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    STACKED PROTECTION DEVICES WITH OVERSHOOT PROTECTION AND RELATED FABRICATION METHODS
    1.
    发明申请
    STACKED PROTECTION DEVICES WITH OVERSHOOT PROTECTION AND RELATED FABRICATION METHODS 有权
    具有过热保护的堆叠式保护装置及相关制造方法

    公开(公告)号：US20160268245A1

    公开(公告)日：2016-09-15

    申请号：US14644041

    申请日：2015-03-10

    申请人： WEIZE CHEN ,  HUBERT M. BODE ,  ANDREAS LAUDENBACH ,  KURT U. NEUGEBAUER ,  PATRICE M. PARRIS

    发明人： WEIZE CHEN ,  HUBERT M. BODE ,  ANDREAS LAUDENBACH ,  KURT U. NEUGEBAUER ,  PATRICE M. PARRIS

    IPC分类号： H01L27/02 ,  H01L21/8222 ,  H01L27/06

    CPC分类号： H01L27/0248 ,  H01L21/8222 ,  H01L27/0259 ,  H01L27/067

    摘要： Protection circuits, device structures and related fabrication methods are provided. An exemplary protection circuit includes a first protection arrangement and a second protection arrangement. The first protection arrangement includes a first transistor having a first collector, a first emitter, and a first base coupled to the first emitter at a first node, and a second transistor having a second collector, a second emitter, and a second base coupled to the second emitter at a second node, the second collector being coupled to the first collector at a third node. The second protection arrangement is coupled electrically in series between the second node and a fourth node. The protection circuit further includes a first diode coupled between the third node and the fourth node.

    摘要翻译： 提供了保护电路，器件结构和相关制造方法。 示例性保护电路包括第一保护装置和第二保护装置。 第一保护装置包括具有第一集电极，第一发射极和第一基极的第一晶体管，第一晶体管和第一基极耦合到第一节点处的第一发射极，以及第二晶体管，具有第二集电极，第二发射极和第二基极， 在第二节点处的第二发射器，第二收集器在第三节点处耦合到第一收集器。 第二保护装置电连接在第二节点和第四节点之间。 保护电路还包括耦合在第三节点和第四节点之间的第一二极管。

    SEMICONDUCTOR DEVICE AND DRIVER CIRCUIT WITH AN ACTIVE DEVICE AND ISOLATION STRUCTURE INTERCONNECTED THROUGH A RESISTOR CIRCUIT, AND METHOD OF MANUFACTURE THEREOF
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND DRIVER CIRCUIT WITH AN ACTIVE DEVICE AND ISOLATION STRUCTURE INTERCONNECTED THROUGH A RESISTOR CIRCUIT, AND METHOD OF MANUFACTURE THEREOF 有权
    具有有源器件的半导体器件和驱动器电路以及通过电阻电路互连的隔离结构及其制造方法

    公开(公告)号：US20140001549A1

    公开(公告)日：2014-01-02

    申请号：US13671506

    申请日：2012-11-07

    申请人： HUBERT M. BODE ,  Weize Chen ,  Richard J. De Souza ,  Patrice M. Parris

    发明人： HUBERT M. BODE ,  Weize Chen ,  Richard J. De Souza ,  Patrice M. Parris

    IPC分类号： H01L27/04 ,  H01L21/02

    CPC分类号： H01L27/04 ,  H01L21/02381 ,  H01L21/761 ,  H01L27/0629 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/66659 ,  H01L29/66689 ,  H01L29/7817 ,  H01L29/7835

    摘要： Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within a portion of the substrate contained by the isolation structure, and a resistor circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a body region, which is separated from the isolation structure by a portion of the semiconductor substrate having the first conductivity type. The resistor circuit is connected between the isolation structure and the body region. The resistor circuit may include one or more resistor networks and, optionally, a Schottky diode and/or one or more PN diode(s) in series and/or parallel with the resistor network(s).

    摘要翻译： 半导体器件和驱动器电路的实施例包括具有第一导电类型的半导体衬底，隔离结构（包括沉陷区和掩埋层），由隔离结构包含的衬底的一部分内的有源器件，以及电阻器电路 。 掩埋层位于顶部衬底表面下方，并且具有第二导电类型。 沉降片区域在顶部衬底表面和掩埋层之间延伸，并且具有第二导电类型。 有源器件包括主体区域，其通过具有第一导电类型的半导体衬底的一部分与隔离结构分离。 电阻电路连接在隔离结构和体区之间。 电阻器电路可以包括一个或多个电阻器网络，以及可选地与电阻器网络串联和/或并联的肖特基二极管和/或一个或多个PN二极管。

    SEMICONDUCTOR DEVICE AND DRIVER CIRCUIT WITH A CURRENT CARRYING REGION AND ISOLATION STRUCTURE INTERCONNECTED THROUGH A RESISTOR CIRCUIT, AND METHOD OF MANUFACTURE THEREOF
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND DRIVER CIRCUIT WITH A CURRENT CARRYING REGION AND ISOLATION STRUCTURE INTERCONNECTED THROUGH A RESISTOR CIRCUIT, AND METHOD OF MANUFACTURE THEREOF 审中-公开
    具有通过电阻电路互连的电流携带区域和隔离结构的半导体器件和驱动电路及其制造方法

    公开(公告)号：US20140001546A1

    公开(公告)日：2014-01-02

    申请号：US13538577

    申请日：2012-06-29

    申请人： HUBERT M. BODE ,  WEIZE CHEN ,  RICHARD J. DE SOUZA ,  PATRICE M. PARRIS

    发明人： HUBERT M. BODE ,  WEIZE CHEN ,  RICHARD J. DE SOUZA ,  PATRICE M. PARRIS

    IPC分类号： H01L27/06 ,  H01L21/761

    CPC分类号： H01L27/04 ,  H01L21/02381 ,  H01L21/761 ,  H01L27/0629 ,  H01L27/092 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/0869 ,  H01L29/0878 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/66659 ,  H01L29/66689 ,  H01L29/7817 ,  H01L29/7835

    摘要： Embodiments of semiconductor devices and driver circuits include a semiconductor substrate having a first conductivity type, an isolation structure (including a sinker region and a buried layer), an active device within a portion of the substrate contained by the isolation structure, and a resistor circuit. The buried layer is positioned below the top substrate surface, and has a second conductivity type. The sinker region extends between the top substrate surface and the buried layer, and has the second conductivity type. The active device includes a current carrying region (e.g., a source region of the first conductivity type and/or a drain region of the second conductivity type), and the resistor circuit is connected between the isolation structure and the current carrying region. The resistor circuit may include one or more resistor networks and, optionally, a Schottky diode and/or one or more PN diode(s) in series and/or parallel with the resistor network(s).

    摘要翻译： 半导体器件和驱动器电路的实施例包括具有第一导电类型的半导体衬底，隔离结构（包括沉陷区和掩埋层），由隔离结构包含的衬底的一部分内的有源器件，以及电阻器电路 。 掩埋层位于顶部衬底表面下方，并且具有第二导电类型。 沉降片区域在顶部衬底表面和掩埋层之间延伸，并且具有第二导电类型。 有源器件包括电流承载区域（例如，第一导电类型的源极区域和/或第二导电类型的漏极区域），并且电阻器电路连接在隔离结构和载流区域之间。 电阻器电路可以包括一个或多个电阻器网络，以及可选地与电阻器网络串联和/或并联的肖特基二极管和/或一个或多个PN二极管。