Component that operates using acoustic waves and method for producing said component
    2.
    发明授权
    Component that operates using acoustic waves and method for producing said component 有权
    使用声波操作的部件和用于制造所述部件的方法

    公开(公告)号:US08471652B2

    公开(公告)日:2013-06-25

    申请号:US11576981

    申请日:2005-09-26

    CPC分类号: H03H9/02228 Y10T29/42

    摘要: An acoustic wave component includes a layer system having a piezoelectric layer and a first metal layer arranged on the piezoelectric layer, a first resonator having a first electrode in the first metal layer, where the first metal layer includes electrode structures periodically arranged in a direction of propagation of a wave through the acoustic wave component, and a second resonator coupled to the first resonator and electrically isolated from the first resonator. The layer system includes a waveguide for guiding a guided bulk acoustic wave in a lateral direction of the acoustic wave component.

    摘要翻译: 声波分量包括具有压电层和布置在压电层上的第一金属层的层系,第一谐振器,具有在第一金属层中的第一电极,其中第一金属层包括周期性地沿着 通过声波分量的波的传播,以及耦合到第一谐振器并与第一谐振器电隔离的第二谐振器。 层系统包括用于在声波分量的横向方向上引导引导的体声波的波导。

    Circuit Working With Acoustic Volume Waves And Component Connected To The Circuit
    3.
    发明申请
    Circuit Working With Acoustic Volume Waves And Component Connected To The Circuit 有权
    电路工作与音量波和组件连接到电路

    公开(公告)号:US20080297277A1

    公开(公告)日:2008-12-04

    申请号:US11576985

    申请日:2005-09-23

    IPC分类号: H03H9/205

    摘要: A circuit for use with bulk acoustic waves includes a first electroacoustic system in a first branch and a second electroacoustic system in a second branch. The first electroacoustic system includes a first resonator and a second resonator that are in series in the first branch, and that are galvanically separated, and acoustically coupled, by a first coupling system. The second electroacoustic system includes a first resonator and a second resonator that are connected in series in the second branch, and that are galvanically separated, and acoustically coupled, by a second coupling system. The first and second electroacoustic systems are acoustically coupled via the first and second coupling systems and/or electrically coupled.

    摘要翻译: 用于体声波的电路包括第一分支中的第一电声系统和第二分支中的第二电声系统。 第一电声系统包括第一谐振器和第二谐振器,该第一谐振器和第二谐振器在第一分支中串联并且通过第一耦合系统电流分离和声耦合。 第二电声系统包括第一共振器和第二共振器,该第一谐振器和第二谐振器在第二分支中串联连接,并通过第二耦合系统电流分离和声耦合。 第一和第二电声系统通过第一和第二耦合系统进行声学耦合和/或电耦合。

    Circuit working with acoustic volume waves and component connected to the circuit
    4.
    发明授权
    Circuit working with acoustic volume waves and component connected to the circuit 有权
    电路工作与声音波和组件连接到电路

    公开(公告)号:US07956705B2

    公开(公告)日:2011-06-07

    申请号:US11576985

    申请日:2005-09-23

    IPC分类号: H03H9/205 H01L41/087

    摘要: The invention relates to a circuit operating with bulk acoustic waves with at least electroacoustic systems, each arranged in a branch (Z1, Z2, Z3, Z4), wherein each electroacoustic system comprises at least two series-connected resonators (R11, R12; R21, R22; R31, R32; R41, R42) in the respective branch, which are galvanically separated from one another and acoustically coupled to one another by means of a coupling system (K1, K2, K3, K4) arranged therebetween. The electroacoustic systems are acoustically coupled via their coupling system (K1, K2) and/or electrically coupled to one another.

    摘要翻译: 用于体声波的电路包括第一分支中的第一电声系统和第二分支中的第二电声系统。 第一电声系统包括第一谐振器和第二谐振器,该第一谐振器和第二谐振器在第一分支中串联并且通过第一耦合系统电流分离和声耦合。 第二电声系统包括第一共振器和第二共振器,该第一谐振器和第二谐振器在第二分支中串联连接,并通过第二耦合系统电流分离和声耦合。 第一和第二电声系统通过第一和第二耦合系统进行声学耦合和/或电耦合。

    Wide bandwidth acoustic surface wave component
    5.
    发明授权
    Wide bandwidth acoustic surface wave component 有权
    表面声波分量

    公开(公告)号:US07589453B2

    公开(公告)日:2009-09-15

    申请号:US11720576

    申请日:2005-10-20

    IPC分类号: H03H9/25 H01L41/047

    CPC分类号: H03H9/14541 H03H9/02929

    摘要: A surface acoustic wave component includes a piezoelectric substrate and an electrode structure that includes multiple layers and that is on the piezoelectric substrate. A dielectric layer is above the electrode structure. The dielectric layer has an acoustic impedance Za,d. The multiple layers include a first layer system that includes at least one first layer made of a first material, which has an acoustic impedance that is less than 2Za,d. The second layer system includes at least one second layer made of a second material, which has an acoustic impedance that exceeds 2Za,d. The second layer system has a height that is between 15% and 85% of a total height of the multiple layers.

