公开(公告)号：US12125806B2

公开(公告)日：2024-10-22

申请号：US18219422

申请日：2023-07-07

Applicant: Wolfspeed, Inc.

Inventor： Arthur Pun ,  Basim Noori

IPC: H01L23/31 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/047 ,  H01L23/29 ,  H01L23/495 ,  H01L23/66

CPC classification number: H01L23/564 ,  H01L21/4817 ,  H01L21/4825 ,  H01L21/565 ,  H01L23/047 ,  H01L23/293 ,  H01L23/296 ,  H01L23/3114 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/66 ,  H01L2223/6683

Abstract: A method of packaging an RF transistor device includes attaching one or more electronic devices to a carrier substrate, applying an encapsulant over at least one of the one or more electronic devices, and providing a protective structure on the carrier substrate over the one or more electronic devices. A packaged RF transistor device includes a carrier substrate, one or more electronic devices attached to the carrier substrate, an encapsulant material over at least one of the one or more electronic devices and extending onto the carrier substrate, and a protective structure on the carrier substrate over the one or more electronic devices and the encapsulant material.

公开(公告)号：US11881464B2

公开(公告)日：2024-01-23

申请号：US17210674

申请日：2021-03-24

Applicant: Wolfspeed, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Kwangmo Chris Lim ,  Qianli Mu

IPC: H01L23/66 ,  H01L23/538 ,  H01L25/065 ,  H01L29/16 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213

CPC classification number: H01L23/66 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/0657 ,  H01L29/1608 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213 ,  H01L2223/6611 ,  H01L2223/6655

Abstract: A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.

公开(公告)号：US11533024B2

公开(公告)日：2022-12-20

申请号：US16911757

申请日：2020-06-25

Applicant: Wolfspeed, Inc.

Inventor： Kwangmo Chris Lim ,  Basim Noori ,  Qianli Mu ,  Marvin Marbell ,  Scott Sheppard ,  Alexander Komposch

IPC: H01L23/047 ,  H03F3/19 ,  H01L23/367 ,  H01L23/66 ,  H01L23/00 ,  H01L25/16 ,  H03F1/02 ,  H03F1/56

Abstract: RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

公开(公告)号：US11356070B2

公开(公告)日：2022-06-07

申请号：US16888957

申请日：2020-06-01

Applicant: Wolfspeed, Inc.

Inventor： Kwangmo Chris Lim ,  Basim Noori ,  Qianli Mu ,  Marvin Marbell ,  Scott Sheppard ,  Alexander Komposch

IPC: H03F3/72 ,  H01Q1/52 ,  H03F1/56 ,  H03F3/19 ,  H03F3/21 ,  H03H2/00

Abstract: RF transistor amplifiers include an RF transistor amplifier die having a semiconductor layer structure, a coupling element on an upper surface of the semiconductor layer structure, and an interconnect structure on an upper surface of the coupling element so that the RF transistor amplifier die and the interconnect structure are in a stacked arrangement. The coupling element includes a first shielded transmission line structure.

公开(公告)号：US12230614B2

公开(公告)日：2025-02-18

申请号：US17555015

申请日：2021-12-17

Applicant: WOLFSPEED, INC.

Inventor： Marvin Marbell ,  Haedong Jang ,  Jeremy Fisher ,  Basim Noori

IPC: H01L25/16 ,  H01L23/00

Abstract: A transistor device includes a metal submount; a transistor die arranged on said metal submount; a first integrated passive device (IPD) component that includes a first substrate arranged on said metal submount; and a second integrated passive device (IPD) component that includes a second substrate arranged on the metal submount. Additionally, the first substrate is a different material from the second substrate.

公开(公告)号：US11936342B2

公开(公告)日：2024-03-19

申请号：US17313567

申请日：2021-05-06

Applicant: Wolfspeed, Inc.

Inventor： Marvin Marbell ,  Jonathan Chang ,  Haedong Jang ,  Qianli Mu ,  Michael LeFevre ,  Jeremy Fisher ,  Basim Noori

IPC: H03F1/02 ,  H01L23/498 ,  H01L23/66 ,  H03F1/56

CPC classification number: H03F1/0288 ,  H01L23/49838 ,  H01L23/66 ,  H03F1/565 ,  H01L2223/6611 ,  H01L2223/6655

Abstract: A semiconductor device package includes a plurality of input leads and an output lead, a plurality of transistor amplifier dies having inputs respectively coupled to the plurality of input leads, and a combination circuit configured to combine output signals received from the plurality of transistor amplifier dies and output a combined signal to the output lead.

