公开(公告)号：US20250038037A1

公开(公告)日：2025-01-30

申请号：US18393621

申请日：2023-12-21

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： IL KWON SHIM ,  Dzafir Bin Mohd Shariff ,  Ronnie M. De Villa ,  Enrique E. SARILE, JR. ,  Chee Kay Chow ,  Jackson Fernandez Rosario ,  Chan Loong Neo

IPC: H01L21/683 ,  H01L21/67 ,  H01L21/687

Abstract: Lamination systems and methods of fabricating devices are disclosed. The lamination system includes multiple processing modules for delaminating a backgrinding (BG) from a surface of the wafer and laminating a dicing tape on the surface of the wafer. The system includes a wafer receiving module which is configured to hold the wafer in place with a position chuck throughout the delamination and lamination process. By using a single positioning chuck, more efficient processing is achieved. For example, there is no need to re-lign the wafer when it is moved from one chuck to another.

公开(公告)号：US20230377896A1

公开(公告)日：2023-11-23

申请号：US18319452

申请日：2023-05-17

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： Jackson Fernandez Rosario ,  Enrique E. Sarile Jr ,  Dzafir Bin Mohd Shariff ,  Ronnie M. De Villa ,  Chan Loong Neo ,  Phongsak Sawasdee

IPC: H01L21/3065 ,  H01L21/683 ,  H01L23/31 ,  H01L23/495 ,  H01L23/00

CPC classification number: H01L21/3065 ,  H01L21/6836 ,  H01L23/3107 ,  H01L23/4952 ,  H01L24/48 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/48247 ,  H01L2924/181

Abstract: Disclosed is a plasma diced die from the backside of the wafer using a back surface mask layer. The back surface mask layer remains on the backside of the die, serving as backside protection for the die. The plasma dicing may dice the wafer completely or partially. In the case of partial dicing, the partially diced wafer is expanded to singulate the wafer into individual dies by lateral force.

公开(公告)号：US20230154795A1

公开(公告)日：2023-05-18

申请号：US18054547

申请日：2022-11-11

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： Dzafir Bin Mohd Shariff ,  IL KWON SHIM ,  Enrique Jr Sarile ,  Jackson Fernandez Rosario ,  Ronnie M. De Villa ,  Chan Loong Neo

IPC: H01L21/78 ,  H01L21/308

CPC classification number: H01L21/78 ,  H01L21/3086 ,  H01L21/3085 ,  H01L21/3081

Abstract: The present disclosure relates to plasma dicing of wafer. More specifically, the present disclosure is directed to frame masks and methods for plasma dicing wafers utilizing frame masks. The frame mask includes a mask frame, wherein the mask frame includes a top ring mask support and a side ring mask support. A plurality of mask segments suspended from the top ring mask support by segment supports, the mask segments are configured to define dicing channels on a blank wafer. The frame mask is configured to removably sit onto a frame lift assembly in a plasma chamber of a plasma dicing tool, when fitted onto the frame lift assembly, the mask segments are disposed above a wafer on a wafer ring frame for plasma dicing. The mask frame is configured to enable flow of plasma therethrough to the wafer to etch the wafer to form dicing channels defined by the mask segments.

公开(公告)号：US20230274979A1

公开(公告)日：2023-08-31

申请号：US18175124

申请日：2023-02-27

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： Dzafir Bin Mohd Shariff ,  Enrique E. Sarile, JR. ,  Jackson Fernandez Rosario ,  Ronnie M. De Villa ,  Chan Loong Neo ,  Il Kwon Shim

IPC: H01L21/78 ,  H01L29/06 ,  H01L21/683

CPC classification number: H01L21/78 ,  H01L29/0657 ,  H01L21/6836 ,  H01L2221/68327 ,  H01L21/3065

Abstract: Reliable plasma dicing of a processed wafer with a die attach film (DAF) attached to the bottom wafer surface to singulate it into individual dies is disclosed. Laser processing is employed to form mask openings in a passivation stack of a processed wafer to serve as a dicing mask. Laser processing is employed to form a modified layer with cracks on a bottom portion of the wafer. Plasma dicing partially dices the processed wafer to about the modified layer. The dicing tape is expanded laterally away from the center of the partially diced processed wafer, singulating it into individual dies. Singulation of the partially plasma diced processed wafer is facilitated by the modified layer.

公开(公告)号：US20230154796A1

公开(公告)日：2023-05-18

申请号：US18056726

申请日：2022-11-18

Applicant: UTAC Headquarters Pte. Ltd.

Inventor： Dzafir Bin Mohd Shariff ,  Enrique E. Sarile, JR. ,  Jackson Fernandez Rosario ,  Ronnie M. De Villa ,  Chan Loong Neo

IPC: H01L21/78 ,  H01L23/31

CPC classification number: H01L21/78 ,  H01L23/3171

Abstract: Reliable plasma dicing of wafers to singulate it into individual dies is disclosed. Laser processing is employed to form mask openings in a passivation stack of a processed wafer. The patterned passivation stack serves as a plasma dicing mask for plasma dicing the wafer. The sidewalls of the mask openings may be flat or vertical sidewalls. In other cases, the sidewalls of the mask openings are slanted or chamfered sidewalls. The plasma dices the wafer using first and second plasma etch steps. The first plasma etch step etches to form scalloped sidewalls on the first portion of the die and the second plasma step etches to form flat or vertical sidewalls on a second portion of the die. The second portion of the die is the lower portion of the substrate or wafer. This prevents backside notching to improve reliability.