公开(公告)号：US08337950B2

公开(公告)日：2012-12-25

申请号：US12786245

申请日：2010-05-24

申请人： Victor Nguyen ,  Yi Chen ,  Mihaela Balseanu ,  Isabelita Roflox ,  Li-Qun Xia ,  Derek R Witty

发明人： Victor Nguyen ,  Yi Chen ,  Mihaela Balseanu ,  Isabelita Roflox ,  Li-Qun Xia ,  Derek R Witty

IPC分类号： C23C16/38 ,  C23C16/30

CPC分类号： C23C16/30 ,  C23C16/45523 ,  H01L21/02112 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/32139

摘要： Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.

摘要翻译： 提供了用富硼膜处理衬底的方法。 富含硼的材料的图案层沉积在衬底上并且可以用作蚀刻停止层。 通过改变化学组成，可以对不同的蚀刻化学物质优化富硼材料的选择性和蚀刻速率。 富硼材料可以沉积在层叠堆叠衬底上多层并以图案蚀刻。 然后可以用多个蚀刻化学品蚀刻暴露的层堆叠。 每个富硼层可以具有针对多个蚀刻化学物质而优化的不同的化学组成。

公开(公告)号：US20100233633A1

公开(公告)日：2010-09-16

申请号：US12786245

申请日：2010-05-24

申请人： Victor Nguyen ,  Yi Chen ,  Mihaela Balseanu ,  Isabelita Roflox ,  Li-Qun Xia ,  Derek R. Witty

发明人： Victor Nguyen ,  Yi Chen ,  Mihaela Balseanu ,  Isabelita Roflox ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： G03F7/20 ,  C23C16/44 ,  B05D3/06

CPC分类号： C23C16/30 ,  C23C16/45523 ,  H01L21/02112 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31144 ,  H01L21/3212 ,  H01L21/32139

摘要： Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.

摘要翻译： 提供了用富硼膜处理衬底的方法。 富含硼的材料的图案层沉积在衬底上并且可以用作蚀刻停止层。 通过改变化学组成，可以对不同的蚀刻化学物质优化富硼材料的选择性和蚀刻速率。 富硼材料可以沉积在层叠堆叠衬底上多层并以图案蚀刻。 然后可以用多个蚀刻化学品蚀刻暴露的层堆叠。 每个富硼层可以具有针对多个蚀刻化学物质而优化的不同的化学组成。

公开(公告)号：US20120196450A1

公开(公告)日：2012-08-02

申请号：US13365226

申请日：2012-02-02

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/3105 ,  H01L21/318 ,  H01L21/316

CPC分类号： H01L21/0234 ,  C23C16/345 ,  C23C16/56 ,  H01L21/02348 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with some embodiments, a deposited silicon nitride film is exposed to curing with plasma and ultraviolet (UV) radiation, thereby helping remove hydrogen from the film and increasing film stress. In accordance with other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据一些实施例，沉积的氮化硅膜暴露于等离子体和紫外（UV）辐射的固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化循环的整合方法形成氮化硅膜，以在底层凸起特征的尖角处保留膜的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US08148269B2

公开(公告)日：2012-04-03

申请号：US12415759

申请日：2009-03-31

申请人： Mihaela Balseanu ,  Christopher D. Bencher ,  Yongmei Chen ,  Li Yan Miao ,  Victor Nguyen ,  Isabelita Roflox ,  Li-Qun Xia ,  Derek R. Witty

发明人： Mihaela Balseanu ,  Christopher D. Bencher ,  Yongmei Chen ,  Li Yan Miao ,  Victor Nguyen ,  Isabelita Roflox ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/31144 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/318 ,  H01L21/76832 ,  H01L29/4966

摘要： A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.

摘要翻译： 提供了一种形成邻近衬底结构的间隔物材料的方法和装置。 在一个实施例中，提供了一种用于处理衬底的方法，包括将具有邻近衬底表面的衬底结构的衬底放置在沉积室中，在衬底结构和衬底表面上沉积间隔层，以及蚀刻间隔层以暴露衬底 结构和衬底表面的一部分，其中间隔层邻近衬底结构设置。 间隔层可以包括氮化硼材料。 间隔层可以包括基底间隔层和衬垫层，并且可以在两步蚀刻工艺中蚀刻间隔层。

公开(公告)号：US08138104B2

公开(公告)日：2012-03-20

申请号：US11762590

申请日：2007-06-13

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek R. Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/469

CPC分类号： H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US20090263972A1

公开(公告)日：2009-10-22

申请号：US12415759

申请日：2009-03-31

申请人： Mihaela Balseanu ,  Christopher D. Bencher ,  Yongmei Chen ,  Li Yan Miao ,  Victor Nguyen ,  Isabelita Roflox ,  Li-Qun Xia ,  Derek R. Witty

发明人： Mihaela Balseanu ,  Christopher D. Bencher ,  Yongmei Chen ,  Li Yan Miao ,  Victor Nguyen ,  Isabelita Roflox ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/311

CPC分类号： H01L21/31144 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/31122 ,  H01L21/318 ,  H01L21/76832 ,  H01L29/4966

摘要： A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.

