公开(公告)号：US20230005786A1

公开(公告)日：2023-01-05

申请号：US17931445

申请日：2022-09-12

Applicant: Turun yliopisto

Inventor： Pekka LAUKKANEN ,  Mikhail Kuzmin ,  Jaakko Mäkelä ,  Marjukka Tuominen ,  Marko Punkkinen ,  Antti Lahti ,  Kalevi Kokko ,  Juha-Pekka Lehtio

IPC: H01L21/762 ,  H01L21/02 ,  H01L23/31

Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10−8 to 1·10−4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.

公开(公告)号：US20230223252A1

公开(公告)日：2023-07-13

申请号：US17995078

申请日：2021-03-29

Applicant: Turun yliopisto

Inventor： Pekka Laukkanen ,  Zahra Jahanshah Rad ,  Juha-Pekka Lehtiö ,  Mikhail Kuzmin ,  Marko Punkkinen ,  Kalevi Kokko

IPC: H01L21/02 ,  H01L21/67 ,  H01L31/18 ,  C23C16/455 ,  C23C16/56 ,  C23C16/40

CPC classification number: H01L21/02356 ,  H01L21/02337 ,  H01L21/67098 ,  H01L31/1868 ,  C23C16/45525 ,  C23C16/56 ,  C23C16/401 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/0228

Abstract: This disclosure relates to a method (100) for passivating a semiconductor structure, comprising a semiconductor layer and an oxide layer on the semiconductor layer; a semiconductor structure; and a vacuum processing system. The method (100) comprises providing the semiconductor structure (110) in a vacuum chamber (310) and, while keeping the semiconductor structure in the vacuum chamber (120) throughout a refinement period with a duration of at least 25 s refining the oxide layer (130) by maintaining temperature (131) of the semiconductor structure within a refinement temperature range extending from 20° C., to 800° C., and maintaining total pressure (132) in the vacuum chamber below a maximum total pressure, of 1×10−3 mbar.

公开(公告)号：US11646193B2

公开(公告)日：2023-05-09

申请号：US16707090

申请日：2019-12-09

Applicant: Turun Yliopisto

Inventor： Mikhail Kuzmin ,  Pekka Laukkanen ,  Yasir Muhammad ,  Marjukka Tuominen ,  Johnny Dahl ,  Veikko Tuominen ,  Jaakko Makela ,  Marko Punkkinen ,  Kalevi Kokko

IPC: H01L21/02

CPC classification number: H01L21/02164 ,  H01L21/0217 ,  H01L21/0223 ,  H01L21/02172 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02244 ,  H01L21/02247 ,  H01L21/02255

Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

公开(公告)号：US11923236B2

公开(公告)日：2024-03-05

申请号：US17931445

申请日：2022-09-12

Applicant: Turun yliopisto

Inventor： Pekka Laukkanen ,  Mikhail Kuzmin ,  Jaakko Mäkelä ,  Marjukka Tuominen ,  Marko Punkkinen ,  Antti Lahti ,  Kalevi Kokko ,  Juha-Pekka Lehtiö

IPC: H01L21/76 ,  H01L21/02 ,  H01L21/762 ,  H01L23/31

CPC classification number: H01L21/7624 ,  H01L21/02238 ,  H01L21/02255 ,  H01L23/3171 ,  H01L21/02164 ,  H01L21/02172 ,  H01L21/02271 ,  H01L21/0228

Abstract: A method for forming a semiconductor structure comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing a crystalline silicon substrate having a substantially clean deposition surface in a vacuum chamber; heating the silicon substrate to an oxidation temperature To in the range of 550 to 1200 ° C.; supplying, while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10−8 to 1·10−4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer and a crystalline silicon top layer. Related semiconductor structures are described.

公开(公告)号：US20240321590A1

公开(公告)日：2024-09-26

申请号：US18572938

申请日：2022-06-22

Applicant: Turun yliopisto

Inventor： Zahra Jahanshah Rad ,  Pekka Laukkanen ,  Juha-Pekka Lehtiö ,  Marko Punkkinen ,  Kalevi Kokko

IPC: H01L21/324 ,  H01L29/20

CPC classification number: H01L21/3245 ,  H01L29/20

Abstract: This disclosure relates to a semiconductor structure, a semiconductor device, and a method for forming a semiconductor structure. The semiconductor structure comprises a crystalline III-V semiconductor substrate, the semiconductor substrate comprising a group 13 post-transition metal element and arsenide, and crystalline particles chemically bonded to the semiconductor substrate, the particles comprising the group 13 post-transition metal element and oxygen.

公开(公告)号：US11615952B2

公开(公告)日：2023-03-28

申请号：US15505892

申请日：2016-02-17

Applicant: Turun Yliopisto

Inventor： Mikhail Kuzmin ,  Pekka Laukkanen ,  Yasir Muhammad ,  Marjukka Tuominen ,  Johnny Dahl ,  Veikko Tuominen ,  Jaakko Makela ,  Marko Punkkinen ,  Kalevi Kokko

IPC: H01L21/02

Abstract: A method for forming a foreign oxide or foreign nitride layer (6) on a substrate (1) of a semiconductor comprises providing a semiconductor substrate (1) having an oxidized or nitridized surface layer (3), supplying a foreign element (5) on the oxidized or nitridized surface layer; and keeping the oxidized or nitridized surface layer (3) at an elevated temperature so as to oxidize or nitridize at least partially the foreign element by the oxygen or nitrogen, respectively, initially present in the oxidized or nitridized surface layer (3).

公开(公告)号：US11443977B2

公开(公告)日：2022-09-13

申请号：US16611413

申请日：2018-05-30

Applicant: Turun yliopisto

Inventor： Pekka Laukkanen ,  Mikhail Kuzmin ,  Jaakko Mäkelä ,  Marjukka Tuominen ,  Marko Punkkinen ,  Antti Lahti ,  Kalevi Kokko ,  Juha-Pekka Lehtiö

IPC: H01L21/762 ,  H01L21/02 ,  H01L23/31

Abstract: A method (100) for forming a semiconductor structure (200) comprising a silicon-on-insulator layer structure with crystalline silicon oxide SiOx as the insulator material comprises: providing (120) a crystalline silicon substrate (201) having a substantially clean deposition surface (202) in a vacuum chamber; heating (130) the silicon substrate to an oxidation temperature To in the range of 550 to 1200, 550 to 1000, or 550 to 850° C.; supplying (140), while keeping the silicon substrate in the oxidation temperature, with an oxidation pressure Po in the range of 1·10−8 to 1·10−4 mbar in the vacuum chamber, molecular oxygen O2 into the vacuum chamber with an oxygen dose Do in the range of 0.1 to 1000 Langmuir; whereby a crystalline silicon oxide layer (204) with a thickness of at least two molecular layers is formed within the silicon substrate, between a crystalline silicon base layer (203) and a crystalline silicon top layer (205).