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公开(公告)号：US20110204418A1
公开(公告)日：2011-08-25
申请号：US13051455
申请日：2011-03-18
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/0692 , H01L29/41725 , H01L29/42316
摘要： A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.
摘要翻译： 太赫兹波辐射元件包括：形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极，栅极和漏电极。 源电极由周期性地排列的多个源电极指形成，漏电极由周期性排列的多个漏电极指形成。
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公开(公告)号：US08304812B2
公开(公告)日：2012-11-06
申请号：US13051455
申请日：2011-03-18
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/0692 , H01L29/41725 , H01L29/42316
摘要： A terahertz wave radiating element includes: a first nitride semiconductor layer formed on a substrate; a second nitride semiconductor layer formed over the first nitride semiconductor layer, and having a wider bandgap than the first nitride semiconductor layer; and source, gate, and drain electrodes formed on the second nitride semiconductor layer. The source electrode is formed by a plurality of source electrode fingers that are arranged periodically, and the drain electrode is formed by a plurality of drain electrode fingers that are arranged periodically.
摘要翻译： 太赫兹波辐射元件包括：形成在基板上的第一氮化物半导体层; 形成在所述第一氮化物半导体层之上并且具有比所述第一氮化物半导体层更宽的带隙的第二氮化物半导体层; 以及形成在第二氮化物半导体层上的源极，栅极和漏电极。 源电极由周期性地排列的多个源电极指形成，漏电极由周期性排列的多个漏电极指形成。
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公开(公告)号：US07538357B2
公开(公告)日：2009-05-26
申请号：US11195639
申请日：2005-08-03
申请人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
IPC分类号： H01L29/207
CPC分类号： H01S5/18394 , H01L33/105 , H01L33/465 , H01L33/54 , H01S5/06226 , H01S5/18311 , H01S5/18319 , H01S5/18355 , H01S5/18358 , H01S5/18386
摘要： A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.
摘要翻译： 一种半导体发光器件包括：包括形成在衬底上的台面的空腔，所述台面具有有源层，并且通过围绕所述台面形成的凹部隔离; 以及填充有凹部的树脂层。 在作为输出从有源层发射的光的光输出面的空腔的上表面形成具有直径小于发射光的发射波长的开口的金属膜。
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4.发明申请公开(公告)号：US20060056473A1
公开(公告)日：2006-03-16
申请号：US11195625
申请日：2005-08-03
申请人： Tatsuya Tanigawa , Toshikazu Onishi , Tetsuzo Ueda
发明人： Tatsuya Tanigawa , Toshikazu Onishi , Tetsuzo Ueda
IPC分类号： H01S5/00
CPC分类号： H01S5/18347 , H01S5/0425 , H01S5/18311 , H01S5/18358 , H01S5/2063 , H01S2301/166 , H01S2301/176
摘要： A surface emitting laser element includes a mesa structure of a semiconductor multilayer film formed to have a convex cross section. A first insulating film of an inorganic material is formed on a side surface of the mesa structure, and on the first insulating film, a resin layer is formed to fill a space surrounding the mesa structure. A second insulating film of an inorganic material is formed on the resin layer, and an upper contact electrode with an electrode opening exposing part of the top surface of the mesa structure is formed on the second insulating film and the mesa structure. With this construction, oxidation and alteration of the resin layer during fabrication of the element can be suppressed to bury the mesa structure with no gap created. Therefore, a semiconductor light-emitting element with high reliability can be provided.
摘要翻译： 表面发射激光元件包括形成为具有凸形横截面的半导体多层膜的台面结构。 无机材料的第一绝缘膜形成在台面结构的侧面上，在第一绝缘膜上形成树脂层以填充台面结构周围的空间。 在树脂层上形成无机材料的第二绝缘膜，在第二绝缘膜和台面结构上形成具有露出台面结构的顶面部分的电极开口的上接触电极。 利用这种结构，可以抑制元件制造过程中的树脂层的氧化和改变，以便不产生间隙而埋入台面结构。 因此，可以提供高可靠性的半导体发光元件。
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公开(公告)号：US20060038191A1
公开(公告)日：2006-02-23
申请号：US11195639
申请日：2005-08-03
申请人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
发明人： Toshikazu Onishi , Tatsuya Tanigawa , Tetsuzo Ueda
IPC分类号： H01L33/00
CPC分类号： H01S5/18394 , H01L33/105 , H01L33/465 , H01L33/54 , H01S5/06226 , H01S5/18311 , H01S5/18319 , H01S5/18355 , H01S5/18358 , H01S5/18386
摘要： A semiconductor light emitting device includes: a cavity including a mesa formed over a substrate, the mesa having an active layer and being isolated by a recess formed around the mesa; and a resin layer with which the recess is filled. On the upper surface of the cavity, which is a light output surface through which light emitted from the active layer is output, a metal film having an opening whose diameter is smaller than the emission wavelength of the emitted light is formed.
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6.发明授权Thermal transfer receiving sheet, production method thereof and image forming method using the sheet 有权热转印接收片材，其制造方法和使用该片材的成像方法公开(公告)号：US07745374B2
公开(公告)日：2010-06-29
申请号：US10566202
申请日：2004-08-04
申请人： Yoshimasa Tanaka , Masato Kawamura , Chikara Tsukada , Kyoko Uchida , Toshikazu Onishi , Toru Nakai , Kazuyuki Tachibana , Hideaki Shinohara
发明人： Yoshimasa Tanaka , Masato Kawamura , Chikara Tsukada , Kyoko Uchida , Toshikazu Onishi , Toru Nakai , Kazuyuki Tachibana , Hideaki Shinohara
CPC分类号： B41M5/42 , B41M5/44 , B41M2205/32 , B41M2205/36 , B41M2205/38
摘要： A thermal transfer receiving sheet comprising a sheet-like support having sequentially formed on at least one surface thereof a hollow particle-containing intermediate layer and an image receiving layer, wherein the hollow particles have an average particle diameter of 0.2 to 35 μm and a hollow percentage by volume of 30 to 97% and the printing smoothness (Rp value) on the surface of the thermal transfer receiving sheet, as measured by using a Microtopograph under an applied pressure of 0.1 MPa 10 m-seconds after the initiation of pressure application, is 1.5 μm or less. A production method of the thermal transfer receiving sheet is also provided.
