Particle-dispersion type amorphous aluminum-alloy having high strength
    2.
    发明授权
    Particle-dispersion type amorphous aluminum-alloy having high strength 失效
    具有高强度的粒子分散型无定形铝合金

    公开(公告)号:US5318641A

    公开(公告)日:1994-06-07

    申请号:US710035

    申请日:1991-06-06

    IPC分类号: C22C45/08

    CPC分类号: C22C45/08

    摘要: Al.sub.100-a-b-c X.sub.a M.sub.b T.sub.c, in which X is Y (yttrium) and/or rare-earth element(s), M is Fe, Co, and/or Ni, and T is Mn, Mo, Cr, Zr and/or V, and, a=0.5-5 atomic %, b=5-15 atomic %, and c=0.2-3.0 atomic %, and, further, X and M fall on and within the hatched region range of the appended FIG. 1, has a complex, amorphous-crystalline structure with an amorphous matrix containing the Al, X, M and T, and minority crystalline phase consisting of aluminum-alloy particles containing super-saturated X, M and T as solutes. The alloy has a high strength due to the dispersed crystalline particles.

    摘要翻译: Al100-ab-cXaMbTc,其中X是Y(钇)和/或稀土元素,M是Fe,Co和/或Ni,T是Mn,Mo,Cr,Zr和/或V ,a = 0.5-5原子%,b = 5〜15原子%,c = 0.2〜3.0原子%,进一步地,X和M落在附图1的阴影区域范围内。 1,具有含有Al,X,M和T的无定形基质的复杂的非结晶结构,以及由含有超饱和X,M和T作为溶质的铝合金颗粒组成的少数结晶相。 该合金由于分散的结晶颗粒而具有高强度。

    Thin aluminum-based alloy foil and wire and a process for producing same
    3.
    发明授权
    Thin aluminum-based alloy foil and wire and a process for producing same 失效
    薄铝基合金箔和线及其制造方法

    公开(公告)号:US5306363A

    公开(公告)日:1994-04-26

    申请号:US574654

    申请日:1990-08-20

    CPC分类号: C22C45/08

    摘要: An aluminum-based alloy foil or thin aluminum-based alloy wire is produced from an amorphous material made by a quenching and solidifying process and having a composition represented by the general formula:Al.sub.a M.sub.b X.sub.cwherein M is one or more elements selected from a group consisting of V, Cr, Mn, Fe, Co, Ni, Cu, Zr, Ti, Mo, W, Ca, Li, Mg and Si; X is one or more elements selected from a group consisting of Y, Nb, Hf, Ta, La, Ce, Sm, Nd and Mm (misch metal); and a, b, and c are atomic percentages falling within the following range:50.ltoreq.a.ltoreq.950.5.ltoreq.b.ltoreq.35 and0.5.ltoreq.c.ltoreq.25Such foil or wire has a smooth surface and a very small and uniform foil thickness or wire diameter, contains at least 50% by volume of an amorphous phase, and has excellent strength and resistance to corrosion. The foil thickness and wire diameter are reduced in a rolling or drawing process at an elevated temperature over a short time period.

    摘要翻译: 铝基合金箔或薄铝基合金线由淬火和固化方法制成的无定形材料制成,具有由以下通式表示的组成:AlaMbXc,其中M是选自以下的一种或多种元素: V,Cr,Mn,Fe,Co,Ni,Cu,Zr,Ti,Mo,W,Ca,Li,Mg和Si; X是选自Y,Nb,Hf,Ta,La,Ce,Sm,Nd和Mm(混合稀土金属)中的一种或多种元素; 和a,b和c是原子百分比在以下范围内:50 <= a <= 95 0.5 <= b <= 35和0.5 <= c <= 25这种箔或线具有光滑的表面和非常小的 箔厚度均匀,线径均匀,含有至少50体积%的非晶相,具有优异的强度和耐腐蚀性。 箔片厚度和线径在轧制或拉伸过程中在较短的时间内在升高的温度下降低。

    Wear-resistant aluminum alloy and method for working thereof
    6.
    发明授权
    Wear-resistant aluminum alloy and method for working thereof 失效
    耐磨铝合金及其加工方法

    公开(公告)号:US5344507A

    公开(公告)日:1994-09-06

    申请号:US851932

    申请日:1992-03-16

    摘要: An aluminum-alloy, which is wear-resistant and does not wear greatly the opposed cast iron or steel, and which can be warm worked. The alloyings the following composition and structure. Composition: Al.sub.a Si.sub.b M.sub.c X.sub.d T.sub.e (where M is at least one element selected from the group consisting of Fe, Co and. Ni; X is at least one element selected from the group consisting of Y, Ce, La and Mm (misch metal); Y is at least one element selected from the group consisting of Mn, Cr, V, Ti, Mo, Zr, W, Ta and Hf; a=50-85 atomic %, b=10-49 atomic %, c=0.5-10 atomic %, d=0.5-10 atomic %, e=0-10 atomic %, and a+b+c+d+e=100 atomic %. Structure: super-saturated face-centered cubic crystals and fine Si precipitates.

