoshi Nakamura ,  Norio Yasuhara ,  Tomoko Matsudai ,  Kenichi Matsushita ,  Akio Nakagawa

发明人： Kazutoshi Nakamura ,  Norio Yasuhara ,  Tomoko Matsudai ,  Kenichi Matsushita ,  Akio Nakagawa

IPC分类号： H01L27/00

CPC分类号： H02M3/158 ,  H01L27/0922 ,  H01L29/41758 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/7813 ,  H01L29/7835 ,  H01L2924/0002 ,  H02M1/08 ,  H02M7/003 ,  H01L2924/00

摘要： A semiconductor device comprises a high side switching element, a driver circuit, and a low side switching element. The high side switching element is formed on a first semiconductor substrate, has a current path to one end of which an input voltage is supplied, and the other end of the current path is connected to an inductance. The driver circuit is formed on the first semiconductor substrate, on which the high side switching element is formed, and drives the high side switching element. The low side switching element is formed on a second semiconductor substrate separate from the first semiconductor substrate, and has a drain connected to the inductance and a source supplied with a reference potential.

摘要翻译： 半导体器件包括高侧开关元件，驱动电路和低侧开关元件。 高侧开关元件形成在第一半导体基板上，其一端具有输入电压的电流通路，电流路径的另一端与电感连接。 驱动电路形成在形成有高侧开关元件的第一半导体基板上，驱动高侧开关元件。 低侧开关元件形成在与第一半导体衬底分离的第二半导体衬底上，并且具有连接到电感的漏极和被提供参考电位的源极。