公开(公告)号：US12230614B2

公开(公告)日：2025-02-18

申请号：US17555015

申请日：2021-12-17

Applicant: WOLFSPEED, INC.

Inventor： Marvin Marbell ,  Haedong Jang ,  Jeremy Fisher ,  Basim Noori

IPC: H01L25/16 ,  H01L23/00

Abstract: A transistor device includes a metal submount; a transistor die arranged on said metal submount; a first integrated passive device (IPD) component that includes a first substrate arranged on said metal submount; and a second integrated passive device (IPD) component that includes a second substrate arranged on the metal submount. Additionally, the first substrate is a different material from the second substrate.

公开(公告)号：US11936342B2

公开(公告)日：2024-03-19

申请号：US17313567

申请日：2021-05-06

Applicant: Wolfspeed, Inc.

Inventor： Marvin Marbell ,  Jonathan Chang ,  Haedong Jang ,  Qianli Mu ,  Michael LeFevre ,  Jeremy Fisher ,  Basim Noori

IPC: H03F1/02 ,  H01L23/498 ,  H01L23/66 ,  H03F1/56

CPC classification number: H03F1/0288 ,  H01L23/49838 ,  H01L23/66 ,  H03F1/565 ,  H01L2223/6611 ,  H01L2223/6655

Abstract: A semiconductor device package includes a plurality of input leads and an output lead, a plurality of transistor amplifier dies having inputs respectively coupled to the plurality of input leads, and a combination circuit configured to combine output signals received from the plurality of transistor amplifier dies and output a combined signal to the output lead.

公开(公告)号：US11588448B2

公开(公告)日：2023-02-21

申请号：US16910900

申请日：2020-06-24

Applicant: Wolfspeed, Inc.

Inventor： Madhu Chidurala ,  Richard Wilson ,  Haedong Jang ,  Simon Ward

IPC: H03F3/195 ,  H01L23/047 ,  H01L23/367 ,  H01L23/66 ,  H01L23/00 ,  H01L25/16 ,  H03F1/56

Abstract: A packaged radio frequency transistor amplifier includes a package housing, an RF transistor amplifier die that is mounted within the package housing, a first capacitor die that is mounted within the package housing, an input leadframe that extends through the package housing to electrically connect to a gate terminal of the RF transistor amplifier die, and an output leadframe that extends through the package housing to electrically connect to a drain terminal of the RF transistor amplifier die. The output leadframe includes an output pad region, an output lead that extends outside of the package housing, and a first arm that extends from one of the output pad region and the output lead to be adjacent the first capacitor die.

公开(公告)号：US11424333B2

公开(公告)日：2022-08-23

申请号：US16998287

申请日：2020-08-20

Applicant: Wolfspeed, Inc.

Inventor： Frank Trang ,  Zulhazmi Mokhti ,  Haedong Jang

IPC: H01L23/52 ,  H01L29/423 ,  H01L23/522 ,  H01L23/528 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/778 ,  H01L29/78

Abstract: Pursuant to some embodiments of the present invention, transistor devices are provided that include a semiconductor structure, a gate finger extending on the semiconductor structure in a first direction, and a gate interconnect extending in the first direction and configured to be coupled to a gate signal at an interior position of the gate interconnect, where the gate interconnect is connected to the gate finger at a position offset from the interior position of the gate interconnect.

公开(公告)号：US20240106397A1

公开(公告)日：2024-03-28

申请号：US17934698

申请日：2022-09-23

Applicant: Wolfspeed, Inc.

Inventor： Marvin Marbell ,  Jeremy Fisher ,  Haedong Jang ,  Daniel Namishia ,  Daniel Etter

IPC: H03F3/195 ,  H01L23/66 ,  H03F1/56 ,  H03F3/24

CPC classification number: H03F3/195 ,  H01L23/66 ,  H03F1/565 ,  H03F3/245 ,  H01L2223/6611 ,  H01L2223/6655 ,  H03F2200/451

Abstract: A transistor amplifier package includes a package substrate comprising conductive patterns exposed by solder mask patterns at a surface thereof, and at least one transistor die comprising a semiconductor structure attached to the surface of the package substrate by a solder material and aligned by the solder mask patterns such that respective gate, drain, and/or source terminals of the at least one transistor die are electrically connected to respective ones of the conductive patterns. Related transistor amplifiers and fabrication methods are also discussed.

公开(公告)号：US11742304B2

公开(公告)日：2023-08-29

申请号：US17379420

申请日：2021-07-19

Applicant: Wolfspeed, Inc.