    摘要翻译: 铝合金,耐磨,不会大大磨损相对的铸铁或钢,可以加热。 合金的组成和结构如下。 组成:AlaSibMcXdTe(其中M是选自Fe,Co和Ni中的至少一种元素; X是选自Y,Ce,La和Mm(混合稀土金属)中的至少一种元素; Y是 选自Mn,Cr,V,Ti,Mo,Zr,W,Ta和Hf中的至少一种元素; a = 50-85原子%,b = 10-49原子%,c = 0.5-10原子 %,d = 0.5-10原子%,e = 0-10原子%,a + b + c + d + e = 100原子%结构:超饱和的面心立方晶体和微细的Si析出物。

    Magnetic coupler
    9.
    发明授权
    Magnetic coupler 有权
    磁耦合器

    公开(公告)号:US07948349B2

    公开(公告)日:2011-05-24

    申请号:US12289384

    申请日:2008-10-27

    IPC分类号: H01F17/04

    摘要: A magnetic coupler having higher response is provided. The magnetic coupler includes a thin film coil wound in a first layer; a first MR element being disposed in a second layer, and detecting an induced magnetic field generated by a signal current flowing through the thin film coil; and yokes being disposed close to the first MR element, and including a soft magnetic material. The first MR element is disposed in a position corresponding to a linear region of the thin film coil in a stacking direction. The yokes are disposed at both of an inner turn side and an outer turn side of the thin film coil in a manner of interposing the first MR element in the second layer. Thus, reduction in intensity of the induced magnetic field is suppressed, and intensity distribution of the induced magnetic field becomes flatter.

    摘要翻译: 提供了具有较高响应的磁耦合器。 磁耦合器包括缠绕在第一层中的薄膜线圈; 第一MR元件设置在第二层中,并且检测由流过薄膜线圈的信号电流产生的感应磁场; 并且轭设置成靠近第一MR元件,并且包括软磁材料。 第一MR元件被布置在与层叠方向上的薄膜线圈的线性区域对应的位置。 磁轭以将第一MR元件插入第二层的方式设置在薄膜线圈的内侧转弯侧和外侧转动侧。 因此,抑制感应磁场强度的降低,感应磁场的强度分布变得更平坦。

    Semiconductor device having super junction MOS transistor and method for manufacturing the same
    10.
    发明授权
    Semiconductor device having super junction MOS transistor and method for manufacturing the same 有权
    具有超结MOS晶体管的半导体器件及其制造方法

    公开(公告)号:US07928470B2

    公开(公告)日:2011-04-19

    申请号:US11598646

    申请日:2006-11-14

    IPC分类号: H01L29/66

    摘要: A semiconductor device having a super junction MOS transistor includes: a semiconductor substrate; a first semiconductor layer on the substrate; a second semiconductor layer on the first semiconductor layer; a channel forming region on a first surface portion of the second semiconductor layer; a source region on a first surface portion of the channel forming region; a source contact region on a second surface portion of the channel forming region; a gate electrode on a third surface portion of the channel forming region; a source electrode on the source region and the source contact region; a drain electrode on a backside of the substrate; and an anode electrode on a second surface portion of the second semiconductor layer. The anode electrode provides a Schottky barrier diode.

    摘要翻译: 具有超结MOS晶体管的半导体器件包括:半导体衬底; 在所述基板上的第一半导体层; 在所述第一半导体层上的第二半导体层; 在第二半导体层的第一表面部分上的沟道形成区; 在所述沟道形成区域的第一表面部分上的源极区域; 在所述沟道形成区域的第二表面部分上的源极接触区域; 在沟道形成区域的第三表面部分上的栅电极; 源极区域和源极接触区域上的源极电极; 位于衬底背面的漏电极; 以及在所述第二半导体层的第二表面部分上的阳极电极。 阳极电极提供肖特基势垒二极管。