公开(公告)号：US06648967B2

公开(公告)日：2003-11-18

申请号：US09989352

申请日：2001-11-20

申请人： Volker R. Todt ,  Rocky Oakley ,  Peter Wildes ,  Fritz Kirscht ,  Haresh Siriwardane ,  Joel Kearns

发明人： Volker R. Todt ,  Rocky Oakley ,  Peter Wildes ,  Fritz Kirscht ,  Haresh Siriwardane ,  Joel Kearns

IPC分类号： C30B3500

CPC分类号： C30B29/06 ,  C30B15/10 ,  C30B15/14 ,  Y10S117/90 ,  Y10T117/1032 ,  Y10T117/1052 ,  Y10T117/1068 ,  Y10T117/1072

摘要： A crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot comprises a quartz crucible placed in a chamber and containing a silicon melt from which a monocrystalline silicon ingot will be pulled, a graphite crucible container to support the quartz crucible by surrounding the outer circumferential surface and external base surface of crucible, and a heater provided around the outer circumferential surface of the crucible container to heat the silicon melt. This apparatus further comprises a spacer having a top surface whose area is smaller than the base area of the quartz crucible and having a melting point higher than that of silicon, is inserted between the base of the quartz crucible and the base of the crucible container while the monocrystalline silicon ingot is pulled. According to this invention, it is possible to obtain an N-type monocrystalline silicon ingot heavily doped with impurities and having a low resistivity in which the oxygen concentration is desirably controlled, or it is possible to obtain a monocrystalline silicon ingot of which the seed end retains an oxygen concentration determined by natural equilibrium conditions, while the cylindrical portion and tail end contain a relatively constant oxygen concentration, being relieved of a sharp fall in oxygen supply which is observed in a conventional apparatus.

摘要翻译： 用于牵拉和生长单晶硅锭的晶体拉制装置包括放置在腔室中的石英坩埚，并且包含将从其中拉出单晶硅锭的硅熔体，石墨坩埚容器，用于通过围绕外圆周来支撑石英坩埚 坩埚的表面和外部基面，以及设置在坩埚容器的外周表面周围的加热硅熔体的加热器。 该装置还包括具有顶表面的间隔件，该顶表面的面积小于石英坩埚的基部面积并且具有高于硅的熔点，被插入石英坩埚的基部和坩埚容器的基部之间，同时 单晶硅锭被拉。 根据本发明，可以获得重掺杂有杂质且具有低电阻率的N型单晶硅锭，其中希望控制氧浓度，或者可以获得晶种结晶的单晶硅锭 保持由自然平衡条件确定的氧气浓度，而圆柱形部分和尾端包含相对恒定的氧浓度，从而避免了在常规装置中观察到的供氧急剧下降。

公开(公告)号：US06491752B1

公开(公告)日：2002-12-10

申请号：US09354994

申请日：1999-07-16

申请人： Fritz G. Kirscht ,  Peter D. Wildes ,  Volker R. Todt ,  Nobuo Fukuto ,  Boris A. Snegirev ,  Seung-Bae Kim

发明人： Fritz G. Kirscht ,  Peter D. Wildes ,  Volker R. Todt ,  Nobuo Fukuto ,  Boris A. Snegirev ,  Seung-Bae Kim

IPC分类号： H01L21228

CPC分类号： C30B29/06 ,  C30B15/04

摘要： An enhanced n+ silicon material for epitaxial substrates and a method for producing it are described. The enhanced material leads to improved gettering characteristics of n/n+ epitaxial wafers based on these substrates. The method for preparing such n+ silicon material includes applying a co-doping of carbon to the usual n dopant in the silicon melt, before growing respective CZ crystals. This improves yield of enhanced n+ silicon material in crystal growing and ultimately leads to device yield stabilization or improvement when such n/n+ epitaxial wafers are applied in device manufacturing.

摘要翻译： 描述了用于外延衬底的增强的n +硅材料及其制造方法。 增强的材料导致基于这些衬底的n / n +外延晶片的改善的吸杂特性。 制备这种n +硅材料的方法包括在生长各自的CZ晶体之前，将碳共掺杂到硅熔体中的通常的n掺杂剂中。 这提高了晶体生长中增强的n +硅材料的产率，并且当这种n / n +外延晶片应用于器件制造时，最终导致器件产量稳定或改进。

公开(公告)号：US5549748A

公开(公告)日：1996-08-27

申请号：US372042

申请日：1995-01-12

申请人： Volker R. Todt ,  Suvankar Sengupta ,  Donglu Shi

发明人： Volker R. Todt ,  Suvankar Sengupta ,  Donglu Shi

IPC分类号： C30B11/02 ,  C30B9/00 ,  C30B29/22 ,  C30B19/04

CPC分类号： C30B29/225 ,  C30B9/00

摘要： A method of preparing single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals unmelted, allowing the wicking away of the peritectic liquid.

摘要翻译： 制备单晶的方法。 制备方法包括制备特定组合物的前体材料，加热前体材料以实现包晶液体和晶体的包晶混合物，冷却包晶混合物以直接将多孔，可润湿的惰性基底上的混合物骤冷以除去包晶液体 在多孔基底上留下单晶。 或者，可以将包晶混合物冷却至固体物质并在多孔的惰性基材上再加热以熔化包晶液体的基质，同时使晶体未熔化，从而使包晶液体吸走。

公开(公告)号：US5504060A

公开(公告)日：1996-04-02

申请号：US372067

申请日：1995-01-12

申请人： Volker R. Todt ,  Suvankar Sengupta ,  Donglu Shi

发明人： Volker R. Todt ,  Suvankar Sengupta ,  Donglu Shi

IPC分类号： C30B9/00 ,  H01L39/24 ,  H01L39/12

CPC分类号： C30B29/225 ,  C30B9/00 ,  H01L39/2419 ,  Y10S505/729

摘要： A method of preparing high temperature superconductor single crystals. The method of preparation involves preparing precursor materials of a particular composition, heating the precursor material to achieve a peritectic mixture of peritectic liquid and crystals of the high temperature superconductor, cooling the peritectic mixture to quench directly the mixture on a porous, wettable inert substrate to wick off the peritectic liquid, leaving single crystals of the high temperature superconductor on the porous substrate. Alternatively, the peritectic mixture can be cooled to a solid mass and reheated on a porous, inert substrate to melt the matrix of peritectic fluid while leaving the crystals melted, allowing the wicking away of the peritectic liquid.

摘要翻译： 制备高温超导体单晶的方法。 制备方法包括制备特定组合物的前体材料，加热前体材料以实现包晶液体和高温超导体的晶体的包晶混合物，冷却包晶混合物以直接将多孔，可湿润的惰性基底上的混合物骤冷至 将包晶液体取出，将高温超导体的单晶留在多孔基材上。 或者，可以将包晶混合物冷却至固体物质并在多孔的惰性基材上再加热以熔化包晶液体的基质，同时使晶体熔化，从而使包晶液体吸走。