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1.发明授权Crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot, and method therefor 有权用于牵拉和生长单晶硅锭的晶体拉制装置及其方法公开(公告)号：US06648967B2
公开(公告)日：2003-11-18
申请号：US09989352
申请日：2001-11-20
申请人： Volker R. Todt , Rocky Oakley , Peter Wildes , Fritz Kirscht , Haresh Siriwardane , Joel Kearns
发明人： Volker R. Todt , Rocky Oakley , Peter Wildes , Fritz Kirscht , Haresh Siriwardane , Joel Kearns
IPC分类号： C30B3500
CPC分类号： C30B29/06 , C30B15/10 , C30B15/14 , Y10S117/90 , Y10T117/1032 , Y10T117/1052 , Y10T117/1068 , Y10T117/1072
摘要： A crystal-pulling apparatus for pulling and growing a monocrystalline silicon ingot comprises a quartz crucible placed in a chamber and containing a silicon melt from which a monocrystalline silicon ingot will be pulled, a graphite crucible container to support the quartz crucible by surrounding the outer circumferential surface and external base surface of crucible, and a heater provided around the outer circumferential surface of the crucible container to heat the silicon melt. This apparatus further comprises a spacer having a top surface whose area is smaller than the base area of the quartz crucible and having a melting point higher than that of silicon, is inserted between the base of the quartz crucible and the base of the crucible container while the monocrystalline silicon ingot is pulled. According to this invention, it is possible to obtain an N-type monocrystalline silicon ingot heavily doped with impurities and having a low resistivity in which the oxygen concentration is desirably controlled, or it is possible to obtain a monocrystalline silicon ingot of which the seed end retains an oxygen concentration determined by natural equilibrium conditions, while the cylindrical portion and tail end contain a relatively constant oxygen concentration, being relieved of a sharp fall in oxygen supply which is observed in a conventional apparatus.
摘要翻译： 用于牵拉和生长单晶硅锭的晶体拉制装置包括放置在腔室中的石英坩埚，并且包含将从其中拉出单晶硅锭的硅熔体，石墨坩埚容器，用于通过围绕外圆周来支撑石英坩埚 坩埚的表面和外部基面，以及设置在坩埚容器的外周表面周围的加热硅熔体的加热器。 该装置还包括具有顶表面的间隔件，该顶表面的面积小于石英坩埚的基部面积并且具有高于硅的熔点，被插入石英坩埚的基部和坩埚容器的基部之间，同时 单晶硅锭被拉。 根据本发明，可以获得重掺杂有杂质且具有低电阻率的N型单晶硅锭，其中希望控制氧浓度，或者可以获得晶种结晶的单晶硅锭 保持由自然平衡条件确定的氧气浓度，而圆柱形部分和尾端包含相对恒定的氧浓度，从而避免了在常规装置中观察到的供氧急剧下降。
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公开(公告)号：US20130313226A1
公开(公告)日：2013-11-28
申请号：US13478292
申请日：2012-05-23
CPC分类号： C09K3/1463 , B81C2201/0104 , H01L21/30625 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition containing wet-process silica, an oxidizing agent that oxidizes nickel-phosphorous, a chelating agent, polyvinyl alcohol, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
摘要翻译： 本发明提供一种含有湿法二氧化硅，氧化镍磷的氧化剂，螯合剂，聚乙烯醇和水的化学机械抛光组合物。 本发明还提供了一种通过使基底与抛光垫和化学机械抛光组合物接触来对基底，特别是镍 - 磷基底进行化学机械抛光的方法，相对于基底移动抛光垫和抛光组合物， 并研磨基底的至少一部分以抛光基底。
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公开(公告)号：US09330703B2
公开(公告)日：2016-05-03
申请号：US12455631
申请日：2009-06-04
CPC分类号： G11B5/8404 , C09G1/02 , C09K3/1409 , C09K3/1463 , C23F1/14 , G11B23/505
摘要： The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, a complexing agent, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
摘要翻译： 本发明提供了一种化学机械抛光组合物，其包含α氧化铝，热解氧化铝，二氧化硅，氧化镍 - 磷的氧化剂，络合剂和水。 本发明还提供了一种对基材进行化学机械抛光的方法，包括使基底与抛光垫和化学机械抛光组合物相接触，使抛光垫和抛光组合物相对于基底移动，并研磨至少一部分 底物抛光底物。
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公开(公告)号：US09039914B2
公开(公告)日：2015-05-26
申请号：US13478292
申请日：2012-05-23
IPC分类号： B44C1/22 , C09K3/14 , H01L21/321 , H01L21/306
CPC分类号： C09K3/1463 , B81C2201/0104 , H01L21/30625 , H01L21/3212
摘要： The invention provides a chemical-mechanical polishing composition containing wet-process silica, an oxidizing agent that oxidizes nickel-phosphorous, a chelating agent, polyvinyl alcohol, and water. The invention also provides a method of chemically-mechanically polishing a substrate, especially a nickel-phosphorous substrate, by contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
摘要翻译： 本发明提供一种含有湿法二氧化硅，氧化镍磷的氧化剂，螯合剂，聚乙烯醇和水的化学机械抛光组合物。 本发明还提供了一种通过使基底与抛光垫和化学机械抛光组合物接触来对基底，特别是镍 - 磷基底进行化学机械抛光的方法，相对于基底移动抛光垫和抛光组合物， 并研磨基底的至少一部分以抛光基底。
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5.发明授权Polishing composition containing hybrid abrasive for nickel-phosphorous coated memory disks 有权含镍磷涂层记录盘的抛光组合物含有杂化磨料公开(公告)号：US08518135B1
公开(公告)日：2013-08-27
申请号：US13594947
申请日：2012-08-27
CPC分类号： C09K3/1409 , B24B37/044 , C09G1/02 , C09K3/1463
摘要： The invention provides a polishing composition that contains (a) an abrasive comprising (i) first alpha alumina particles that have an average aspect ratio of 0.8:1 to 1.2:1, (ii) second alpha alumina that have an average aspect ratio of greater than 1.2:1, (iii) fumed alumina particles, and (iv) wet-process silica particles, and (b) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.
