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公开(公告)号：US20120152901A1
公开(公告)日：2012-06-21
申请号：US13325455
申请日：2011-12-14
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32119 , H01J37/32449 , H01J37/32651 , H01J37/32669 , H01J37/32715 , H01J2237/334
摘要： Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.
摘要翻译： 公开了等离子体处理装置和方法。 本公开的实施例包括具有可操作以接收处理气体的内部空间的处理室，可操作以保持衬底的处理室内部的衬底保持器和至少一个电介质窗口。 金属屏蔽层邻近电介质窗设置。 金属屏蔽件可以具有周边部分和中心部分。 该处理设备包括一个主电感元件，其设置在与金属屏蔽的周边部分相邻的处理室的外部。 处理装置还可以包括设置在金属屏蔽件的中心部分和电介质窗口之间的次级电感元件。 初级和次级电感元件可以执行不同的功能，可以具有不同的结构配置，并且可以在不同的频率下工作。
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公开(公告)号：US09653264B2
公开(公告)日：2017-05-16
申请号：US13325455
申请日：2011-12-14
IPC分类号： H01J37/32
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32119 , H01J37/32449 , H01J37/32651 , H01J37/32669 , H01J37/32715 , H01J2237/334
摘要： Plasma processing apparatus and methods are disclosed. Embodiments of the present disclosure include a processing chamber having an interior space operable to receive a process gas, a substrate holder in the interior of the processing chamber operable to hold a substrate, and at least one dielectric window. A metal shield is disposed adjacent the dielectric window. The metal shield can have a peripheral portion and a central portion. The processing apparatus includes a primary inductive element disposed external to the processing chamber adjacent the peripheral portion of the metal shield. The processing apparatus can further include a secondary inductive element disposed between the central portion of the metal shield and the dielectric window. The primary and secondary inductive elements can perform different functions, can have different structural configurations, and can be operated at different frequencies.
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公开(公告)号：US20090114158A1
公开(公告)日：2009-05-07
申请号：US11936576
申请日：2007-11-07
CPC分类号： H01L21/68 , C23C14/50 , C23C14/541 , C23C16/4586 , F27B17/0025 , F27D5/0037 , H01L21/67109 , H01L21/67248
摘要： A workpiece support is disclosed defining a workpiece-receiving surface. The workpiece support includes a plurality of fluid zones. A fluid, such as a gas, is fed to the fluid zones for contact with a workpiece on the workpiece support. The fluid can have selected thermoconductivity characteristics for controlling the temperature of the workpiece at particular locations. In accordance with the present disclosure, at least certain of the fluid zones are at different azimuthal positions. In this manner, the temperature of the workpiece can be adjusted not only in a radial direction but also in an angular direction.
摘要翻译： 公开了一种限定工件接收表面的工件支撑件。 工件支撑件包括多个流体区域。 诸如气体的流体被供给到流体区域中以与工件支撑件上的工件接触。 流体可以具有选择的热传导特性，用于在特定位置控制工件的温度。 根据本公开，至少某些流体区域处于不同的方位位置。 以这种方式，工件的温度不仅可以在径向方向上而且在角度方向上进行调节。
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公开(公告)号：US07972444B2
公开(公告)日：2011-07-05
申请号：US11936576
申请日：2007-11-07
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/68 , C23C14/50 , C23C14/541 , C23C16/4586 , F27B17/0025 , F27D5/0037 , H01L21/67109 , H01L21/67248
摘要： A workpiece support is disclosed defining a workpiece-receiving surface. The workpiece support includes a plurality of fluid zones. A fluid, such as a gas, is fed to the fluid zones for contact with a workpiece on the workpiece support. The fluid can have selected thermoconductivity characteristics for controlling the temperature of the workpiece at particular locations. In accordance with the present disclosure, at least certain of the fluid zones are at different azimuthal positions. In this manner, the temperature of the workpiece can be adjusted not only in a radial direction but also in an angular direction.
摘要翻译： 公开了一种限定工件接收表面的工件支撑件。 工件支撑件包括多个流体区域。 诸如气体的流体被供给到流体区域中以与工件支撑件上的工件接触。 流体可以具有选择的热传导特性，用于在特定位置控制工件的温度。 根据本公开，至少某些流体区域处于不同的方位位置。 以这种方式，工件的温度不仅可以在径向方向上而且在角度方向上进行调节。
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公开(公告)号：US09214319B2
公开(公告)日：2015-12-15
申请号：US14239201
申请日：2012-07-30
CPC分类号： H01J37/321 , H01J37/32357 , H01J37/3244 , H05H1/46 , H05H2001/4667
摘要： A plasma reactor and method for improved gas injection for an inductive plasma source for dry strip plasma processing are disclosed. According to embodiments of the present disclosure, gas is fed into a plasma chamber through a gas injection channel located adjacent to the side wall of the plasma chamber, rather than from the center, so that the process gas enters the plasma chamber in a close proximity to the induction coil. In particular embodiments, the process gas that enters the chamber is forced to pass through a reactive volume or active region adjacent the induction coil where efficient heating of electrons occurs, providing increased efficiency of the reactor by improving process gas flow and confinement in the heating area.
