公开(公告)号：US20130048358A1

公开(公告)日：2013-02-28

申请号：US13530815

申请日：2012-06-22

申请人： Tsuyoshi KANKI ,  Shoichi Suda ,  Yoshihiro Nakata

发明人： Tsuyoshi KANKI ,  Shoichi Suda ,  Yoshihiro Nakata

IPC分类号： H05K1/00 ,  H05K3/00 ,  H05K1/02

CPC分类号： H01L23/5389 ,  H01L23/49816 ,  H01L24/19 ,  H01L2224/12105 ,  H01L2924/01029 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/181 ,  Y10T29/49126 ,  Y10T29/49155 ,  Y10T29/49156 ,  Y10T29/49165 ,  Y10T428/12993 ,  Y10T428/24355 ,  Y10T428/24463 ,  Y10T428/31515 ,  H01L2924/00

摘要： A wiring structure includes: an insulating film formed over a substrate; a plurality of wirings formed on the insulating film; and an inducing layer, which is formed on the insulating film in a region between the plurality of wirings, a constituent atoms of the wirings are diffused in the inducing layer.

摘要翻译： 布线结构包括：形成在基板上的绝缘膜; 形成在所述绝缘膜上的多个布线; 以及在所述多个布线之间的区域中形成在所述绝缘膜上的感应层，所述布线的构成原子在所述诱导层中扩散。

公开(公告)号：US20120273964A1

公开(公告)日：2012-11-01

申请号：US13427200

申请日：2012-03-22

申请人： Tsuyoshi KANKI ,  Shoichi Suda ,  Shinya Sasaki

发明人： Tsuyoshi KANKI ,  Shoichi Suda ,  Shinya Sasaki

IPC分类号： H01L23/522 ,  H01L21/98 ,  H01L21/768

CPC分类号： H01L23/5389 ,  H01L21/4846 ,  H01L23/49822 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2224/24137 ,  H01L2924/01029 ,  H01L2924/3511 ,  H01L2924/00

摘要： A manufacturing method of a semiconductor device includes: forming an insulating layer above a substrate; forming a recessed section in the insulating layer; forming, on the insulating layer, a mask pattern having a first opening which exposes the recessed section, and a second opening which is arranged outside the first opening and does not expose the recessed section; forming a first conductive member and a second conductive member by respectively depositing a conductive material in the first opening and the second opening; and polishing and removing the first conductive member and the second conductive member on the upper side of the insulating layer so as to leave the first conductive member in the recessed section.

摘要翻译： 半导体器件的制造方法包括：在衬底上形成绝缘层; 在所述绝缘层中形成凹部; 在所述绝缘层上形成具有露出所述凹部的第一开口的掩模图案，以及布置在所述第一开口的外侧并且不露出所述凹部的第二开口; 通过在所述第一开口和所述第二开口中分别沉积导电材料来形成第一导电构件和第二导电构件; 并且在绝缘层的上侧抛光和去除第一导电构件和第二导电构件，以便将第一导电构件留在凹部中。

公开(公告)号：US20090236232A1

公开(公告)日：2009-09-24

申请号：US12407386

申请日：2009-03-19

申请人： Tsuyoshi KANKI

发明人： Tsuyoshi KANKI

IPC分类号： C25D7/12 ,  C25D3/38

CPC分类号： C25D3/38 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76877

摘要： An electrolytic plating solution includes a polar solvent, copper sulfate dissolved in the polar solvent, an accelerator including a sulfur compound, and a reducing agent having a smaller molecular weight than the accelerator.

摘要翻译： 电解电镀溶液包括极性溶剂，溶解在极性溶剂中的硫酸铜，包含硫化合物的促进剂和具有比促进剂分子量小的还原剂。