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    Bidirectional semiconductor switch with improved dV/dt capability
    1.
    发明授权
    Bidirectional semiconductor switch with improved dV/dt capability 失效
    具有改善dV / dt能力的双向半导体开关

    公开(公告)号：US3872326A

    公开(公告)日：1975-03-18

    申请号：US43582074

    申请日：1974-01-23

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： KRISHNA SURINDER ,  MALMBERG PAUL R

    IPC: H03H9/145 ,  H01L29/74 ,  H01L29/747 ,  H02M1/08 ,  H03H3/08 ,  H03H9/76 ,  H03K17/16 ,  H03K17/722 ,  H03K17/725 ,  H03K17/72

    CPC classification number: H03K17/7225 ,  H03K17/16

    Abstract: A bidirectional semiconductor switch is provided with improved dV/dt capability by electrically connecting two thyristors in reverse parallel. A blocking circuit comprising at least one acoustic surface wave device is provided for electrically isolating the thyristors from each other and from a control circuit producing the control or gating signals for the thyristors. Electrical means such as ohmic leads enable the control signals outputted from the surface wave device to be separately fed to gate the thyristors. Preferably, a single acoustic surface wave device is utilized having a transmitter transducer positioned intermediate of two receiver transducers and capable of transmitting an acoustic surface wave in opposite directions through an insulator base member to the receiver transducers.

    Abstract translation: 通过反向并联电连接两个晶闸管，提供双向半导体开关，具有改进的dV / dt能力。 提供了包括至少一个声表面波器件的阻断电路，用于将晶闸管彼此之间和控制电路电隔离，产生晶闸管的控制或门控信号。 诸如欧姆引线的电气装置使得能够将从表面波装置输出的控制信号分别馈送到栅极闸门。 优选地，使用单个声表面波装置，其具有位于两个接收器换能器之间的发射器变换器，并且能够通过绝缘体基座部件向接收器换能器发送相反方向的声表面波。

    Method and apparatus for electron beam alignment with a member
    3.
    发明授权
    Method and apparatus for electron beam alignment with a member 失效
    与元件电子束对准的方法和装置

    公开(公告)号：US3895234A

    公开(公告)日：1975-07-15

    申请号：US40224873

    申请日：1973-10-01

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： O'KEEFFE TERENCE W ,  MALMBERG PAUL R

    IPC: H01L21/027 ,  H01J37/30 ,  H01J37/304 ,  H01J29/50 ,  H01J31/49

    CPC classification number: H01J37/30 ,  H01J37/3045

    Abstract: A method and apparatus are provided for alignment of an electron beam with precisely located areas of a major surface of a member. Marks of predetermined shape are formed of cathodoluminescent material and are positioned adjacent the major surface of the member which is preferably substantially transparent to the cathodoluminescense generated by the marks. An electron beam to be aligned has at least one alignment beam portion of a predetermined cross-sectional shape and preferably corresponds in size to the alignment accuracy desired. The cathodoluminescence emissions detected by a detector means are preferably positioned adjacent the opposite surface of the member. The position of the electron beam is moved relative to the member while continuing said detection until the emissions detected indicate alignment of the alignment beam portion with a corresponding mark. Preferably, said alignment method is used in producing a very accurate component pattern in an electroresist layer supported by a member utilizing either a scanning electron beam or an electron image projection system for the electron radiation beam, and most preferably in the making of a novel photocathode source, which can itself be used in the alignment of a patterned electron beam with a member.

    Abstract translation: 提供了一种方法和装置，用于使电子束与构件的主表面的精确定位的区域对准。 预定形状的标记由阴极发光材料形成，并且位于与构件的主表面相邻的位置处，该主表面优选对于由标记产生的阴极射线管基本上是透明的。 待对准的电子束具有至少一个具有预定横截面形状的对准光束部分，并且优选地对应于所需的对准精度。 由检测器装置检测到的阴极发光发射优选地位于与构件的相对表面相邻的位置。 电子束的位置相对于构件移动，同时继续所述检测，直到检测到的发射表示对准光束部分与对应标记的对准。 优选地，所述对准方法用于在由利用扫描电子束或电子辐射束的电子图像投影系统的构件支撑的电阻层中产生非常精确的构件图案，最优选地，在制造新的光电阴极 源，其本身可用于图案化电子束与构件的对准。

    Rapid exposure of micropatterns with a scanning electron microscope
    4.
    发明授权
    Rapid exposure of micropatterns with a scanning electron microscope 失效
    用扫描电子显微镜快速曝光微图案

    公开(公告)号：US3914608A

    公开(公告)日：1975-10-21

    申请号：US42639373

    申请日：1973-12-19

    Applicant: WESTINGHOUSE ELECTRIC CORP

    Inventor： MALMBERG PAUL R

    IPC: H01J37/147 ,  H01J37/28 ,  H01J37/302 ,  H01J37/305 ,  H01L21/027 ,  H01J29/00

    CPC classification number: H01J37/3023 ,  H01J37/1475

    Abstract: A micropattern is rapidly located and produced with precision on a major surface of a member with a scanning electron microscope. The major surface of the member is prepared with an electron resist layer. The electron beam of the scanning electron microscope is located at successive coordinate address positions at the major surface by address generator means and low speed deflection means for irradiation of a precision pattern in the electron resist layer by contiguous subscans. At each coordinate address, the electron beam is moved through a subpattern about the coordinate address position by a subscan generator means and high speed deflection means. Preferably, the electron beam is rapidly stabilized at each address position by generating compensating electrical signals related to transient errors from the low speed deflection means on inputting the address signals, and inputting the compensating electrical signals to the high speed deflection means.

    Abstract translation: 用扫描电子显微镜快速地定位并精确地在构件的主表面上产生微图案。 该部件的主表面用电子抗蚀剂层制备。 扫描电子显微镜的电子束通过地址发生器装置和低速偏转装置位于主表面的连续坐标地址位置，用于通过连续副扫描在电子抗蚀剂层中照射精密图案。 在每个坐标地址处，电子束通过副扫描发生器装置和高速偏转装置通过坐标地址位置的子图案移动。 优选地，通过在输入地址信号时产生与来自低速偏转装置的瞬态误差相关的补偿电信号，并将补偿电信号输入到高速偏转装置，电子束在每个地址位置处快速稳定。

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