公开(公告)号：US3639815A

公开(公告)日：1972-02-01

申请号：US3639815D

申请日：1969-09-30

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： ERNICK FREDERICK G ,  KISINKO PAUL M ,  MARINO JOSEPH ,  KANNAM PETER J

IPC: H01L23/31 ,  H01L29/00 ,  H01L29/732 ,  H01L11/06

CPC classification number: H01L29/7325 ,  H01L23/3157 ,  H01L29/00 ,  H01L2924/0002 ,  Y10S148/026 ,  Y10S148/036 ,  Y10S148/049 ,  Y10S148/051 ,  Y10S148/085 ,  Y10S148/122 ,  H01L2924/00

Abstract: A transistor having an epitaxially grown base region has the good secondary breakdown voltage performance of a single diffused transistor having a base region comprising suitably doped material having a uniform level of impurity concentration as well as all of the desirable frequency response benefits achieved by epitaxially formed transistors.

Abstract translation: 具有外延生长的基极区域的晶体管具有具有包括具有均匀杂质浓度水平的适当掺杂材料的基极区域的单个扩散晶体管的良好二次击穿电压性能以及通过外延形成的晶体管实现的所有所需的频率响应益处 。

公开(公告)号：US3519895A

公开(公告)日：1970-07-07

申请号：US3519895D

申请日：1968-02-06

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： MARINO JOSEPH ,  SCHAEFER WILLIAM R

IPC: H01L23/48 ,  H01L23/488 ,  H01L1/12 ,  H01L1/14

CPC classification number: H01L24/72 ,  H01L23/488 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033

公开(公告)号：US3507714A

公开(公告)日：1970-04-21

申请号：US3507714D

申请日：1967-08-16

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： NEW THORNDIKE C ,  KISINKO PAUL M ,  ERNICK FREDERICK G ,  MARINO JOSEPH

IPC: H01L21/18 ,  H01L21/331 ,  H01L29/00 ,  H01L29/73 ,  H01L7/44 ,  H01L7/62

CPC classification number: H01L29/00 ,  H01L21/18 ,  H01L29/73