Abstract:
The present invention relates to dielectric coatings for electronic devices such as rectifiers, transistors and capacitors. More specifically, the invention relates to dielectric coatings comprising silicon nitride films alone or in combination with silicon dioxide films, and to methods for the production of silicon nitride coatings by reacting silane, silicon halides or halosilanes with ammonia.
Abstract:
An encapsulated solid state electronic device, such as a semiconductor, with attached metallic connection leads is made moisture resistant by coating the leads with a smooth, flexible, pinhole-free resinous barrier film, which intimately bonds to the leads and encapsulant, providing a void-free lead-encapsulated interface.
Abstract:
A method is provided for depositing thin adherent films of high purity titanium dioxide on a substrate. A gaseous mixture of a titanium tetrahalide, hydrogen and oxygen containing a molar excess of hydrogen is passed over a heated substrate surface. The substrate is heated to a temperature between 227*C. and 927*C. and preferably below 600*C. to provide a reaction between the gaseous mixture which results in the formation of an adherent titanium dioxide on the surface of the substrate.