公开(公告)号：US20240088838A1

公开(公告)日：2024-03-14

申请号：US18517065

申请日：2023-11-22

Applicant: Wolfspeed, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Qianli Mu ,  Kwangmo Chris Lim ,  Michael E. Watts ,  Mario Bokatius ,  Jangheon Kim

IPC: H03F1/56 ,  H01L23/00 ,  H01L23/48 ,  H01L23/498 ,  H01L29/778 ,  H03F3/193

CPC classification number: H03F1/565 ,  H01L23/481 ,  H01L23/49822 ,  H01L24/08 ,  H01L29/778 ,  H03F3/193 ,  H01L2224/08225 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451

Abstract: RF transistor amplifiers include a Group III nitride-based RF transistor amplifier die that includes a semiconductor layer structure, a conductive source via that is connected to a source region of the Group III nitride-based RF transistor amplifier die, the conductive source via extending through the semiconductor layer structure, and an additional conductive via that extends through the semiconductor layer structure. A first end of the additional conductive via is connected to a first external circuit and a second end of the additional conductive via that is opposite the first end is connected to a first matching circuit.

公开(公告)号：US20230075505A1

公开(公告)日：2023-03-09

申请号：US17466783

申请日：2021-09-03

Applicant: Wolfspeed, Inc.

Inventor： Fabian Radulescu ,  Basim Noori ,  Scott Sheppard ,  Kwangmo Chris Lim

IPC: H01L23/00 ,  H01L29/417 ,  H01L29/423 ,  H01L23/48

Abstract: A radio frequency (“RF”) transistor amplifier die includes a semiconductor layer structure having a plurality of transistor cells, and an insulating layer on a surface of the semiconductor layer structure. Conductive pillar structures protrude from the insulating layer opposite the surface of the semiconductor layer structure, and are configured to provide input signal, output signal, or ground connections to the transistor cells. The ground connections are arranged between the input and/or output signal connections to the transistor cells. Related devices and packages are also discussed.

公开(公告)号：US20240266348A1

公开(公告)日：2024-08-08

申请号：US18105586

申请日：2023-02-03

Applicant: Wolfspeed, Inc.

Inventor： Fabian Radulescu ,  Basim Noori ,  Scott Sheppard ,  Qianli Mu ,  Jeremy Fisher ,  Dan Namishia

IPC: H01L27/085 ,  H01L23/00 ,  H01L23/528

CPC classification number: H01L27/085 ,  H01L23/528 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L2224/0603 ,  H01L2224/0615 ,  H01L2224/13014 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/14051 ,  H01L2224/1415 ,  H01L2224/16227

Abstract: A transistor device includes a substrate and a plurality of transistor unit cells arranged in parallel on the substrate. Each of the transistor unit cells includes a source contact, a drain contact, and a gate finger between the source contact and the drain contact. The gate finger extends in a first direction and has a first end and a second end. The transistor device further includes a first solder bump on the transistor device that is within a periphery of the active region of the device and is electrically connected to the gate finger of a first one of the unit cells at a feed point that is between the first end and the second end of the gate finger.

公开(公告)号：US20240071962A1

公开(公告)日：2024-02-29

申请号：US18502334

申请日：2023-11-06

Applicant: Wolfspeed, Inc.

Inventor： Basim Noori ,  Marvin Marbell ,  Kwangmo Chris Lim ,  Qianli Mu

IPC: H01L23/66 ,  H01L23/538 ,  H01L25/065 ,  H01L29/16 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213

CPC classification number: H01L23/66 ,  H01L23/5384 ,  H01L23/5386 ,  H01L25/0657 ,  H01L29/1608 ,  H03F3/193 ,  H03F3/195 ,  H03F3/213 ,  H01L2223/6611 ,  H01L2223/6655

Abstract: A radio frequency (RF) power amplifier device package includes a substrate and a first die attached to the substrate at a bottom surface of the first die. The first die includes top gate or drain contacts on a top surface of the first die opposite the bottom surface. At least one of the top gate or drain contacts is electrically connected to a respective bottom gate or drain contact on the bottom surface of the first die by a respective conductive via structure. An integrated interconnect structure, which is on the first die opposite the substrate, includes a first contact pad on the top gate contact or the top drain contact of the first die, and at least one second contact pad connected to a package lead, a contact of a second die, impedance matching circuitry, and/or harmonic termination circuitry.