摘要:
A high-pressure pump for supplying fuel to an internal-combustion engine has a pump body and an actuating shaft which extends along a longitudinal axis and which is supported rotatably about the longitudinal axis by the pump body. The shaft has an eccentric portion and a prismatic jacking end. A first pumping station has a gear engaged with the prismatic jacking end and a second pumping station has at least one piston. The piston is slidable relative to the pump body transversely with respect to the longitudinal axis and is actuated by the eccentric portion of the actuating shaft. The prismatic jacking end is made of a harder material than the material with which the remainder of the actuating shaft is made.
摘要:
A high-pressure pump for supplying fuel to an internal-combustion engine has a pump body and an actuating shaft which extends along a longitudinal axis and which is supported rotatably about the longitudinal axis by the pump body. The shaft has an eccentric portion and a prismatic jacking end. A first pumping station has a gear engaged with the prismatic jacking end and a second pumping station has at least one piston. The piston is slidable relative to the pump body transversely with respect to the longitudinal axis and is actuated by the eccentric portion of the actuating shaft. The prismatic jacking end is made of a harder material than the material with which the remainder of the actuating shaft is made.
摘要:
An electro-static discharge protection circuit including: a first input terminal and a second input terminal; a first output terminal coupled to the first input terminal, and a second output terminal coupled to the second input terminal; a first circuit branch connected between the first input terminal and the second input terminal, said first circuit branch including at least one first Zener diode having a cathode terminal and an anode terminal; a second circuit branch connected between the first output terminal and the second output terminal, wherein the first circuit branch comprises a load element coupled between the second input terminal and the anode terminal of the at least one first Zener diode; the second circuit branch includes a first transistor having a control terminal adapted to receive a transistor control voltage, the first transistor being coupled to the load element so as to receive from the load element the transistor control voltage.
摘要:
A MOS-gated power device integrated structure comprises a plurality of elementary units formed in a semiconductor material layer of a first conductivity type. Each elementary unit is formed in a body stripe of a second conductivity type. There are a plurality of body stripes of the second conductivity type extending substantially in parallel to each other and at least one source region of the first conductivity type disposed within each body stripe. A conductive gate layer is insulatively disposed over the semiconductor material layer between the body stripes in the form of a first web structure. A second web structure of the second conductivity type is formed in the semiconductor material layer and comprises an annular frame portion surrounding the plurality of body stripes and at least one first elongated stripe extending between two sides of the annular frame portion in a direction substantially orthogonal to the body stripes and that is merged at each end with the annular frame portion. The body stripes are divided by the at least one first elongated stripe into at least two groups of body stripes, wherein one end of each body stripe is merged with the annular frame portion of the second conductivity type and the other end is merged with the at least one first elongated stripe. A conductive gate finger is insulatively disposed above the first elongated stripe and is part of the first web structure. A conductive gate ring surrounds the conductive gate layer and the conductive gate finger and completes the first web structure. A metal gate finger is disposed above the conductive gate finger and is merged at its ends with a metal gate ring structure disposed above the conductive gate ring to provide a third web structure. Source metal plates cover the at least two groups of body stripes and contact each source region and each body stripe to form a source electrode of the power device. A bottom surface of the semiconductor material layer forms a drain of the power device.
摘要:
An electro-static discharge protection circuit including: a first input terminal and a second input terminal; a first output terminal coupled to the first input terminal, and a second output terminal coupled to the second input terminal; a first circuit branch connected between the first input terminal and the second input terminal, said first circuit branch including at least one first Zener diode having a cathode terminal and an anode terminal; a second circuit branch connected between the first output terminal and the second output terminal, wherein the first circuit branch comprises a load element coupled between the second input terminal and the anode terminal of the at least one first Zener diode; the second circuit branch includes a first transistor having a control terminal adapted to receive a transistor control voltage, the first transistor being coupled to the load element so as to receive from the load element the transistor control voltage.
摘要:
A MOS-gated power device integrated structure comprises a plurality of elementary units formed in a semiconductor material layer of a first conductivity type. Each elementary unit is formed in a body stripe of a second conductivity type. There are a plurality of body stripes of the second conductivity type extending substantially in parallel to each other and at least one source region of the first conductivity type disposed within each body stripe. A conductive gate layer is insulatively disposed over the semiconductor material layer between the body stripes in the form of a first web structure. A second web structure of the second conductivity type is formed in the semiconductor material layer and comprises an annular frame portion surrounding the plurality of bodystripes and at least one first elongated stripe extending between two sides of the annular frame portion in a direction substantially orthogonal to the body stripes and that is merged at each end with the annular frame portion. The body stripes are divided by the at least one first elongated stripe into at least two groups of body stripes, wherein one end of each body stripe is merged with the annular frame portion of the second conductivity type and the other end is merged with the at least one first elongated stripe. A conductive gate finger is insulatively disposed above the first elongated stripe and is part of the first web structure. A conductive gate ring surrounds the conductive gate layer and the conductive gate finger and completes the first web structure. A metal gate finger is disposed above the conductive gate finger and is merged at its ends with a metal gate ring structure disposed above the conductive gate ring to provide a third web structure. Source metal plates cover the at least two groups of body stripes and contact each source region and each body stripe to form a source electrode of the power device. A bottom surface of the semiconductor material layer forms a drain of the power device.
摘要:
A high-pressure pump is provided with a high-pressure delivery line, a low- pressure supply line, a pumping element defined by a piston and cylinder, a cylinder head, and a gasket. The gasket is essentially flat and is provided with a sheet extending in a first plane and that has a first hole defining part of the low-pressure supply line, a second hole into which the cylinder head can be inserted, and a third hole defining part of the high-pressure delivery line. A coating of elastic material is provided to extend only around the first and second holes.
摘要:
Power electronic MOS device of the type comprising a plurality of elementary power MOS transistors and a gate structure comprising a plurality of conductive strips realized with a first conductive material such as polysilicon, a plurality of gate fingers or metallic tracks connected to a gate pad and at least a connection layer arranged in series to at least one of said conductive strip. Such gate structure comprising at least a plurality of independent islands formed on the upper surface of the conductive strips and suitably formed on the connection layers. Said islands being realized with at least one second conductive material such as silicide.
摘要:
A high-pressure pump is provided with a high-pressure delivery line, a low-pressure supply line, a pumping element defined by a piston and cylinder, a cylinder head, and a gasket. The gasket is essentially flat and is provided with a sheet extending in a first plane and that has a first hole defining part of the low-pressure supply line, a second hole into which the cylinder head can be inserted, and a third hole defining part of the high-pressure delivery line. A coating of elastic material is provided to extend only around the first and second holes.
摘要:
Semiconductor device for high voltages including at least one power component and at least one edge termination. The edge termination includes a voltage divider including a plurality of MOS transistors in series, and the edge termination is connected between non-driveble terminals of said power component.