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公开(公告)号：US20110204418A1
公开(公告)日：2011-08-25
申请号：US13051455
申请日：2011-03-18
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/0692 , H01L29/41725 , H01L29/42316
摘要： A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.
摘要翻译： 太赫兹波辐射元件包括：形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极，栅极和漏电极。 源电极由周期性地排列的多个源电极指形成，漏电极由周期性排列的多个漏电极指形成。
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公开(公告)号：US08304812B2
公开(公告)日：2012-11-06
申请号：US13051455
申请日：2011-03-18
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/0692 , H01L29/41725 , H01L29/42316
摘要： A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.
摘要翻译： 太赫兹波辐射元件包括：形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极，栅极和漏电极。 源电极由周期性地排列的多个源电极指形成，漏电极由周期性排列的多个漏电极指形成。
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公开(公告)号：US20070023763A1
公开(公告)日：2007-02-01
申请号：US11492130
申请日：2006-07-25
申请人： Shinichi Takigawa , Daisuke Ueda , Susumu Koike
发明人： Shinichi Takigawa , Daisuke Ueda , Susumu Koike
IPC分类号： H01L33/00
摘要： A semiconductor light-emitting device includes a light-emitting layer and a light extraction layer formed on the light-emitting layer and made of a resin material containing particles. The maximum size of each of the particles contained in the light extraction layer is smaller than the wavelength of emitted light penetrating through the light extraction layer.
摘要翻译： 半导体发光器件包括发光层和形成在发光层上并由含有颗粒的树脂材料制成的光提取层。 包含在光提取层中的每个颗粒的最大尺寸小于穿过光提取层的发射光的波长。
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4.发明申请Solid-state imaging element, solid-state imaging device, and method for fabricating the same 有权固态成像元件，固态成像器件及其制造方法公开(公告)号：US20060125948A1
公开(公告)日：2006-06-15
申请号：US11011042
申请日：2004-12-15
申请人： Kenji Orita , Shinichi Takigawa
发明人： Kenji Orita , Shinichi Takigawa
IPC分类号： H04N5/225
CPC分类号： H04N5/335 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327 , H04N9/045
摘要： Each of solid-state imaging elements 11a, 11b and 11c includes a photoelectric conversion element and a photonic crystal which is formed on the photoelectric conversion element. The photonic crystal has a refractive index periodic structure including: a periodic structure in the stacking direction which is created by stacking low refractive layers 1 and high refractive layers 2 alternately, and a periodic structure in the in-plane direction which is created by concentric similar shapes (circles or polygons). Both RGB color separation and light condensing can be achieved all at once using this photonic crystal only. There are two methods for fabricating the photonic crystal: lithography and etching for fabricating a tubular photonic crystal having a central cavity and similar-shaped cavities around the central cavity which form a concentric pattern in the in-plane direction; and autocloning for fabricating, on a base having the concentric pattern, a photonic crystal having a refractive index periodic structure in both the in-plane direction and the stacking direction.
摘要翻译： 固态成像元件11a，11b和11c中的每一个包括形成在光电转换元件上的光电转换元件和光子晶体。 光子晶体具有折射率周期性结构，其包括：通过交替堆叠低折射层1和高折射层2而产生的堆叠方向上的周期性结构，以及由同心相似产生的在面内方向上的周期性结构 形状（圆或多边形）。 只能使用这种光子晶体，可以同时实现RGB色彩分离和聚光。 制造光子晶体有两种方法：用于制造管状光子晶体的光刻和蚀刻，所述管状光子晶体具有围绕中心腔的中心腔和类似形状的空腔，其在面内方向上形成同心图案; 并且在具有同心图案的基底上制造在面内方向和层叠方向上具有折射率周期性结构的光子晶体的高压灭菌器。
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5.发明授权Solid-state imaging element, solid-state imaging device, and method for fabricating the same 有权固态成像元件，固态成像器件及其制造方法公开(公告)号：US07420610B2
公开(公告)日：2008-09-02
申请号：US11011042
申请日：2004-12-15
申请人： Kenji Orita , Shinichi Takigawa
发明人： Kenji Orita , Shinichi Takigawa
CPC分类号： H04N5/335 , H01L27/14621 , H01L27/14623 , H01L27/14625 , H01L27/14632 , H01L27/14685 , H01L27/14687 , H01L31/02327 , H04N9/045
摘要： A solid state-imaging element including photoelectric conversion element and an optical element such as a photonic crystal is disclosed. The optical element is formed on the photoelectric conversion element, and has a refractive index periodic structure made up of stacked layers of materials with different refractive indices. The refractive index periodic structure is defined by multiple layers along a stacking direction and by a group of concentric similar shapes along an in-plane direction. The optical element may be fabricated via lithography and etching, or an autocloning technique. A solid state-imaging device including an arrangement of several solid-state imaging elements is also disclosed.
