SAMPLE SEPARATION AND ADSORPTION APPLIANCE
    1.
    发明申请
    SAMPLE SEPARATION AND ADSORPTION APPLIANCE 有权
    样品分离和吸附装置

    公开(公告)号:US20140224657A1

    公开(公告)日:2014-08-14

    申请号:US14343528

    申请日:2011-09-12

    IPC分类号: G01N27/447

    CPC分类号: G01N27/44773 G01N27/44739

    摘要: A sample separation and adsorption appliance (100) includes a negative electrode (2), a positive electrode (3), a sample separation unit (6) that has a first opening (17) opened to a side facing the negative electrode (2) and a second opening (18) opened to a side facing the positive electrode (3), the sample separation unit containing a separation gel (7), and a slit structure (8) including a slit (1) at a position facing the second opening (18). A transfer film (9) is arranged between the second opening (18) and the slit (1).

    摘要翻译: 样品分离吸附装置(100)包括负极(2),正极(3),样品分离单元(6),其具有朝向负极(2)的一侧开口的第一开口(17) 以及向与所述正极(3)相对的一侧开放的第二开口(18),所述样品分离单元包含分离凝胶(7),以及狭缝结构(8),所述狭缝结构(8)在面向所述第二 开(18)。 转印膜(9)布置在第二开口(18)和狭缝(1)之间。

    Sample separation and adsorption appliance
    2.
    发明授权
    Sample separation and adsorption appliance 有权
    样品分离和吸附装置

    公开(公告)号:US09103781B2

    公开(公告)日:2015-08-11

    申请号:US14343528

    申请日:2011-09-12

    IPC分类号: G01N27/447

    CPC分类号: G01N27/44773 G01N27/44739

    摘要: A sample separation and adsorption appliance (100) includes a negative electrode (2), a positive electrode (3), a sample separation unit (6) that has a first opening (17) opened to a side facing the negative electrode (2) and a second opening (18) opened to a side facing the positive electrode (3), the sample separation unit containing a separation gel (7), and a slit structure (8) including a slit (1) at a position facing the second opening (18). A transfer film (9) is arranged between the second opening (18) and the slit (1).

    摘要翻译: 样品分离吸附装置(100)包括负极(2),正极(3),样品分离单元(6),其具有朝向负极(2)的一侧开口的第一开口(17) 以及向与所述正极(3)相对的一侧开放的第二开口(18),所述样品分离单元包含分离凝胶(7),以及狭缝结构(8),所述狭缝结构(8)在面向所述第二 开(18)。 转印膜(9)布置在第二开口(18)和狭缝(1)之间。

    Print system, printing apparatus, and computer program product
    7.
    发明授权
    Print system, printing apparatus, and computer program product 有权
    打印系统,打印设备和计算机程序产品

    公开(公告)号:US08665477B2

    公开(公告)日:2014-03-04

    申请号:US13311930

    申请日:2011-12-06

    申请人: Tsuyoshi Tanaka

    发明人: Tsuyoshi Tanaka

    IPC分类号: G06F15/00

    摘要: In a print system, print data and print setting information are transmitted from a terminal to a printing apparatus via an email, and the printing apparatus performs a printing process of the print data based on the print setting information. The printing apparatus includes: a first receiving unit that receives a print request email from the terminal; a transmission unit that transmits, to the terminal, a reply email that includes allowable print setting information representing information on designable print settings; and a second receiving unit that receives a second reply email having been transmitted from the terminal and including print setting information designated from among the allowable print setting information.

    摘要翻译: 在打印系统中,通过电子邮件将打印数据和打印设置信息从终端传送到打印设备,并且打印设备基于打印设置信息执行打印数据的打印处理。 打印装置包括:第一接收单元,从终端接收打印请求电子邮件; 发送单元,向终端发送包含表示关于可设计的打印设置的信息的允许打印设置信息的回复电子邮件; 以及第二接收单元,其接收从终端发送的第二应答电子邮件,并且包括从可允许打印设置信息中指定的打印设置信息。

    Terahertz wave radiating element
    8.
    发明授权
    Terahertz wave radiating element 失效
    太赫兹波辐射元件

    公开(公告)号:US08304812B2

    公开(公告)日:2012-11-06

    申请号:US13051455

    申请日:2011-03-18

    IPC分类号: H01L29/778

    摘要: A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.

    摘要翻译: 太赫兹波辐射元件包括:形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极,栅极和漏电极。 源电极由周期性地排列的多个源电极指形成,漏电极由周期性排列的多个漏电极指形成。

    NITRIDE SEMICONDUCTOR DEVICE
    9.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 有权
    氮化物半导体器件

    公开(公告)号:US20120153355A1

    公开(公告)日:2012-06-21

    申请号:US13402631

    申请日:2012-02-22

    IPC分类号: H01L29/78

    摘要: A nitride semiconductor device includes a semiconductor substrate, and a nitride semiconductor layer formed on the semiconductor substrate. The semiconductor substrate includes a normal region and an interface current block region surrounding the normal region. The nitride semiconductor layer includes an element region and an isolation region surrounding the element region. The element region is formed over the normal region. The interface current block region contains impurities, and forms a potential barrier against carriers generated at an interface between the nitride semiconductor layer and the semiconductor substrate.

    摘要翻译: 氮化物半导体器件包括半导体衬底和形成在半导体衬底上的氮化物半导体层。 半导体衬底包括正常区域和围绕法线区域的界面电流阻挡区域。 氮化物半导体层包括元件区域和围绕元件区域的隔离区域。 元件区域形成在正常区域上。 界面电流阻挡区域含有杂质,并且在氮化物半导体层和半导体衬底之间的界面处产生的载流子形成势垒。

    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    10.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
    氮化物半导体器件及其制造方法

    公开(公告)号:US20120126290A1

    公开(公告)日:2012-05-24

    申请号:US13360275

    申请日:2012-01-27

    IPC分类号: H01L29/778

    摘要: A nitride semiconductor device includes: a first nitride semiconductor layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a wider band gap than the first nitride semiconductor layer; and a third nitride semiconductor layer formed on the second nitride semiconductor layer. A region of the third nitride semiconductor layer located below the gate electrode is formed with a control region having a p-type conductivity, and a region of the third nitride semiconductor layer located between the gate electrode and each of the source electrode and the drain electrode is formed with a high resistive region having a higher resistance than the that of the control region.

    摘要翻译: 氮化物半导体器件包括:第一氮化物半导体层; 形成在所述第一氮化物半导体层上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在所述第二氮化物半导体层上的第三氮化物半导体层。 位于栅电极下方的第三氮化物半导体层的区域形成有具有p型导电性的控制区域,以及位于栅电极与源电极和漏极之间的第三氮化物半导体层的区域 形成有具有比控制区域更高的电阻的高电阻区域。