摘要翻译： 公开了一种等离子体反应器和用于干燥带状等离子体处理的用于感应等离子体源的改进气体注入的方法。 根据本公开的实施例，气体通过位于等离子体室的侧壁而不是从中心附近的气体注入通道进入等离子体室，使得处理气体以接近的方式进入等离子体室 到感应线圈。 在特定实施例中，进入腔室的工艺气体被迫通过与感应线圈相邻的反应性体积或有源区域，其中发生电子的有效加热，通过改善工艺气体流动并限制加热区域提供反应器的效率 。
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公开(公告)号：US20140197136A1
公开(公告)日：2014-07-17
申请号：US14239201
申请日：2012-07-30
IPC分类号： H01J37/32
CPC分类号： H01J37/321 , H01J37/32357 , H01J37/3244 , H05H1/46 , H05H2001/4667
摘要： A plasma reactor and method for improved gas injection for an inductive plasma source for dry strip plasma processing are disclosed. According to embodiments of the present disclosure, gas is fed into a plasma chamber through a gas injection channel located adjacent to the side wall of the plasma chamber, rather than from the center, so that the process gas enters the plasma chamber in a close proximity to the induction coil. In particular embodiments, the process gas that enters the chamber is forced to pass through a reactive volume or active region adjacent the induction coil where efficient heating of electrons occurs, providing increased efficiency of the reactor by improving process gas flow and confinement in the heating area.
摘要翻译： 公开了一种等离子体反应器和用于干燥带状等离子体处理的用于感应等离子体源的改进气体注入的方法。 根据本公开的实施例，气体通过位于等离子体室的侧壁而不是从中心附近的气体注入通道进入等离子体室，使得处理气体以接近的方式进入等离子体室 到感应线圈。 在特定实施例中，进入腔室的工艺气体被迫通过与感应线圈相邻的反应性体积或有源区域，其中发生电子的有效加热，通过改善工艺气体流动并限制加热区域提供反应器的效率 。
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公开(公告)号：US20120160806A1
公开(公告)日：2012-06-28
申请号：US13388309
申请日：2010-08-20
CPC分类号： H01J37/3211 , H01J37/321 , H01J37/32119 , H01J37/32137 , H01J37/32174 , H01J37/32183 , H01J37/32449 , H01J37/32651 , H05H1/46 , H05H2001/4652
摘要： Methods and apparatus to provide efficient and scalable RF inductive plasma processing are disclosed. In some aspects, the coupling between an inductive RF energy applicator and plasma and/or the spatial definition of power transfer from the applicator are greatly enhanced. The disclosed methods and apparatus thereby achieve high electrical efficiency, reduce parasitic capacitive coupling, and/or enhance processing uniformity. Various embodiments comprise a plasma processing apparatus having a processing chamber bounded by walls, a substrate holder disposed in the processing chamber, and an inductive RF energy applicator external to a wall of the chamber. The inductive RF energy applicator comprises one or more radiofrequency inductive coupling elements (ICEs). Each inductive coupling element has a magnetic concentrator in close proximity to a thin dielectric window on the applicator wall.
摘要翻译： 公开了提供有效和可缩放的RF感应等离子体处理的方法和装置。 在一些方面，电感RF能量施加器和等离子体之间的耦合和/或来自施加器的功率传递的空间定义大大提高。 所公开的方法和装置由此实现高电效率，减少寄生电容耦合和/或增强处理均匀性。 各种实施例包括具有由壁界定的处理室的等离子体处理装置，设置在处理室中的衬底保持器以及在室的壁外部的感应RF能量施加器。 感应RF能量施加器包括一个或多个射频感应耦合元件（ICE）。 每个电感耦合元件具有紧密靠近施加器壁上的薄介电窗口的磁集中器。
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公开(公告)号：US20080018560A1
公开(公告)日：2008-01-24
申请号：US11577279
申请日：2006-06-01
申请人： Vladimir Nagorny
发明人： Vladimir Nagorny
IPC分类号： G09G3/28
CPC分类号： G09G3/298 , G09G3/2932 , G09G2320/0228
摘要： A novel addressing technique, aimed at reduced addressing time of a PDP panel is disclosed in the present invention. The invention uses new scanning voltage waveform, new voltage waveforms for bulk sustain and data electrodes, as well as discharges in all the pixels (both ON and OFF), which allows to significantly lower the voltage controlled by address drivers. Although elements of this technique can be used in any panel and in conjunction with many other methods of shortening the address period, the effectiveness of this technique depends on the geometrical parameters of a PDP cell.
摘要翻译： 在本发明中公开了一种旨在减少PDP面板的寻址时间的新颖的寻址技术。 本发明使用新的扫描电压波形，批量维持和数据电极的新电压波形，以及所有像素（ON和OFF）中的放电，这允许显着降低由地址驱动器控制的电压。 尽管这种技术的元件可以在任何面板中使用，并且与许多缩短地址周期的其它方法相结合，但是该技术的有效性取决于PDP单元的几何参数。
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