摘要翻译： 一种热转印接收片材，其包含片状载体，所述片状载体在其至少一个表面上依次形成有中空颗粒的中间层和图像接收层，其中所述中空颗粒的平均粒径为0.2〜35μm， 在热压接受片的表面上的印刷平滑度（Rp值）在压力施加开始后的0.1MPa的施加压力下使用微图形仪测量， 为1.5μm以下。 还提供了热转印接收片材的制造方法。
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公开(公告)号：US07402447B2
公开(公告)日：2008-07-22
申请号：US11346373
申请日：2006-02-03
申请人： Toshikazu Onishi
发明人： Toshikazu Onishi
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/164 , H01S5/2231 , H01S5/3072 , H01S5/34326 , H01S5/3436
摘要： A semiconductor laser device according to the present invention has a semiconductor substrate, an active layer formed on the semiconductor substrate and made of a compound semiconductor containing phosphorus, a guide layer formed on the active layer and made of a compound semiconductor a dopant diffusion preventing layer formed on the guide layer and made of a semiconductor compound containing arsenic, and a clad layer formed on the dopant diffusion preventing layer and made of a compound semiconductor containing a dopant.
摘要翻译： 根据本发明的半导体激光器件具有半导体衬底，形成在半导体衬底上并由含磷的化合物半导体构成的有源层，形成在有源层上并由化合物半导体构成的引导层，掺杂剂扩散防止层 形成在引导层上并由含砷的半导体化合物制成，以及形成在掺杂剂扩散防止层上并由含有掺杂剂的化合物半导体构成的覆层。
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公开(公告)号：US07215691B2
公开(公告)日：2007-05-08
申请号：US10665469
申请日：2003-09-22
申请人： Toshikazu Onishi
发明人： Toshikazu Onishi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/2206 , H01S5/2231 , H01S5/305 , H01S5/3054 , H01S5/34326 , H01S5/3436
摘要： A semiconductor laser device has an active layer, a first cladding layer formed on the active layer, and a second cladding layer formed on the first cladding layer. The first cladding layer is doped with magnesium as a first impurity to have a high resistivity. The second cladding layer is doped with zinc as a second impurity to have a resistivity lower than the resistivity of the first cladding layer.
摘要翻译： 半导体激光器件具有有源层，形成在有源层上的第一覆层和形成在第一覆层上的第二覆层。 第一包层掺杂有镁作为第一杂质以具有高电阻率。 第二包层掺杂有锌作为第二杂质，以使其电阻率低于第一包层的电阻率。
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公开(公告)号：US07041524B2
公开(公告)日：2006-05-09
申请号：US10961036
申请日：2004-10-12
申请人： Toshikazu Onishi
发明人： Toshikazu Onishi
IPC分类号： H01L21/00
CPC分类号： B82Y20/00 , H01S5/164 , H01S5/2231 , H01S5/3086 , H01S5/3425 , H01S5/3436
摘要： A semiconductor laser device according to the present invention has a semiconductor substrate having a first region and a second region adjacent to the first region, a first active layer formed on the first region and made of a compound semiconductor, a first clad layer formed on the first active layer and made of a compound semiconductor containing a first dopant, and a second active region formed on the second region and made of a compound semiconductor containing a second dopant having a diffusion coefficient with respect to the first active region which is higher than that of the first dopant.
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公开(公告)号：US20050152430A1
公开(公告)日：2005-07-14
申请号：US11023419
申请日：2004-12-29
CPC分类号： H01S5/18394 , H01S5/1046 , H01S5/18319 , H01S5/1835
摘要： According to the present invention, a first p-side electrode 7A made of metal which is provided with regularly arranged holes 10 having a diameter smaller than a laser oscillation wavelength and a second p-side electrode 7B arranged around the periphery of the first p-type electrode 7A are used as a p-side mirror of a surface-emitting laser. Light in a resonator formed of a p-side electrode 7 and an n-type mirror 2 is first converted to a surface plasmon and then reconverted to the light by the p-side electrode 7A, and then emitted outside the resonator. This improves the light transmittance, thereby permitting use of metal which is considered to have inherently low light transmittance as a material for the p-side electrode 7. If the p-side electrode 7 is made of metal, operating voltage is reduced and heat dissipation improves, without causing a spike in a valence band, which occurs when a semiconductor layer is used. Further, due to the nonlinear effect of the mirror, optical feedback to the inside of the resonator is controlled, whereby a laser device with excellent noise characteristic is obtained.
摘要翻译： 根据本发明，由金属制成的第一p侧电极7A，其具有规则排列的直径小于激光振荡波长的孔10，第二p侧电极7B布置在第一 p型电极7A用作表面发射激光器的p侧反射镜。 首先将由p侧电极7和n型反射镜2形成的谐振器中的光转换为表面等离子体，然后通过p侧电极7A再次转换为光，然后发射到谐振器外部。 这提高了透光率，从而允许使用被认为具有固有的低透光率的金属作为p侧电极7的材料。 如果p侧电极7由金属制成，则工作电压降低，散热改善，而不会在使用半导体层时发生价带的尖峰。 此外，由于反射镜的非线性效应，对谐振器内部的光反馈被控制，从而获得具有优异噪声特性的激光器件。
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