公开(公告)号：US20160141420A1

公开(公告)日：2016-05-19

申请号：US14583771

申请日：2014-12-29

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： TAI-JU CHEN ,  YI-HAN YE ,  TE-CHIH CHEN

IPC: H01L29/78 ,  H01L29/167 ,  H01L29/161 ,  H01L29/08 ,  H01L21/02 ,  H01L29/51 ,  H01L29/66 ,  H01L21/762 ,  H01L21/28 ,  H01L21/3213 ,  H01L29/06 ,  H01L29/49

CPC classification number: H01L29/66704 ,  H01L21/02532 ,  H01L21/28035 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/165 ,  H01L29/407 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7851

Abstract: A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The high-voltage FinFET device includes: at least one fin structure, a working gate, a shallow trench isolation structure, and a first dummy gate. The fin structure includes a first-type well region and a second-type well region adjacent to the first-type well region, and further includes a first part and a second part. A trench is disposed between the first part and the second part and disposed in the first-type well region. A drain doped layer is disposed on the first part which is disposed in the first-type well region, and a source doped layer is disposed on the second part which is disposed in the second-type well region. The working gate is disposed on the fin structure which is disposed in the first-type well region and in the second-type well region.

Abstract translation: 提供具有LDMOS结构的高电压FinFET器件及其制造方法。 高压FinFET器件包括：至少一个鳍结构，工作栅极，浅沟槽隔离结构和第一虚拟栅极。 翅片结构包括与第一类型阱区域相邻的第一类型阱区域和第二类型阱区域，并且还包括第一部分和第二部分。 沟槽设置在第一部分和第二部分之间并且设置在第一类型的区域中。 漏极掺杂层设置在设置在第一类型阱区域中的第一部分上，并且源极掺杂层设置在布置在第二类型阱区域中的第二部分上。 工作栅极设置在布置在第一类型阱区域和第二类型阱区域中的鳍结构上。

公开(公告)号：US20170207322A1

公开(公告)日：2017-07-20

申请号：US15452734

申请日：2017-03-08

Applicant: UNITED MICROELECTRONICS CORPORATION

Inventor： TAI-JU CHEN ,  YI-HAN YE ,  TE-CHIH CHEN

IPC: H01L29/66 ,  H01L29/06 ,  H01L29/78 ,  H01L21/28 ,  H01L29/51 ,  H01L21/02 ,  H01L21/762 ,  H01L29/165

CPC classification number: H01L29/66704 ,  H01L21/02532 ,  H01L21/28035 ,  H01L21/76224 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/165 ,  H01L29/407 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/66795 ,  H01L29/6681 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7851

Abstract: A high-voltage FinFET device having LDMOS structure and a method for manufacturing the same are provided. The method includes: providing a substrate with a fin structure to define a first and a second type well regions; forming a trench in the first-type well region to separate the fin structure into a first part and a second part; forming a STI structure in the trench; forming a first and a second polycrystalline silicon gate stack structures at the fin structure; forming discontinuous openings on the exposed fin structure and growing an epitaxial material layer in the openings; doping the epitaxial material layer to form a drain and a source doped layers in the first and second parts respectively; and performing a RMG process to replace the first and second polycrystalline silicon gate stack structures with a first and second metal gate stack structures respectively.