公开(公告)号：US6008066A

公开(公告)日：1999-12-28

申请号：US75825

申请日：1998-05-12

申请人： Yasumasa Kashima ,  Tsutomu Munakata

发明人： Yasumasa Kashima ,  Tsutomu Munakata

IPC分类号： H01L33/00 ,  H01L33/24 ,  H01L21/20

CPC分类号： H01L33/24 ,  H01L33/0062

摘要： A light-emitting diode 10 showing stable temperature characteristics achieved by reliably preventing stimulated emission regardless of temperature changes, comprising:a pair of clad layers 12, 14 and a pair of block layers 16, 17 formed on said substrate 11;an active layer 13 formed, between said clad layers 12, 14 and between said block layers 16, 17, surrounded jointly by said layers 12, 14, 16, 17,wherein in said continuous active layer 13, light-emitting portions 13a, 13b for emitting light when receiving injected carriers, and a light-absorbing portion 13c for absorbing the light coming from said light-emitting portions 13a, 13b are formed continuously.

摘要翻译： 具有通过可靠地防止受激发射而不管温度变化而实现的稳定的温度特性的发光二极管10，包括：形成在所述基板11上的一对包层12,14和一对块层16,17; 在所述包层12,14之间以及由所述层12,14,16,17共同包围的所述块层16,17之间形成的有源层13，其中在所述连续有源层13中，发光部分13a，13b 用于在接收注入的载体时发光，并且连续地形成用于吸收来自所述发光部13a，13b的光的光吸收部13c。

公开(公告)号：US06470038B2

公开(公告)日：2002-10-22

申请号：US09161227

申请日：1998-09-28

申请人： Tsutomu Munakata ,  Yasumasa Kashima

发明人： Tsutomu Munakata ,  Yasumasa Kashima

IPC分类号： H01S500

CPC分类号： H01S5/227 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2275 ,  H01S5/3072

摘要： A compound semiconductor light emitting device that confines carriers into an active layer and that has improved light emission efficiency. The device has a first conductive type substrate; an active layer on the first conductive type substrate; a second conductive type sub-layer and a first conductive type sub-layer, in this order from a lower portion to an upper portion of the device, on the first conductive type substrate and at both sides of the active layer; a second conductive type cladding layer on/over the active layer and the first conductive type sub-layer; and a second conductive type contact layer on the second conductive type cladding layer. A p-type diffusion barrier layer is further formed between the n-type sub-layer and the p-type cladding layer.

摘要翻译： 一种化合物半导体发光器件，其将载流子限制在有源层中并且具有改善的发光效率。 该器件具有第一导电型衬底; 在第一导电类型衬底上的有源层; 第二导电类型子层和第一导电类型子层，从第一导电类型衬底和有源层的两侧依次从器件的下部到器件的上部; 在有源层上和第二导电型子层之上的第二导电型包覆层; 和在第二导电型包覆层上的第二导电型接触层。 在n型子层和p型覆层之间进一步形成p型扩散阻挡层。

公开(公告)号：US5828085A

公开(公告)日：1998-10-27

申请号：US907126

申请日：1997-08-06

申请人： Yasumasa Kashima ,  Tsutomu Munakata

发明人： Yasumasa Kashima ,  Tsutomu Munakata

IPC分类号： H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L27/15

CPC分类号： H01L33/24 ,  H01L33/0062

摘要： An active layer of a light-emitting diode is surrounded jointly by a pair of clad layers and a pair of block layers. The active layer includes a light-emitting portion and a light-absorbing portion which are continuously formed in one body. The light-emitting portion emits light when carriers are injected thereinto between the pair of clad layers, and the light-absorbing portion absorbs light coming from the light-emitting portion. A bandgap of the light-absorbing portion may be smaller than that of the light-emitting portion.

摘要翻译： 发光二极管的有源层由一对包覆层和一对阻挡层共同包围。 有源层包括一体连续地形成的发光部和光吸收部。 当载体被注入到一对包层之间时，发光部分发光，并且光吸收部分吸收来自发光部分的光。 光吸收部分的带隙可以小于发光部分的带隙。

公开(公告)号：US06562649B2

公开(公告)日：2003-05-13

申请号：US10227412

申请日：2002-08-26

申请人： Tsutomu Munakata ,  Yasumasa Kashima

发明人： Tsutomu Munakata ,  Yasumasa Kashima

IPC分类号： H01L2100

CPC分类号： H01S5/227 ,  H01S5/2226 ,  H01S5/2227 ,  H01S5/2275 ,  H01S5/3072

摘要： A compound semiconductor light emitting device that can keep the effect of confining carriers into an active layer and that can improve light emission efficiency. In the device having a first conductive type substrate; and active layer on the first conductive type substrate; a second conductive type sub-layer and a first conductive type sub-layer, in this order from a lower portion to an upper portion of the device, on the first conductive type substrate and at both sides of the active layer; a second conductive type cladding layer on/over the active layer and the first conductive type sub-layer; and a second conductive type contact layer on the second conductive type cladding layer 19. A p-type diffusion barrier layer is further formed between the n-type sub-layer and the p-type cladding layer.

