SEMICONDUCTOR WAFER THINNED BY HORIZONTAL STEALTH LASING

    公开(公告)号:US20230411169A1

    公开(公告)日:2023-12-21

    申请号:US17841357

    申请日:2022-06-15

    IPC分类号: H01L21/463 H01L21/687

    CPC分类号: H01L21/463 H01L21/68764

    摘要: A method includes the step of thinning a semiconductor wafer by a horizontal stealth lasing process, and semiconductor wafers, dies and devices formed thereby. After formation of an integrated circuit layer on a semiconductor wafer, the wafer may be thinned by supporting an active surface of the wafer on a rotating chuck, and focusing a horizontally-oriented laser in multiple cycles at different radii within the rotating wafer. Upon completion of the multiple cycles, a portion of the wafer substrate may be removed, leaving the wafer thinned to its final thickness. Thereafter, a vertical stealth lasing process may be performed to cut individual semicondcutor dies from the thinned wafer.