摘要翻译： 本发明提供了一种抛光组合物，其包含（a）研磨剂，其包含（i）平均纵横比为0.8:1至1.2:1的第一α氧化铝颗粒，（ii）平均纵横比为更大的第二α氧化铝 超过1.2:1，（iii）热解氧化铝颗粒，和（iv）湿法二氧化硅颗粒，和（b）水。 本发明还提供了用抛光组合物抛光基底，特别是镍 - 磷基底的方法。
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公开(公告)号：US08226841B2
公开(公告)日：2012-07-24
申请号：US12364937
申请日：2009-02-03
IPC分类号： C03C15/00
CPC分类号： C09K3/1463 , C09G1/02
摘要： The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
摘要翻译： 本发明提供一种化学机械抛光组合物，其包含α氧化铝，热解氧化铝，二氧化硅，氧化镍 - 磷，草酸，任选的酒石酸，任选的非离子表面活性剂，任选的杀生物剂和水的氧化剂。 本发明还提供了一种对基材进行化学机械抛光的方法，包括使基底与抛光垫和化学机械抛光组合物相接触，使抛光垫和抛光组合物相对于基底移动，并研磨至少一部分 底物抛光底物。
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公开(公告)号：US08557137B2
公开(公告)日：2013-10-15
申请号：US13546128
申请日：2012-07-11
IPC分类号： C09K13/06
CPC分类号： C09K3/1463 , C09G1/02
摘要： The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
摘要翻译： 本发明提供一种化学机械抛光组合物，其包含α氧化铝，热解氧化铝，二氧化硅，氧化镍 - 磷，草酸，任选的酒石酸，任选的非离子表面活性剂，任选的杀生物剂和水的氧化剂。 本发明还提供了一种对基材进行化学机械抛光的方法，包括使基底与抛光垫和化学机械抛光组合物相接触，使抛光垫和抛光组合物相对于基底移动，并研磨至少一部分 底物抛光底物。
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公开(公告)号：US20100308016A1
公开(公告)日：2010-12-09
申请号：US12455631
申请日：2009-06-04
CPC分类号： G11B5/8404 , C09G1/02 , C09K3/1409 , C09K3/1463 , C23F1/14 , G11B23/505
摘要： The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, a complexing agent, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
摘要翻译： 本发明提供一种化学机械抛光组合物，其包含α氧化铝，热解氧化铝，二氧化硅，氧化镍 - 磷的氧化剂，络合剂和水。 本发明还提供了一种对基材进行化学机械抛光的方法，包括使基底与抛光垫和化学机械抛光组合物相接触，使抛光垫和抛光组合物相对于基底移动，并研磨至少一部分 底物抛光底物。
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公开(公告)号：US20100193470A1
公开(公告)日：2010-08-05
申请号：US12364937
申请日：2009-02-03
CPC分类号： C09K3/1463 , C09G1/02
摘要： The invention provides a chemical-mechanical polishing composition comprising alpha alumina, fumed alumina, silica, an oxidizing agent that oxidizes nickel-phosphorous, oxalic acid, optionally, tartaric acid, optionally, a nonionic surfactant, optionally, a biocide, and water. The invention also provides a method of chemically-mechanically polishing a substrate comprising contacting a substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.
摘要翻译： 本发明提供一种化学机械抛光组合物，其包含α氧化铝，热解氧化铝，二氧化硅，氧化镍 - 磷，草酸，任选的酒石酸，任选的非离子表面活性剂，任选的杀生物剂和水的氧化剂。 本发明还提供了一种对基材进行化学机械抛光的方法，包括使基底与抛光垫和化学机械抛光组合物相接触，使抛光垫和抛光组合物相对于基底移动，并研磨至少一部分 底物抛光底物。
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