摘要翻译： 一种化合物半导体发光器件，其可以保持将载流子限制在有源层中并且可以提高发光效率的效果。 在具有第一导电类型衬底的器件中; 和有源层在第一导电类型衬底上; 第二导电类型子层和第一导电类型子层，从第一导电类型衬底和有源层的两侧依次从器件的下部到器件的上部; 在有源层上和第二导电型子层之上的第二导电型包覆层; 以及第二导电型覆层19上的第二导电型接触层。在n型子层和p型覆层之间还形成p型扩散阻挡层。

公开(公告)号：US06570189B1

公开(公告)日：2003-05-27

申请号：US09454609

申请日：1999-12-07

申请人： Yasumasa Kashima ,  Tsutomu Munakata

发明人： Yasumasa Kashima ,  Tsutomu Munakata

IPC分类号： H01L3300

CPC分类号： H01L33/145 ,  H01S5/227 ,  H01S5/2272 ,  H01S2301/173

摘要： A semiconductor device includes a substrate formed of a group III element and a group V element, a buffer layer having a thickness of at least 0.5 &mgr;m covering an the entire main surface of the substrate, and a selective-area growth layer grown selectively on the buffer layer. The buffer layer includes both the group III element and the group V element. The buffer layer is formed by metalorganic vapor-phase epitaxy.

摘要翻译： 半导体器件包括由III族元素和V族元素形成的基片，覆盖基片整个主表面的至少0.5μm厚度的缓冲层和选择性地生长在 缓冲层。 缓冲层包括III族元素和V族元素。 缓冲层由金属有机气相外延形成。

公开(公告)号：US6013539A

公开(公告)日：2000-01-11

申请号：US3694

申请日：1998-01-07

申请人： Yasumasa Kashima ,  Tsutomu Munakata

发明人： Yasumasa Kashima ,  Tsutomu Munakata

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01L21/20

CPC分类号： H01L33/0062 ,  C23C14/048 ,  H01L33/0045

摘要： An edge emitting LED comprises a semiconductor substrate having a main surface, an active layer formed over the main surface, and the active layer having a light emitting region, an optical absorption region having a bandgap energy smaller than that of the light emitting region, and a composition change region formed between the light emitting region and the optical absorption region, the composition change region having the bandgap energy continuously changes. Accordingly, an edge emitting LED is able to produce a stable, spontaneous emission of a light under a wide range of operating conditions. Furthermore, a method of forming an edge emitting LED, comprising the steps of: providing a semiconductor substrate having a previous formation region of an active layer having a light emitting region and an optical absorption region continued with the light emitting region; forming a mask pattern over the substrate located on both sides of the optical absorption region; and forming the active layer over the formed structure. Accordingly, a method of forming a edge emitting LED is able to form a light emitting region and an optical absorption region, with one-step growth.

摘要翻译： 边缘发射LED包括具有主表面的半导体衬底，在主表面上形成的有源层，并且有源层具有发光区域，具有小于发光区域的带隙能量的光能吸收区域，以及 形成在发光区域和光吸收区域之间的成分变化区域，具有带隙能量的成分变化区域连续变化。 因此，边缘发射LED能够在宽范围的操作条件下产生稳定的自发发光。 此外，形成边缘发光LED的方法包括以下步骤：提供具有与发光区域连续的具有发光区域和光吸收区域的有源层的先前形成区域的半导体衬底; 在位于光吸收区两侧的衬底上形成掩模图案; 并在所形成的结构上形成有源层。 因此，形成边缘发光LED的方法能够以一步生长形成发光区域和光吸收区域。

公开(公告)号：US5994158A

公开(公告)日：1999-11-30

申请号：US788374

申请日：1997-01-24

申请人： Yasumasa Kashima ,  Tsutomu Munakata

发明人： Yasumasa Kashima ,  Tsutomu Munakata

IPC分类号： C23C16/52 ,  C23C16/54 ,  C30B25/02 ,  H01L21/20 ,  H01L21/205 ,  H01L29/201

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262

摘要： A method of fabricating an abrupt hetero interface by organometallic vapor growth comprises supplying a first Group III source gas at a predetermined flow rate and a first Group V source gas at a predetermined flow rate to a growth chamber during a first growth process to form a first Group III-Group V compound layer. During a growth interruption process, the inflow of the first Group III source gas to the growth chamber is stopped, while the supply of the first Group V source gas to the growth chamber is continued, to thereby interrupt the growth of the first Group III-Group V compound layer. Finally, during a second growth process, the first Group V source gas flowing into the growth chamber is switched to a second Group V source gas, and a second Group III source gas is simultaneously supplied at a predetermined flow rate to the growth chamber, thereby forming a second Group III-Group V compound layer on the first Group III-Group V compound layer.