Inventor： Frank Trang ,  Qianli Mu ,  Haedong Jang ,  Zulhazmi Mokhti

IPC: H01L23/66 ,  H01L23/00 ,  H01L29/423 ,  H01L23/482

CPC classification number: H01L23/66 ,  H01L23/4824 ,  H01L24/09 ,  H01L24/49 ,  H01L29/42356 ,  H01L2223/6611

Abstract: A multi-cell transistor includes a semiconductor structure, a plurality of unit cell transistors that are electrically connected in parallel, each unit cell transistor extending in a first direction in the semiconductor structure, wherein the unit cell transistors are spaced apart from each other along a second direction, and an isolation structure that is positioned between a first group of the unit cell transistors and a second group of the unit cell transistors and that extends above the semiconductor structure.

公开(公告)号：US11757013B2

公开(公告)日：2023-09-12

申请号：US17834395

申请日：2022-06-07

Applicant: Wolfspeed, Inc.

Inventor： Frank Trang ,  Zulhazmi Mokhti ,  Haedong Jang

IPC: H01L23/52 ,  H01L29/423 ,  H01L23/522 ,  H01L23/528 ,  H01L29/06 ,  H01L29/08 ,  H01L29/417 ,  H01L29/778 ,  H01L29/78

CPC classification number: H01L29/42316 ,  H01L23/528 ,  H01L23/5226 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/41758 ,  H01L29/778 ,  H01L29/7816

Abstract: Pursuant to some embodiments of the present invention, transistor devices are provided that include a semiconductor structure, a drain finger extending on the semiconductor structure in a first direction, and a drain interconnect extending in the first direction and configured to be coupled to a drain signal at an interior position of the drain interconnect, where the drain interconnect is connected to the drain finger at a position offset from the interior position of the drain interconnect.

公开(公告)号：US11417617B2

公开(公告)日：2022-08-16

申请号：US17010479

申请日：2020-09-02

Applicant: Wolfspeed, Inc.

Inventor： Frank Trang ,  Haedong Jang ,  Zulhazmi Mokhti

IPC: H01L23/66 ,  H01L21/56 ,  H01L23/31 ,  H01L23/552 ,  H01L23/00 ,  H03H7/38

Abstract: Packaged transistor devices are provided that include a transistor on a base of the packaged transistor device, the transistor comprising a control terminal and an output terminal, a first bond wire electrically coupled between an input lead and the control terminal of the transistor, a second bond wire electrically coupled between an output lead and the output terminal of the transistor, and an isolation material that is and physically between the first bond wire and the second bond wire, wherein the isolation material is configured to reduce a coupling between the first bond wire and the second bond wire.

公开(公告)号：US20240194413A1

公开(公告)日：2024-06-13

申请号：US18078779

申请日：2022-12-09

Applicant: Wolfspeed, Inc.

Inventor： Jeremy Fisher ,  Marvin Marbell ,  Haedong Jang

IPC: H01G4/40 ,  H01F27/28 ,  H01F27/29 ,  H01G4/228 ,  H01G4/33 ,  H01G4/38 ,  H01L25/16

CPC classification number: H01G4/40 ,  H01F27/2804 ,  H01F27/292 ,  H01G4/228 ,  H01G4/33 ,  H01G4/38 ,  H01L25/16 ,  H01L28/10 ,  H01L28/60 ,  H01L24/48 ,  H01L2924/1423 ,  H01L2924/19011 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105

Abstract: A device according to some embodiments includes a first IPD die including a first SiC substrate. The first IPD die has a first surface and a second surface on the first SiC substrate opposite the first surface and includes a first contact and at least one first metal portion on the respective surfaces of the first SiC substrate. The device further includes a second IPD die including a second SiC substrate. The second IPD die has a third surface and a fourth surface on the second SiC substrate opposite the third surface and includes a second contact and at least one second metal portion on the respective surfaces of the second SiC substrate. The device further includes an electrical interconnection structure between one of the first and second surfaces of the first IPD die and one of the third and fourth surfaces of the second IPD die.

公开(公告)号：US11522504B2

公开(公告)日：2022-12-06

申请号：US16913374

申请日：2020-06-26

Applicant: Wolfspeed, Inc.

Inventor： Haedong Jang ,  Madhu Chidurala ,  Richard Wilson

IPC: H03F3/19 ,  H03F3/24 ,  H03L7/099

Abstract: Inductance-capacitance (LC) resonators having different resonant frequencies, and radio frequency (RF) transistor amplifiers including the same. One usage of such LC resonators is to implement RF short/DC block circuits. A RF transistor amplifier may include a transistor on a base of the RF transistor amplifier coupled to an input and an output of the RF transistor amplifier; a first inductance-capacitance (LC) resonator comprising a first inductance and a first capacitance; and a second LC resonator comprising a second inductance and a second capacitance. The first LC resonator may be configured to resonate at a first frequency, and the second LC resonator may be configured to resonate at a second frequency different from the first frequency.