    摘要翻译: 表面声波分量包括压电基片和包括多层并且在压电基片上的电极结构。 介电层位于电极结构之上。 电介质层具有声阻抗Za,d。 多层包括第一层系统,其包括由第一材料制成的至少一个第一层,其具有小于2Za的声阻抗d。 第二层系统包括由第二材料制成的至少一个第二层,其具有超过2Za的声阻抗d。 第二层系统的高度在多层的总高度的15%至85%之间。

    Component That Operates Using Acoustic Waves And Method For Producing Said Component
    7.
    发明申请
    Component That Operates Using Acoustic Waves And Method For Producing Said Component 有权
    使用声波操作的部件和用于制造所述部件的方法

    公开(公告)号:US20080094150A1

    公开(公告)日:2008-04-24

    申请号:US11576981

    申请日:2005-09-26

    CPC分类号: H03H9/02228 Y10T29/42

    摘要: The invention relates to a component operating with guided bulk acoustic waves, GBAW, with a layer system that comprises a piezoelectric layer (PS1) and a first metal layer (ME1) arranged thereon. The layer system forms a waveguide in which the guided bulk acoustic wave is guided in the lateral direction. The component comprises two resonators acoustically coupled to one another and electrically isolated from one another. The corresponding resonator comprises an electrode (A), formed in a metal layer (ME1), with electrode structures periodically arranged in the wave-propagation direction.

    摘要翻译: 本发明涉及一种使用包括压电层(PS 1)和布置在其上的第一金属层(ME 1)的层系统操作的引导体声波GBAW。 层系统形成导向体声波在横向上被引导的波导。 该组件包括彼此声学耦合并且彼此电隔离的两个谐振器。 相应的谐振器包括形成在金属层(ME 1)中的电极(A),电极结构沿波传播方向周期性排列。

    Wide Bandwidth Acoustic Surface Wave Component
    8.
    发明申请
    Wide Bandwidth Acoustic Surface Wave Component 有权
    宽带声表面波分量

    公开(公告)号:US20080012450A1

    公开(公告)日:2008-01-17

    申请号:US11720576

    申请日:2005-10-20

    IPC分类号: H03H9/25

    CPC分类号: H03H9/14541 H03H9/02929

    摘要: A surface acoustic wave component includes a piezoelectric substrate and an electrode structure that includes multiple layers and that is on the piezoelectric substrate. A dielectric layer is above the electrode structure. The dielectric layer has an acoustic impedance Za,d. The multiple layers include a first layer system that includes at least one first layer made of a first material, which has an acoustic impedance that is less than 2Za,d. The second layer system includes at least one second layer made of a second material, which has an acoustic impedance that exceeds 2Za,d. The second layer system has a height that is between 15% and 85% of a total height of the multiple layers.

    摘要翻译: 表面声波分量包括压电基片和包括多层并且在压电基片上的电极结构。 介电层位于电极结构之上。 介电层具有声阻抗Z a a,d i。 多层包括第一层系统,其包括由第一材料制成的至少一个第一层,其具有小于2Za,d的声阻抗。 第二层系统包括由第二材料制成的至少一个第二层,其具有超过2Za,d的声阻抗。 第二层系统的高度在多层的总高度的15%至85%之间。

    Electroacoustic component
    9.
    发明授权
    Electroacoustic component 有权
    电声组件

    公开(公告)号:US08258895B2

    公开(公告)日:2012-09-04

    申请号:US12094710

    申请日:2006-11-15

    IPC分类号: H03H9/00

    CPC分类号: H03H9/0222

    摘要: An electroacoustic component includes a carrier substrate and a piezosubstrate having piezoelectric properties. The electroacoustic component also includes a layer system between the carrier substrate and the piezosubstrate.

    摘要翻译: 电声部件包括载体基板和具有压电特性的压电基板。 电声组件还包括在载体衬底和压电衬底之间的层系统。

    MEMS component and method for production
    10.
    发明授权
    MEMS component and method for production 有权
    MEMS组件和生产方法

    公开(公告)号:US08110962B2

    公开(公告)日:2012-02-07

    申请号:US12642357

    申请日:2009-12-18

    IPC分类号: H01L29/84

    CPC分类号: H03H9/02866 H03H9/14538

    摘要: A MEMS component includes a chip that has a rear side having a low roughness of less than one tenth of the wavelength at the center frequency of an acoustic wave propagating in the component. Metallic structures for scattering bulk acoustic waves are provided on the rear side of the chip and a material of the metallic structures is acoustically matched to a material of the chip.

    摘要翻译: MEMS部件包括芯片,该芯片的后侧具有小于在部件中传播的声波的中心频率处波长的十分之一的粗糙度。 用于散射体声波的金属结构设置在芯片的后侧,并且金属结构的材料与芯片的材料声学匹配。