公开(公告)号：USD820517S1

公开(公告)日：2018-06-12

申请号：US35502913

申请日：2017-04-12

申请人： Tsuyoshi Tanaka

设计人： Tsuyoshi Tanaka

公开(公告)号：US09103781B2

公开(公告)日：2015-08-11

申请号：US14343528

申请日：2011-09-12

申请人： Kouji Kusumoto ,  Yutaka Unuma ,  Hideki Kinoshita ,  Shinichi Goto ,  Tsuyoshi Tanaka ,  Yuji Maruo

发明人： Kouji Kusumoto ,  Yutaka Unuma ,  Hideki Kinoshita ,  Shinichi Goto ,  Tsuyoshi Tanaka ,  Yuji Maruo

IPC分类号： G01N27/447

CPC分类号： G01N27/44773 ,  G01N27/44739

摘要： A sample separation and adsorption appliance (100) includes a negative electrode (2), a positive electrode (3), a sample separation unit (6) that has a first opening (17) opened to a side facing the negative electrode (2) and a second opening (18) opened to a side facing the positive electrode (3), the sample separation unit containing a separation gel (7), and a slit structure (8) including a slit (1) at a position facing the second opening (18). A transfer film (9) is arranged between the second opening (18) and the slit (1).

摘要翻译： 样品分离吸附装置（100）包括负极（2），正极（3），样品分离单元（6），其具有朝向负极（2）的一侧开口的第一开口（17） 以及向与所述正极（3）相对的一侧开放的第二开口（18），所述样品分离单元包含分离凝胶（7），以及狭缝结构（8），所述狭缝结构（8）在面向所述第二 开（18）。 转印膜（9）布置在第二开口（18）和狭缝（1）之间。

公开(公告)号：US08796461B2

公开(公告)日：2014-08-05

申请号：US13634943

申请日：2011-03-16

申请人： Tsuyoshi Tanaka ,  Mayumi Abe ,  Nobumichi Arai ,  Naoki Uchida ,  Takashi Iida

发明人： Tsuyoshi Tanaka ,  Mayumi Abe ,  Nobumichi Arai ,  Naoki Uchida ,  Takashi Iida

IPC分类号： C07D213/04 ,  C07D213/06

CPC分类号： C07D213/06 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1029 ,  H01L51/0067 ,  H01L51/5048 ,  H05B33/10

摘要： A 1,2,4,5-substituted phenyl compound represented by the formula (1): wherein one of X1-X5 is nitrogen and the remainders of X1-X5 are carbon; R1 and R2 represent hydrogen, C1-6 alkyl or C1-6 alkoxy; R3 and R4 represent C1-6 alkyl or C1-6 alkoxy; and m is an integer of 0-4, and n is an integer of 0-5. This compound is useful as a constituent for an organic electroluminescent device.

摘要翻译： 由式（1）表示的1,2,4,5-取代苯基化合物：其中X 1 -X 5中的一个为氮，X 1 -X 5的残基为碳; R1和R2表示氢，C1-6烷基或C1-6烷氧基; R3和R4代表C1-6烷基或C1-6烷氧基; m为0-4的整数，n为0〜5的整数。 该化合物可用作有机电致发光器件的组分。

公开(公告)号：US08665477B2

公开(公告)日：2014-03-04

申请号：US13311930

申请日：2011-12-06

申请人： Tsuyoshi Tanaka

发明人： Tsuyoshi Tanaka

IPC分类号： G06F15/00

CPC分类号： G06K15/181 ,  G06F3/1205 ,  G06F3/1228 ,  G06F3/1232 ,  G06F3/1292 ,  G06K15/1801 ,  G06K15/4005

摘要： In a print system, print data and print setting information are transmitted from a terminal to a printing apparatus via an email, and the printing apparatus performs a printing process of the print data based on the print setting information. The printing apparatus includes: a first receiving unit that receives a print request email from the terminal; a transmission unit that transmits, to the terminal, a reply email that includes allowable print setting information representing information on designable print settings; and a second receiving unit that receives a second reply email having been transmitted from the terminal and including print setting information designated from among the allowable print setting information.

摘要翻译： 在打印系统中，通过电子邮件将打印数据和打印设置信息从终端传送到打印设备，并且打印设备基于打印设置信息执行打印数据的打印处理。 打印装置包括：第一接收单元，从终端接收打印请求电子邮件; 发送单元，向终端发送包含表示关于可设计的打印设置的信息的允许打印设置信息的回复电子邮件; 以及第二接收单元，其接收从终端发送的第二应答电子邮件，并且包括从可允许打印设置信息中指定的打印设置信息。

公开(公告)号：US08304812B2

公开(公告)日：2012-11-06

申请号：US13051455

申请日：2011-03-18

申请人： Toshikazu Onishi ,  Tatsuya Tanigawa ,  Shinichi Takigawa ,  Tsuyoshi Tanaka

发明人： Toshikazu Onishi ,  Tatsuya Tanigawa ,  Shinichi Takigawa ,  Tsuyoshi Tanaka

IPC分类号： H01L29/778

CPC分类号： H01L29/7787 ,  H01L29/0692 ,  H01L29/41725 ,  H01L29/42316

摘要： A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

摘要翻译： 太赫兹波辐射元件包括：形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极，栅极和漏电极。 源电极由周期性地排列的多个源电极指形成，漏电极由周期性排列的多个漏电极指形成。

公开(公告)号：US20120153355A1

公开(公告)日：2012-06-21

申请号：US13402631

申请日：2012-02-22

申请人： Hidekazu UMEDA ,  Yoshiharu Anda ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Hidekazu UMEDA ,  Yoshiharu Anda ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/78

CPC分类号： H01L29/2003 ,  H01L29/1066 ,  H01L29/4175 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/861

摘要： A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.