摘要翻译： 公开了包括光电转换元件和诸如光子晶体的光学元件的固态成像元件。 光学元件形成在光电转换元件上，并且具有折射率周期性结构，其由折射率不同的材料的堆叠层构成。 折射率周期结构由层叠方向上的多个层和沿着面内方向的一组同心相似的形状限定。 光学元件可以通过光刻和蚀刻或高压灭菌技术制造。 还公开了包括若干固态成像元件的布置的固态成像器件。
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公开(公告)号：US07170108B2
公开(公告)日：2007-01-30
申请号：US10817800
申请日：2004-04-06
申请人： Daisuke Ueda , Shinichi Takigawa
发明人： Daisuke Ueda , Shinichi Takigawa
IPC分类号： H01L29/732 , H01L31/072
CPC分类号： B82Y20/00 , H01L33/145 , H01L33/32 , H01S5/2214 , H01S5/2215 , H01S5/34333
摘要： An n-type buffer layer composed of n-type GaN, an n-type cladding layer composed of n-type AlGaN, an n-type optical confinement layer composed of n-type GaN, a single quantum well active layer composed of undoped GaInN, a p-type optical confinement layer composed of p-type GaN, a p-type cladding layer composed of p-type AlGaN, and a p-type contact layer composed of p-type GaN are formed on a substrate composed of sapphire. A current blocking layer formed in an upper portion of the p-type cladding layer and on both sides of the p-type contact layer to define a ridge portion is composed of a dielectric material obtained by replacing some of nitrogen atoms composing a Group III–V nitride semiconductor with oxygen atoms.
摘要翻译： 由n型GaN构成的n型缓冲层，由n型AlGaN构成的n型覆盖层，由n型GaN构成的n型光限制层，由未掺杂的GaInN构成的单量子阱活性层 在由蓝宝石构成的基板上形成由p型GaN构成的p型光限制层，由p型AlGaN构成的p型覆盖层和由p型GaN构成的p型接触层。 形成在p型覆层的上部并且在p型接触层的两侧形成脊部的电流阻挡层由通过将构成III- 具有氧原子的氮化物半导体。
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公开(公告)号：US20060028110A1
公开(公告)日：2006-02-09
申请号：US11195812
申请日：2005-08-03
申请人： Shinichi Takigawa , Daisuke Ueda
发明人： Shinichi Takigawa , Daisuke Ueda
IPC分类号： H01J9/02
CPC分类号： H01J21/04 , H01J9/244 , H01L31/03048 , H01L31/09 , Y02E10/544 , Y02P70/521
摘要： The present invention provides an electromagnetic wave generation apparatus that is compact and generates a high power terahertz wave. An electromagnetic wave generation apparatus includes: a substrate; a first electrode, having a photoelectron emitting part, formed on one of the surfaces of the substrate; a second electrode formed on the surface of the substrate; a power supply source that applies voltage to between the first electrode and the second electrode so that the potential of the second electrode becomes higher than the potential of the first electrode; and a light source that radiates one of time modulated light and wavelength modulated light, and in the apparatus, the photoelectron emitting part (a) emits electrons when light is irradiated and (b) is placed at a position which an incident light from the light source enters and from which the emitted electrons run to the electron incidence plane of the second electrode.
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公开(公告)号：US5031186A
公开(公告)日：1991-07-09
申请号：US494075
申请日：1990-03-15
IPC分类号： H01S5/028
CPC分类号： H01S5/028
摘要： A semiconductive laser device having a resonator which is formed with a dielectric film on at least one end face thereof is described. The dielectric film is in a thickness of at least three times a wavelength in the dielectric film by which the oscillation wavelength becomes very stable.
摘要翻译： 描述了具有在其至少一个端面上形成有电介质膜的谐振器的半导体激光器件。 电介质膜的厚度至少为电介质膜中波长变得非常稳定的3倍以上。
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公开(公告)号：US09152055B2
公开(公告)日：2015-10-06
申请号：US13335260
申请日：2011-12-22
CPC分类号： G03F7/2051 , G02B19/0057 , G02B27/0905 , G02B27/0994 , H01L21/268 , H01L27/15
摘要： An optical irradiation apparatus includes: a light-emitting device configured to emit a plurality of light beams whose optical axes extend in a substantially identical direction; a collimator part configured to convert the light beams into parallel light beams; and a light condensing part configured to collect the parallel light beams. The light-emitting device includes a super luminescent diode array in which a plurality of waveguides are provided on a substrate. Each of the waveguides has a light-emitting facet including a light emission point from which an associated one of the light beams is emitted. The light emission points are located in a plane. The plane including the light emission points is orthogonal to a direction of an optical axis of the collimator part.
摘要翻译： 光照射装置包括：发光装置，其配置为发射光轴沿基本相同的方向延伸的多个光束; 被配置为将光束转换为平行光束的准直器部分; 以及被配置为收集平行光束的聚光部。 发光装置包括其中多个波导设置在基板上的超发光二极管阵列。 每个波导具有包括从其发射相关联的一个光束的发光点的发光小面。 发光点位于平面内。 包括发光点的平面与准直器部分的光轴的方向正交。
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公开(公告)号：US07427522B2
公开(公告)日：2008-09-23
申请号：US10991560
申请日：2004-11-18
IPC分类号： H01L21/00
CPC分类号： H01S5/02216 , G02F1/37 , H01S5/0092 , H01S5/0222 , H01S5/02248
摘要： In a short-wavelength laser module, long-term reliability is lost because of unnecessary gas deposited on the end face of its optical waveguide. A short-wavelength laser module has a package structure wherein a package lid used when the short-wavelength laser module is hermetically sealed does not make contact with internal gas, and a process of accelerating the polymerization of a securing agent used inside the package is incorporated, whereby unnecessary gas from the securing agent is eliminated and the long-term reliability of the output is attained.
摘要翻译： 在短波长激光器模块中，由于不必要的气体沉积在其光波导的端面上，所以长期可靠性丧失。 短波长激光器模块具有封装结构，其中当短波长激光器模块被气密密封时使用的封装盖不与内部气体接触，并且加入用于封装内部使用的固定剂聚合的过程 从而消除了来自固定剂的不必要的气体，并且实现了输出的长期可靠性。
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