公开(公告)号：US3867148A

公开(公告)日：1975-02-18

申请号：US43165674

申请日：1974-01-08

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： O'KEEFFE TERENCE W ,  SIMON ALAN J

IPC: H01C17/06 ,  H01L21/00 ,  H01L21/306 ,  H01L21/316 ,  H05K3/06 ,  C23F1/02 ,  G03C5/00

CPC classification number: H01L21/31683 ,  H01L21/00 ,  Y10S430/143

Abstract: A micro-miniature electronic component and particularly an electromask of high resolution is made by first applying a metal layer, of a composition, such as titanium, capable of being etched by an etchant at a relatively high rate and capable of becoming relatively etchant resistant on oxidation, over a major surface of a substrate. A desired component pattern is then defined, preferably by selective exposure with an electron beam, in a resist layer directly overlaid on the metal layer by difference in solubility between exposed and unexposed portions of the resist. The desired component pattern is then transferred to the metal layer by (i) removing less soluble portions of the resist layer to expose first portions of the metal layer, (ii) applying over said exposed first portions and the remaining portions of resist layer an oxidation masking layer of a composition such as aluminum, being relatively oxidation resistant compared to the metal layer and being relatively etchable compared to the metal layer when oxidized, (iii) removing the remaining portions of the resist layer and overlying oxidation masking layer to expose second portions of the metal layer, (iv) selectively oxidizing the second portions of the metal layer to become relatively etchant resistant while said first portions of the metal layer are masked against oxidation by the masking layer, and (v) removing the remaining portions of the oxidation masking layer and underlying unoxidized first portions of the metal layer by etching.

Abstract translation: 微型电子部件，特别是高分辨率的电子掩模是通过首先施加金属层，诸如钛的组合物，能够以较高的速率被蚀刻剂蚀刻并能够变得相对耐蚀性 氧化，在基底的主表面上。 然后，优选通过电子束的选择性曝光来限定通过抗蚀剂的曝光部分和未曝光部分之间的溶解度的差异直接覆盖在金属层上的抗蚀剂层。 然后，通过（i）除去抗蚀剂层的较少可溶部分以暴露金属层的第一部分，将所需的组分图案转移到金属层，（ii）在所述暴露的第一部分和抗蚀剂层的剩余部分上施加氧化 诸如铝的组合物的掩模层与金属层相比相对抗氧化，并且当被氧化时与金属层相比是相对可蚀刻的，（iii）去除抗蚀剂层的剩余部分并覆盖氧化掩模层以暴露第二部分 （iv）选择性地氧化金属层的第二部分以变得相对耐蚀性，同时金属层的第一部分被掩蔽层掩蔽以防止被掩蔽层氧化，和（v）去除剩余的氧化部分 掩模层和金属层的下层的未氧化的第一部分。

公开(公告)号：US3912852A

公开(公告)日：1975-10-14

申请号：US47523774

申请日：1974-05-31

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： SIMON ALAN J

IPC: H01L21/70 ,  H05K1/14 ,  H05K3/32 ,  H05K3/36 ,  H05K1/04

CPC classification number: H05K3/321 ,  H01L21/707 ,  H05K1/141 ,  H05K3/361 ,  H05K2201/0317 ,  H05K2201/10303 ,  H05K2201/10681 ,  H05K2203/1446

Abstract: An arrangement is disclosed for connecting leads to thin-film electrical circuits. An insulating sheet having conductive strips disposed thereon is placed over the thin-film circuit. A conductive bonding material extends through openings in both the insulating sheet and the conductive strips to electrically connect one end of each conductive strip to the thin-film circuit. The other end of each conductive strip extends beyond the electrical circuit for connection to another lead or a terminal pin.

公开(公告)号：US3580749A

公开(公告)日：1971-05-25

申请号：US3580749D

申请日：1968-11-13

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： SIMON ALAN J ,  JOHNSON JOSEPH E ,  O'KEEFFE TERENCE W

IPC: B26F1/26 ,  B23K15/08 ,  H01L21/00 ,  H01L21/027 ,  H01L23/29 ,  H01L7/00 ,  H01L7/44

CPC classification number: H01L21/00 ,  H01L23/291 ,  H01L2924/0002 ,  Y10S438/945 ,  H01L2924/00

Abstract: IN SELECTIVE ETCHING BY THE BOMBARDMENT ENHANCE ETCHING RATE (BEER) EFFECT, A METAL LAYER ON THE BON BARDMENT INSULATOR IS USED TO PROVIDE INCREASED ETCH EN HANCEMENT. THE METAL LAYER ALSO MAY SERVE AS AN ELEC TRODE IN BIASING THE STRUCTURE TO PRODUCE A BEAM INDUCE CURRENT FROM WHICH THE APPLIED DOSE IS INDICATED.