摘要翻译： 提供了一种形成邻近衬底结构的间隔物材料的方法和装置。 在一个实施例中，提供了一种用于处理衬底的方法，包括将具有邻近衬底表面的衬底结构的衬底放置在沉积室中，在衬底结构和衬底表面上沉积间隔层，以及蚀刻间隔层以暴露衬底 结构和衬底表面的一部分，其中间隔层邻近衬底结构设置。 间隔层可以包括氮化硼材料。 间隔层可以包括基底间隔层和衬垫层，并且可以在两步蚀刻工艺中蚀刻间隔层。

公开(公告)号：US20140273530A1

公开(公告)日：2014-09-18

申请号：US14212425

申请日：2014-03-14

申请人： Victor Nguyen ,  Isabelita Roflox ,  Mihaela Balseanu ,  Li-Qun Xia ,  Heng Pan ,  Wei Liu ,  Malcolm J. Bevan ,  Christopher S. Olsen ,  Johanes F. Swenberg

发明人： Victor Nguyen ,  Isabelita Roflox ,  Mihaela Balseanu ,  Li-Qun Xia ,  Heng Pan ,  Wei Liu ,  Malcolm J. Bevan ,  Christopher S. Olsen ,  Johanes F. Swenberg

IPC分类号： H01L21/02

CPC分类号： H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02329 ,  H01L21/0234 ,  H01L21/02348 ,  H01L29/7843

摘要： Provided are methods post deposition treatment of films comprising SiN. Certain methods pertain to providing a film comprising SiN; and exposing the film to an inductively coupled plasma, capacitively coupled plasma or a microwave plasma to provide a treated film with a modulated film stress and/or wet etch rate in dilute HF. Certain other methods comprise depositing a PEALD SiN film followed by exposure to a plasma nitridation process or a UV treatment to provide a treated film.

摘要翻译： 提供了沉积处理包括SiN的膜的方法。 某些方法涉及提供包含SiN的膜; 并将该膜暴露于电感耦合等离子体，电容耦合等离子体或微波等离子体，以在稀HF中提供具有调制薄膜应力和/或湿蚀刻速率的处理薄膜。 某些其它方法包括沉积PEALD SiN膜，然后暴露于等离子体氮化处理或UV处理以提供经处理的膜。

公开(公告)号：US20080020591A1

公开(公告)日：2008-01-24

申请号：US11762590

申请日：2007-06-13

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/31

CPC分类号： H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US09984868B2

公开(公告)日：2018-05-29

申请号：US14211024

申请日：2014-03-14

申请人： Victor Nguyen ,  Woong Jae Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： Victor Nguyen ,  Woong Jae Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/469 ,  H01L21/02 ,  C23C16/04 ,  C23C16/34 ,  C23C16/455 ,  C23C16/56

CPC分类号： H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348

摘要： Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.

公开(公告)号：US08758638B2

公开(公告)日：2014-06-24

申请号：US13104314

申请日：2011-05-10

申请人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： Weifeng Ye ,  Victor Nguyen ,  Mei-Yee Shek ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/3065 ,  H01L21/302

CPC分类号： H01L21/02074 ,  H01L21/76883

摘要： A method for the removal of copper oxide from a copper and dielectric containing structure of a semiconductor chip is provided. The copper and dielectric containing structure may be planarized by chemical mechanical planarization (CMP) and treated by the method to remove copper oxide and CMP residues. Annealing in a hydrogen (H2) gas and ultraviolet (UV) environment removes copper oxide, and a pulsed ammonia plasma removes CMP residues.

摘要翻译： 提供了一种从铜中除去氧化铜和包含半导体芯片的结构的方法。 可以通过化学机械平面化（CMP）对包含铜和电介质的结构进行平面化，并通过除去氧化铜和CMP残留物的方法进行处理。 在氢（H2）气体和紫外线（UV）环境中退火除去氧化铜，脉冲氨等离子体去除CMP残留物。