公开(公告)号：US5427983A

公开(公告)日：1995-06-27

申请号：US997827

申请日：1992-12-29

申请人： Umar M. U. Ahmad ,  Harsaran S. Bhatia ,  Satya P. S. Bhatia ,  Hormazdyar M. Dalal ,  William H. Price ,  Sampath Purushothaman

发明人： Umar M. U. Ahmad ,  Harsaran S. Bhatia ,  Satya P. S. Bhatia ,  Hormazdyar M. Dalal ,  William H. Price ,  Sampath Purushothaman

IPC分类号： H01L21/203 ,  C23C14/04 ,  C23C28/02 ,  H01L21/48 ,  H01L21/52 ,  H01L23/12 ,  H01L23/498 ,  H05K1/09 ,  H05K3/14 ,  H05K3/24 ,  H01L21/44

CPC分类号： H01L23/49811 ,  C23C14/042 ,  H01L21/4846 ,  H01L23/498 ,  H01L23/49866 ,  H01L2924/0002 ,  H01L2924/09701 ,  H05K3/143 ,  H05K3/244 ,  Y10S148/105 ,  Y10T428/12528 ,  Y10T428/12743 ,  Y10T428/1275 ,  Y10T428/12806 ,  Y10T428/12819 ,  Y10T428/12861 ,  Y10T428/12875 ,  Y10T428/12882 ,  Y10T428/12896 ,  Y10T428/12903 ,  Y10T428/1291

摘要： A thin-layer metallization structure in which the final gold layer is deposited by evaporation with the surface onto which it is evaporated maintained at an elevated temperature. By evaporating the uppermost gold layer of the structure at an elevated substrate temperature, the gold atoms have a higher mobility, causing the deposited gold to spread over the edge of the structure and cover the otherwise exposed edges, including the edge at the copper interface.

摘要翻译： 其中通过蒸发沉积最终金层的薄层金属化结构与蒸发的表面保持在升高的温度。 通过在升高的基板温度下蒸发结构的最上层的金层，金原子具有更高的迁移率，导致沉积的金铺展在结构的边缘上并且覆盖否则暴露的边缘，包括在铜界面处的边缘。