摘要翻译： 氮化物半导体器件包括半导体衬底和形成在半导体衬底上的氮化物半导体层。 半导体衬底包括正常区域和围绕法线区域的界面电流阻挡区域。 氮化物半导体层包括元件区域和围绕元件区域的隔离区域。 元件区域形成在正常区域上。 界面电流阻挡区域含有杂质，并且在氮化物半导体层和半导体衬底之间的界面处产生的载流子形成势垒。

公开(公告)号：US20120126290A1

公开(公告)日：2012-05-24

申请号：US13360275

申请日：2012-01-27

申请人： Yasuhiro UEMOTO ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Yasuhiro UEMOTO ,  Masahiro Hikita ,  Tetsuzo Ueda ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7783

摘要： A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

摘要翻译： 氮化物半导体器件包括：第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。 位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域，以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域 形成有具有比控制区域更高的电阻的高电阻区域。

公开(公告)号：US08003975B2

公开(公告)日：2011-08-23

申请号：US11600101

申请日：2006-11-16

申请人： Tetsuzo Ueda ,  Tsuyoshi Tanaka

发明人： Tetsuzo Ueda ,  Tsuyoshi Tanaka

IPC分类号： H01L31/00

CPC分类号： H01L21/76898 ,  H01L21/6835 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7787 ,  H01L2221/6835 ,  H01L2223/6627 ,  H01L2924/0002 ,  H01L2924/14 ,  H01L2924/19032 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/30105 ,  H01L2924/00

摘要： A semiconductor integrated circuit device includes: a semiconductor layer having a principal surface on which a source electrode, a drain electrode and a gate electrode are formed and having a first through hole; an insulating film formed in contact with the semiconductor layer and having a second through hole; a first interconnection formed on the semiconductor layer through the first through hole and connected to one of the source electrode, the drain electrode and the gate electrode which is exposed in the first through hole; and a second interconnection formed on the insulating film through the second through hole and connected to another of the source electrode, the drain electrode and the gate electrode which is exposed in the second through hole. The first interconnection and the second interconnection face each other and form a microstrip line.

摘要翻译： 半导体集成电路器件包括：半导体层，其主表面上形成有源电极，漏电极和栅电极，并具有第一通孔; 形成为与所述半导体层接触并具有第二通孔的绝缘膜; 通过所述第一通孔形成在所述半导体层上并与所述第一通孔露出的所述源电极，所述漏电极和所述栅电极之一连接的第一互连; 以及通过第二通孔形成在绝缘膜上的第二互连，并与第二通孔中露出的源电极，漏电极和栅电极中的另一个连接。 第一互连和第二互连彼此面对并形成微带线。

公开(公告)号：US07910464B2

公开(公告)日：2011-03-22

申请号：US12695759

申请日：2010-01-28

申请人： Tomohiro Murata ,  Yutaka Hirose ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto

发明人： Tomohiro Murata ,  Yutaka Hirose ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto

IPC分类号： H01L21/20 ,  H01L21/36

CPC分类号： H01L29/66871 ,  H01L21/28 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/8128

摘要： A semiconductor device of the present invention includes: a III-V nitride semiconductor layer including a channel region in which carriers travel; a concave portion provided in an upper portion of the channel region in the III-V nitride semiconductor layer; and a Schottky electrode consisting of a conductive material forming a Schottky junction with the semiconductor layer, and formed on a semiconductor layer, which spreads over the concave portion and peripheral portions of the concave portion, on the III-V nitride semiconductor layer. A dimension of the concave portion in a depth direction is set so that a portion of the Schottky electrode provided in the concave portion can adjust a quantity of the carriers traveling in the channel region.

摘要翻译： 本发明的半导体器件包括：III-V族氮化物半导体层，其包括载流子行进的沟道区; 设置在III-V族氮化物半导体层中的沟道区的上部的凹部; 和由形成与半导体层形成肖特基结的导电材料构成的肖特基电极，形成在III-V族氮化物半导体层上的在凹部的凹部和周边部分上方扩散的半导体层上。 深度方向上的凹部的尺寸被设定为使得设置在凹部中的肖特基电极的一部分可以调节在沟道区域中行进的载流子的量。

公开(公告)号：US20110058560A1

公开(公告)日：2011-03-10

申请号：US12852242

申请日：2010-08-06

申请人： Hideki OKITA ,  Masahiro Yoshizawa ,  Tsuyoshi Tanaka ,  Toshiaki Tarui

发明人： Hideki OKITA ,  Masahiro Yoshizawa ,  Tsuyoshi Tanaka ,  Toshiaki Tarui

IPC分类号： H04L12/28

CPC分类号： H04L12/4641 ,  H04L12/4637 ,  H04L12/4645 ,  H04L12/467 ,  H04L41/0806 ,  H04L49/354

摘要： A virtual network management server includes ring node information that manages configuration nodes for each of the rings, and ring connection I/F for each of the ring configuration nodes, generates the VLAN configuration information so as to transfer a frame that is transmitted or received by a designated gateway connection port and a designated base station connection port by the designated VLAN, and also so as to transmit or receive a tagged frame of the designated VLAN by the ring connection I/F of all of the ring to which the gateway connection switch belongs and the ring to which the base station connection switch belongs, and updates the VLAN configuration of the switch.

摘要翻译： 虚拟网络管理服务器包括管理每个环的配置节点的环节节点信息，以及每个环配置节点的环路连接I / F，生成VLAN配置信息，以便传输由VLAN发送或接收的帧 通过指定的VLAN指定网关连接端口和指定的基站连接端口，并且还通过网关连接交换机的所有环的环形连接I / F来发送或接收指定VLAN的标记帧 属于基站连接交换机所属的环，更新交换机的VLAN配置。