摘要翻译： 通过有机金属气相生长制造突变异质界面的方法包括：在第一生长过程期间以预定流速将预定流量的第一III族源气体和第一V族源气体以预定流速供应至生长室，以形成第一 III族-V族化合物层。 在生长中断过程中，停止向第一组III源气体的流入，同时向生长室供应第一V族源气体，从而中断第一组III- V组化合物层。 最后，在第二次生长过程中，流入生长室的第一组V源气体被切换成第二组V源气体，并且将第二组III源气体以预定的流量同时供给到生长室，由此 在第一组III-V族化合物层上形成第二组III-V族化合物层。

公开(公告)号：US5889294A

公开(公告)日：1999-03-30

申请号：US805716

申请日：1997-02-25

申请人： Yasumasa Kashima ,  Tsutomu Munakata

发明人： Yasumasa Kashima ,  Tsutomu Munakata

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01S5/00 ,  H01L27/15

CPC分类号： H01L33/0062 ,  C23C14/048 ,  H01L33/0045

摘要： An edge emitting LED comprises a semiconductor substrate having a main surface, an active layer formed over the main surface, and the active layer having a light emitting region, an optical absorption region having a bandgap energy smaller than that of the light emitting region, and a composition change region formed between the light emitting region and the optical absorption region, the composition change region having the bandgap energy continuously changes. Accordingly, an edge emitting LED is able to produce a stable, spontaneous emission of a light under a wide range of operating conditions. Furthermore, a method of forming an edge emitting LED, comprising the steps of: providing a semiconductor substrate having a previous formation region of an active layer having a light emitting region and an optical absorption region continued with the light emitting region; forming a mask pattern over the substrate located on both sides of the optical absorption region; and forming the active layer over the formed structure. Accordingly, a method of forming a edge emitting LED is able to form a light emitting region and an optical absorption region, with one-step growth.

摘要翻译： 边缘发射LED包括具有主表面的半导体衬底，在主表面上形成的有源层，并且有源层具有发光区域，具有小于发光区域的带隙能量的光能吸收区域，以及 形成在发光区域和光吸收区域之间的成分变化区域，具有带隙能量的成分变化区域连续变化。 因此，边缘发射LED能够在宽范围的操作条件下产生稳定的自发发光。 此外，形成边缘发光LED的方法包括以下步骤：提供具有与发光区域连续的具有发光区域和光吸收区域的有源层的先前形成区域的半导体衬底; 在位于光吸收区两侧的衬底上形成掩模图案; 并在所形成的结构上形成有源层。 因此，形成边缘发光LED的方法能够以一步生长形成发光区域和光吸收区域。

公开(公告)号：US6083813A

公开(公告)日：2000-07-04

申请号：US61044

申请日：1998-04-16

申请人： Yasumasa Kashima

发明人： Yasumasa Kashima

IPC分类号： H01L21/205 ,  C30B25/02 ,  C30B25/18 ,  H01S5/00 ,  H01S5/12 ,  H01L21/20 ,  H01L21/00

CPC分类号： C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01S5/12

摘要： The method for forming the compound semiconductor device includes the step of forming a buffer layer so as to cover the periodic corrugation on the InP substrate, wherein the buffer layer forms using a crystal growth temperature lower than the preferred crystal growth temperature. Accordingly, the method for forming the compound semiconductor device can avoid a shape change and a thickness change because of defect of the periodic corrugation. Further, the compound semiconductor device includes a buffer layer formed so as to cover the periodic corrugation on the InP substrate, wherein the buffer layer forms using a crystal growth temperature lower than the preferred crystal growth temperature. Accordingly, the compound semiconductor device can get superior characteristics of the compound semiconductor device.

摘要翻译： 形成化合物半导体器件的方法包括形成缓冲层以覆盖InP衬底上的周期性波纹的步骤，其中使用低于优选晶体生长温度的晶体生长温度形成缓冲层。 因此，形成化合物半导体器件的方法由于周期性波纹的缺陷而能够避免形状变化和厚度变化。 此外，化合物半导体器件包括形成为覆盖InP衬底上的周期性波纹的缓冲层，其中使用低于优选晶体生长温度的晶体生长温度形成缓冲层。 因此，化合物半导体器件可以获得化合物半导体器件的优异特性。

公开(公告)号：US5034955A

公开(公告)日：1991-07-23

申请号：US441039

申请日：1989-11-22

申请人： Yasumasa Kashima ,  Masao Kobayashi ,  Yoji Hosoi ,  Takashi Tsubota

发明人： Yasumasa Kashima ,  Masao Kobayashi ,  Yoji Hosoi ,  Takashi Tsubota

IPC分类号： H01L33/14 ,  H01L33/24 ,  H01L33/30 ,  H01S5/223 ,  H01S5/24

CPC分类号： H01L33/0045 ,  H01S5/2237 ,  H01S5/24

摘要： A superluminescent diode has an active layer confined in a channel cut into current blocking layers on a semiconductor substrate. This structure gives a small output beam diameter and high coupling efficiency, even when coupled into single-mode fiber. At the end of the channel distant from the output facet, the active layer makes slanting contact with a rough diffusing surface formed by the current blocking layers and substrate. This easily-manufactured diffusing surface reduces optical gain within the active layer, thereby preventing lasing without requiring an antireflection coating.